Abstract: An imaging display device includes an imaging unit, a processing unit, a display unit, and a pupil detection unit. The imaging unit includes a plurality of photoelectric conversion elements and is configured to acquire first image information. The processing unit is configured to process a signal from the imaging unit and generate second image information. The display unit is configured to display an image that is based on the signal from the processing unit. The pupil detection unit is configured to detect vector information of a pupil. The processing unit generates the second image information by processing the first image information based on the vector information on the pupil.

Abstract: An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

Abstract: A photoelectric conversion element includes in a semiconductor layer a first semiconductor region arranged, a second semiconductor region arranged on a second face side closer than the first semiconductor region and forming a p-n junction with the first semiconductor region to form an avalanche photodiode, a light guide structure including a first portion surrounding a first region and a second portion surrounding a second region inside the first region in a plan view, and an optical structure layer disposed on the second face side. The second portion is disposed over a depth of at least 0.8 ?m from the second face, the first and second semiconductor regions are arranged closer to the first face than the second portion, and the second portion overlaps at least a portion of an avalanche multiplication region between the first and second semiconductor region in the plan view.

Abstract: A signal processing device includes a plurality of pixel signal processing units and a signal line group. The plurality of pixel signal processing units is arranged in a first direction and a second direction, each of the plurality of signal processing units acquiring a digital signal having a plurality of bits based on an output from a corresponding avalanche photodiode. The signal line group is arranged corresponding to the plurality of pixel signal processing units arranged in the first direction and including a signal line to which a plurality of signals corresponding to a plurality of bits of different digits of the digital signal held in each of the plurality of pixel signal processing units arranged in the first direction are commonly output.

Abstract: A signal processing device includes a plurality of pixel signal processing units and a signal line group. The plurality of pixel signal processing units is arranged in a first direction and a second direction, each of the plurality of signal processing units acquiring a digital signal having a plurality of bits based on an output from a corresponding avalanche photodiode. The signal line group is arranged corresponding to the plurality of pixel signal processing units arranged in the first direction and including a signal line to which a plurality of signals corresponding to a plurality of bits of different digits of the digital signal held in each of the plurality of pixel signal processing units arranged in the first direction are commonly output.

Abstract: A light-emitting device includes a structure having a first surface and a second surface opposite each other, a light-emitting portion arranged on the first surface, and a protective layer covering the light-emitting portion and the first surface. The structure further includes an electrically conductive member to which one of a signal and a potential for operating the light-emitting portion is given, and an aperture extending from the electrically conductive member to a virtual plane which includes the second surface.

Abstract: An apparatus includes a first substrate having a plurality of avalanche diodes, a second substrate having a plurality of pixel circuits, and a third substrate having a signal processing circuit. The second substrate and the third substrate are stacked in such a manner that a third wiring structure is provided between two semiconductor layers of the second substrate and the third substrate. The apparatus includes first through-hole wiring going through the semiconductor layer of the third substrate.

Abstract: A display element includes a shield line disposed between adjacent ones of signal lines that transmit a digital signal from a latch unit to a plurality of digital-to-analog converters.

Abstract: A photoelectric conversion device includes a plurality of pixels, a data line, and a receiving circuit. Each of plurality of pixels includes a photoelectric conversion unit, a processing circuit, and a pixel output circuit. The photoelectric conversion unit includes an avalanche photodiode that multiplies charge generated by an incident of photon by avalanche multiplication, and outputs a signal in accordance with the incident of photon. The processing circuit processes a signal output from the photoelectric conversion unit. The pixel output circuit controls an output of the signal processed by the processing circuit. The data line is connected to the plurality of pixels. The receiving circuit receives a pixel signal output from the plurality of pixels via the data line. An off-state leakage current of the transistor included in the receiving circuit is smaller than an off-state leakage current of the transistor included in the pixel output circuit.

Abstract: An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

Abstract: An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

Abstract: An image capturing apparatus includes a plurality of photoelectric conversion elements, a first selection unit, and a second selection unit. Each of the photoelectric conversion elements includes an avalanche diode and a counter. The photoelectric conversion elements have a first photoelectric conversion element and a second photoelectric conversion element. The first selection unit controls the first photoelectric conversion element. The second selection unit controls the second photoelectric conversion element. The first and second selection units are controlled by a first control line and a second control line. In a first mode, the second selection unit controls the second photoelectric conversion element to be brought into a state where no signal is read from the second photoelectric conversion element. In a second mode, the second selection unit controls the second photoelectric conversion element to be brought into a state where a signal is read from the second photoelectric conversion element.

Abstract: An imaging display device includes an imaging unit, a processing unit, a display unit, and a pupil detection unit. The imaging unit includes a plurality of photoelectric conversion elements and is configured to acquire first image information. The processing unit is configured to process a signal from the imaging unit and generate second image information. The display unit is configured to display an image that is based on the signal from the processing unit. The pupil detection unit is configured to detect vector information of a pupil. The processing unit generates the second image information by processing the first image information based on the vector information on the pupil.

Abstract: A photoelectric conversion device includes a substrate, a photoelectric conversion unit arranged in the substrate and configured to generate charges corresponding to incident light, and a pixel isolation portion arranged in the substrate and isolating the photoelectric conversion unit from other elements. A sidewall of the pixel isolation portion has a plurality of depressions and protrusions in a cross-sectional view. A period of at least a part of the plurality of depressions and protrusions is greater than ½ of a wavelength of light to which the photoelectric conversion unit has sensitivity.

Abstract: An apparatus includes a plurality, of avalanche diodes disposed in a layer having a first surface and a second surface opposite the first surface, wherein the plurality of avalanche diodes each includes a first region of first conductivity type located at a first depth, a second region of second conductivity type located at a second depth greater than the first depth with respect to the second surface, and a third region of the second conductivity type located at a third depth greater than the second depth with respect to the second surface, wherein the layer includes a plurality of structures disposed in the first surface, and wherein the plurality of structures has an effective period less than hc/Ea(h: Planck's constant [J·s], c: speed of light [m/s], and Ea: a band gap of a substrate [J].

Abstract: An imaging display device includes an imaging unit, a processing unit, a display unit, and a pupil detection unit. The imaging unit includes a plurality of photoelectric conversion elements and is configured to acquire first image information. The processing unit is configured to process a signal from the imaging unit and generate second image information. The display unit is configured to display an image that is based on the signal from the processing unit. The pupil detection unit is configured to detect vector information of a pupil. The processing unit generates the second image information by processing the first image information based on the vector information on the pupil.

Abstract: A photoelectric conversion device includes a plurality of pixels, a data line, and a receiving circuit. Each of plurality of pixels includes a photoelectric conversion unit, a processing circuit, and a pixel output circuit. The photoelectric conversion unit includes an avalanche photodiode that multiplies charge generated by an incident of photon by avalanche multiplication, and outputs a signal in accordance with the incident of photon. The processing circuit processes a signal output from the photoelectric conversion unit. The pixel output circuit controls an output of the signal processed by the processing circuit. The data line is connected to the plurality of pixels. The receiving circuit receives a pixel signal output from the plurality of pixels via the data line. An off-state leakage current of the transistor included in the receiving circuit is smaller than an off-state leakage current of the transistor included in the pixel output circuit.

Abstract: A signal processing device includes a plurality of pixel signal processing units and a signal line group. The plurality of pixel signal processing units is arranged in a first direction and a second direction, each of the plurality of signal processing units acquiring a digital signal having a plurality of bits based on an output from a corresponding avalanche photodiode. The signal line group is arranged corresponding to the plurality of pixel signal processing units arranged in the first direction and including a signal line to which a plurality of signals corresponding to a plurality of bits of different digits of the digital signal held in each of the plurality of pixel signal processing units arranged in the first direction are commonly output.

Abstract: A photoelectric conversion device includes a plurality of pixels arranged in an array to form a plurality of rows and a plurality of columns. Each of the plurality of pixels includes a photon detection element that outputs an output signal generated by avalanche multiplication in accordance with incidence of a photon, a quench element connected to the photon detection element, a waveform shaper that is connected to the photon detection element and generates a detection signal based on the output signal, and a signal processing circuit that performs signal processing on the detection signal output from the waveform shaper. The signal processing circuit includes a counting unit that performs a counting process of counting the detection signal output from the waveform shaper, and a calculation unit that performs a predetermined calculation process on a count result output from the counting unit.

Abstract: At least one solid-state image pickup element includes a plurality of pixels that are arranged in a two-dimensional manner. Each of the plurality of pixels includes a plurality of photoelectric conversion units each including a pixel electrode, a photoelectric conversion layer disposed on the pixel electrode, and a counter electrode disposed such that the photoelectric conversion layer is sandwiched between the pixel electrode and the counter electrode. In one or more embodiments, each of the plurality of pixels also includes a microlens disposed on the plurality of photoelectric conversion units.