Patents by Inventor Yu-Ren Peng

Yu-Ren Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220148711
    Abstract: Systems with a contouring method are provided for contouring one or more targets that correspond to specific organs and/or tumors in a three-dimensional medical image of a patient using neural networks. The contouring system includes a storage unit, a processing unit, and a plurality of modules that are computer operable. The processing unit is used to obtain the image, and then to generate one or more contouring images using a contouring method. The contouring method includes enhancing image features and improving contouring accuracy using an image preprocessing module, and extracting a plurality of multi-scale image representations and expanding these representations to one or more contouring images using a neural network-based contouring module.
    Type: Application
    Filed: June 29, 2021
    Publication date: May 12, 2022
    Inventors: Kuei-Hong KUO, Yi-Ting PENG, Ching-Chung KAO, Ai-Ling HSU, Yu-Ren YANG, Pei-Wei SHUENG, Chun-You CHEN, Kuan-Chieh HUANG
  • Publication number: 20220140203
    Abstract: A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than ?/2n1, and the second transparent dielectric layer has a thickness of m?/4n2, wherein m is an odd number, ? is an emission wavelength of the light-emitting layer, n1 is a refractive index of the first transparent dielectric layer, and n2 is a refractive index of the second transparent dielectric layer and is greater than n1.
    Type: Application
    Filed: January 7, 2022
    Publication date: May 5, 2022
    Applicant: Tianjin Sanan Optoelectronics Co., Ltd.
    Inventors: Weiping XIONG, Xin WANG, Zhiwei WU, Di GAO, Yu-Ren PENG, Huan-shao KUO
  • Publication number: 20220042197
    Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.
    Type: Application
    Filed: October 21, 2021
    Publication date: February 10, 2022
    Inventors: Jun-Nan Nian, Shiu-Ko JANGJIAN, Ting-Chun WANG, Ing-Ju LEE, Yu-Ren PENG, Yao-Hsiang LIANG
  • Publication number: 20210238765
    Abstract: A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.
    Type: Application
    Filed: April 22, 2021
    Publication date: August 5, 2021
    Inventors: Jun-Nan NIAN, Shiu-Ko JANGJIAN, Yu-Ren PENG, Yao-Hsiang LIANG, Ting-Chun WANG
  • Patent number: 11015260
    Abstract: A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.
    Type: Grant
    Filed: November 27, 2019
    Date of Patent: May 25, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jun-Nan Nian, Shiu-Ko Jangjian, Yu-Ren Peng, Yao-Hsiang Liang, Ting-Chun Wang
  • Patent number: 10879629
    Abstract: A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive:the suppressor additive:the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Jun-Nan Nian, Jyun-Ru Wu, Shiu-Ko Jangjian, Yu-Ren Peng, Chi-Cheng Hung, Yu-Sheng Wang
  • Patent number: 10749278
    Abstract: A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive: the suppressor additive: the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.
    Type: Grant
    Filed: April 18, 2016
    Date of Patent: August 18, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jun-Nan Nian, Jyun-Ru Wu, Shiu-Ko Jangjian, Yu-Ren Peng, Chi-Cheng Hung, Yu-Sheng Wang
  • Patent number: 10693039
    Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.
    Type: Grant
    Filed: May 23, 2017
    Date of Patent: June 23, 2020
    Assignee: Epistar Corporation
    Inventors: Wen-Luh Liao, Shao-Ping Lu, Hung-Ta Cheng, Shih-I Chen, Chia-Liang Hsu, Shou-Chin Wei, Ching-Pei Lin, Yu-Ren Peng, Chien-Fu Huang, Wei-Yu Chen, Chun-Hsien Chang
  • Publication number: 20200173051
    Abstract: An electrochemical plating (ECP) system is provided. The ECP system includes an ECP cell comprising a plating solution for an ECP process, a sensor configured to in situ measure an interface resistance between a plated metal and an electrolyte in the plating solution as the ECP process continues, a plating solution supply system in fluid communication with the ECP cell and configured to supply the plating solution to the ECP cell, and a control system operably coupled to the ECP cell, the sensor and the plating solution supply system. The control system is configured to compare the interface resistance with a threshold resistance and to adjust a composition of the plating solution in response to the interface resistance being below the threshold resistance.
    Type: Application
    Filed: November 7, 2019
    Publication date: June 4, 2020
    Inventors: Jun-Nan Nian, Shiu-Ko JANGJIAN, Ting-Chun WANG, Ing-Ju LEE, Yu-Ren PENG, Yao-Hsiang LIANG
  • Publication number: 20200176310
    Abstract: A method for performing an electrochemical plating (ECP) process includes contacting a surface of a substrate with a plating solution comprising ions of a metal to be deposited, electroplating the metal on the surface of the substrate, in situ monitoring a plating current flowing through the plating solution between an anode and the substrate immersed in the plating solution as the ECP process continues, and adjusting a composition of the plating solution in response to the plating current being below a critical plating current such that voids formed in a subset of conductive lines having a highest line-end density among a plurality of conductive lines for a metallization layer over the substrate are prevented.
    Type: Application
    Filed: November 27, 2019
    Publication date: June 4, 2020
    Inventors: Jun-Nan Nian, Shiu-Ko JANGJIAN, Yu-Ren PENG, Yao-Hsiang LIANG, Ting-Chun WANG
  • Patent number: 10600938
    Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: March 24, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Chih-Chiang Lu, Yi-Chieh Lin, Rong-Ren Lee, Yu-Ren Peng, Ming-Siang Huang, Ming-Ta Chin, Yi-Ching Lee
  • Patent number: 10367118
    Abstract: A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 ?m, and the thickness of the lower semiconductor stack is small than or equal to 1 ?m.
    Type: Grant
    Filed: September 15, 2016
    Date of Patent: July 30, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Yu-Ren Peng, Tzu-Chieh Hsu, Shih-I Chen, Rong-Ren Lee, Hsin-Chan Chung, Wen-Luh Liao, Yi-Chieh Lin
  • Publication number: 20190109389
    Abstract: A method of electroplating a metal into a recessed feature is provided, which includes: contacting a surface of the recessed feature with an electroplating solution comprising metal ions, an accelerator additive, a suppressor additive and a leveler additive, in which the recessed feature has at least two elongated regions and a cross region laterally between the two elongated regions, and a molar concentration ratio of the accelerator additive: the suppressor additive: the leveler additive is (8-15):(1.5-3):(0.5-2); and electroplating the metal to form an electroplating layer in the recessed feature. An electroplating layer in a recessed feature is also provided.
    Type: Application
    Filed: November 30, 2018
    Publication date: April 11, 2019
    Inventors: Jun-Nan NIAN, Jyun-Ru Wu, Shiu-Ko Jangjian, Yu-Ren Peng, Chi-Cheng Hung, Yu-Sheng Wang
  • Publication number: 20180269358
    Abstract: A light-emitting device includes: a light-emitting stack including a first active layer emitting a first light having a first peak wavelength; a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; and a tunneling junction between the diode and the light-emitting stack, wherein the tunneling junction includes a first tunneling layer and a second tunneling layer on the first tunneling layer, the first tunneling layer has a band gap and a thickness of the first tunneling layer is greater than a thickness of the second tunneling layer.
    Type: Application
    Filed: May 18, 2018
    Publication date: September 20, 2018
    Inventors: Chih-Chiang LU, Yi-Chieh LIN, Rong-Ren LEE, Yu-Ren PENG, Ming-Siang HUANG, Ming-Ta CHIN, Yi-Ching LEE
  • Patent number: 10008636
    Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength ? nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.
    Type: Grant
    Filed: October 27, 2017
    Date of Patent: June 26, 2018
    Assignee: EPISTAR CORPORATION
    Inventors: Chih-Chiang Lu, Yi-Chieh Lin, Rong-Ren Lee, Yu-Ren Peng, Ming-Siang Huang, Ming-Ta Chin, Yi-Ching Lee
  • Publication number: 20180069157
    Abstract: A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength ? nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a second peak wavelength between 800 nm and 1900 nm; wherein a forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt, and a ratio of the intensity of the first light emitted from the active layer at the first peak wavelength to the intensity of the second light emitted from the diode at the second peak wavelength is greater than 10 and not greater than 1000.
    Type: Application
    Filed: October 27, 2017
    Publication date: March 8, 2018
    Inventors: Chih-Chiang LU, Yi-Chieh LIN, Rong-Ren LEE, Yu-Ren PENG, Ming-Siang HUANG, Ming-Ta CHIN, Yi-Ching LEE
  • Publication number: 20180012929
    Abstract: A light-emitting device comprises a carrier; a first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is, the first semiconductor structure comprises a first active layer emitting a first light having a first dominant wavelength during a normal operation, and the second semiconductor structure comprises a second active layer; and a bridge on a side surface of the second active layer of the second semiconductor structure.
    Type: Application
    Filed: September 21, 2017
    Publication date: January 11, 2018
    Inventors: Shao-Ping LU, Yi-Ming CHEN, Yu-Ren PENG, Chun-Yu LIN, Chun-Fu TSAI, Tzu-Chieh HSU
  • Patent number: 9859470
    Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength ? nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt.
    Type: Grant
    Filed: March 10, 2016
    Date of Patent: January 2, 2018
    Assignee: EPISTAR CORPORATION
    Inventors: Chih-Chiang Lu, Yi-Chieh Lin, Rong-Ren Lee, Yu-Ren Peng, Ming-Siang Huang, Ming-Ta Chin, Yi-Ching Lee
  • Patent number: 9825088
    Abstract: A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: November 21, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Shao-Ping Lu, Yi-Ming Chen, Yu-Ren Peng, Chun-Yu Lin, Chun-Fu Tsai, Tzu-Chieh Hsu
  • Publication number: 20170263820
    Abstract: A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength ? nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward voltage of the light-emitting device is between (1240/0.8?) volt and (1240/0.5?) volt.
    Type: Application
    Filed: March 10, 2016
    Publication date: September 14, 2017
    Inventors: Chih-Chiang LU, Yi-Chieh LIN, Rong-Ren LEE, Yu-Ren PENG, Ming-Siang HUANG, Ming-Ta CHIN, Yi-Ching LEE