Patents by Inventor Yu-Ming Lin

Yu-Ming Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240128178
    Abstract: A method of forming a semiconductor structure is provided, and includes trimming a first substrate to form a recess on a sidewall of the first substrate. A conductive structure is formed in the first substrate. The method includes bonding the first substrate to a carrier. The method includes thinning down the first substrate. The method also includes forming a dielectric material in the recess and over a top surface of the thinned first substrate. The method further includes performing a planarization process to remove the dielectric material and expose the conductive structure over the top surface. In addition, the method includes removing the carrier from the first substrate.
    Type: Application
    Filed: February 8, 2023
    Publication date: April 18, 2024
    Inventors: Yu-Hung LIN, Wei-Ming WANG, Su-Chun YANG, Jih-Churng TWU, Shih-Peng TAI, Kuo-Chung YEE
  • Publication number: 20240128378
    Abstract: A semiconductor device includes a first transistor and a protection structure. The first transistor includes a gate electrode, a gate dielectric disposed on the gate electrode, and a channel layer disposed on the gate dielectric. The protection structure is laterally surrounding the gate electrode, the gate dielectric and the channel layer of the first transistor. The protection structure includes a first capping layer and a dielectric portion. The first capping layer is laterally surrounding and contacting the gate electrode, the gate dielectric and the channel layer of the first transistor. The dielectric portion is disposed on the first capping layer and laterally surrounding the first transistor.
    Type: Application
    Filed: January 30, 2023
    Publication date: April 18, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Cheng Chu, Chien-Hua Huang, Yu-Ming Lin, Chung-Te Lin
  • Patent number: 11961769
    Abstract: A method of forming an integrated circuit, including forming a n-type doped well (N-well) and a p-type doped well (P-well) disposed side by side on a semiconductor substrate, forming a first fin active region extruded from the N-well and a second fin active region extruded from the P-well, forming a first isolation feature inserted between and vertically extending through the N-well and the P-well, and forming a second isolation feature over the N-well and the P-well and laterally contacting the first and the second fin active regions.
    Type: Grant
    Filed: November 7, 2022
    Date of Patent: April 16, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Kuo-Hsiu Hsu, Yu-Kuan Lin, Feng-Ming Chang, Hsin-Wen Su, Lien Jung Hung, Ping-Wei Wang
  • Patent number: 11961878
    Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a deep trench capacitor (DTC) having a portion within the substrate, and an interconnect structure over the DTC and the substrate. The interconnect structure includes a seal ring structure in electrical contact with the substrate, a first conductive via in electrical contact with the DTC, and a first conductive line electrically coupling the seal ring structure to the first conductive via.
    Type: Grant
    Filed: December 13, 2021
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Hsiung Tsai, Shahaji B. More, Yu-Ming Lin, Clement Hsingjen Wann
  • Patent number: 11963363
    Abstract: A memory device including a word line, memory cells, source lines and bit lines is provided. The memory cells are embedded in and penetrate through the word line. The source lines and the bit lines are electrically connected the memory cells. A method for fabricating a memory device is also provided.
    Type: Grant
    Filed: February 1, 2021
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Han-Jong Chia, Meng-Han Lin, Yu-Ming Lin
  • Publication number: 20240120376
    Abstract: Semiconductor structures and methods are provided. A semiconductor structure according to the present disclosure includes a first active region extending lengthwise along a first direction and having a first width along a second direction perpendicular to the first direction, a second active region extending lengthwise along the first direction and having a second width along the second direction, and an epitaxial feature sandwiched between the first active region and the second active region along the first direction. The first width is greater than the second width.
    Type: Application
    Filed: January 26, 2023
    Publication date: April 11, 2024
    Inventors: Po Shao Lin, Jiun-Ming Kuo, Yuan-Ching Peng, You-Ting Lin, Yu Mei Jian
  • Publication number: 20240120157
    Abstract: A keyswitch structure includes a baseplate, a keycap disposed over the baseplate and configured to be movable relative to the baseplate, a membrane switch disposed between the keycap and the baseplate and configured to have one or more buffer portions with two open edges opposite to each other, and a first linking bar connected to the keycap and disposed between the keycap and the membrane switch. The first linking bar has a first long side and a first short side connected to each other. When the keycap moves relative to the baseplate, the one or more buffer portions provide buffer to the first short side and/or an end section of the first long side.
    Type: Application
    Filed: September 25, 2023
    Publication date: April 11, 2024
    Inventors: YU-MING HUANG, CHIN-HUNG LIN
  • Publication number: 20240120388
    Abstract: Provided are structures and methods for forming structures with sloping surfaces of a desired profile. An exemplary method includes performing a first etch process to differentially etch a gate material to a recessed surface, wherein the recessed surface includes a first horn at a first edge, a second horn at a second edge, and a valley located between the first horn and the second horn; depositing an etch-retarding layer over the recessed surface, wherein the etch-retarding layer has a central region over the valley and has edge regions over the horns, and wherein the central region of the etch-retarding layer is thicker than the edge regions of the etch-retarding layer; and performing a second etch process to recess the horns to establish the gate material with a desired profile.
    Type: Application
    Filed: January 18, 2023
    Publication date: April 11, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Li-Wei Yin, Tzu-Wen Pan, Yu-Hsien Lin, Jih-Sheng Yang, Shih-Chieh Chao, Chia Ming Liang, Yih-Ann Lin, Ryan Chia-Jen Chen
  • Publication number: 20240121718
    Abstract: Some of the present implementations provide a method for a user equipment (UE) for receiving a power saving signal. The method receives, from a base station, a power saving signal comprising a minimum applicable K0 (K0min) that indicates a minimum scheduling offset restriction between a physical downlink control channel (PDCCH) and a physical downlink shared channel (PDSCH). The method determines an application delay based on a predefined value. The method then applies the minimum scheduling offset restriction after the application delay.
    Type: Application
    Filed: October 23, 2023
    Publication date: April 11, 2024
    Inventors: Yu-Hsin Cheng, Chie-Ming Chou, Wan-Chen Lin, Tsung-Hua Tsai
  • Patent number: 11956968
    Abstract: Provided are a memory device and a method of forming the same. The memory device includes a first tier on a substrate and a second tier on the first tier. The first tier includes a first layer stack; a first gate electrode penetrating through the first layer stack; a first channel layer between the first layer stack and the first gate electrode; and a first ferroelectric layer between the first channel layer and the first gate electrode. The second tier includes a second layer stack; a second gate electrode penetrating through the second layer stack; a second channel layer between the second layer stack and the second gate electrode; and a second ferroelectric layer between the second channel layer and the second gate electrode.
    Type: Grant
    Filed: August 10, 2022
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chao-I Wu, Yu-Ming Lin, Sai-Hooi Yeong, Han-Jong Chia
  • Publication number: 20240113222
    Abstract: Some embodiments relate to a thin film transistor comprising an active layer over a substrate. An insulator is stacked with the active layer. A gate electrode structure is stacked with the insulator and includes a gate material layer having a first work function and a first interfacial layer. The first interfacial layer is directly between the insulator and the gate material layer, wherein the gate electrode structure has a second work function that is different from the first work function.
    Type: Application
    Filed: January 3, 2023
    Publication date: April 4, 2024
    Inventors: Yan-Yi Chen, Wu-Wei Tsai, Yu-Ming Hsiang, Hai-Ching Chen, Yu-Ming Lin, Chung-Te Lin
  • Publication number: 20240113034
    Abstract: A method for forming a semiconductor package is provided. The method includes forming a first alignment mark in a first substrate of a first wafer and forming a first bonding structure over the first substrate. The method also includes forming a second bonding structure over a second substrate of a second wafer and trimming the second substrate, so that a first width of the first substrate is greater than a second width of the second substrate. The method further includes attaching the second wafer to the first wafer via the first bonding structure and the second bonding structure, thinning the second wafer until a through-substrate via in the second substrate is exposed, and performing a photolithography process on the second wafer using the first alignment mark.
    Type: Application
    Filed: February 8, 2023
    Publication date: April 4, 2024
    Inventors: Yu-Hung LIN, Wei-Ming WANG, Chih-Hao YU, PaoTai HUANG, Pei-Hsuan LO, Shih-Peng TAI
  • Publication number: 20240113221
    Abstract: A fin field effect transistor (FinFET) device structure is provided. The FinFET device structure includes a plurality of fin structures above a substrate, an isolation structure over the substrate and between the fin structures, and a gate structure formed over the fin structure. The FinFET device structure includes a source/drain (S/D) structure over the fin structure, and the S/D structure is adjacent to the gate structure. The FinFET device structure also includes a metal silicide layer over the S/D structure, and the metal silicide layer is in contact with the isolation structure.
    Type: Application
    Filed: November 28, 2023
    Publication date: April 4, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Hsiung TSAI, Shahaji B. MORE, Cheng-Yi PENG, Yu-Ming LIN, Kuo-Feng YU, Ziwei FANG
  • Publication number: 20240113225
    Abstract: A semiconductor device includes a gate, a semiconductor structure, a gate insulating layer, a first source/drain feature and a second source/drain feature. The gate insulating layer is located between the gate and the semiconductor structure. The semiconductor structure includes at least one first metal oxide layer, a first oxide layer, and at least one second metal oxide layer. The first oxide layer is located between the first metal oxide layer and the second metal oxide layer. The first source/drain feature and the second source/drain feature are electrically connected with the semiconductor structure.
    Type: Application
    Filed: January 10, 2023
    Publication date: April 4, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wu-Wei Tsai, Yan-Yi Chen, Hai-Ching Chen, Yu-Ming Lin, Chung-Te Lin
  • Fan
    Patent number: 11946483
    Abstract: A fan is provided herein, including a housing, a hub, and a plurality of blades. The housing includes a top case and a bottom case. The hub is rotatably disposed between the top case and the bottom case in an axial direction. The blades extend from the hub in a radial direction, located between the top case and the bottom case. Each of the blades has a proximal end and a distal end. The proximal end is connected to the hub. The distal end is opposite from the proximal end, located at the other side of the blade, having at least one recessed portion. Each of the recessed portions form a passage for air.
    Type: Grant
    Filed: May 17, 2023
    Date of Patent: April 2, 2024
    Assignee: ACER INCORPORATED
    Inventors: Jau-Han Ke, Tsung-Ting Chen, Chun-Chieh Wang, Yu-Ming Lin, Cheng-Wen Hsieh, Wen-Neng Liao
  • Patent number: 11950428
    Abstract: A memory device includes a first stacking structure, a second stacking structure, a plurality of first isolation structures, gate dielectric layers, channel layers and conductive pillars. The first stacking structure includes a plurality of first gate layers, and a second stacking structure includes a plurality of second gate layers, where the first stacking structure and the second stacking structure are located on a substrate and separated from each other through a trench. The first isolation structures are located in the trench, where a plurality of cell regions are respectively confined between two adjacent first isolation structures of the first isolation structures in the trench, where the first isolation structures each includes a first main layer and a first liner surrounding the first main layer, where the first liner separates the first main layer from the first stacking structure and the second stacking structure.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Chen Wang, Meng-Han Lin, Sai-Hooi Yeong, Yu-Ming Lin, Han-Jong Chia
  • Patent number: 11950427
    Abstract: A memory cell includes a transistor over a semiconductor substrate. The transistor includes a ferroelectric layer arranged along a sidewall of a word line. The ferroelectric layer includes a species with valence of 5, valence of 7, or a combination thereof. An oxide semiconductor layer is electrically coupled to a source line and a bit line. The ferroelectric layer is disposed between the oxide semiconductor layer and the word line.
    Type: Grant
    Filed: July 21, 2022
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Chieh Lu, Sai-Hooi Yeong, Bo-Feng Young, Yu-Ming Lin, Chih-Yu Chang
  • Publication number: 20240102194
    Abstract: A plating system and a method thereof are disclosed. The plating system performs a N-stage plating drilling filling process in which a M-th stage plating drilling filling process with a M-th current density is performed on a hole of a substrate for a M-th plating time to form a M-th plating layer on the to-be-plated layer, wherein N is a positive integer equal to or greater than 3, and M is a positive integer positive integer in a range of 1 to N. Therefore, the technical effect of providing a higher drilling filling rate than conventional plating filling technology under a condition that a total thickness of plating layers is fixed can be achieved.
    Type: Application
    Filed: August 7, 2023
    Publication date: March 28, 2024
    Inventors: Cheng-EN HO, Yu-Lian CHEN, Cheng-Chi WANG, Yu-Jen CHANG, Yung-Sheng LU, Cheng-Yu LEE, Yu-Ming LIN
  • Publication number: 20240105879
    Abstract: A light-emitting diode and a manufacturing method thereof are provided. The manufacturing method includes following steps. First, an LED wafer is provided. The LED wafer includes a substrate and a light-emitting semiconductor stacking structure positioned on the surface of the substrate. The light-emitting semiconductor stacking structure includes a first type semiconductor layer, an active layer, and a second type semiconductor layer from a side of the substrate. Second, dicing lanes are defined on the upper surface of the LED wafer. Third, dicing is performed along the dicing lanes of the substrate using a laser. The laser is focused on the lower surface of the substrate to form a surface hole and focused inside the substrate to form an internal hole. The diameter of the surface hole is greater than the diameter of the internal hole. Fourth, the LED wafer is separated into LED chips along the dicing lanes.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 28, 2024
    Applicant: Quanzhou sanan semiconductor technology Co., Ltd.
    Inventors: TSUNG-MING LIN, CHUNG-YING CHANG, YI-JUI HUANG, YU-TSAI TENG
  • Patent number: 11943933
    Abstract: A memory device includes metal interconnect structures embedded within dielectric material layers that overlie a top surface of a substrate, a thin film transistor embedded in a first dielectric material layer selected from the dielectric material layers, and is vertically spaced from the top surface of the substrate, and a ferroelectric memory cell embedded within the dielectric material layers. A first node of the ferroelectric memory cell is electrically connected to a node of the thin film transistor through a subset of the metal interconnect structures that is located above, and vertically spaced from, the top surface of the substrate.
    Type: Grant
    Filed: January 17, 2023
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Bo-Feng Young, Mauricio Manfrini, Sai-Hooi Yeong, Han-Jong Chia, Yu-Ming Lin