Abstract: A gas sensor manufacturing method including the following steps: providing a SOI substrate, including an oxide layer, a device layer, and a carrier, wherein the oxide layer is disposed between the device layer and the carrier; etching the device layer to form an integrated circuit region, an outer region, a trench and a conducting line, the conducting line including a connecting arm connecting to the integrated circuit region, the trench is formed around the conducting line and excavated to the oxide layer for reducing power consumption of the heater circuit, the connecting arm reaches over a gap between the integrated circuit region and the outer region and electrically connects to the integrated circuit region; coating or imprinting a sensing material on the circuit region; and etching the carrier and the oxide layer to form a cavity to form a film structure suspended in the cavity by the cantilevered connecting arm.

Abstract: A gas sensor manufacturing method including the following steps: providing a SOI substrate, including an oxide layer, a device layer, and a carrier, wherein the oxide layer is disposed between the device layer and the carrier; etching the device layer to form an integrated circuit region, an outer region, a trench and a conducting line, the conducting line including a connecting arm connecting to the integrated circuit region, the trench is formed around the conducting line and excavated to the oxide layer for reducing power consumption of the heater circuit, the connecting arm reaches over a gap between the integrated circuit region and the outer region and electrically connects to the integrated circuit region; coating or imprinting a sensing material on the circuit region; and etching the carrier and the oxide layer to form a cavity to form a film structure suspended in the cavity by the cantilevered connecting arm.

Abstract: A capacitive transducer and fabrication method are disclosed. The capacitive transducer includes a substrate, a first electrode mounted on the substrate, a cap having a through-hole and a cavity beside the through-hole, a second electrode mounted on the cap across the through-hole. The second electrode is deformable in response to pressure fluctuations applied thereto via the through-hole and defines, together with the first electrode, as a capacitor. The capacitor includes a capacitance variable with the pressure fluctuations and the cavity defines a back chamber for the deformable second electrode.

Abstract: An acoustic wave sensing device integrated with micro-channels and a method for the same are described. The present invention uses a piezoelectric substrate with a thinner portion serving as a sensing area and formed via a micromaching or chemical process. An inter-digital transducer (IDT) is located on the thinner portion to produce flexural plate waves (FPW). The micro-channels can be formed together with the thinner portion via the same manufacturing process, or integrated into the piezoelectric substrate via linkage. In the present invention, a novel manufacturing process and design are proposed for fabrication of the acoustic wave sensing devices with a good piezoelectric characteristic, a stable temperature compensation property, and a robust structure. Thereby, the techniques of flexural plate waves can be applied for liquid sensors. In this way, the drawbacks of the conventional acoustic wave sensing devices, such as poor piezoelectric properties and fragile film structures, are removed.

Abstract: A packaging structure for integration of microelectronics and MEMS devices by 3D stacking is disclosed, which comprises: an ASIC unit, comprising a first substrate and a circuit layout formed on a surface of the first substrate, wherein a cavity is formed on the other surface and at least a through hole is formed on the ASIC unit; and a MEMS unit, comprising a second substrate and a micro sensor disposed on the second substrate; wherein the micro sensor is disposed in the cavity and there is a conductive material filling the through hole so that the ASIC unit and the MEMS unit can be electrically connected to each other when the ASIC unit is attached onto the MEMS unit.

Abstract: An acoustic wave sensing device integrated with micro-channels and a method for the same are described. The present invention uses a piezoelectric substrate with a thinner portion serving as a sensing area and formed via a micromaching or chemical process. An inter-digital transducer (IDT) is located on the thinner portion to produce flexural plate waves (FPW). The micro-channels can be formed together with the thinner portion via the same manufacturing process, or integrated into the piezoelectric substrate via linkage. In the present invention, a novel manufacturing process and design are proposed for fabrication of the acoustic wave sensing devices with a good piezoelectric characteristic, a stable temperature compensation property, and a robust structure. Thereby, the techniques of flexural plate waves can be applied for liquid sensors. In this way, the drawbacks of the conventional acoustic wave sensing devices, such as poor piezoelectric properties and fragile film structures, are removed.

Abstract: A method for manufacturing chemical sensors is provided for the process of the wafer level chemical sensor. The method is to form a frame around a certain area on the chemical sensor for locating sensing material, and then to fill the Sol-Gel sensing material into the frame. Besides, the present invention further provides a method for dividing the chemical sensor chips employed in such wafer level chemical sensor. The character of such method is to stick an adhesion object such as blue tape on the backside of the substrate, and then to cut in advance a scribe line around the rim of the chemical sensor before filling the sensing material into the sensor. Finally, the plurality of the chemical sensors will be divided into individual ones after the process of calcining or furnacing.