Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

Abstract: A device includes a substrate, and a vertical inductor over the substrate. The vertical inductor includes a plurality of parts formed of metal, wherein each of the parts extends in one of a plurality of planes perpendicular to a major surface of the substrate. Metal lines interconnect neighboring ones of the plurality of parts of the vertical inductor.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a floating substrate; and a capacitor grounded and connected to the floating substrate. A method of manufacturing a semiconductor structure is also provided.

Abstract: The present invention provides an array substrate and a manufacturing method thereof. Etching stop patterns or auxiliary conductive patterns of a patterned auxiliary conductive layer are disposed corresponding to heavily doped regions of a patterned semiconductor layer, and source/drain electrodes may be electrically connected to the heavily doped regions via the etching stop patterns or the auxiliary conductive patterns. The production yield and the uniformity of electrical properties may be enhanced accordingly.

Abstract: The present invention relates to a monoclonal antibody that inhibits immunosuppressive functions of pathogens, antigen-binding fragment thereof, and hybridomas producing such antibody. The monoclonal antibody or antigen-binding fragment thereof bind to a peptide consisting an amino acid sequence represented by MEKVGKDGVITVE (SEQ ID NO: 1). The present invention also discloses use of the invented monoclonal antibody or antigen-binding fragment thereof, and method of preparation for such hybridomas.

Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first

Abstract: The present invention relates to a monoclonal antibody that inhibits immunosuppressive functions of pathogens, antigen-binding fragment thereof, and hybridomas producing such antibody. The monoclonal antibody or antigen-binding fragment thereof bind to a peptide consisting an amino acid sequence represented by MEKVGKDGVITVE (SEQ ID NO: 1). The present invention also discloses use of the invented monoclonal antibody or antigen-binding fragment thereof, and method of preparation for such hybridomas.

Abstract: In accordance with the present invention, the immunoregulatory activity of low doses of P4N was investigated. Unlike previously described antitumor drugs, low dose P4N, in doses of about 1 to 10 mg/kg, or at concentrations of about 10 to 100 nM, was surprisingly found to contribute to humoral immunity by raising the titers and activities of autoantibodies against GRP78 and F1F0 ATP synthase on the surface of CT26 cells, and inducing B cell proliferation and differentiation of plasma cells. Methods for inducing B cell proliferation, inducing BAFF stimulated B cell proliferation, and suppressing or inhibition growth of a neoplasia are provided.

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer; a plurality of first trenches penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer; a second trench penetrating the second semiconductor layer and the active layer to expose the first semiconductor layer, wherein the second trench is disposed near an outmost edge of the active layer, and surrounds the active layer and the plurality of first trenches; a patterned metal layer formed on the second semiconductor layer and formed in one of the plurality of first trenches or the second trench; and a first pad portion and a second pad portion both formed on the second semiconductor layer and electrically connecting the second semiconductor layer and the first semiconductor layer respectively.

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

Abstract: Methods and apparatus for forming a semiconductor device package with a transmission line using a micro-bump layer are disclosed. The micro-bump layer may comprise micro-bumps and micro-bump lines, formed between a top device and a bottom device. A signal transmission line may be formed using a micro-bump line above a bottom device. A ground plane may be formed using a redistribution layer (RDL) within the bottom device, or using additional micro-bump lines. The RDL formed ground plane may comprise open slots. There may be RDLs at the bottom device and the top device above and below the micro-bump lines to form parts of the ground planes.

Abstract: A device includes a substrate, and a vertical inductor over the substrate. The vertical inductor includes a plurality of parts formed of metal, wherein each of the parts extends in one of a plurality of planes perpendicular to a major surface of the substrate. Metal lines interconnect neighboring ones of the plurality of parts of the vertical inductor.

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

Abstract: A device includes a substrate, and a vertical inductor over the substrate. The vertical inductor includes a plurality of parts formed of metal, wherein each of the parts extends in one of a plurality of planes perpendicular to a major surface of the substrate. Metal lines interconnect neighboring ones of the plurality of parts of the vertical inductor.

Abstract: Methods and apparatus for forming a semiconductor device package with a transmission line using a micro-bump layer are disclosed. The micro-bump layer may comprise micro-bumps and micro-bump lines, formed between a top device and a bottom device. A signal transmission line may be formed using a micro-bump line above a bottom device. A ground plane may be formed using a redistribution layer (RDL) within the bottom device, or using additional micro-bump lines. The RDL formed ground plane may comprise open slots. There may be RDLs at the bottom device and the top device above and below the micro-bump lines to form parts of the ground planes.

Abstract: In accordance with the present invention, the immunoregulatory activity of low doses of P4N was investigated. Unlike previously described antitumor drugs, low dose P4N, in doses of about 1 to 10 mg/kg, or at concentrations of about 10 to 100 nM, was surprisingly found to contribute to humoral immunity by raising the titers and activities of autoantibodies against GRP78 and F1F0 ATP synthase on the surface of CT26 cells, and inducing B cell proliferation and differentiation of plasma cells. Methods for inducing endogenous antitumor autoantibodies (EAA) in a subject having a neoplasia comprising administering to the subject an effective amount of the nordihydroguaiaretic acid (NDGA) derivative P4N, or salts, solvates and stereoisomers thereof, as well as methods for inducing B cell proliferation, inducing BAFF stimulated B cell proliferation, and suppressing or inhibition growth of a neoplasia are also provided.

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and the second pad are separated from each other with a distance, which define a region between the first pad and the second pad on the semiconductor stack; and multiple vias penetrating the active layer to expose the first semiconductor layer, wherein the first pad and the second pad are formed on regions other than the multiple vias.

Abstract: Interposer and semiconductor package embodiments provide for the isolation and suppression of electronic noise such as EM emissions in the semiconductor package. The interposer includes shield structures in various embodiments, the shield structures blocking the electrical noise from the noise source, from other electrical signals or devices. The shields include solid structures and some embodiments and decoupling capacitors in other embodiments. The coupling structures includes multiple rows of solder balls included in strips that couple the components and surround and contain the source of electrical noise.

Abstract: The present subject matter relates to fabrication of micro-arc oxidation (MAO) based insert-molded components. In an example implementation, a method of fabricating a MAO based insert-molded component comprises forming an insert-molded component and oxidizing the insert-molded component through MAO. The insert-molded component has a metal body molded with a plastic body. On oxidation of the insert-molded component through MAO an oxide layer is formed on the metal body.