Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a semiconductor die, a molding compound, a polymer layer, a conductive trace, a conductive via and an inductor. The semiconductor die is laterally surrounded by the molding compound. The polymer layer covers the semiconductor die and the molding compound. The conductive trace, the conductive via and the inductor are embedded in the polymer layer. The conductive via extends from a top surface of the conductive trace to a top surface of the polymer layer. The inductor has a body portion extending horizontally and a protruding portion protruded from the body portion. A total height of the body and protruding portions is substantially equal to a sum of a thickness of the conductive trace and a height of the conductive via. The height of the body portion is greater than the thickness of the conductive trace.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a semiconductor die, a molding compound, a polymer layer, a conductive trace, a conductive via and an inductor. The semiconductor die is laterally surrounded by the molding compound. The polymer layer covers the semiconductor die and the molding compound. The conductive trace, the conductive via and the inductor are embedded in the polymer layer. The conductive via extends from a top surface of the conductive trace to a top surface of the polymer layer. The inductor has a body portion extending horizontally and a protruding portion protruded from the body portion. A total height of the body and protruding portions is substantially equal to a sum of a thickness of the conductive trace and a height of the conductive via. The height of the body portion is greater than the thickness of the conductive trace.

Abstract: A semiconductor package includes a semiconductor chip and a redistribution layer structure. The redistribution layer structure is arranged to form an antenna transmitter structure and an antenna receiver structure over the semiconductor chip, wherein patterns of the antenna receiver structure are located at different levels of the redistribution layer structure, and at least one pattern of the antenna transmitter structure is at the same level of the topmost patterns of the antenna receiver structure.

Abstract: Sensor packages and manufacturing methods thereof are disclosed. One of the sensor packages includes a semiconductor chip and a redistribution layer structure. The semiconductor chip has a sensing surface. The redistribution layer structure is arranged to form an antenna transmitter structure aside the semiconductor chip and an antenna receiver structure over the sensing surface of the semiconductor chip.

Abstract: Provided are a package structure and a method of manufacturing the same. The method includes the following processes. A die is provided. An encapsulant is formed laterally aside the die. A first dielectric layer is formed on the encapsulant and the die. A first redistribution layer is formed to penetrate through the first dielectric layer to connect to the die, the first redistribution layer includes a first via embedded in the first dielectric layer and a first trace on the first dielectric layer and connected to the first via. The first via and the first trace of the first redistribution layer are formed separately.

Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.

Abstract: Provided is a package structure includes a die having a first connector, a RDL structure disposed on the die, and a second connector. The RDL structure includes at least one elongated via located on and connected to the first connector. The second connector is disposed on and connected to the RDL structure.

Abstract: An optical package is provided. The optical package includes an interference splitter allowing a light having a predetermined wavelength range to transmit through, a sensing element, and a light-transmitting structure. The light-transmitting structure includes a light-transmitting pillar and a light-absorbing layer surrounding the light-transmitting pillar, and the light-absorbing layer absorbs the light having the predetermined wavelength range. The interference splitter, the light-transmitting pillar, and the sensing element are arranged aligned with each other along an extending direction of the light-transmitting pillar. The sensing element is configured to receive the light transmitting through the interference splitter and the light-transmitting pillar.

Abstract: Sensor packages and manufacturing methods thereof are disclosed. One of the sensor packages includes a semiconductor chip and a redistribution layer structure. The semiconductor chip has a sensing surface. The redistribution layer structure is arranged to form an antenna transmitter structure aside the semiconductor chip and an antenna receiver structure over the sensing surface of the semiconductor chip.

Abstract: Provided is a package structure includes a die having a first connector, a RDL structure disposed on the die, and a second connector. The RDL structure includes at least one elongated via located on and connected to the first connector. The second connector is disposed on and connected to the RDL structure.

Abstract: The present disclosure provides a semiconductor structure includes a sensing element configured to receive a signal from a sensing target, a molding surrounding the sensing element, a through via in the molding, a front side redistribution layer disposed at a front side of the sensing element and electrically connected thereto, and a back side redistribution layer disposed at a back side of the sensing element, the front side redistribution layer and the back side redistribution layer are electrically connected by the through via. The present disclosure also provides a method for manufacturing the semiconductor structure described herein.

Abstract: Sensor packages and manufacturing methods thereof are disclosed. One of the sensor packages includes a semiconductor chip and a redistribution layer structure. The semiconductor chip has a sensing surface. The redistribution layer structure is arranged to form an antenna transmitter structure aside the semiconductor chip and an antenna receiver structure over the sensing surface of the semiconductor chip.

Abstract: The present disclosure provides a semiconductor structure includes a sensing element configured to receive a signal from a sensing target, a molding surrounding the sensing element, a through via in the molding, a front side redistribution layer disposed at a front side of the sensing element and electrically connected thereto, and a back side redistribution layer disposed at a back side of the sensing element, the front side redistribution layer and the back side redistribution layer are electrically connected by the through via. The present disclosure also provides a method for manufacturing the semiconductor structure described herein.

Abstract: An optical package is provided. The optical package includes an interference splitter allowing a light having a predetermined wavelength range to transmit through, a sensing element, and a light-transmitting structure. The light-transmitting structure includes a light-transmitting pillar and a light-absorbing layer surrounding the light-transmitting pillar, and the light-absorbing layer absorbs the light having the predetermined wavelength range. The interference splitter, the light-transmitting pillar, and the sensing element are arranged aligned with each other along an extending direction of the light-transmitting pillar. The sensing element is configured to receive the light transmitting through the interference splitter and the light-transmitting pillar.

Abstract: Sensor packages and manufacturing methods thereof are disclosed. One of the sensor packages includes a semiconductor chip and a redistribution layer structure. The semiconductor chip has a sensing surface. The redistribution layer structure is arranged to form an antenna transmitter structure aside the semiconductor chip and an antenna receiver structure over the sensing surface of the semiconductor chip.

Abstract: A tunable optical device including a substrate, at least one support unit, a flexible frame, an elastic component, a first reflector, and at least one actuator is provided. The support unit is fixed onto the substrate. The flexible frame is connected to the support unit and suspended above the substrate. The elastic component is connected to the flexible frame. A stiffness of the elastic component in the Z-axis is smaller than a stiffness of the flexible frame in the Z-axis. The Z-axis direction is parallel to a normal direction of the substrate. The first reflector is connected to the elastic component. The actuator is located between the flexible frame and the substrate or located between the first reflector and the substrate.

Abstract: A pressure sensor and a manufacturing method of the same are provided. The pressure sensor includes a substrate, a dielectric oxide layer, a first electrode, a dielectric connection layer, and a second electrode. The dielectric oxide layer is formed on the substrate. The first electrode is formed on the dielectric oxide layer. The dielectric connection layer is formed on the first electrode. The second electrode is formed on the dielectric connection layer. The second electrode comprises a patterned conductive layer and a dielectric layer. The patterned conductive layer has a plurality of holes, and the dielectric layer is formed on the patterned conductive layer and covers the inner walls of the plurality of holes. The first electrode, the dielectric connection layer, and the second electrode define a first chamber between the first electrode and the second electrode.

Abstract: A pressure sensor and a manufacturing method of the same are provided. The pressure sensor includes a substrate, a dielectric oxide layer, a first electrode, a dielectric connection layer, and a second electrode. The dielectric oxide layer is formed on the substrate. The first electrode is formed on the dielectric oxide layer. The dielectric connection layer is formed on the first electrode. The second electrode is formed on the dielectric connection layer. The second electrode comprises a patterned conductive layer and a dielectric layer. The patterned conductive layer has a plurality of holes, and the dielectric layer is formed on the patterned conductive layer and covers the inner walls of the plurality of holes. The first electrode, the dielectric connection layer, and the second electrode define a first chamber between the first electrode and the second electrode.

Abstract: A gas sensor manufacturing method comprises the following steps: providing a SOI substrate, including an oxide layer, a device layer, and a carrier, wherein the oxide layer is disposed between the device layer and the carrier; etching the device layer to form an integrated circuit region, an outer region, a trench and at least one conducting line; coating or imprinted a sensing material on the integrated circuit region; and etching the carrier and the oxide layer to form a cavity up to the gap so as to form a film structure which is suspended in the cavity by the cantilevered connecting arm.

Abstract: A capacitive transducer and fabrication method are disclosed. The capacitive transducer includes a substrate, a first electrode mounted on the substrate, a cap having a through-hole and a cavity beside the through-hole, a second electrode mounted on the cap across the through-hole. The second electrode is deformable in response to pressure fluctuations applied thereto via the through-hole and defines, together with the first electrode, as a capacitor. The capacitor includes a capacitance variable with the pressure fluctuations and the cavity defines a back chamber for the deformable second electrode.