Patents by Inventor Yu-Ling Lin
Yu-Ling Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11942509Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the firstType: GrantFiled: June 15, 2021Date of Patent: March 26, 2024Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, I-Lun Ma, Bo-Jiun Hu, Yu-Ling Lin, Chien-Chih Liao
-
Publication number: 20240088246Abstract: Various embodiments of the present application are directed towards a control gate layout to improve an etch process window for word lines. In some embodiments, an integrated chip comprises a memory array, an erase gate, a word line, and a control gate. The memory array comprises a plurality of cells in a plurality of rows and a plurality of columns. The erase gate and the word line are elongated in parallel along a row of the memory array. The control gate is elongated along the row and is between and borders the erase gate and the word line. Further, the control gate has a pad region protruding towards the erase gate and the word line. Because the pad region protrudes towards the erase gate and the word line, a width of the pad region is spread between word-line and erase-gate sides of the control gate.Type: ApplicationFiled: November 16, 2023Publication date: March 14, 2024Inventors: Yu-Ling Hsu, Ping-Cheng Li, Hung-Ling Shih, Po-Wei Liu, Wen-Tuo Huang, Yong-Shiuan Tsair, Chia-Sheng Lin, Shih Kuang Yang
-
Publication number: 20240090230Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.Type: ApplicationFiled: January 9, 2023Publication date: March 14, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-Ling Lu, Chen-Jun Wu, Ya-Yun Cheng, Sheng-Chih Lai, Yi-Ching Liu, Yu-Ming Lin, Feng-Cheng Yang, Chung-Te Lin
-
Publication number: 20240071947Abstract: A semiconductor package including a ring structure with one or more indents and a method of forming are provided. The semiconductor package may include a substrate, a first package component bonded to the substrate, wherein the first package component may include a first semiconductor die, a ring structure attached to the substrate, wherein the ring structure may encircle the first package component in a top view, and a lid structure attached to the ring structure. The ring structure may include a first segment, extending along a first edge of the substrate, and a second segment, extending along a second edge of the substrate. The first segment and the second segment may meet at a first corner of the ring structure, and a first indent of the ring structure may be disposed at the first corner of the ring structure.Type: ApplicationFiled: August 30, 2022Publication date: February 29, 2024Inventors: Yu-Ling Tsai, Lai Wei Chih, Meng-Tsan Lee, Hung-Pin Chang, Li-Han Hsu, Chien-Chia Chiu, Cheng-Hung Lin
-
Patent number: 11916314Abstract: A mobile device includes a housing, a first radiation element, a second radiation element, a third radiation element, a first switch element, and a second switch element. The first radiation element has a first feeding point. The second radiation element has a second feeding point. The first radiation element, the second radiation element, and the third radiation element are distributed over the housing. The first switch element is closed or open, so as to selectively couple the first radiation element to the third radiation element. The second switch element is closed or open, so as to selectively couple the second radiation element to the third radiation element. An antenna structure is formed by the first radiation element, the second radiation element, and the third radiation element.Type: GrantFiled: May 12, 2022Date of Patent: February 27, 2024Assignee: HTC CorporationInventors: Cheng-Hung Lin, Szu-Po Wang, Chia-Te Chien, Chun-Chieh Wang, Kang-Ling Li, Chun-Hsien Lee, Yu-Chieh Chiu
-
Patent number: 11908961Abstract: A transparent electronic device includes an organic film, an amorphous transparent oxycarbide layer, and a matrix layer. The organic film includes a polymer containing carboxyl groups (—COOH). The amorphous transparent oxycarbide layer is disposed on the organic film and consists of a metal element, carbon element, oxygen element and an additional element. The metal element is selected from molybdenum (Mo), indium (In), tin (Sn), zinc (Zn), cadmium (Cd) and a combination thereof. An atomic number percentage of the additional element is equal to or greater than 0%, and is less than the least of an atomic number percentage of the metal element, an atomic number percentage of the oxygen element and an atomic number percentage of the carbon element. The matrix layer is disposed on the amorphous transparent oxycarbide layer. A manufacturing method of a transparent electronic device is also provided.Type: GrantFiled: October 21, 2022Date of Patent: February 20, 2024Assignee: AUO CORPORATIONInventors: Yu-Ling Lin, Tsung-Ying Ke
-
Patent number: 11894491Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.Type: GrantFiled: March 7, 2023Date of Patent: February 6, 2024Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Tsung-Hsun Chiang, Bo-Jiun Hu, Wen-Hung Chuang, Yu-Ling Lin
-
Publication number: 20240023016Abstract: A scheduling method of scheduling a target wake time (TWT) communication between an access point and at least one station. The scheduling method includes the access point adjusting a broadcast TWT schedule according to a power saving setting, and the access point transmitting the broadcast TWT schedule. The broadcast TWT schedule includes a broadcast TWT SP start time, a broadcast TWT service period and a broadcast TWT interval.Type: ApplicationFiled: May 9, 2023Publication date: January 18, 2024Applicant: Realtek Semiconductor Corp.Inventor: Yu-Ling Lin
-
Patent number: 11764332Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a lateral outer perimeter surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; a first pad portion and a second pad portion formed on the semiconductor stack to respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the second pad portion and the first pad portion are arranged in a first direction; wherein the plurality of vias is arranged in a plurality of rows, the plurality of rows are arranged in the first direction and includes a first row and a second row, the first row is covered by the second pad portion, the second row is not covered by the first pad portion and the second pad portion, wheType: GrantFiled: April 4, 2022Date of Patent: September 19, 2023Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Tsung-Hsun Chiang, Bo-Jiun Hu, Wen-Hung Chuang, Yu-Ling Lin
-
Publication number: 20230261148Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.Type: ApplicationFiled: April 20, 2023Publication date: August 17, 2023Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Tzu-Yao TSENG, Bo-Jiun HU, Tsung-Hsun CHIANG, Wen-Hung CHUANG, Kuan-Yi LEE, Yu-Ling LIN, Chien-Fu SHEN, Tsun-Kai KO
-
Publication number: 20230238488Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.Type: ApplicationFiled: March 7, 2023Publication date: July 27, 2023Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Tzu-Yao TSENG, Tsung-Hsun CHIANG, Bo-Jiun HU, Wen-Hung CHUANG, Yu-Ling LIN
-
Publication number: 20230215998Abstract: A light-emitting device includes a semiconductor stack, first and second insulative layers, a reflective conductive structure, and first and second pads. The semiconductor stack includes a first semiconductor layer, and a mesa having an active region having a second semiconductor layer and formed on the first semiconductor layer. The first insulative layer is formed on the semiconductor stack and has first openings. The reflective conductive structure is formed on the first insulative layer and is electrically connected to the second semiconductor layer through the first openings. The second insulative layer is formed on the reflective conductive structure and includes second openings and a contact area covering portions overlapped with the first and second openings. A first pad is formed on the second insulative layer and electrically connected to the first semiconductor layer. A second pad formed on the second insulative layer and electrically connected to the second semiconductor layer.Type: ApplicationFiled: December 28, 2022Publication date: July 6, 2023Inventors: Chao-Hsing CHEN, Meng-Hsiang HONG, Chi-Shiang HSU, Yen-Liang KUO, Chien-Ya HUNG, Yong-Yang CHEN, Yu-Ling LIN, Xue-Cheng YAO
-
Patent number: 11658269Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.Type: GrantFiled: March 19, 2021Date of Patent: May 23, 2023Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Bo-Jiun Hu, Tsung-Hsun Chiang, Wen-Hung Chuang, Kuan-Yi Lee, Yu-Ling Lin, Chien-Fu Shen, Tsun-Kai Ko
-
Publication number: 20230155041Abstract: A transparent electronic device includes an organic film, an amorphous transparent oxycarbide layer, and a matrix layer. The organic film includes a polymer containing carboxyl groups (—COOH). The amorphous transparent oxycarbide layer is disposed on the organic film and consists of a metal element, carbon element, oxygen element and an additional element. The metal element is selected from molybdenum (Mo), indium (In), tin (Sn), zinc (Zn), cadmium (Cd) and a combination thereof. An atomic number percentage of the additional element is equal to or greater than 0%, and is less than the least of an atomic number percentage of the metal element, an atomic number percentage of the oxygen element and an atomic number percentage of the carbon element. The matrix layer is disposed on the amorphous transparent oxycarbide layer. A manufacturing method of a transparent electronic device is also provided.Type: ApplicationFiled: October 21, 2022Publication date: May 18, 2023Inventors: Yu-Ling LIN, Tsung-Ying KE
-
Publication number: 20220409552Abstract: The present invention provides novel pharmaceutical formulations comprising derivatives of NDGA, including M4N (tetra-0-methyl nordihydroguaiaretic acid) and temozolomide and their use in the inhibition and treatment of neoplastic diseases, including glioblastoma multiforme, lung and other cancers.Type: ApplicationFiled: November 25, 2020Publication date: December 29, 2022Inventors: Ru Chih C. Huang, Jong Ho Chun, Yu-Ling Lin, Yu-Chuan LIang, Kuang-Wen Liao, Tiffany Jackson, David Mold, Chien-Hsien Lai
-
Publication number: 20220388202Abstract: A multi-shot moulding part structure includes a first structural part, an ink decoration layer, and a second structural part. The first structural part has a first area surface, a second area surface, and a joining surface located on the second area surface. The joining surface is non-parallel to the second area surface. The ink decoration layer is spread on the first area surface and the second area surface, but not on the joining surface. The second structural part is combined with the first structural part and covers the second area surface. The second structural part touches the joining surface. By the second structural part touching the joining surface of the first structural part that is not coated with the ink decoration layer, the structural bonding strength between the first structural part and the second structural part is enhanced.Type: ApplicationFiled: August 31, 2021Publication date: December 8, 2022Applicants: Inventec (Pudong) Technology Corp., Inventec CorporationInventors: Wen-Ching Lin, Ting-Yu Wang, Fa-Chih Ke, Yu-Ling Lin, Wen-Hsiang Chen
-
Patent number: 11410952Abstract: An integrated circuit package includes a die. An electrically conductive layer comprises a redistribution layer (RDL) in the die, or a micro-bump layer above the die, or both. The micro bump layer comprises at least one micro-bump line. A filter comprises the electrically conductive layer. A capacitor comprises an electrode formed in the electrically conductive layer.Type: GrantFiled: July 8, 2020Date of Patent: August 9, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hsiao-Tsung Yen, Jhe-Ching Lu, Yu-Ling Lin, Chin-Wei Kuo, Min-Chie Jeng
-
Publication number: 20220231196Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a lateral outer perimeter surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; a first pad portion and a second pad portion formed on the semiconductor stack to respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the second pad portion and the first pad portion are arranged in a first direction; wherein the plurality of vias is arranged in a plurality of rows, the plurality of rows are arranged in the first direction and includes a first row and a second row, the first row is covered by the second pad portion, the second row is not covered by the first pad portion and the second pad portion, wheType: ApplicationFiled: April 4, 2022Publication date: July 21, 2022Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Tzu-Yao TSENG, Tsung-Hsun CHIANG, Bo-Jiun HU, Wen-Hung CHUANG, Yu-Ling LIN
-
Patent number: 11329195Abstract: A semiconductor light-emitting device includes a substrate; a first semiconductor layer and a second semiconductor layer formed on the substrate, wherein the first semiconductor layer includes a first exposed portion and a second portion; a plurality of first trenches formed on the substrate and including a surface composed by the first exposed portion; a second trench formed on the substrate and including a surface composed by the second exposed portion at a periphery region of the semiconductor light-emitting device, wherein each of the plurality of first trenches is branched from the second trench; and a patterned metal layer formed on the second semiconductor layer and including a first metal region and a second metal region, and portions of the second metal region are formed in the plurality of first trenches and the second trench to electrically connect to the first exposed portion and the second exposed portion.Type: GrantFiled: July 24, 2020Date of Patent: May 10, 2022Assignee: EPISTAR CORPORATIONInventors: Chao-Hsing Chen, Jia-Kuen Wang, Tzu-Yao Tseng, Tsung-Hsun Chiang, Bo-Jiun Hu, Wen-Hung Chuang, Yu-Ling Lin
-
Patent number: 11145767Abstract: A semiconductor structure is provided. The semiconductor structure includes a floating substrate; and a capacitor grounded and connected to the floating substrate. A method of manufacturing a semiconductor structure is also provided.Type: GrantFiled: March 30, 2020Date of Patent: October 12, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsiao-Tsung Yen, Yu-Ling Lin, Chin-Wei Kuo, Ho-Hsiang Chen, Chewn-Pu Jou, Min-Chie Jeng