Patents by Inventor Yu-Lin Chu
Yu-Lin Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250088782Abstract: A cushion for a wearable device includes an outer cover layer and an inner cushion. The outer cover layer includes a first base material, a heat conducting material and a first heat storage material. The heat conducting material and the first heat storage material are dispersed in the first base material. The enthalpy value of the outer cover layer is less than or equal to 5 J/g. The inner cushion includes a second base material and a second heat storage material. The second heat storage material is dispersed in the second base material. The enthalpy value of the inner cushion is greater than that of the outer cover layer. The difference between the enthalpy value of the inner cushion and the enthalpy value of the outer cover layer is greater than 45 J/g.Type: ApplicationFiled: September 7, 2023Publication date: March 13, 2025Applicant: Merry Electronics(Shenzhen) Co., Ltd.Inventors: Ying Chen Cheng, Yu Lin Chu, Cheng Yu Tsai, Hsin-Chu Lin
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Publication number: 20240387298Abstract: A method of detecting or monitoring process electrical charge produced during fabrication of an integrated circuit (IC) on a semiconductor wafer includes fabricating a process charge detection circuit on or in the semiconductor wafer, including: a victim isolation well, a gate oxide disposed on or in the victim isolation well, an aggressor isolation well electrically connected with the victim isolation well via the gate oxide, a victim antenna electrically connected with the victim isolation well and together with the victim isolation well defining a victim RC time constant, and an aggressor antenna electrically connected with the aggressor isolation well and together with the aggressor isolation well defining an aggressor RC time constant that is different from the victim RC time constant. Process charge is detected using the process charge detection circuit. The detecting comprises measuring an electrical parameter of the gate oxide.Type: ApplicationFiled: July 30, 2024Publication date: November 21, 2024Inventors: Hsi-Yu Kuo, Yu-Lin Chu
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Publication number: 20240239986Abstract: A copolyester is formed by copolymerizing a depolymerized polyester and succinic acid. The depolymerized polyester includes depolymerized polyethylene terephthalate (PET), and the depolymerized PET is formed by depolymerizing PET with ethylene glycol. The repeating unit of PET and the succinic acid have a molar ratio of 40:60 to 50:50. The repeating unit of PET and the ethylene glycol have a molar ratio of 100:100 to 100:500. The copolyester has a storage modulus of 1*104 Pa to 1*106 Pa at 80° C. The copolyester can be used in a hot melt adhesive.Type: ApplicationFiled: January 17, 2024Publication date: July 18, 2024Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Che-Tseng LIN, Meng-Hsin CHEN, Jen-Chun CHIU, Kai-Chuan KUO, Yu-Lin CHU, Po-Hsien HO, Ke-Hsuan LUO, Chih-Hsiang LIN, Hui-Ching HSU
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Publication number: 20240150656Abstract: A liquid crystal polymer, composition, liquid crystal polymer film, laminated material and method of forming liquid crystal polymer film are provided. The liquid crystal polymer includes a first repeating unit, a second repeating unit, a third repeating unit, a fourth repeating unit, and a fifth repeating unit. The first repeating unit has a structure of Formula (I), the second repeating unit has a structure of Formula (II), the third repeating unit has a structure of Formula (III), the fourth repeating unit has a structure of Formula (IV), and the fifth repeating unit has a structure of Formula (V), a structure of Formula (VI), or a structure of Formula (VII) wherein A1, A2, A3, A4, X1, Z1, R1, R2, R3 and Q are as defined in the specification.Type: ApplicationFiled: September 22, 2023Publication date: May 9, 2024Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yu-Lin CHU, Jen-Chun CHIU, Po-Hsien HO, Yu-Min HAN, Meng-Hsin CHEN, Chih-Hsiang LIN
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Publication number: 20240124706Abstract: A liquid crystal polymer, composition, liquid crystal polymer film, laminated material and method of forming liquid crystal polymer film are provided. The liquid crystal polymer includes a first repeating unit, a second repeating unit, a third repeating unit, and a fourth repeating unit. The first repeating unit has a structure of Formula (I), the second repeating unit has a structure of Formula (II), the third repeating unit has a structure of Formula (III), and the fourth repeating unit has a structure of Formula (IV), a structure of Formula (V) or a structure of Formula (VI) wherein A1, A2, A3, Z1, R1, R2, R3 and Q are as defined in the specification.Type: ApplicationFiled: September 22, 2023Publication date: April 18, 2024Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yu-Lin CHU, Jen-Chun CHIU, Po- Hsien HO, Yu-Min HAN, Meng-Hsin CHEN, Chih-Hsiang LIN
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Patent number: 11866632Abstract: Liquid-crystal polymer is composed of the following repeating units: 10 mol % to 35 mol % of 10 mol % to 35 mol % of 10 mol % to 50 mol % of and 10 mol % to 40 mol % of 10 mol % to 40 mol % of or a combination thereof. Each of AR1, AR2, AR3, and AR4 is independently AR5 or AR5-Z-AR6, in which each of AR5 and AR6 is independently or a combination thereof, and Z is —O—, or C1-5 alkylene group. Each of X and Y is independently H, C1-5 alkyl group, CF3, or wherein R2 is H, CH3, CH(CH3)2, C(CH3)3, CF3, or n=1 to 4; and wherein R1 is C1-5 alkylene group.Type: GrantFiled: July 1, 2020Date of Patent: January 9, 2024Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yu-Lin Chu, Jen-Chun Chiu, Zu-Chiang Gu, Po-Hsien Ho, Meng-Hsin Chen, Chih-Hsiang Lin
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Publication number: 20230378162Abstract: In an integrated circuit (IC) fabrication process, devices or sub-circuits are fabricated in respective first and second electrical isolation regions. A back-to-back (B2B) diodes sub-circuit is fabricated in a third electrical isolation region, which includes a first diode whose cathode is connected with a first terminal and whose anode is connected with a second terminal, and a second diode whose anode is connected with the first terminal and whose cathode is connected with the second terminal. Electrostatic discharge protection is provided to the first and second electrical isolation regions by electrically connecting the first terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the first device or sub-circuit and the second terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the second device or sub-circuit. Thereafter, the first device or sub-circuit and the second device or sub-circuit are electrically connected.Type: ApplicationFiled: July 31, 2023Publication date: November 23, 2023Applicant: Taiwan Semiconductor Manufacturing Company LTDInventors: Hsi-Yu Kuo, Tsung-Yuan Chen, Yu-Lin Chu, Chih-Wei Hsu
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Patent number: 11764206Abstract: In an integrated circuit (IC) fabrication process, devices or sub-circuits are fabricated in respective first and second electrical isolation regions. A back-to-back (B2B) diodes sub-circuit is fabricated in a third electrical isolation region, which includes a first diode whose cathode is connected with a first terminal and whose anode is connected with a second terminal, and a second diode whose anode is connected with the first terminal and whose cathode is connected with the second terminal. Electrostatic discharge protection is provided to the first and second electrical isolation regions by electrically connecting the first terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the first device or sub-circuit and the second terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the second device or sub-circuit. Thereafter, the first device or sub-circuit and the second device or sub-circuit are electrically connected.Type: GrantFiled: January 24, 2022Date of Patent: September 19, 2023Assignee: Taiwan Semiconductor Manufacturing Company, LTD.Inventors: Hsi-Yu Kuo, Yu-Lin Chu, Tsung-Yuan Chen, Chih-Wei Hsu
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Publication number: 20230154918Abstract: In an integrated circuit (IC) fabrication process, devices or sub-circuits are fabricated in respective first and second electrical isolation regions. A back-to-back (B2B) diodes sub-circuit is fabricated in a third electrical isolation region, which includes a first diode whose cathode is connected with a first terminal and whose anode is connected with a second terminal, and a second diode whose anode is connected with the first terminal and whose cathode is connected with the second terminal. Electrostatic discharge protection is provided to the first and second electrical isolation regions by electrically connecting the first terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the first device or sub-circuit and the second terminal of the B2B diodes sub-circuit with a VSS power supply terminal of the second device or sub-circuit. Thereafter, the first device or sub-circuit and the second device or sub-circuit are electrically connected.Type: ApplicationFiled: January 24, 2022Publication date: May 18, 2023Inventors: Hsi-Yu Kuo, Yu-Lin Chu, Tsung-Yuan Chen, Chih-Wei Hsu
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Patent number: 11572438Abstract: A liquid-crystal polymer includes at least one repeating unit having a spiro structure, and the repeating unit occupies 1 mol % to 20 mol % of the liquid-crystal polymer. The liquid-crystal polymer is composed of the following repeating units: 1 mol % to 20 mol % of 10 mol % to 35 mol % of 10 mol % to 35 mol % of 10 mol % to 50 mol % of and 10 mol % to 40 mol % of AR1 is wherein each of ring R and ring S is independently a C3-20 ring, ring R and ring S share a carbon atom, and each of K1 and K2 is independently a C5-20 conjugated system. Each of AR2, AR3, AR4, and AR5 is independently AR6 or AR6—Z—AR7.Type: GrantFiled: July 1, 2020Date of Patent: February 7, 2023Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yu-Lin Chu, Jen-Chun Chiu, Zu-Chiang Gu, Po-Hsien Ho, Meng-Hsin Chen, Chih-Hsiang Lin
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Publication number: 20220415717Abstract: A method of detecting or monitoring process electrical charge produced during fabrication of an integrated circuit (IC) on a semiconductor wafer includes fabricating a process charge detection circuit on or in the semiconductor wafer, including: a victim isolation well, a gate oxide disposed on or in the victim isolation well, an aggressor isolation well electrically connected with the victim isolation well via the gate oxide, a victim antenna electrically connected with the victim isolation well and together with the victim isolation well defining a victim RC time constant, and an aggressor antenna electrically connected with the aggressor isolation well and together with the aggressor isolation well defining an aggressor RC time constant that is different from the victim RC time constant. Process charge is detected using the process charge detection circuit. The detecting comprises measuring an electrical parameter of the gate oxide.Type: ApplicationFiled: February 14, 2022Publication date: December 29, 2022Inventors: Hsi-Yu Kuo, Yu-Lin Chu
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Patent number: 11450657Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a first well, a second well and doped regions. The substrate has heavily doped and lightly doped regions over the heavily doped region. The first wells are disposed in the lightly doped region and arranged as an array. The first wells have a conductive type opposite to a conductive type of the heavily doped and lightly doped regions. The second well is disposed in the substrate over the lightly doped region, and has an active region defined by an isolation structure. The first wells are overlapped with the second well. Top ends of the first wells are lower than a bottom end of the second well. The doped regions are separately located in the active region, and have a conductive type opposite to a conductive type of the second well.Type: GrantFiled: June 12, 2020Date of Patent: September 20, 2022Assignee: Taiwan Semiconductor Manufacturing Company Ltd.Inventors: Hsi-Yu Kuo, Yu-Lin Chu
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Patent number: 10980399Abstract: A medical instrument includes an instrument body and an operating mechanism. The instrument body has a window portion having a light permeable segment. The operating mechanism includes an indicator unit and an operating unit. The indicator unit is disposed in the window portion, and is changeable between a detectable state where the indicator unit is detectable through the light permeable segment of the window portion and a non-detectable state where the indicator unit is non-detectable through the light permeable segment. The operating unit is connected to the indicator unit and operable to change the indicator unit between the detectable and non-detectable states. An endoscopy system including the medical instrument is also disclosed.Type: GrantFiled: November 21, 2017Date of Patent: April 20, 2021Assignee: HIWIN TECHNOLOGIESCORP.Inventors: Wei-Lun Lin, Zong-Sian Jiang, Hung-Chuan Hsu, Yu-Lin Chu
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Publication number: 20210002554Abstract: Liquid-crystal polymer is composed of the following repeating units: 10 mol % to 35 mol % of 10 mol % to 35 mol % of 10 mol % to 50 mol % of and 10 mol % to 40 mol % of 10 mol % to 40 mol % of or a combination thereof. Each of AR1, AR2, AR3, and AR4 is independently AR5 or AR5-Z-AR6, in which each of AR5 and AR6 is independently or a combination thereof, and Z is —O—, or C1-5 alkylene group. Each of X and Y is independently H, C1-5 alkyl group, CF3, or wherein R2 is H, CH3, CH(CH3)2, C(CH3)3, CF3, or n=1 to 4 ; and wherein R1 is C1-5 alkylene group.Type: ApplicationFiled: July 1, 2020Publication date: January 7, 2021Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yu-Lin CHU, Jen-Chun CHIU, Zu-Chiang GU, Po-Hsien HO, Meng-Hsin CHEN, Chih-Hsiang LIN
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Publication number: 20210002555Abstract: A liquid-crystal polymer includes at least one repeating unit having a spiro structure, and the repeating unit occupies 1 mol % to 20 mol % of the liquid-crystal polymer. The liquid-crystal polymer is composed of the following repeating units: 1 mol % to 20 mol % of 10 mol % to 35 mol % of 10 mol % to 35 mol % of 10 mol % to 50 mol % of and 10 mol % to 40 mol % of AR1 is wherein each of ring R and ring S is independently a C3-20 ring, ring R and ring S share a carbon atom, and each of K1 and K2 is independently a C5-20 conjugated system. Each of AR2, AR3, AR4, and AR5 is independently AR6 or AR6—Z—AR7.Type: ApplicationFiled: July 1, 2020Publication date: January 7, 2021Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yu-Lin CHU, Jen-Chun CHIU, Zu-Chiang GU, Po-Hsien HO, Meng-Hsin CHEN, Chih-Hsiang LIN
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Patent number: 10856944Abstract: A triaxial motion device includes first, second and third bases, first and second power sources, and a workpiece positioning member. The first power source is disposed on the first base and has a first driving shaft. The second base is connected with the first driving shaft through a cannular rotary shaft in a way that the second base is rotatable about a first axis. The second power source is disposed on the first base and has a second driving shaft penetrating through the cannular rotary shaft. The third base is connected with the second driving shaft in a way that the third base is rotatable about a second axis perpendicular to the first axis. The workpiece positioning member is disposed on the third base and rotatable about a third axis perpendicular to the second axis. Therefore, the triaxial motion device has small volume and performs highly precise motion.Type: GrantFiled: November 5, 2018Date of Patent: December 8, 2020Assignee: Hiwin Technologies Corp.Inventor: Yu-Lin Chu
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Publication number: 20200312837Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a first well, a second well and doped regions. The substrate has heavily doped and lightly doped regions over the heavily doped region. The first wells are disposed in the lightly doped region and arranged as an array. The first wells have a conductive type opposite to a conductive type of the heavily doped and lightly doped regions. The second well is disposed in the substrate over the lightly doped region, and has an active region defined by an isolation structure. The first wells are overlapped with the second well. Top ends of the first wells are lower than a bottom end of the second well. The doped regions are separately located in the active region, and have a conductive type opposite to a conductive type of the second well.Type: ApplicationFiled: June 12, 2020Publication date: October 1, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsi-Yu Kuo, Yu-Lin Chu
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Patent number: 10751873Abstract: A robotic arm includes a first driving source and a second driving source mounted on a base frame, a first transmission link driven by the first driving source to turn around a first axis, a second transmission link driven by the second driving source to turn around a second axis that is parallel to the first axis, a third transmission link pivoted to the first transmission link, a first driven link pivoted to the second transmission link, a second driven link pivotally coupled between the first driven link and the base frame, a third driven link pivotally connected with the first and second driven link, and a fourth driven link pivotally coupled between the third driven link and the third transmission link. Thus, the robotic arm of the invention has a compact size and can achieve multi-degree of freedom motion.Type: GrantFiled: November 13, 2018Date of Patent: August 25, 2020Assignee: HIWIN TECHNOLOGIES CORP.Inventors: Ren-Jeng Wang, Cheng-Chin Chen, Yu-Lin Chu
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Patent number: 10685956Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a first well, a second well, and first and second doped regions. The substrate has heavily doped and lightly doped regions. The lightly doped region is disposed over the heavily doped region. The first well is disposed in the lightly doped region. The first well has a conductive type complementary to a conductive type of the heavily doped and lightly doped regions. The second well is disposed in the substrate over the lightly doped region. A location of the first well overlaps a location of the second well. The first and the second doped regions are located in the second well within the active region, and spaced apart from each other. The first and the second doped regions have a same conductive type complementary to a conductive type of the second well.Type: GrantFiled: April 30, 2018Date of Patent: June 16, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsi-Yu Kuo, Yu-Lin Chu
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Publication number: 20200147790Abstract: A robotic arm includes a first driving source and a second driving source mounted on a base frame, a first transmission link driven by the first driving source to turn around a first axis, a second transmission link driven by the second driving source to turn around a second axis that is parallel to the first axis, a third transmission link pivoted to the first transmission link, a first driven link pivoted to the second transmission link, a second driven link pivotally coupled between the first driven link and the base frame, a third driven link pivotally connected with the first and second driven link, and a fourth driven link pivotally coupled between the third driven link and the third transmission link. Thus, the robotic arm of the invention has a compact size and can achieve multi-degree of freedom motion.Type: ApplicationFiled: November 13, 2018Publication date: May 14, 2020Inventors: Ren-Jeng WANG, Cheng-Chin CHEN, Yu-Lin CHU