Abstract: Systems with a contouring method are provided for contouring one or more targets that correspond to specific organs and/or tumors in a three-dimensional medical image of a patient using neural networks. The contouring system includes a storage unit, a processing unit, and a plurality of modules that are computer operable. The processing unit is used to obtain the image, and then to generate one or more contouring images using a contouring method. The contouring method includes enhancing image features and improving contouring accuracy using an image preprocessing module, and extracting a plurality of multi-scale image representations and expanding these representations to one or more contouring images using a neural network-based contouring module.

Abstract: A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than ?/2n1, and the second transparent dielectric layer has a thickness of m?/4n2, wherein m is an odd number, ? is an emission wavelength of the light-emitting layer, n1 is a refractive index of the first transparent dielectric layer, and n2 is a refractive index of the second transparent dielectric layer and is greater than n1.

Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.

Abstract: A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.

Abstract: A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.

Abstract: A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive:the suppressor additive:the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.

Abstract: A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive: the suppressor additive: the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.

Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.

Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.

Abstract: A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.

Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.

Abstract: A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 ?m, and the thickness of the lower semiconductor stack is small than or equal to 1 ?m.

Abstract: A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive: the suppressor additive: the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.

Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.

Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength ? nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.

Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength ? nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.

Abstract: A light-emitting device comprises a carrier; a first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is, the first semiconductor structure comprises a first active layer emitting a first light having a first dominant wavelength during a normal operation, and the second semiconductor structure comprises a second active layer; and a bridge on a side surface of the second active layer of the second semiconductor structure.

Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength ? nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt.

Abstract: A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.

Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength ? nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt.