Abstract: A semiconductor structure includes a metal gate structure including a gate dielectric layer and a gate electrode, a conductive layer disposed on the gate electrode, and a gate contact disposed on the conductive layer. The conductive layer extends from a position below a top surface of the metal gate structure to a position above the top surface of the metal gate structure. The gate electrode includes at least a first metal, and the conductive layer includes at least the first metal and a second metal different from the first metal. Laterally the conductive layer is fully between opposing sidewalls of the metal gate structure.

Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

Abstract: A semiconductor device including a magnetic tunneling junction (MTJ) and a hard mask on a substrate, a first inter-metal dielectric (IMD) layer around the MTJ, a first metal interconnection adjacent to the MTJ, a first barrier layer and a channel layer on the first IMD layer to directly contact the hard mask and electrically connect the MTJ and the first metal interconnection, and a stop layer around the channel layer.

Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.

Abstract: A polymer plastic front plate comprises: a plastic substrate and a hard coating layer formed on an adhesion surface of the plastic substrate. The hard coating layer comprises: organic-inorganic hybrid UV oligomer, high Tg UV resin additive, a plurality of dispersed flaky nano inorganic material, and photo initiator, so as to form a gas barrier hard coating layer with high surface dyne value (>44 dyne) on the adhesion surface of the plastic substrate. It not only has good ink printability and OCA adhesiveness, but also inhibits the diffusion of fugitive gas from polymer plastic front plates during high-temperature, high-temperature and high-humidity, high-low temperature thermal shocks and other harsh automotive industry environmental tests. The gas can be avoided from entering the OCA layer, thereby solving the problems of bubbles and delamination after the environmental tests are performed.

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a cap layer adjacent to the MTJ and extended to overlap a top surface of the MTJ, a top electrode on the MTJ, a metal interconnection under the MTJ, a first inter-metal dielectric (IMD) layer around the MTJ, and a second IMD layer around the metal interconnection. Preferably, the cap layer is adjacent to the top electrode and the MTJ and on the second IMD layer and a top surface of the cap layer is higher than a top surface of the first IMD layer.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first inter-metal dielectric (IMD) layer around the MTJ; forming a first metal interconnection adjacent to the MTJ; forming a stop layer on the first IMD layer; removing the stop layer to form an opening; and forming a channel layer in the opening to electrically connect the MTJ and the first metal interconnection.

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

Abstract: An aerial vehicle including a body, a first ranging device, a second ranging device and a controller is provided. The first ranging device is disposed on the body and is configured to detect a first distance between the first ranging device and the reflector. The second ranging device is disposed on the body and is configured to detect a second distance between the second ranging device and the reflector. The controller is configured to obtain an included angle between a direction of the body and the reflector according to the first distance and the second distance.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a gate disposed on the semiconductor substrate. The semiconductor device structure also includes a source doped region and a drain doped region on two opposite sides of the gate. The semiconductor device structure further includes a source protective circuit and a drain protective circuit. From a side perspective view, a first drain conductive element of the source protective circuit partially overlaps a first source conductive element of the drain protective circuit.

Abstract: An energy storage device and a temperature control method thereof are provided. When a temperature of a battery is lower than a preset temperature and an alternating current-direct current conversion circuit receives an alternating current input voltage, an inductance-capacitance resonance circuit and a direct current-direct current conversion circuit are controlled to use electrical energy provided by the alternating current-direct current conversion circuit to generate a resonant current to heat the battery. When the temperature of the battery is lower than the preset temperature and the alternating current-direct current conversion circuit does not receive the alternating current input voltage, the inductance-capacitance resonance circuit and the direct current-direct current conversion circuit are controlled to use electrical energy provided by the battery to generate a resonant current to heat the battery.

Abstract: An electronic device is provided. The electronic device includes a light-emitting element, a cover plate and a light-shielding layer. The cover plate is disposed on the light-emitting element. The light-shielding layer is disposed on a side of the cover plate adjacent to the light-emitting element. The light-shielding layer has an icon area, and the light-shielding layer has a plurality of openings in the icon area. In addition, the plurality of openings have an aperture ratio in the icon area, and the aperture ratio is greater than 0% and less than or equal to 20%.

Abstract: A UAV including a first barometer and a processing unit is provided. The first barometer provides a first air pressure value. The processing unit is coupled to the first barometer for receiving the first air pressure value from the first barometer, performing timing-synchronization on the first air pressure value provided by the first barometer and an external reference air pressure value provided by an external reference barometer to obtain a timing-synchronized first air pressure value and recalculating the timing-synchronized first air pressure value to generate a compensated air pressure value, wherein the processing unit performs data fusion calculation on the first air pressure value, the compensated air pressure value and a sensor data to obtain a target fused data and real-timely controls the altitude and the posture of the UAV according to the target fused data.

Abstract: A method and a system for vehicle head direction compensation are disclosed. The method includes the following. A relative position between each of a plurality of sensors disposed on a vehicle and a plurality of base stations is obtained through the sensors and a relative coordinate system is established by a processor to obtain a vehicle head direction of the vehicle in the relative coordinate system and a deviation angle between an X-axis of the relative coordinate system and a true north azimuth. An angle compensation is performed by the processor on the vehicle head direction of the vehicle in the relative coordinate system based on the deviation angle.

Abstract: An energy storage device and a method thereof for supplying power are provided. Control a power conversion circuit to lower an AC output voltage during a preset period to a preset voltage, control the power conversion circuit to change from outputting the preset voltage to outputting a surge voltage, so that the power conversion circuit enters a surge generation period, and determine whether to turn off the energy storage device according to whether an output terminal of the power conversion circuit generating a surge current during the surge generation period.

Abstract: An energy storage device and a method thereof are provided. The power transfer circuit transfers a DC voltage provided by a battery module into an AC output voltage to provide the AC output voltage to an output end of the power transfer circuit for providing power to a load. When the AC output voltage is at a default phase, the power transfer circuit is disabled in a default period, and whether the energy storage device may be shut down is determined according to a voltage difference of the AC output voltage sensed by a sensing circuit during the default period.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a gate disposed on the semiconductor substrate. The semiconductor device structure also includes a source doped region and a drain doped region on two opposite sides of the gate. The semiconductor device structure further includes a source protective circuit and a drain protective circuit. From a side perspective view, a first drain conductive element of the source protective circuit partially overlaps a first source conductive element of the drain protective circuit.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a gate disposed on the semiconductor substrate. The semiconductor device structure also includes a source doped region and a drain doped region on two opposite sides of the gate. The semiconductor device structure further includes a source protective circuit and a drain protective circuit. From a side perspective view, a first drain conductive element of the source protective circuit partially overlaps a first source conductive element of the drain protective circuit.

Abstract: A lens module of enhanced stability and strength when mounted to an image-capturing device includes a voice coil motor. The voice coil motor includes a casing and a first connection plate connected to the casing. The first connection plate defines at least one first mounting hole. An electronic device using the lens module is also provided.