Abstract: The present invention provides a method for manufacturing a display panel, comprising the following steps: (A) providing a carrier with a separation layer formed thereon; (B) laminating a glass substrate on the hydrophobic surface of the separation layer to make the separation layer between the carrier and the glass substrate; (C) forming a display unit on the glass substrate; and (D) separating the glass substrate from the carrier and the separation layer to obtain a display panel; wherein the separation layer has a hydrophobic surface with a water contacting angle in a range from 25° to 180°.

Abstract: A semiconductor process includes the following steps. A substrate is provided. A dielectric layer having a high dielectric constant is formed on the substrate, wherein the steps of forming the dielectric layer include: (a) a metallic oxide layer is formed; (b) an annealing process is performed to the metallic oxide layer; and the steps (a) and (b) are performed repeatedly. Otherwise, the present invention further provides a semiconductor structure formed by said semiconductor process.

Abstract: A method of forming a film is provided. The method includes at least the following steps. A first substrate and a second substrate are provided in a batch processing system, wherein a first surface of the first substrate is adjacent to a second surface of the second substrate, the first surface of the first substrate has a first surface condition, the second surface of the second substrate has a second surface condition, and the first surface condition is different from the second surface condition. A pretreatment gas is provided to the surfaces of the substrates for transforming the first surface condition and the second surface condition to a third surface condition. A reaction gas is provided to form the film on the surfaces, having the third surface condition, of the substrates.

Abstract: A method for manufacturing a semiconductor structure includes the following steps. First, a semiconductor substrate is provided and a patterned pad layer is formed on the semiconductor substrate so as to expose a portion of the semiconductor substrate. Then, the semiconductor substrate exposed from the patterned pad layer is etched away to form a trench inside the semiconductor substrate. A selectively-grown material layer is selectively formed on the surface of the trench, followed by filling a dielectric precursor material into the trench. Finally, a transformation process is carried out to concurrently transform the dielectric precursor material into a dielectric material and transform the selectively-grown material layer into an oxygen-containing amorphous material layer.

Abstract: A semiconductor structure includes a dielectric layer located on a substrate, wherein the dielectric layer includes nitrogen atoms, and the concentration of the nitrogen atoms in the dielectric layer is lower than 5% at a location wherein the distance between this location in the dielectric layer to the substrate is less than 20% of the thickness of the dielectric layer. Moreover, the present invention provides a semiconductor process including the following steps: a dielectric layer is formed on a substrate. Two annealing processes are performed in-situly on the dielectric layer, wherein the two annealing processes have different imported gases and different annealing temperatures.

Abstract: A process for fabricating a semiconductor device is described. A silicon oxide layer is formed. A nitridation process including at least two steps is performed to nitridate the silicon oxide layer into a silicon oxynitride (SiON) layer. The nitridation process comprises a first nitridation step and a second nitridation step in sequence, wherein the first nitridation step and the second nitridation step are different in the setting of at least one parameter.

Abstract: A semiconductor process includes the following steps. A gate structure is formed on a substrate. An oxide layer is formed and covers the gate structure and the substrate. A plasma process without oxygen is performed to densify the oxide layer. A material layer is formed and covers the oxide layer. The material layer and the oxide layer are etched to form a dual spacer.

Abstract: The present invention provides a method of forming an isolation structure. A substrate is provided, and a trench is formed in the substrate. Next, a semiconductor layer is formed on a surface of the trench. A nitridation is carried out to form a nitridation layer in the semiconductor layer. Lastly, an insulation layer is filled into the trench.

Abstract: A method for forming a gate structure includes the following steps. A substrate is provided. A silicon oxide layer is formed on the substrate. A decoupled plasma-nitridation process is applied to the silicon oxide layer so as to form a silicon oxynitride layer. A first polysilicon layer is formed on the silicon oxynitride layer. A thermal process is applied to the silicon oxynitride layer having the first polysilicon layer. After the thermal process, a second polysilicon layer is formed on the first polysilicon layer. The first polysilicon layer can protect the gate dielectric layer during the thermal process. The nitrogen atoms inside the gate dielectric layer do not lose out of the gate dielectric layer. Thus, the out-gassing phenomenon can be avoided, and a dielectric constant of the gate dielectric layer can not be changed, thereby increasing the reliability of the gate structure.

Abstract: A semiconductor process includes the following steps. A gate structure is formed on a substrate. An oxide layer is formed and covers the gate structure and the substrate. A plasma process without oxygen is performed to densify the oxide layer. A material layer is formed and covers the oxide layer. The material layer and the oxide layer are etched to form a dual spacer.

Abstract: A manufacturing method for a semiconductor device having a metal gate includes providing a substrate having at least a first semiconductor device formed thereon, forming a first gate trench in the first semiconductor device, forming a first work function metal layer in the first gate trench, and performing a decoupled plasma oxidation to the first work function metal layer.

Abstract: A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function corresponding to the conductivity type in the gate trench, and performing an ion implantation to adjust the intrinsic work function of the work function metal layer to a target work function.

Abstract: A method for fabricating silicon dioxide layer is disclosed. The method includes the following steps. Firstly, a semiconductor substrate is provided. Next, the semiconductor substrate is cleaned with a solution containing hydrogen peroxide to form a chemical oxide layer on the semiconductor substrate. Then, the chemical oxide layer is heated in no oxygen atmosphere, such that the chemical oxide layer forms a compact layer. Then, the semiconductor substrate is heated in oxygen atmosphere to form a silicon dioxide layer between the semiconductor substrate and the compact layer.

Abstract: A gate structure and a method for fabricating the same are described. A substrate is provided, and a gate dielectric layer is formed on the substrate. The formation of the gate dielectric layer includes depositing a silicon nitride layer on the substrate by simultaneously introducing a nitrogen-containing gas and a silicon-containing gas. A gate is formed on the gate dielectric layer, so as to form the gate structure.

Abstract: A semiconductor process includes the following steps. A substrate having a recess is provided. A decoupled plasma nitridation process is performed to nitride the surface of the recess for forming a nitrogen containing liner on the surface of the recess. A nitrogen containing annealing process is then performed on the nitrogen containing liner.

Abstract: A method of fabricating an epitaxial layer includes providing a substrate. The substrate is etched to form at least a recess within the substrate. A surface treatment is performed on the recess to form a Si—OH containing surface. An in-situ epitaxial process is performed to form an epitaxial layer within the recess, wherein the epitaxial process is performed in a hydrogen-free atmosphere and at a temperature lower than 800° C.

Abstract: A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate and an oxide layer is formed on the substrate without the fin-shaped structure forming thereon. A thermal treatment process is performed to form a melting layer on at least a part of the sidewall of the fin-shaped structure.

Abstract: A semiconductor process includes the following steps. A substrate is provided. A dielectric layer having a high dielectric constant is formed on the substrate, wherein the steps of forming the dielectric layer include: (a) a metallic oxide layer is formed; (b) an annealing process is performed to the metallic oxide layer; and the steps (a) and (b) are performed repeatedly. Otherwise, the present invention further provides a semiconductor structure formed by said semiconductor process.

Abstract: A semiconductor structure includes a substrate, an oxide layer, a metallic oxynitride layer and a metallic oxide layer. The oxide layer is located on the substrate. The metallic oxynitride layer is located on the oxide layer. The metallic oxide layer is located on the metallic oxynitride layer. In addition, the present invention also provides a semiconductor process for forming the semiconductor structure.

Abstract: A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate and an oxide layer is formed on the substrate without the fin-shaped structure forming thereon. A thermal treatment process is performed to form a melting layer on at least a part of the sidewall of the fin-shaped structure.