Abstract: A triaxial motion device includes first, second and third bases, first and second power sources, and a workpiece positioning member. The first power source is disposed on the first base and has a first driving shaft. The second base is connected with the first driving shaft through a cannular rotary shaft in a way that the second base is rotatable about a first axis. The second power source is disposed on the first base and has a second driving shaft penetrating through the cannular rotary shaft. The third base is connected with the second driving shaft in a way that the third base is rotatable about a second axis perpendicular to the first axis. The workpiece positioning member is disposed on the third base and rotatable about a third axis perpendicular to the second axis. Therefore, the triaxial motion device has small volume and performs highly precise motion.

Abstract: An IC structure includes a substrate, a deep n-well (DNW), a first device, a second device, a first electrical path and a second electrical path. The DNW is in the substrate. The first device is formed inside the DNW and connected to a first lower reference voltage and a first higher reference voltage. The second device is formed in the substrate and outside the DNW, and connected to a second lower reference voltage and a second higher reference voltage. The first electrical path is electrically connected between the first device and the second device. The second electrical path is electrically connected between the first lower reference voltage and the second lower reference voltage. A second metal layer that includes the second electrical path is located in an area outside of an area above a first metal layer in which the first electrical path is located.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a first well, a second well, and first and second doped regions. The substrate has heavily doped and lightly doped regions. The lightly doped region is disposed over the heavily doped region. The first well is disposed in the lightly doped region. The first well has a conductive type complementary to a conductive type of the heavily doped and lightly doped regions. The second well is disposed in the substrate over the lightly doped region. A location of the first well overlaps a location of the second well. The first and the second doped regions are located in the second well within the active region, and spaced apart from each other. The first and the second doped regions have a same conductive type complementary to a conductive type of the second well.

Abstract: A medical instrument includes an instrument body and an operating mechanism. The instrument body has a window portion having a light permeable segment. The operating mechanism includes an indicator unit and an operating unit. The indicator unit is disposed in the window portion, and is changeable between a detectable state where the indicator unit is detectable through the light permeable segment of the window portion and a non-detectable state where the indicator unit is non-detectable through the light permeable segment. The operating unit is connected to the indicator unit and operable to change the indicator unit between the detectable and non-detectable states. An endoscopy system including the medical instrument is also disclosed.

Abstract: A package structure includes at least one semiconductor chip, an insulating encapsulation, and a redistribution circuit structure. The semiconductor chip has an active surface and connecting pads distributed thereon. The insulating encapsulation encapsulates the semiconductor chip. The redistribution circuit structure is disposed on and has at least one metallization layer with metal segments, wherein the redistribution circuit structure is electrically connected to the semiconductor chip through the at least one metallization layer and the connecting pads electrically connected thereto. A projection location of a first gap between any two most adjacent connecting pads of the connecting pads is partially overlapped with a projection location of a second gap between any two most adjacent metal segments of the metal segments of the at least one metallization layer in a vertical projection on the active surface of the at least one semiconductor chip.

Abstract: A package structure includes at least one semiconductor chip, an insulating encapsulation, and a redistribution circuit structure. The semiconductor chip has an active surface and connecting pads distributed thereon. The insulating encapsulation encapsulates the semiconductor chip. The redistribution circuit structure is disposed on and has at least one metallization layer with metal segments, wherein the redistribution circuit structure is electrically connected to the semiconductor chip through the at least one metallization layer and the connecting pads electrically connected thereto. A projection location of a first gap between any two most adjacent connecting pads of the connecting pads is partially overlapped with a projection location of a second gap between any two most adjacent metal segments of the metal segments of the at least one metallization layer in a vertical projection on the active surface of the at least one semiconductor chip.

Abstract: A compound, a composition employing the same and a polymer prepared therefrom are provided. The compound has a structure represented by Formula (I): wherein A is B is R1 is C1-10 alkyl, C5-12 cycloalkyl, C6-14 aryl, C3-12 heteroaryl, alkoxy, C6-12 aryloxy, silyl, amino, thiol, or phosphonate group; R2 is H, or C1-10 alkyl; and, R3 is C1-10 alkoxy, C1-10 alkanol, amine, or hydroxy.

Abstract: An IC structure is provided. The IC structure includes a P-type substrate, a deep N-well region in the substrate, a first N-well region on the deep N-well region, a first N-type doped region in the first N-well region, a second N-well region in the substrate, a first P-well region in the substrate, and a discharge circuit. The second N-well region and the first P-well region are separated from the deep N-well region. The discharge circuit includes a first P-type doped region in the first P-well region, a first PMOS transistor formed in the second N-well region, a first electrical path coupled between a source of the first PMOS transistor and the first N-type doped region, and a second electrical path coupled between a drain of the first PMOS transistor and the first P-type doped region.

Abstract: An integrated circuit (IC) structure is provided. The IC structure comprises a deep n-well (DWN), a first circuit, a second circuit, a first power line and a second power line. The first circuit is in the DWN. The second circuit is outside the DWN and electrically connected with the first circuit. The first power line is configured to provide the first circuit with power. The second power line is configured to provide the second circuit with power. The second power line is electrically connected with the first power line. The first power line and the second power line are in different conductive layers.

Abstract: A polymer is provided, which has blocks of A-B, wherein the block A has a structure of and the block B has a structure of Each of R1 is independently H or methyl group, R2 is Each of R3 is independently —C(O)OH, —C(O)NHR6NR7R8, —C(O)OR6NR7R8, or —C(O)OR9, wherein R6 is C1-5 alkylene group, R7 and R8 are independently H, C1-9 alkyl group, C6-9 aryl group, or C7-9 alkylaryl group. R9 is C1-10 alkyl group, C1-20 hydroxyalkyl group or alkyl ester group. R4 is C1-12 alkylene group, C6-12 arylene group, or C7-12 alkylarylene group. R5 is H or C1-4 alkyl group. Ar is wherein X is H, halogen, alkyl group, or aryl group.

Abstract: A polymer is provided, which has blocks of A-B, wherein the block A has a structure of and the block B has a structure of Each of R1 is independently H or methyl group, R2 is Each of R3 is independently —C(O)OH, —C(O)NHR6NR7R8, —C(O)OR6NR7R8, or —C(O)OR9, wherein R6 is C1-5 alkylene group, R7 and R8 are independently H, C1-9 alkyl group, C6-9 aryl group, or C7-9 alkylaryl group. R9 is C1-10 alkyl group, C1-20 hydroxyalkyl group or alkyl ester group. R4 is C1-12 alkylene group, C6-12 arylene group, or C7-12 alkylarylene group. R5 is H or C1-4 alkyl group. Ar is wherein X is H, halogen, alkyl group, or aryl group.

Abstract: An electronic device is disclosed that includes an output device and a detection circuit. The output device is coupled to an output pad, and is turned on according to a protection signal. The detection circuit is configured to detect a voltage level of a control node, to generate the protection signal based on the detected voltage level, and to switch the voltage level to a predetermined voltage level according to the detected voltage level.

Abstract: The semiconductor device for fabricating an IC is provided. The semiconductor device includes a deep n-well (DNW), a first inverter, a second inverter, an electrical path, and a charge-dispelling device. The DNW is formed in a substrate. The first inverter is formed inside the DNW. The second inverter is formed in the substrate and outside the DNW. The electrical path is arranged between the first inverter and the second inverter. The charge-dispelling device is connected between the ground of the first inverter and the ground of the second inverter to develop a bypass path. The impedance of the bypass path is lower than the impedance of the electrical path.

Abstract: An integrated circuit (IC) structure is provided. The IC structure comprises a deep n-well (DWN), a first circuit, a second circuit, a first power line and a second power line. The first circuit is in the DWN. The second circuit is outside the DWN and electrically connected with the first circuit. The first power line is configured to provide the first circuit with power. The second power line is configured to provide the second circuit with power. The second power line is electrically connected with the first power line. The first power line and the second power line are in different conductive layers.

Abstract: An electronic device is disclosed that includes an output device and a detection circuit. The output device is coupled to an output pad, and is turned on according to a protection signal. The detection circuit is configured to detect a voltage level of a control node, to generate the protection signal based on the detected voltage level, and to switch the voltage level to a predetermined voltage level according to the detected voltage level.

Abstract: A circuit that includes a first diode-connected dummy device, a second diode-connected dummy device, a third diode-connected dummy device, a fourth diode-connected dummy device, and a first discharge path. The second diode-connected dummy device connected in cascode with the first diode-connected dummy device. The fourth diode-connected dummy device connected in cascode with the third diode-connected dummy device. The first and the second diode-connected dummy devices are formed in a first region. The third and the fourth diode-connected dummy devices are formed in a second region which is outside the first region. The first discharge path configured to discharge charges from at least one of the first and the second diode-connected dummy devices in the first region to a reference voltage terminal of one of the third and the fourth diode-connected dummy devices in the second region.

Abstract: A compound, and a polymer prepared therefrom, are provided. The compound has a structure represented by Formula (I) or Formula (II): wherein A is R1 is C1-10 alkyl, C5-12 cycloalkyl, C6-14 aryl, C3-12 heteroaryl, C1-10 alkoxy, C6-12 aryloxy, C1-10 silyl, amino, thiol, or phosphonate group; R2 is H, or C1-10 alkyl; and, R3 is C1-10 alkoxy, C1-10 alkanol, amine, or hydroxy.

Abstract: The present invention provides a compound of formula I wherein A, B and C are a repeating unit; each of A and B is an optionally substituted group for forming a conjugated polymer; C is a crosslinkable group; and n is an integer equal to or greater than 1. The present invention further provides an element and an electronic device using the compound of formula I, and more particularly, provides a light emitting diode (LED) device using the compound of formula I.

Abstract: A parallel hybrid circuit comprising a transformer, a first matching resistor, a second matching resistor and an echo cancelling circuit. The transformer comprises: a first side, comprising a transmitting coil group and a receiving coil group, wherein the transmitting coil group comprises at least one transmitting coil, wherein the receiving coil group comprises at least one receiving coil; a second side comprising at least one transceiving coil; wherein the transformer receives a transmitting signal and couples the transmitting signal from the first side to the second side via a first turn ratio, and receives a receiving signal from the transceiving line and couples the receiving signal from the second side to the first side via a second turn ratio. The first, second matching resistors are coupled with the transformer in parallel. The echo cancelling circuit is coupled between the transmitting line and the receiving line.