Abstract: A self-aligned wet etching process comprises the steps of: etching a substrate having an etch protection layer on a surface thereof to form a plurality of trenches spaced from each other; and sequentially forming an insulating layer, an etch stop layer and a primary insulator in each trench, wherein the primary insulator is filled inside an accommodation space surrounded by the etch stop layer. During the wet etching process, the etch stop layer protects the primary insulator from being etched, whereby is achieved anisotropic wet etching. Further, the present invention expands the contact areas for electrically connecting with external circuits and exempts the electric contactors formed on the contact areas from short circuit caused by excessively etching the primary insulators.

Abstract: A self-aligned wet etching process comprises the steps of: etching a substrate having an etch protection layer on a surface thereof to form a plurality of trenches spaced from each other; and sequentially forming an insulating layer, an etch stop layer and a primary insulator in each trench, wherein the primary insulator is filled inside an accommodation space surrounded by the etch stop layer. During the wet etching process, the etch stop layer protects the primary insulator from being etched, whereby is achieved anisotropic wet etching. Further, the present invention expands the contact areas for electrically connecting with external circuits and exempts the electric contactors formed on the contact areas from short circuit caused by excessively etching the primary insulators.

Abstract: A hot zone heat transfer structure of a Stirling engine is provided. One end of a cylinder includes a heated head, with its end wall connected with a hot air pipe. The cylinder accommodates a piston. The piston has an end surface corresponding to the end wall, between which a hot zone is defined. The end wall is fitted with a protruding heat conductor towards the piston, and the end surface is fitted with a concave heat-conducting portion, enabling normal overlapping of the ends of both the heat conductor and the heat-conducting portion. The overlapping may vary with the changing locations of the piston. A flanged section is set externally onto said heat conductor towards the exterior of the end wall. The heat from the head can be transferred to the central area of the hot zone via the help of the heat conductor and heat-conducting portion.

Abstract: A method for removing the circumferential edge of a dielectric layer on a semiconductor wafer is disclosed. First, a semiconductor wafer having a dielectric layer on its upper surface is provided. Second, the semiconductor wafer is placed and secured on a susceptor. Third, the circumferential edge of the dielectric layer is removed by a ring cutter. Then, the semiconductor wafer is cleaned from its central portion to its edge portion by water jets.

Abstract: An apparatus and a method for cleaning wafers with contact holes or via holes are provided. The apparatus for cleaning wafers comprises a first arm, a second arm, a fixing device, a rotating device and a spraying device. The fixing device, disposed on the first arm, fixes the wafer in a manner such that a surface of the wafer, with contact holes or via holes, faces downward. The rotating device, disposed above the fixing device, rotates the fixing device. The spraying device, disposed on the second arm in a manner such that the spraying device is located beneath the fixing device, sprays the water upwards to the surface of the wafer. By the apparatus and method according to the invention, the possibility of native oxide remaining in the contact holes or the via holes is greatly reduced. In addition, the removal of defects from the surface of the wafer is enhanced.

Abstract: A method for removing the circumferential edge of a dielectric layer on a semiconductor wafer is disclosed. First, a semiconductor wafer having a dielectric layer on its upper surface is provided. Second, the semiconductor wafer is placed and secured on a susceptor. Third, the circumferential edge of the dielectric layer is removed by a ring cutter. Then, the semiconductor wafer is cleaned from its central portion to its edge portion by water jets.

Abstract: An apparatus and a method for cleaning wafers with contact holes or via holes are provided. The apparatus for cleaning wafers comprises a first arm, a second arm, a fixing device, a rotating device and a spraying device. The fixing device, disposed on the first arm, fixes the wafer in a manner such that a surface of the wafer, with contact holes or via holes, faces downward. The rotating device, disposed above the fixing device, rotates the fixing device. The spraying device, disposed on the second arm in a manner such that the spraying device is located beneath the fixing device, sprays the water upwards to the surface of the wafer. By the apparatus and method according to the invention, the possibility of native oxide remaining in the contact holes or the via holes is greatly reduced. In addition, the removal of defects from the surface of the wafer is enhanced.

Abstract: A method of etching a dielectric layer employs steps of: providing a silicon substrate with a surface covered by the dielectric layer; polymer-rich plasma etching to remove part of the dielectric layer and form a polymer film on the exposed regions of the dielectric layer and the silicon substrate; performing an oxygen plasma treatment on the polymer film; and wet etching to completely remove the polymer film.