Patents by Inventor Yu-Ren Peng

Yu-Ren Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210081594
    Abstract: A method for fabricating an integrated circuit is provided. The method includes: receiving a cell schematic of a unit cell of the integrated circuit; when an intrinsic gain of a transistor of the unit cell falls outside a predetermined range of gain values, revising a set of parameter values for a set of size parameters of the unit cell in the cell schematic, wherein the intrinsic gain of the transistor of the unit cell characterized by the revised set of parameter values falls within the predetermined range of gain values; generating a cell layout of the unit cell according to the cell schematic indicating the revised set of parameter values for the set of size parameters; and fabricating the integrated circuit according to the cell layout of the unit cell.
    Type: Application
    Filed: November 24, 2020
    Publication date: March 18, 2021
    Inventors: YUNG-HSU CHUANG, WEN-SHEN CHOU, JIE-REN HUANG, YU-TAO YANG, YUNG-CHOW PENG, YUN-RU CHEN
  • Publication number: 20210081510
    Abstract: Systems, methods, and devices are disclosed herein for developing a cell design. Operations of a plurality of electrical cells are simulated to collect a plurality of electrical parameters. A machine learning model is trained using the plurality of electrical parameters. The trained machine learning model receives data having cell layout design constraints. The trained machine learning model determines a cell layout for the received data based on the plurality of electrical parameters. The cell layout is provided for further characterization of electrical performance within the cell layout design constraints.
    Type: Application
    Filed: September 17, 2019
    Publication date: March 18, 2021
    Inventors: Wen-Shen Chou, Jie-Ren Huang, Yu-Tao Yang, Yung-Chow Peng, Yung-Hsu Chuang
  • Patent number: 10879629
    Abstract: A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive:the suppressor additive:the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Jun-Nan Nian, Jyun-Ru Wu, Shiu-Ko Jangjian, Yu-Ren Peng, Chi-Cheng Hung, Yu-Sheng Wang
  • Publication number: 20200394279
    Abstract: A method for fabricating a semiconductor structure is provided. The method includes assigning a set of parameter values to a set of size parameters of a unit cell of the integrated circuit in a unit cell schematic of the unit cell according to a predetermined criterion, wherein the unit cell characterized by the set of parameter values has a circuit characteristic meeting the predetermined criterion; generating a unit cell layout of the unit cell according to the unit cell schematic; generating a circuit layout comprising a plurality of replicas of the unit cell layout, the replicas of the unit cell layout being arranged in correspondence with circuit blocks in a circuit floorplan of the integrated circuit, respectively; and fabricating the integrated circuit according to the circuit layout.
    Type: Application
    Filed: June 17, 2019
    Publication date: December 17, 2020
    Inventors: YUNG-HSU CHUANG, WEN-SHEN CHOU, JIE-REN HUANG, YU-TAO YANG, YUNG-CHOW PENG, YUN-RU CHEN
  • Patent number: 10860777
    Abstract: A method for fabricating a semiconductor structure is provided. The method includes assigning a set of parameter values to a set of size parameters of a unit cell of the integrated circuit in a unit cell schematic of the unit cell according to a predetermined criterion, wherein the unit cell characterized by the set of parameter values has a circuit characteristic meeting the predetermined criterion; generating a unit cell layout of the unit cell according to the unit cell schematic; generating a circuit layout comprising a plurality of replicas of the unit cell layout, the replicas of the unit cell layout being arranged in correspondence with circuit blocks in a circuit floorplan of the integrated circuit, respectively; and fabricating the integrated circuit according to the circuit layout.
    Type: Grant
    Filed: June 17, 2019
    Date of Patent: December 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Yung-Hsu Chuang, Wen-Shen Chou, Jie-Ren Huang, Yu-Tao Yang, Yung-Chow Peng, Yun-Ru Chen
  • Patent number: 10749278
    Abstract: A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive: the suppressor additive: the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.
    Type: Grant
    Filed: April 18, 2016
    Date of Patent: August 18, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jun-Nan Nian, Jyun-Ru Wu, Shiu-Ko Jangjian, Yu-Ren Peng, Chi-Cheng Hung, Yu-Sheng Wang
  • Patent number: 10693039
    Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: June 23, 2020
    Assignee: Epistar Corporation
    Inventors: Wen-Luh Liao, Shao-Ping Lu, Hung-Ta Cheng, Shih-I Chen, Chia-Liang Hsu, Shou-Chin Wei, Ching-Pei Lin, Yu-Ren Peng, Chien-Fu Huang, Wei-Yu Chen, Chun-Hsien Chang
  • Publication number: 20200173051
    Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.
    Type: Application
    Filed: November 7, 2019
    Publication date: June 4, 2020
    Inventors: Jun-Nan Nian, Shiu-Ko JANGJIAN, Ting-Chun WANG, Ing-Ju LEE, Yu-Ren PENG, Yao-Hsiang LIANG
  • Publication number: 20200176310
    Abstract: A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.
    Type: Application
    Filed: November 27, 2019
    Publication date: June 4, 2020
    Inventors: Jun-Nan Nian, Shiu-Ko JANGJIAN, Yu-Ren PENG, Yao-Hsiang LIANG, Ting-Chun WANG
  • Patent number: 10600938
    Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: March 24, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chih-Chiang Lu, Yi-Chieh Lin, Rong-Ren Lee, Yu-Ren Peng, Ming-Siang Huang, Ming-Ta Chin, Yi-Ching Lee
  • Patent number: 10367118
    Abstract: A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 ?m, and the thickness of the lower semiconductor stack is small than or equal to 1 ?m.
    Type: Grant
    Filed: September 15, 2016
    Date of Patent: July 30, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Yu-Ren Peng, Tzu-Chieh Hsu, Shih-I Chen, Rong-Ren Lee, Hsin-Chan Chung, Wen-Luh Liao, Yi-Chieh Lin
  • Publication number: 20190109389
    Abstract: A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive: the suppressor additive: the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.
    Type: Application
    Filed: November 30, 2018
    Publication date: April 11, 2019
    Inventors: Jun-Nan NIAN, Jyun-Ru Wu, Shiu-Ko Jangjian, Yu-Ren Peng, Chi-Cheng Hung, Yu-Sheng Wang
  • Publication number: 20180269358
    Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.
    Type: Application
    Filed: May 18, 2018
    Publication date: September 20, 2018
    Inventors: Chih-Chiang LU, Yi-Chieh LIN, Rong-Ren LEE, Yu-Ren PENG, Ming-Siang HUANG, Ming-Ta CHIN, Yi-Ching LEE
  • Patent number: 10008636
    Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength ? nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: June 26, 2018
    Assignee: EPISTAR CORPORATION
    Inventors: Chih-Chiang Lu, Yi-Chieh Lin, Rong-Ren Lee, Yu-Ren Peng, Ming-Siang Huang, Ming-Ta Chin, Yi-Ching Lee
  • Publication number: 20180069157
    Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength ? nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.
    Type: Application
    Filed: October 27, 2017
    Publication date: March 8, 2018
    Inventors: Chih-Chiang LU, Yi-Chieh LIN, Rong-Ren LEE, Yu-Ren PENG, Ming-Siang HUANG, Ming-Ta CHIN, Yi-Ching LEE
  • Publication number: 20180012929
    Abstract: A light-emitting device comprises a carrier; a first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is, the first semiconductor structure comprises a first active layer emitting a first light having a first dominant wavelength during a normal operation, and the second semiconductor structure comprises a second active layer; and a bridge on a side surface of the second active layer of the second semiconductor structure.
    Type: Application
    Filed: September 21, 2017
    Publication date: January 11, 2018
    Inventors: Shao-Ping LU, Yi-Ming CHEN, Yu-Ren PENG, Chun-Yu LIN, Chun-Fu TSAI, Tzu-Chieh HSU
  • Patent number: 9859470
    Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength ? nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: January 2, 2018
    Assignee: EPISTAR CORPORATION
    Inventors: Chih-Chiang Lu, Yi-Chieh Lin, Rong-Ren Lee, Yu-Ren Peng, Ming-Siang Huang, Ming-Ta Chin, Yi-Ching Lee
  • Patent number: 9825088
    Abstract: A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: November 21, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Shao-Ping Lu, Yi-Ming Chen, Yu-Ren Peng, Chun-Yu Lin, Chun-Fu Tsai, Tzu-Chieh Hsu
  • Publication number: 20170263820
    Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength ? nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt.
    Type: Application
    Filed: March 10, 2016
    Publication date: September 14, 2017
    Inventors: Chih-Chiang LU, Yi-Chieh LIN, Rong-Ren LEE, Yu-Ren PENG, Ming-Siang HUANG, Ming-Ta CHIN, Yi-Ching LEE
  • Publication number: 20170256678
    Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.
    Type: Application
    Filed: May 23, 2017
    Publication date: September 7, 2017
    Inventors: Wen-Luh LIAO, Shao-Ping LU, Hung-Ta CHENG, Shih-I CHEN, Chia-Liang HSU, Shou-Chin WEI, Ching-Pei LIN, Yu-Ren PENG, Chien-Fu HUANG, Wei-Yu CHEN, Chun-Hsien CHANG