Abstract: The present application discloses a method for manufacturing shallow trench isolation, comprising: step 1: performing first time etching on a semiconductor substrate by means of a dry etching process to form the shallow trench, wherein in the first time etching, metal ions are released from a dry etching process chamber and deposited on the inner surface of the shallow trench, and the metal ions diffuse and form a contamination layer; and step 2: performing second time etching on the semiconductor substrate exposed on the inner surface of the shallow trench by means of a wet etching process to remove the contamination layer on the inner surface of the shallow trench. In the present application, the metal ions released from the dry etching process chamber and deposited on the inner surface of the shallow trench during the dry etching of the shallow trench can be removed.

Abstract: A beam-slab integrated prefabricated waffle slab structure and a construction method thereof are provided, the structure includes columns, arranged in an array, and a beam and slab support element and a beam support element being disposed on each column; two ends of each prefabricated frame beam being respectively disposed on the beam support elements, a main support element being disposed on front and rear sidewalls of each prefabricated frame beam; prefabricated waffle beam-slab units, each disposed between the prefabricated frame beams.

Abstract: A reinforced concrete composite beam structure based on precast concrete beam-slab integrated units include rib beams and rebar cages; stirrups in the rib beams are closed stirrups; upper parts of the closed stirrups in each rib beam are extended from the rib beam and taken as connecting rings; the rebar cages are disposed on upper parts of two connected rib beams; the connecting rings are lapped with beam surface closed stirrups to form the reinforced concrete composite beam structure with the rib beams after casting concrete. Its construction method includes: installing the precast concrete beam-slab integrated units; hoisting the rebar cages on the rib beams to tie two corresponding connecting rings with the corresponding beam surface closed stirrup in a staggered and overlapped manner; and casting concrete to submerge the rebar cages. A form of the closed stirrups is proposed when rib width of the rib beams is small.

Abstract: The present application relates to a wafer transfer module in a semiconductor manufacturing machine, relating to semiconductor integrated circuit manufacturing machines, wherein two sets of transmitter/receivers are provide on sidewalls of the wafer transfer module to monitor the travel position of an elevator, two sets of transmitter/receivers are provide on the sidewalls of the wafer transfer module to monitor the position of a transfer arm, a signal received by the receiver is transmitted to a control system such that the control system determines, according to the travel position of the elevator and the transfer arm position, whether the transfer arm can obtain a to-be-transferred wafer, thereby preventing the problem of a wafer scratch caused by an elevator position deviation or a transfer arm position deviation.

Abstract: The present application discloses a preventive maintenance method for a chamber of a metal etching machine. An optimized burning cleaning recipe is added before the chamber is opened, and metal substances remaining on the surface of an electrostatic chuck are removed by adopting a cleaning/pumping down multi-step alternate method. Before the chamber is opened for preventive maintenance, the phenomenon of metal particles remaining on the surface of the electrostatic chuck can be significantly improved, thus solving the downtime problem caused by abnormal backside helium and ensuring the stability of mass production.

Abstract: The present application discloses a preventive maintenance method for a chamber of a metal etching machine. An optimized burning cleaning recipe is added before the chamber is opened, and metal substances remaining on the surface of an electrostatic chuck are removed by adopting a cleaning/pumping down multi-step alternate method. Before the chamber is opened for preventive maintenance, the phenomenon of metal particles remaining on the surface of the electrostatic chuck can be significantly improved, thus solving the downtime problem caused by abnormal backside helium and ensuring the stability of mass production.

Abstract: A face recognition monitoring system based on spectrum and multi-band fusion, including a spectrum camera, a first module for acquiring a face spectral image, a second module for preprocessing data of the face spectral image, a face spectral image database and a third module for recognizing the face spectral image. The spectrum camera includes an optical lens and a silicon-based detector. The silicon-based detector includes a photoelectric conversion substrate and a filter film arranged thereon. The filter film includes N units each including a visible spectrum sensing area, a near-infrared spectral image sensing area and a RGGB image acquisition area. The N units cover all pixels on the photoelectric conversion substrate. A recognition method using the above system is also provided.

Abstract: The present application discloses a method for manufacturing shallow trench isolation, comprising: step 1: performing first time etching on a semiconductor substrate by means of a dry etching process to form the shallow trench, wherein in the first time etching, metal ions are released from a dry etching process chamber and deposited on the inner surface of the shallow trench, and the metal ions diffuse and form a contamination layer; and step 2: performing second time etching on the semiconductor substrate exposed on the inner surface of the shallow trench by means of a wet etching process to remove the contamination layer on the inner surface of the shallow trench. In the present application, the metal ions released from the dry etching process chamber and deposited on the inner surface of the shallow trench during the dry etching of the shallow trench can be removed.

Abstract: The present application discloses a vacuum pumping valve for semiconductor equipment and a vacuum control system, wherein the vacuum pumping valve includes a driving device, a base, a rotary disk, and a set of blades, wherein the blades are mounted between the base and the rotary disk, the rotary disk driven by the driving device drives the blades to move synchronously on the base, the moving blades together form a pumping orifice, the shape of the pumping orifice is a regular polygon coaxial with the rotary disk, and the opening of the pumping orifice is adjustable by means of synchronous movement of the blades. In the present application, the effective passage area of the gas flow and vacuum pressure of the reaction chamber can be controlled, and the problem of an asymmetric gas plasma distribution can be effectively resolved.

Abstract: The present application relates to a wafer transfer module in a semiconductor manufacturing machine, relating to semiconductor integrated circuit manufacturing machines, wherein two sets of transmitter/receivers are provide on sidewalls of the wafer transfer module to monitor the travel position of an elevator, two sets of transmitter/receivers are provide on the sidewalls of the wafer transfer module to monitor the position of a transfer arm, a signal received by the receiver is transmitted to a control system such that the control system determines, according to the travel position of the elevator and the transfer arm position, whether the transfer arm can obtain a to-be-transferred wafer, thereby preventing the problem of a wafer scratch caused by an elevator position deviation or a transfer arm position deviation.

Abstract: A face recognition monitoring system based on spectrum and multi-band fusion, including a spectrum camera, a first module for acquiring a face spectral image, a second module for preprocessing data of the face spectral image, a face spectral image database and a third module for recognizing the face spectral image. The spectrum camera includes an optical lens and a silicon-based detector. The silicon-based detector includes a photoelectric conversion substrate and a filter film arranged thereon. The filter film includes N units each including a visible spectrum sensing area, a near-infrared spectral image sensing area and a RGGB image acquisition area. The N units cover all pixels on the photoelectric conversion substrate. A recognition method using the above system is also provided.

Abstract: A fingerprint identification system for a mobile phone and an identification method. The system includes a fingerprint collection module, a spectral chip, a data storage module and an identification module. The fingerprint collection module is arranged under a mobile phone screen. The mobile phone screen provides a light source to illuminate a fingerprint. The spectral chip is configured to modulate an incident spectrum, and convert an optical signal into an electrical signal to be amplified and converted into a digital signal or code for output. A finger reflection spectral data and a fingerprint image data are collected by inversion of an optical signal intensity information and a pixel location information. The data storage module is configured to store reflection spectral data and fingerprint image data of a real finger input in advance. The identification module is configured to compare the collected data with the pre-stored data.

Abstract: This invention relates to a polycarbonate composition, comprising a polycarbonate, an impact-resistant modifier, a functional acrylic polymer and a preferred filler. In another aspect, this invention relates to a molded article prepared from said polycarbonate composition, wherein said article possesses a good apparent property and a good impact-resistant property.

Abstract: The present disclosure provides an electrically controllable optical device and a method for operating the same. The electrically controllable optical device comprises a multi-stable liquid crystal layer and a controller, wherein the electrically controllable optical device is switchable between a transparent state and a non-transparent state. The method for operating the electrically controllable optical device comprises applying a voltage to the multi-stable liquid crystal layer, controlling at least one of the amplitude, frequency and number of pulses of the voltage to switch the electrically controllable optical device between a transparent state and a non-transparent state, and removing the voltage.

Abstract: Compositions containing a polycarbonate and a linear and cyclic phenyl containing siloxanes are disclosed. Specifically, a composition comprising: (a) a branched polycarbonate resin, (b) a flame retardant, (c) at least one linear phenyl containing siloxane and at least one cyclic phenyl containing siloxane, and (d) a linear polycarbonate resin when said branched polycarbonate is less than 100% based upon weight percent of total polycarbonate in said composition, wherein the amounts of said branched and linear polycarbonate resins, said linear siloxanes and cyclic siloxanes, and flame retardant are in amounts effective to provide a molded article from said composition with a UL94 V0 p(FTP) value of 0.90 or greater at a thickness of between 1 mm and 2.5 mm or at 2.5 mm or at 1.5 mm or at 1 mm is disclosed.

Abstract: The invention disclosed a method for forming high aspect ratio patterning structure. Firstly, forming a dielectric film ashing stop layer, a first photoresist layer, a first hard mask layer and a second photoresist layer on a semiconductor substrate in turn. A second hard mask layer having a high etch selectivity ratio with the first photoresist layer is formed on top surface and sidewall of the pattern by utilizing a low temperature chemical vapor deposition process, which can be a protect for the pattern sidewall during the later etching process of the first photoresist layer. So, the cone-shaped or the bowling-shaped photoresist morphology caused by plasma bombardment can be avoided. Therefore, the problems of the insufficient of selectivity ratio, burrs at the edge of the pattern and larger critical dimension can be solved, and the implanted ions can be well distributed according to the design of the device.

Abstract: The invention disclosed a method for forming high aspect ratio patterning structure. Firstly, forming a dielectric film ashing stop layer, a first photoresist layer, a first hard mask layer and a second photoresist layer on a semiconductor substrate in turn. A second hard mask layer having a high etch selectivity ratio with the first photoresist layer is formed on top surface and sidewall of the pattern by utilizing a low temperature chemical vapor deposition process, which can be a protect for the pattern sidewall during the later etching process of the first photoresist layer. So, the cone-shaped or the bowling-shaped photoresist morphology caused by plasma bombardment can be avoided. Therefore, the problems of the insufficient of selectivity ratio, burrs at the edge of the pattern and larger critical dimension can be solved, and the implanted ions can be well distributed according to the design of the device.

Abstract: A bipolar battery, a manufacturing method thereof and a vehicle comprising the bipolar battery. The bipolar battery comprises a case comprising a first half case and a second half case; at least one bipolar plate with periphery sealed and sandwiched between the first half case and the second half case; and at least two electrical cores located at opposite two sides of the bipolar plate, respectively. With using the case made of flexible packaging material and sealing the peripheries of the bipolar plate collector and the case by sticking, it is easy to assemble and maintain the bipolar battery.

Abstract: The invention disclosed a method for forming shallow trenches of the dual active regions. Firstly, forming an etch stop layer on a semiconductor substrate; secondly, using a first accurate photomask to expose and develop the semiconductor substrate, until the etch stop layer has been exposed on the top of the first shallow trench regions and the second shallow trench regions; thirdly, etching the etch stop layer entirely in the exposed regions; fourthly, using a second photomask to expose and develop the first shallow trench regions which require a deeper etch depth of the trench than that of the second shallow trench regions; fifthly, etching and forming preliminary entirely depth in the first shallow trench regions, and then removing the second photomask; at last, taking the etch stop layer as a mask, and simultaneously etching the first shallow trench regions and the second shallow trench regions to form the first hallow trenches and the second shallow trenches having different depths.

Abstract: The invention disclosed a method for forming shallow trenches of the dual active regions. Firstly, forming an etch stop layer on a semiconductor substrate; secondly, using a first accurate photomask to expose and develop the semiconductor substrate, until the etch stop layer has been exposed on the top of the first shallow trench regions and the second shallow trench regions; thirdly, etching the etch stop layer entirely in the exposed regions; fourthly, using a second photomask to expose and develop the first shallow trench regions which require a deeper etch depth of the trench than that of the second shallow trench regions; fifthly, etching and forming preliminary entirely depth in the first shallow trench regions, and then removing the second photomask; at last, taking the etch stop layer as a mask, and simultaneously etching the first shallow trench regions and the second shallow trench regions to form the first hallow trenches and the second shallow trenches having different depths.