Abstract: A handheld controller is adapted to control an electronic device. The handheld controller includes a first body, a second body, and a connecting portion. The first body is adapted to be held by a user's hand. The second body is connected to the first body through the connecting portion. The connecting portion is adapted to be clamped between user's fingers. A distance between the first body and at least a portion of the second body is variable.

Abstract: Various embodiments of the present application are directed towards a control gate layout to improve an etch process window for word lines. In some embodiments, an integrated chip comprises a memory array, an erase gate, a word line, and a control gate. The memory array comprises a plurality of cells in a plurality of rows and a plurality of columns. The erase gate and the word line are elongated in parallel along a row of the memory array. The control gate is elongated along the row and is between and borders the erase gate and the word line. Further, the control gate has a pad region protruding towards the erase gate and the word line. Because the pad region protrudes towards the erase gate and the word line, a width of the pad region is spread between word-line and erase-gate sides of the control gate.

Abstract: Methods and systems for controlling an output voltage of a resonant converter during a light load condition. One such method includes generating a normalised conduction time of the resonant converter that varies inversely with a switching frequency of the resonant converter by continuing to operate the resonant converter in a Pulse Frequency Modulation mode at a low switching frequency that is similar to the resonant frequency. The method also includes controlling a power level delivered to a secondary winding of a transformer positioned between a resonant tank and an output rectifier of the resonant converter by regulating the normalised conduction time, where the delivered power level is variable based on load conditions. The method further includes generating an output voltage using the output rectifier wherein the magnitude of the output voltage corresponds to the power level delivered to the secondary winding.

Abstract: Methods and systems for controlling an output voltage of a resonant converter during a light load condition. One such method includes generating a normalised conduction time of the resonant converter that varies inversely with a switching frequency of the resonant converter by continuing to operate the resonant converter in a Pulse Frequency Modulation mode at a low switching frequency that is similar to the resonant frequency. The method also includes controlling a power level delivered to a secondary winding of a transformer positioned between a resonant tank and an output rectifier of the resonant converter by regulating the normalised conduction time, where the delivered power level is variable based on load conditions. The method further includes generating an output voltage using the output rectifier wherein the magnitude of the output voltage corresponds to the power level delivered to the secondary winding.

Abstract: Compounds, compositions, and methods for modulation of Hec1/Nek2 interaction are provided. Such compounds disrupt Nek2/Hec1 binding and may be useful as chemotherapeutic agents for neoplastic diseases.

Abstract: Methods and systems for balancing output currents of parallel connected resonant converters are disclosed. One such method includes matching switching frequencies for a pair of resonant converters. The method also includes carrying AC output currents of resonant tanks of each of the resonant converters through a current controlled voltage source that is coupled to each of the resonant converters of the pair of resonant converters at an AC side of each of the resonant converters of the pair of resonant converters. The method further includes inducing, for the pair of resonant converters, a voltage that is proportional to a difference in the AC currents carried through the current controlled voltage source by passing the AC currents through the current controlled voltage source. The induced voltage is oriented to oppose the greater of the AC currents and to increase the smaller of the AC currents.

Abstract: Compounds, compositions, and methods for modulation of Hec1/Nek2 interaction are provided. Such compounds disrupt Nek2/Hec1 binding and may be useful as chemotherapeutic agents for neoplastic diseases.

Abstract: Disclosed is a use of Helminthostachys zeylanica, ugonins or compounds of formula (I) for the treatment or prevention of metabolic diseases comprising at least one selected from metabolic syndrome, excessive lipid accumulation, obesity, overweight, fatty liver, hepatic steatosis, hepatitis, cirrhosis, liver cancer, dyslipidemia, hyperlipidemia, hypertriglyceridemia, hyperlipoproteinemia, hypercholesterolemia, cardiovascular disease, hyperglycemia, hyperinsulinemia, diabetes mellitus type 2, insulin resistance, insulin disorder, impaired glucose tolerance and a combination thereof.

Abstract: Compounds, compositions, and methods for modulation of Hec1/Nek2 interaction are provided. Such compounds disrupt Nek2/Hec1 binding and may be useful as chemotherapeutic agents for neoplastic diseases.

Abstract: Disclosed herein are compounds, compositions and methods for treating tumors, particularly tumors that metastasize, via inhibiting tumor cells-induced platelet aggregation. The compound of the present disclosure has the formula (I), wherein, n is 2 or 3.

Abstract: Contemplated compositions and methods are drawn to biomarkers and methods related to treatment of neoplastic disease with Hec1 inhibitor. Gene status and/or expression levels of Hec1(HEC), Rb(RB1), and/or p53 (TP53) may be useful as biomarkers for sensitivity to treatment with a Hec1 inhibitor. In addition, Hec 1 inhibitors may show synergistic effects when used in conjunction with cytotoxic drugs.

Abstract: Disclosed is a use of Helminthostachys zeylanica, ugonins or compounds of formula (I) for the treatment or prevention of metabolic diseases comprising at least one selected from metabolic syndrome, excessive lipid accumulation, obesity, overweight, fatty liver, hepatic steatosis, hepatitis, cirrhosis, liver cancer, dyslipidemia, hyperlipidemia, hypertriglyceridemia, hyperlipoproteinemia, hypercholesterolemia, cardiovascular disease, hyperglycemia, hyperinsulinemia, diabetes mellitus type 2, insulin resistance, insulin disorder, impaired glucose tolerance and a combination thereof.

Abstract: Disclosed herein are compounds, compositions and methods for treating tumors, particularly tumors that metastasize, via inhibiting tumor cells-induced platelet aggregation. The compound of the present disclosure has the formula (I), wherein, n is 2 or 3.

Abstract: Compounds, compositions, and methods for modulation of Hec1/Nek2 interaction are provided. Such compounds disrupt Nek2/Hec1 binding and may be useful as chemotherapeutic agents for neoplastic diseases.

Abstract: Compounds, compositions, and methods for modulation of Hec1/Nek2 interaction are provided. Such compounds disrupt Nek2/Hec1 binding and may be useful as chemotherapeutic agents for neoplastic diseases.

Abstract: A semiconductor device includes: a substrate having a base and an array of semiconductor pillars extending from the base, the substrate being formed with a plurality of trenches, each of which extends into the base and has two opposing trench side walls; a first insulative liner layer formed on each of the trench side walls of each of the trenches and divided into upper and lower segments by a gap that leaves a bit-forming surface of each of the trench side walls uncovered by the first insulative liner layer; and a plurality of buried bit lines, each of which extends into the base from the bit-forming surface of a respective one of the trench side walls of each of the trenches.

Abstract: A semiconductor device includes: a substrate having a base and an array of semiconductor pillars extending from the base, the substrate being formed with a plurality of trenches, each of which extends into the base and has two opposing trench side walls; a first insulative liner layer formed on each of the trench side walls of each of the trenches and divided into upper and lower segments by a gap that leaves a bit-forming surface of each of the trench side walls uncovered by the first insulative liner layer; and a plurality of buried bit lines, each of which extends into the base from the bit-forming surface of a respective one of the trench side walls of each of the trenches.

Abstract: A vertical transistor structure comprises a substrate, a plurality of pillars formed on the substrate and spaced from each other, a plurality of trenches each formed between two adjacent pillars, a protection layer formed on the surface of a first side wall and the surface of a second side wall of the trench, a first gate and a second gate respectively formed on the protection layer of the first side wall and the second side wall, and a separation layer covering a bottom wall of the trench. The present invention uses the separation layer functioning as an etch stopping layer to the first gate and the second gate while being etched. Further, thickness of the separation layer is used to control the distance between the bottom wall and the first and second gates and define widths of the drain and the source formed in the pillar via ion implantation.

Abstract: Compounds, compositions, and methods for modulation of Hec1/Nek2 interaction are provided. Such compounds disrupt Nek2/Hec1 binding and may be useful as chemotherapeutic agents for neoplastic diseases.

Abstract: Contemplated compositions and methods are drawn to biomarkers and methods related to treatment of neoplastic disease with Hec1 inhibitor. Gene status and/or expression levels of Hec1(HEC), Rb(RB1), and/or p53 (TP53) may be useful as biomarkers for sensitivity to treatment with a Hec1 inhibitor. In addition, Hec 1 inhibitors may show synergistic effects when used in conjunction with cytotoxic drugs.