Patents by Inventor Yu-Lun Chueh
Yu-Lun Chueh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9460919Abstract: A manufacturing method of a two-dimensional transition-metal chalcogenide thin film includes providing a substrate, providing a reaction film, providing a source and providing a microwave. The substrate is made of material having dipole moments. The reaction film, disposed on the substrate, has a predefined thickness and includes a transition-metal compound. The source includes S, Se, or Te. The substrate is heated by the microwave to produce a heat energy to the reaction film and the source; thus a chemical reaction takes place and the two-dimensional transition-metal chalcogenide thin film is formed on the substrate. The two-dimensional transition-metal thin film includes a plurality of elements, and each of the elements aligns along a predefined direction by controlling a value of the predefined thickness.Type: GrantFiled: March 4, 2016Date of Patent: October 4, 2016Assignee: NATIONAL TSING HUA UNIVERSITYInventors: Yu-Lun Chueh, Yu-Ze Chen, Yi-Chen Hsieh, Henry Medina
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Publication number: 20150322323Abstract: A working fluid in cooperation with a solar thermal system comprises a heat conduction medium and a plurality of metal particles mixed in the heat conduction medium. Each of the metal particles includes a metal particle and a protection layer, and the protection layer is an oxide and covers the metal particle. A manufacturing method of metal particles is also disclosed.Type: ApplicationFiled: July 20, 2015Publication date: November 12, 2015Inventors: Yu-Lun CHUEH, Ming-Chang LU, Chih-Chung LAI, Shih-Ming LIN, Yuan-Da CHU
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Patent number: 9159918Abstract: A resistive random access memory includes a first electrode, a second electrode and a first metal oxide composite layer. The second electrode is opposite to the first electrode. The first metal oxide composite layer is disposed between the first electrode and the second electrode. The first metal oxide composite layer has a film layer and a nanorod structure.Type: GrantFiled: January 8, 2014Date of Patent: October 13, 2015Assignee: National Tsing Hua UniversityInventors: Yu-Lun Chueh, Chi-Hsin Huang
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Publication number: 20150259226Abstract: This disclosure provides a desalination apparatus having a first electrode plate, a first filtering unit, a second filtering unit and a second electrode plate arranged in sequence as well as a power supply unit. Each of the filtering units comprising: an insulation substrate having a plurality of trench holes penetrating through the insulation substrate; a conductive layer formed on the insulation substrate and sidewalls of the plurality of trench holes; and an insulation layer formed on the conductive layer and the sidewalls of the plurality of trench holes; wherein the power supply unit provides the first filtering unit, the second filtering unit, the first electrode plate and the second electrode plate with a first electric potential of positive value, a second electric potential of negative value, a third electric potential and a fourth electric potential, respectively, and the third electric potential is larger than the fourth electric potential.Type: ApplicationFiled: March 11, 2015Publication date: September 17, 2015Inventors: FAN-GANG TSENG, JEN-KUEI WU, CHIA-JUNG CHANG, YU-LUN CHUEH
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Patent number: 9040144Abstract: A filtering film structure includes a film, a conductive layer and a dielectric layer. The film includes a plurality of holes. The conductive layer is disposed on the inner surface of the holes, and the dielectric layer is disposed on the conductive layer. When applying a voltage to the conductive layer, an electrical charge layer forms on the surface of the dielectric layer.Type: GrantFiled: September 4, 2012Date of Patent: May 26, 2015Assignee: NATIONAL TSING HUA UNIVERSITYInventors: Fan-Gang Tseng, Yu-Lun Chueh, Chia-Jung Chang, Wen-Chih Chang, Yu-Sheng Huang
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Patent number: 9023663Abstract: The object of the present invention is to provide a method for preparing a nano-sheet array structure of a Group V-VI semiconductor, comprising: (A) providing an electrolyte containing a hydrogen ion and disposing an auxiliary electrode and a working electrode in the electrolyte, wherein the working electrode comprises a Group V-VI semiconductor bulk; and (B) applying a redox reaction bias to the auxiliary electrode and the working electrode to form a nano-sheet array structure on the bulk.Type: GrantFiled: April 30, 2014Date of Patent: May 5, 2015Assignee: National Tsing Hua UniversityInventors: Yu-Lun Chueh, Hung-Wei Tsai, Tsung-Cheng Chan
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Publication number: 20150104566Abstract: A manufacturing method of graphene film includes the steps of: disposing a substrate in a reaction chamber including an inlet and an outlet; providing a metallic catalytic material into the reaction chamber; providing a reducing gas into the reaction chamber; raising the temperature of the reaction chamber to a deposition temperature; providing a carbon-containing gas into the reaction chamber; and generating a plurality of carbon atoms from the carbon-containing gas under the assistance of the metallic catalytic material and the atoms deposited on the substrate to form a graphene film. The manufacturing method of graphene film is capable of depositing a graphene film on the substrate and is advantageous for a transfer-free process in the following application.Type: ApplicationFiled: August 12, 2014Publication date: April 16, 2015Inventors: Wen-Chun YEN, Yu-Lun CHUEH
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Publication number: 20140353541Abstract: A working fluid in cooperation with a solar thermal system comprises a heat conduction medium and a plurality of metal nano-particles mixed in the heat conduction medium. Each of the metal nano-particles includes a metal particle and a protection layer, and the protection layer is an oxide and covers the metal particle. A manufacturing method of metal nano-particles is also disclosed.Type: ApplicationFiled: November 29, 2013Publication date: December 4, 2014Applicant: National Tsing Hua UniversityInventors: Yu-Lun CHUEH, Ming-Chang LU, Chih-Chung LAI, Wen-Chih CHANG, Wen-Liang HU
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Publication number: 20140329338Abstract: The object of the present invention is to provide a method for preparing a nano-sheet array structure of a Group V-VI semiconductor, comprising: (A) providing an electrolyte containing a hydrogen ion and disposing an auxiliary electrode and a working electrode in the electrolyte, wherein the working electrode comprises a Group V-VI semiconductor bulk; and (B) applying a redox reaction bias to the auxiliary electrode and the working electrode to form a nano-sheet array structure on the bulk.Type: ApplicationFiled: April 30, 2014Publication date: November 6, 2014Applicant: National Tsing Hua UniversityInventors: Yu-Lun CHUEH, Hung-Wei TSAI, Tsung-Cheng CHAN
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Publication number: 20140252296Abstract: The present invention relates to a resistive random-access memory, including: a bottom electrode; a resistive switch layer disposed on the bottom electrode, including a first switch layer, a second switch layer, and a filament path control layer, wherein the first switch layer is interposed between the bottom electrode and the filament path control layer, and the filament path control layer is interposed between the first switch layer and the second switch layer; and a top electrode disposed on the second switch layer, wherein the filament path control layer includes one or more micro-pores. The present invention also relates to a memory array which includes a substrate and a plurality of the above-mentioned resistive random access memories, wherein the resistive random access memories are disposed on the substrate.Type: ApplicationFiled: March 5, 2014Publication date: September 11, 2014Applicant: National Tsing Hua UniversityInventors: Yu-Lun CHUEH, Chung-Nan PENG, Wen-Chun YEN
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Patent number: 8815633Abstract: A method of fabricating a 3-dimensional structure on a copper-indium-gallium-diselenide material comprises steps: preparing a CIGS (Copper Indium Gallium Diselenide) substrate, and defining two types of regions complementary to each other on the CIGS substrate; providing a mold absorbing an etching solution that can etch the CIGS substrate instead of the mold; aligning the mold to the two types of regions, and allowing the etching solution to flow out from the mold and contact with the two types of regions to etch the two types of regions for generating a level drop between the two types of regions and forming a 3-dimensional (3D) structure on the CIGS substrate. As a result, the present invention can fabricate a large-area 3D structure on a CIGS substrate rapidly without using expensive equipments or complicated processes.Type: GrantFiled: June 5, 2013Date of Patent: August 26, 2014Assignee: National Tsing Hua UniversityInventors: Yu-Lun Chueh, Hsiang-Ying Cheng, Yi-Chung Wang, Yu-Ting Yen
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Publication number: 20140191183Abstract: A resistive random access memory includes a first electrode, a second electrode and a first metal oxide composite layer. The second electrode is opposite to the first electrode. The first metal oxide composite layer is disposed between the first electrode and the second electrode. The first metal oxide composite layer has a film layer and a nanorod structure.Type: ApplicationFiled: January 8, 2014Publication date: July 10, 2014Applicant: National Tsing Hua UniversityInventors: Yu-Lun CHUEH, Chi-Hsin HUANG
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Publication number: 20140061051Abstract: A filtering film structure includes a film, a conductive layer and a dielectric layer. The film includes a plurality of holes. The conductive layer is disposed on the inner surface of the holes, and the dielectric layer is disposed on the conductive layer. When applying a voltage to the conductive layer, an electrical charge layer forms on the surface of the dielectric layer.Type: ApplicationFiled: September 4, 2012Publication date: March 6, 2014Inventors: Fan-Gang Tseng, Yu-Lun Chueh, Chia-Jung Chang, Wen-Chih Chang, Yu-Sheng Huang
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Patent number: 8664095Abstract: Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (˜4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (˜75°) and for relatively short nanoneedle lengths (˜1 ?m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of ˜1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.Type: GrantFiled: December 21, 2011Date of Patent: March 4, 2014Assignee: The Regents of the University of CaliforniaInventors: Ali Javey, Yu-Lun Chueh, Zhiyong Fan
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Publication number: 20130270121Abstract: The present invention discloses a method for fabricating a copper nanowire with high density twins, which comprises steps: providing a template having a top surface, a bottom surface and a plurality of through-holes penetrating the top surface and the bottom surface and having a diameter of smaller than 55 nm; placing the template in a copper-containing electrolyte at a low temperature lower than ambient temperature and applying a pulse current to perform an electrodeposition process to form a copper nanowire with twin structures in each through-hole. The pulse current increases the probability of stacking faults in the deposited copper ions. The low temperature operation favors formation of nucleation sites of twins. Therefore, the copper nanowire has higher density of twins. Thereby is effectively inhibited electromigration of the copper nanowire.Type: ApplicationFiled: February 27, 2013Publication date: October 17, 2013Applicant: NATIONAL TSING HUA UNIVERSITYInventors: Chien-Neng LIAO, Yu-Lun CHUEH, Tsung-Cheng CHAN, Yen-Miao LIN
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Publication number: 20130273260Abstract: The present invention relates to a method for manufacturing a graphene layer, comprising the following steps: providing a substrate; forming a metal layer on a first side of the substrate; forming a carbon source layer on the metal layer; providing a laser, which irradiates a second side of the substrate and passes through the substrate to form a graphene layer on an interface between the substrate and the metal layer; and providing an organic solvent and an acid solution to remove the carbon source layer and the metal layer respectively.Type: ApplicationFiled: April 11, 2013Publication date: October 17, 2013Inventors: Yu-Lun CHUEH, Ji-Jia DING, Hung-Chiao LIN, Yu-Hsiang HUANG
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Patent number: 8420185Abstract: A method for forming a metal film with twins is disclosed. The method includes: (a) forming a metal film over a substrate, the metal film being made of a material having one of a face-centered cubic crystal structure and a hexagonal close-packed crystal structure; and (b) ion bombarding the metal film at a film temperature lower than ?20° C. in a vacuum chamber and with an ion-bombarding energy sufficient to cause plastic deformation of the metal film to generate deformation twins in the metal film.Type: GrantFiled: July 17, 2012Date of Patent: April 16, 2013Assignee: National Tsing Hua UniversityInventors: Yu-Lun Chueh, Tsung-Cheng Chan, Chien-Neng Liao
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Publication number: 20130089674Abstract: A method for forming a metal film with twins is disclosed. The method includes: (a) forming a metal film over a substrate, the metal film being made of a material having one of a face-centered cubic crystal structure and a hexagonal close-packed crystal structure; and (b) ion bombarding the metal film at a film temperature lower than ?20° C. in a vacuum chamber and with an ion-bombarding energy sufficient to cause plastic deformation of the metal film to generate deformation twins in the metal film.Type: ApplicationFiled: July 17, 2012Publication date: April 11, 2013Inventors: Yu-Lun CHUEH, Tsung-Cheng CHAN, Chien-Neng LIAO
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Publication number: 20130029451Abstract: A method for making a solar cell includes: (a) forming over a substrate a photoelectric transformation layer that is made of a chalcopyrite-based photovoltaic material; (b) performing an ion milling treatment, in which ions are injected to an upper surface of the photoelectric transformation layer at an ion incident angle with respect to the upper surface to partially etch the photoelectric transformation layer, so that the photoelectric transformation layer is formed with a plurality of nano-pillar structures, the ion incident angle ranging from 0° to 90°; and (c) forming an electrode unit to transmit electricity from the photoelectric transformation layer.Type: ApplicationFiled: January 23, 2012Publication date: January 31, 2013Inventors: Yu-Lun Chueh, Chin-Hung Liu, Chih-Huang Lai
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Publication number: 20120161290Abstract: Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (˜4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (˜75°) and for relatively short nanoneedle lengths (˜1 ?m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of ˜1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.Type: ApplicationFiled: December 21, 2011Publication date: June 28, 2012Applicant: The Regents of the University of CaliforniaInventors: Ali Javey, Yu-Lun Chueh, Zhiyong Fan