Abstract: The present invention relates to a silicone pressure sensitive adhesive composition comprising a boron-containing additive containing a boron-containing compound selected from the group consisting of a boroxine-based compound and a borane-based compound containing a covalent boron-nitrogen bond. The present invention also relates to an article such as a pressure sensitive adhesive tape comprising the silicone pressure sensitive adhesive composition.

Abstract: The present disclosure provides a method for processing defect information of a product, which includes the following steps of: acquiring defect information on a current film layer and defect information on historical film layers; determining whether defect information exists at a target location of the historical film layer if defect information exists at a target location of the current film layer; if defect information exists for a corresponding location to the target location in at least one of the historical film layers, deleting the defect information detected at the target location in the current film layer; and if no defect information exists for the target location in any of the historical film layers, retaining the defect information detected at the target location in the current film layer.

Abstract: In some examples, a controller of a wearable device causes display by the wearable device of a test image, and adjusts a color property of the displayed test image. In response to an input provided by a user responsive to the displayed test image as the color property is adjusted, the controller determines a distribution of color wavelengths for an eye of the user, and detects a color vision deficiency of the user based on the determined distribution of color wavelengths. The controller provides control information to control a display device of the wearable device to compensate for the color vision deficiency.

Abstract: In an embodiment, a device includes: a first source/drain region; a second source/drain region; an inter-layer dielectric (ILD) layer over the first source/drain region and the second source/drain region; a first source/drain contact extending through the ILD layer, the first source/drain contact connected to the first source/drain region; a second source/drain contact extending through the ILD layer, the second source/drain contact connected to the second source/drain region; and an isolation feature between the first source/drain contact and the second source/drain contact, the isolation feature including a dielectric liner and a void, the dielectric liner surrounding the void.

Abstract: A method may include forming a mask layer on top of a first dielectric layer formed on a first source/drain and a second source/drain, and creating an opening in the mask layer and the first dielectric layer that exposes portions of the first source/drain and the second source/drain. The method may include filling the opening with a metal layer that covers the exposed portions of the first source/drain and the second source/drain, and forming a gap in the metal layer to create a first metal contact and a second metal contact. The first metal contact may electrically couple to the first source/drain and the second metal contact may electrically couple to the second source/drain. The gap may separate the first metal contact from the second metal contact by less than nineteen nanometers.

Abstract: A high-frequency composite impactor including a high-frequency axial and a torsional impact assembly is disclosed. The high-frequency axial impact assembly includes an upper self-excited oscillation cavity, a lower self-excited oscillation cavity, an adjustment block and a lock nut. The torsional impact assembly includes an upper end cover, a reversing switch, a pendulum, a lower shell, a lower end cover, a nozzle, a connecting block and a retaining ring. The high-frequency axial impact assembly converts the flowing drilling fluid into a pulsed jet to achieve a high-frequency axial impact. The torsional impact assembly enables a torsional impact through a shunt, and finally enables a high-frequency composite impact, which can effectively reduce the stick-slip of the drill string, jump drilling and other downhole accidents. By reducing the friction between the drill string and the borehole wall, the impactor can reduce WOB loss, increase the ROP, and improve the drilling efficiency.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a base station may detect interference, in a remote interference management (RIM) scenario, in a set of sub-bands of a plurality of sub-bands of a bandwidth portion. The base station may transmit, to identify the set of sub-bands in which interference is detected, a set of reference signals configured to indicate the set of sub-bands in which the interference is detected. Numerous other aspects are provided.

Abstract: An approach for managing data set access based on data set relevance. The approach monitors data set access activities associated with a user. The approach detects access of a first data set by the user. The approach determines a group of data sets associated with the first data set based on a data set mapping associated with the user. The approach recalls one or more data sets of the group of data sets from a slower storage device to a faster storage device.

Abstract: A voltage controlled oscillator (VCO), including: at least one second upper voltage rail; at least one second lower voltage rail; a ring of N cascaded inverters, wherein the set of N cascaded inverters are coupled between the at least one second upper voltage rail and the at least one second lower voltage rail; at least one first frequency band select circuit coupled between first upper voltage rail and the at least one second upper voltage rail; at least one second frequency band select circuit coupled between the at least one second lower voltage rail and first lower voltage rail; at least one first VCO frequency control circuit coupled between the first upper voltage rail and the at least one second upper voltage rail; and at least one second VCO frequency control circuit coupled between the at least one second lower voltage rail and the first lower voltage rail.

Abstract: A test device includes a power compensation module and a test module. The power compensation module receives AC power generated by a device under test to generate DC power to the device under test. The test module provides a plurality of test signals and a test mode to the device under test for testing the device under test.

Abstract: The invention provides a suspension modifier directly added into fracturing fluid for real-time proppant modification during fracturing and the application thereof, relating to the field of oil and gas production technologies. The suspension modifier is a controlled release nanoemulsion and comprises surface hydrophobic modifier, surfactant, cosurfactant and water. The suspension modifier is directly added into clear-water or active-water fracturing fluid while the proppant is added into water. After stirring, the suspension modifier is capable of self-assembling and being adsorbed on the proppant surface, so that the proppant surface becomes hydrophobic and aerophilic. The invention no longer requires the proppant to be pretreated, and the bubble-suspended proppant can be obtained directly by adding the suspension modifier to the clear-water or active-water fracturing fluid, and meanwhile adding the proppant to the fracturing fluid.

Abstract: The present application discloses a preventive maintenance method for a chamber of a metal etching machine. An optimized burning cleaning recipe is added before the chamber is opened, and metal substances remaining on the surface of an electrostatic chuck are removed by adopting a cleaning/pumping down multi-step alternate method. Before the chamber is opened for preventive maintenance, the phenomenon of metal particles remaining on the surface of the electrostatic chuck can be significantly improved, thus solving the downtime problem caused by abnormal backside helium and ensuring the stability of mass production.

Abstract: A method of forming a semiconductor device includes: forming a gate structure over a fin that protrudes above a substrate; forming source/drain regions over the fin on opposing sides of the gate structure; forming a first dielectric layer and a second dielectric layer successively over the source/drain regions; performing a first etching process to form an opening in the first dielectric layer and in the second dielectric layer, where the opening exposes an underlying electrically conductive feature; after performing the first etching process, performing a second etching process to enlarge a lower portion of the opening proximate to the substrate; and forming a contact plug in the opening after the second etching process.

Abstract: A light-emitting diode includes a semiconductor epitaxy stack, a reflection layer, a first pad electrode, and a second pad electrode. The semiconductor epitaxy stack has a first surface and a second surface opposite to the first surface. The first surface has an electrode region and a light exit region. The semiconductor epitaxy stack includes a first type semiconductor layer, an active layer and a second type semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The reflection layer is disposed on the second surface opposite to the first surface. The first pad electrode is disposed on the electrode region and is electrically connected to the first type semiconductor layer. The second pad electrode is disposed on the electrode region and is electrically connected to the second type semiconductor layer.

Abstract: A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a gate electrode on the p-type semiconductor layer, and then forming a source electrode and a drain electrode adjacent to two sides of the gate electrode. Preferably, the buffer layer further includes a bottom portion having a first carbon concentration and a top portion having a second carbon concentration, in which the second carbon concentration is less than the first carbon concentration and a thickness of the bottom portion is less than a thickness of the top portion.

Abstract: A light-emitting device includes a semiconductor epitaxial structure that has a first surface and a second surface, and that includes a first semiconductor layer, an active layer, and a second semiconductor layer. The active layer includes a quantum well structure having multiple periodic units, each including a well layer and a barrier layer greater in bandgap than the well layer. The bandgap of the barrier layer of at least one of the periodic units proximate to the first surface is smaller than that proximate to the second surface, and a thickness of the well layer of at least one of the periodic units proximate to the first surface is greater than that proximate to the second surface. In some embodiments, a bandgap of a second spacing layer disposed between the active and second semiconductor layers increases in a direction from the first surface to the second surface.

Abstract: A method of forming a semiconductor device. A substrate having a fin structure is provided. A dummy gate is formed on the fin structure. A polymer block is formed adjacent to a corner between the dummy gate and the fin structure. The polymer block is subjected to a nitrogen plasma treatment, thereby forming a nitridation layer in proximity to a sidewall of the dummy gate under the polymer block. After subjecting the polymer block to the nitrogen plasma treatment, a seal layer is formed on the sidewall of the dummy gate and on the polymer block. An epitaxial layer is then grown on a source/drain region of the fin structure. The dummy gate is then replaced with a metal gate.

Abstract: The present disclosure provides systems, apparatus, methods, and computer-readable media that support multi-frame depth-of-field (MF-DOF) for deblurring background regions of interest (ROIs), such as background faces, that may be blurred due to a large aperture size or other characteristics of the camera used to capture the image frame. The processing may include the use of two image frames obtained at two different focus points corresponding to the multiple ROIs in the image frame. The corrected image frame may be determined by deblurring one or more ROIs of the first image frame using an AI-based model and/or local gradient information. The MF-DOF may allow selectively increasing a depth-of-field (DOF) of an image to provide focused capture of multiple regions of interest, without causing a reduction in aperture (and subsequently an amount of light available for photography) or background blur that may be desired for photography.

Abstract: A light-emitting device includes: a semiconductor epitaxial stack that has a first surface and a second surface, and includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on one another in a direction from the second surface to the first surface; a light-transmissive dielectric layer that is disposed on the second surface and that has through holes; an ohmic contact layer that is formed in the through holes and that is in contact with the first semiconductor layer; an adhesion layer that is disposed on the light-transmissive dielectric layer opposite to the semiconductor epitaxial stack; a metal reflection layer that is disposed on the adhesion layer opposite to the semiconductor epitaxial stack; and a diffusion barrier layer that is disposed between the ohmic contact layer and the adhesion layer. A light-emitting apparatus and a method for manufacturing the light-emitting device are also provided.

Abstract: A designing method of a gear skiving cutter that includes: constructing a cutter manufacturing tool with a plurality of asymmetrical tooth structures and a base material for the gear skiving cutter; simulating relative movements of the cutter manufacturing tool and the base material based on multi-axes in a relative motion coordinate system to have the cutter manufacturing tool process the surface of the base material; and forming a plurality of cut teeth on the base material by the plurality of tooth structures of the cutter manufacturing tool. An outer contour of each cut tooth is designed in advance so that gear teeth on a gear workpiece with a planned grinding allowance can be formed when the gear workpiece is processed by the gear skiving cutter. The grinding allowance on either side of each gear tooth can be kept uniform, and the grinding allowance on both sides of each gear tooth can be closely the same.