Patents by Inventor Yu-Lun Chueh

Yu-Lun Chueh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10475742
    Abstract: A method of forming a semiconductor device structure includes: forming a first conductive structure over a substrate, the first conductive structure including twin boundaries; and wherein the forming the first conductive structure includes manipulating process conditions so as to promote formation of the twin boundaries resulting in a promoted density of twin boundaries such that the first conductive structure has an increased failure current density (FCD) relative to a baseline FCD of an otherwise substantially corresponding second conductive structure which has an unpromoted density of twin boundaries, the unpromoted density being less than the promoted density and such that the first conductive structure has a resistance which is substantially the same as the second conductive structure.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: November 12, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jian-Hong Lin, Chwei-Ching Chiu, Yung-Huei Lee, Chien-Neng Liao, Yu-Lun Chueh, Tsung-Cheng Chan, Chun-Lung Huang
  • Publication number: 20190325906
    Abstract: A magnetic recording device includes a substrate, an intermediate layer disposed on the substrate, a magnetic recording layer disposed on the intermediate layer, and a graphene overcoat disposed on the magnetic recording layer. The graphene overcoat includes at least one layer of a graphene monoatomic layer which is a sheet-like monoatomic layer of sp2 bonded carbon atoms. A transition layer is interposed between the graphene overcoat and the magnetic recording layer. The transition layer includes carbon and at least one metal of the magnetic recording layer.
    Type: Application
    Filed: July 2, 2019
    Publication date: October 24, 2019
    Inventors: Moon-Sun Lin, TOMOO SHIGE, Shih-Chin Chen, Yu-Lun Chueh, Li-Chia Yang, Yu-Ze Chen, Yao-Jen Kuo
  • Patent number: 10283450
    Abstract: A method, for forming a semiconductor device structure, includes: forming a conductive structure over a substrate, wherein the conductive structure includes twin boundaries. The forming the conductive structure includes: manipulating process conditions so as to promote formation of the twin boundaries and yet control a density of the twin boundaries to be outside a range for which a portion of a curve is an asymptote of a constant value, the curve representing values of an atomic migration ratio corresponding to values of the density of the twin boundaries.
    Type: Grant
    Filed: August 9, 2017
    Date of Patent: May 7, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jian-Hong Lin, Chwei-Ching Chiu, Yung-Huei Lee, Chien-Neng Liao, Yu-Lun Chueh, Tsung-Cheng Chan, Chun-Lung Huang
  • Publication number: 20190103351
    Abstract: A method of forming a semiconductor device structure includes: forming a first conductive structure over a substrate, the first conductive structure including twin boundaries; and wherein the forming the first conductive structure includes manipulating process conditions so as to promote formation of the twin boundaries resulting in a promoted density of twin boundaries such that the first conductive structure has an increased failure current density (FCD) relative to a baseline FCD of an otherwise substantially corresponding second conductive structure which has an unpromoted density of twin boundaries, the unpromoted density being less than the promoted density and such that the first conductive structure has a resistance which is substantially the same as the second conductive structure.
    Type: Application
    Filed: November 30, 2018
    Publication date: April 4, 2019
    Inventors: Jian-Hong LIN, Chwei-Ching CHIU, Yung-Huei LEE, Chien-Neng LIAO, Yu-Lun CHUEH, Tsung-Cheng CHAN, Chun-Lung HUANG
  • Publication number: 20180346782
    Abstract: A working fluid in cooperation with a solar thermal system comprises a heat conduction medium and a plurality of metal particles mixed in the heat conduction medium. Each of the metal particles includes a metal particle and a protection layer, and the protection layer is an oxide and covers the metal particle. A manufacturing method of metal particles is also disclosed.
    Type: Application
    Filed: August 13, 2018
    Publication date: December 6, 2018
    Inventors: Yu-Lun CHUEH, Ming-Chang LU
  • Patent number: 10115848
    Abstract: A method of transferring a thin film includes: providing a first element structure, wherein the first element structure includes a first substrate and a functional film layer formed on the first substrate; completely removing the first substrate, wherein steps of the completely removing the first substrate includes: conducting an etching step to erode the first substrate, and conducting a grinding step to planarize the eroded first substrate; and after completely removing the first substrate, attaching the functional film layer on a second substrate to form a second element structure.
    Type: Grant
    Filed: September 26, 2016
    Date of Patent: October 30, 2018
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Yu-Lun Chueh, Kuan-Chun Tseng, Yu-Ting Yen
  • Patent number: 10077390
    Abstract: A working fluid in cooperation with a solar thermal system comprises a heat conduction medium and a plurality of metal particles mixed in the heat conduction medium. Each of the metal particles includes a metal particle and a protection layer, and the protection layer is an oxide and covers the metal particle. A manufacturing method of metal particles is also disclosed.
    Type: Grant
    Filed: July 20, 2015
    Date of Patent: September 18, 2018
    Assignee: National Tsing Hua University
    Inventors: Yu-Lun Chueh, Ming-Chang Lu, Chih-Chung Lai, Shih-Ming Lin, Yuan-Da Chu
  • Patent number: 9840764
    Abstract: A method of fabricating transition metal dichalcogenides includes a preparing step, a steaming step and a depositing step. The preparing step is performed for providing a transition metal substrate, a reactive gas and a solid chalcogenide. The steaming step is performed for heating the solid chalcogenide to generate a chalcogenide gas in a steaming space. The depositing step is performed for introducing the reactive gas into the chalcogenide gas to ionize the chalcogenide gas so as to generate a chalcogenide plasma in a depositing space. The depositing step is performed under a process vacuum pressure from low vacuum pressure to atmospheric pressure. The reactive gas and the chalcogenide gas are flowed from top to bottom through a top of the transition metal substrate. The loading substrate is heated at a loading substrate temperature, and the steaming space is different from the depositing space.
    Type: Grant
    Filed: September 30, 2015
    Date of Patent: December 12, 2017
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Yu-Lun Chueh, Henry Medina, Yu-Ze Chen, Jian-Guang Li, Teng-Yu Su
  • Publication number: 20170338178
    Abstract: A method, for forming a semiconductor device structure, includes: forming a conductive structure over a substrate, wherein the conductive structure includes twin boundaries. The forming the conductive structure includes: manipulating process conditions so as to promote formation of the twin boundaries and yet control a density of the twin boundaries to be outside a range for which a portion of a curve is an asymptote of a constant value, the curve representing values of an atomic migration ratio corresponding to values of the density of the twin boundaries.
    Type: Application
    Filed: August 9, 2017
    Publication date: November 23, 2017
    Inventors: Jian-Hong LIN, Chwei-Ching CHIU, Yung-Huei LEE, Chien-Neng LIAO, Yu-Lun CHUEH, Tsung-Cheng CHAN, Chun-Lung HUANG
  • Patent number: 9761523
    Abstract: A semiconductor device structure with twin-boundaries and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive structure formed over the substrate. The conductive structure includes twin boundaries, and a density of the twin boundaries is in a range from about 25 ?m?1 to about 250 ?m?1.
    Type: Grant
    Filed: August 21, 2015
    Date of Patent: September 12, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jian-Hong Lin, Chwei-Ching Chiu, Yung-Huei Lee, Chien-Neng Liao, Yu-Lun Chueh, Tsung-Cheng Chan, Chun-Lung Huang
  • Publication number: 20170088945
    Abstract: A method of fabricating transition metal dichalcogenides includes a preparing step, a steaming step and a depositing step. The preparing step is performed for providing a transition metal substrate, a reactive gas and a solid chalcogenide. The steaming step is performed for heating the solid chalcogenide to generate a chalcogenide gas in a steaming space. The depositing step is performed for introducing the reactive gas into the chalcogenide gas to ionize the chalcogenide gas so as to generate a chalcogenide plasma in a depositing space. The depositing step is performed under a process vacuum pressure from low vacuum pressure to atmospheric pressure. The reactive gas and the chalcogenide gas are flowed from top to bottom through a top of the transition metal substrate. The loading substrate is heated at a loading substrate temperature, and the steaming space is different from the depositing space.
    Type: Application
    Filed: September 30, 2015
    Publication date: March 30, 2017
    Inventors: Yu-Lun CHUEH, Henry MEDINA, Yu-Ze CHEN, Jian-Guang LI, Teng-Yu SU
  • Publication number: 20170092794
    Abstract: A method of transferring a thin film includes: providing a first element structure, wherein the first element structure includes a first substrate and a functional film layer formed on the first substrate; completely removing the first substrate, wherein steps of the completely removing the first substrate includes: conducting an etching step to erode the first substrate, and conducting a grinding step to planarize the eroded first substrate; and after completely removing the first substrate, attaching the functional film layer on a second substrate to form a second element structure.
    Type: Application
    Filed: September 26, 2016
    Publication date: March 30, 2017
    Inventors: YU-LUN CHUEH, KUAN-CHUN TSENG, YU-TING YEN
  • Publication number: 20170053865
    Abstract: A semiconductor device structure with twin-boundaries and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive structure formed over the substrate. The conductive structure includes twin boundaries, and a density of the twin boundaries is in a range from about 25 ?m?1 to about 250 ?m?1.
    Type: Application
    Filed: August 21, 2015
    Publication date: February 23, 2017
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Jian-Hong LIN, Chwei-Ching CHIU, Yung-Huei LEE, Chien-Neng LIAO, Yu-Lun CHUEH, Tsung-Cheng CHAN, Chun-Lung HUANG
  • Patent number: 9460919
    Abstract: A manufacturing method of a two-dimensional transition-metal chalcogenide thin film includes providing a substrate, providing a reaction film, providing a source and providing a microwave. The substrate is made of material having dipole moments. The reaction film, disposed on the substrate, has a predefined thickness and includes a transition-metal compound. The source includes S, Se, or Te. The substrate is heated by the microwave to produce a heat energy to the reaction film and the source; thus a chemical reaction takes place and the two-dimensional transition-metal chalcogenide thin film is formed on the substrate. The two-dimensional transition-metal thin film includes a plurality of elements, and each of the elements aligns along a predefined direction by controlling a value of the predefined thickness.
    Type: Grant
    Filed: March 4, 2016
    Date of Patent: October 4, 2016
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Yu-Lun Chueh, Yu-Ze Chen, Yi-Chen Hsieh, Henry Medina
  • Publication number: 20150322323
    Abstract: A working fluid in cooperation with a solar thermal system comprises a heat conduction medium and a plurality of metal particles mixed in the heat conduction medium. Each of the metal particles includes a metal particle and a protection layer, and the protection layer is an oxide and covers the metal particle. A manufacturing method of metal particles is also disclosed.
    Type: Application
    Filed: July 20, 2015
    Publication date: November 12, 2015
    Inventors: Yu-Lun CHUEH, Ming-Chang LU, Chih-Chung LAI, Shih-Ming LIN, Yuan-Da CHU
  • Patent number: 9159918
    Abstract: A resistive random access memory includes a first electrode, a second electrode and a first metal oxide composite layer. The second electrode is opposite to the first electrode. The first metal oxide composite layer is disposed between the first electrode and the second electrode. The first metal oxide composite layer has a film layer and a nanorod structure.
    Type: Grant
    Filed: January 8, 2014
    Date of Patent: October 13, 2015
    Assignee: National Tsing Hua University
    Inventors: Yu-Lun Chueh, Chi-Hsin Huang
  • Publication number: 20150259226
    Abstract: This disclosure provides a desalination apparatus having a first electrode plate, a first filtering unit, a second filtering unit and a second electrode plate arranged in sequence as well as a power supply unit. Each of the filtering units comprising: an insulation substrate having a plurality of trench holes penetrating through the insulation substrate; a conductive layer formed on the insulation substrate and sidewalls of the plurality of trench holes; and an insulation layer formed on the conductive layer and the sidewalls of the plurality of trench holes; wherein the power supply unit provides the first filtering unit, the second filtering unit, the first electrode plate and the second electrode plate with a first electric potential of positive value, a second electric potential of negative value, a third electric potential and a fourth electric potential, respectively, and the third electric potential is larger than the fourth electric potential.
    Type: Application
    Filed: March 11, 2015
    Publication date: September 17, 2015
    Inventors: FAN-GANG TSENG, JEN-KUEI WU, CHIA-JUNG CHANG, YU-LUN CHUEH
  • Patent number: 9040144
    Abstract: A filtering film structure includes a film, a conductive layer and a dielectric layer. The film includes a plurality of holes. The conductive layer is disposed on the inner surface of the holes, and the dielectric layer is disposed on the conductive layer. When applying a voltage to the conductive layer, an electrical charge layer forms on the surface of the dielectric layer.
    Type: Grant
    Filed: September 4, 2012
    Date of Patent: May 26, 2015
    Assignee: NATIONAL TSING HUA UNIVERSITY
    Inventors: Fan-Gang Tseng, Yu-Lun Chueh, Chia-Jung Chang, Wen-Chih Chang, Yu-Sheng Huang
  • Patent number: 9023663
    Abstract: The object of the present invention is to provide a method for preparing a nano-sheet array structure of a Group V-VI semiconductor, comprising: (A) providing an electrolyte containing a hydrogen ion and disposing an auxiliary electrode and a working electrode in the electrolyte, wherein the working electrode comprises a Group V-VI semiconductor bulk; and (B) applying a redox reaction bias to the auxiliary electrode and the working electrode to form a nano-sheet array structure on the bulk.
    Type: Grant
    Filed: April 30, 2014
    Date of Patent: May 5, 2015
    Assignee: National Tsing Hua University
    Inventors: Yu-Lun Chueh, Hung-Wei Tsai, Tsung-Cheng Chan
  • Publication number: 20150104566
    Abstract: A manufacturing method of graphene film includes the steps of: disposing a substrate in a reaction chamber including an inlet and an outlet; providing a metallic catalytic material into the reaction chamber; providing a reducing gas into the reaction chamber; raising the temperature of the reaction chamber to a deposition temperature; providing a carbon-containing gas into the reaction chamber; and generating a plurality of carbon atoms from the carbon-containing gas under the assistance of the metallic catalytic material and the atoms deposited on the substrate to form a graphene film. The manufacturing method of graphene film is capable of depositing a graphene film on the substrate and is advantageous for a transfer-free process in the following application.
    Type: Application
    Filed: August 12, 2014
    Publication date: April 16, 2015
    Inventors: Wen-Chun YEN, Yu-Lun CHUEH