Abstract: An apparatus can include memory devices and a memory controller coupled to the memory devices via memory channels. The memory channels can disable a first memory channel associated with a first memory die in a respective memory chip of a memory device and perform a memory operation via a second memory channel involving a second memory die in the respective memory chip.

Abstract: An apparatus can include memory devices and a memory controller coupled to the memory devices via memory channels. The memory channels can disable a first memory channel associated with a first memory die in a respective memory chip of a memory device and perform a memory operation via a second memory channel involving a second memory die in the respective memory chip.

Abstract: Systems, apparatuses, and methods related to a controller architecture for read data alignment are described. An example method can include sending a first notification from a physical layer to each of a number of memory controllers, wherein the first notification indicates that the physical layer and/or a memory device coupled to the physical layer is busy, and blocking commands on each of the number of memory controllers in response to receiving the first notification to cause read data alignment. The method can also include sending a second notification from the physical layer to each of the number of memory controllers, wherein the second notification indicates that the physical layer and/or the memory device coupled to the physical layer is no longer busy, and resuming processing commands on each of the number of memory controllers in response to receiving the second notification.

Abstract: Described apparatuses and methods relate to self-refresh arbitration. In a memory system with multiple memory components, an arbiter is configured to manage the occurrence of self-refresh operations. In aspects, the arbiter can receive one or more self-refresh request signals from at least one memory controller for authorization to command one or more memory components to enter a self-refresh mode. Upon receiving the one or more self-refresh request signals, the arbiter, based on a predetermined configuration, can transmit one or more self-refresh enable signals to the at least one memory controller with authorization to command the one or more memory components to enter the self-refresh mode. The configuration can ensure that fewer than all memory components simultaneously enter the self-refresh mode. In so doing, memory components can perform self-refresh operations without exceeding an instantaneous power threshold. The arbiter can be included in, for instance, a Compute Express Link™ (CXL™) memory module.

Abstract: Systems, apparatuses, and methods related to a controller architecture for read data alignment are described. An example method can include sending a first notification from a physical layer to each of a number of memory controllers, wherein the first notification indicates that the physical layer and/or a memory device coupled to the physical layer is busy, and blocking commands on each of the number of memory controllers in response to receiving the first notification to cause read data alignment. The method can also include sending a second notification from the physical layer to each of the number of memory controllers, wherein the second notification indicates that the physical layer and/or the memory device coupled to the physical layer is no longer busy, and resuming processing commands on each of the number of memory controllers in response to receiving the second notification.

Abstract: Systems, apparatuses, and methods related to a controller architecture for read data alignment are described. An example method can include sending a first notification from a physical layer to each of a number of memory controllers, wherein the first notification indicates that the physical layer and/or a memory device coupled to the physical layer is busy, and blocking commands on each of the number of memory controllers in response to receiving the first notification to cause read data alignment. The method can also include sending a second notification from the physical layer to each of the number of memory controllers, wherein the second notification indicates that the physical layer and/or the memory device coupled to the physical layer is no longer busy, and resuming processing commands on each of the number of memory controllers in response to receiving the second notification.

Abstract: An apparatus can include memory devices and a memory controller coupled to the memory devices via memory channels. The memory channels can disable a first memory channel associated with a first memory die in a respective memory chip of a memory device and perform a memory operation via a second memory channel involving a second memory die in the respective memory chip.

Abstract: A control mechanism may be implemented in a back-end of a memory sub-system to refresh rows of a memory device. Rows of the memory device can be refreshed based on a quantity of times the rows have been updated in a duration of time. Rows of the memory device can also be updated based on a duration of time between receipt of the activation command for the row and a pre-charge command for the row. Row of the memory device clan further be updated utilizing a pair of counters that implement a ping pong mechanism to retain data between different consecutive durations of time.

Abstract: Described apparatuses and methods relate to self-refresh arbitration. In a memory system with multiple memory components, an arbiter is configured to manage the occurrence of self-refresh operations. In aspects, the arbiter can receive one or more self-refresh request signals from at least one memory controller for authorization to command one or more memory components to enter a self-refresh mode. Upon receiving the one or more self-refresh request signals, the arbiter, based on a predetermined configuration, can transmit one or more self-refresh enable signals to the at least one memory controller with authorization to command the one or more memory components to enter the self-refresh mode. The configuration can ensure that fewer than all memory components simultaneously enter the self-refresh mode. In so doing, memory components can perform self-refresh operations without exceeding an instantaneous power threshold. The arbiter can be included in, for instance, a Compute Express Link™ (CXL™) memory module.

Abstract: Described apparatuses and methods relate to self-refresh arbitration. In a memory system with multiple memory components, an arbiter is configured to manage the occurrence of self-refresh operations. In aspects, the arbiter can receive one or more self-refresh request signals from at least one memory controller for authorization to command one or more memory components to enter a self-refresh mode. Upon receiving the one or more self-refresh request signals, the arbiter, based on a predetermined configuration, can transmit one or more self-refresh enable signals to the at least one memory controller with authorization to command the one or more memory components to enter the self-refresh mode. The configuration can ensure that fewer than all memory components simultaneously enter the self-refresh mode. In so doing, memory components can perform self-refresh operations without exceeding an instantaneous power threshold. The arbiter can be included in, for instance, a Compute Express Link™ (CXL™) memory module.

Abstract: A servo driven compliant mechanism is provided. The servo driven compliant mechanism includes a holder, a first pivot, a grinding tool, a posture sensor, a displacement sensor, an inner frame, and a first servomotor. The first pivot is perpendicular to an axial direction of the grinding tool. The posture sensor is used for sensing a posture of the grinding tool and sending a posture signal to be transformed into a torque compensation value for an effect of gravity. The displacement sensor is used for sensing a displacement of the grinding tool along the first pivot. The grinding tool is disposed in the inner frame, and the first pivot is movably disposed in the inner frame. The first servomotor is disposed in the inner frame and drives the grinding tool to rotate along the first pivot according to the torque compensation value and the displacement.

Abstract: A slim-type gas transporting device is provided and includes a base plate, a gas pump and a top covering. The base plate includes a first surface, a second surface, an accommodation groove, an outlet groove, a positioning portion, a ventilating hole, a circular truncated cone plug, an inlet tube and an outlet tube. The outlet groove includes an outlet channel in fluid communication with the outlet tube. The positioning portion surrounds the accommodation groove. The ventilating hole having a cone profile is located on the positioning portion and includes an inlet end in communication with the inlet tube and a ventilating end in communication with the accommodation groove. The circular truncated cone plug is accommodated in the ventilating hole. The gas pump is disposed on the accommodation groove and covers the outlet groove. The top covering is disposed on the positioning portion and covers the accommodation groove.

Abstract: The present invention provides a vibration assistant scribing apparatus for generating an indentation having a median crack of a depth on a substrate and the method for the same. The provided vibration assistant scribing apparatus includes a clamping device clamping a scribing wheel for scribing the substrate; a moving pedestal having a pressure device configured thereon, the pressure device providing a pressure to the scribing wheel through the clamping device; and a vibration generator configured on the clamping device and providing a vibration force to the scribing wheel through the clamping device, so as to increase the depth of the median crack thereby.

Abstract: A fan includes a fan frame having an upright barrel, a fan blade unit having a fan hub with radial blades, and a driving module formed of a stator, an axle bearing, a core shaft and a rotor for causing rotation of the fan hub with the blades relative to the stator. The stator has a collar affixed to the barrel of the fan frame, radial ribs extending from and spaced around the periphery of the collar, and three-dimensional wings respectively connected to the free ends of the radial ribs each three-dimensional wings having a smoothly arched and radially and axially extending outer surface.

Abstract: A memory cell with a vertical transistor has a semiconductor silicon substrate with a deep trench, in which the deep trench has a first sidewall region and a second sidewall region. A first insulating layer is formed overlying the first sidewall region. A second insulating layer is formed overlying the second sidewall region, in which the thickness of the first insulating layer is larger than the thickness of the second insulating layer. A gate electrode layer is sandwiched between the first insulating layer and the second insulating layer. A buried strap out-diffusion region is formed in the substrate adjacent to the second sidewall region, in which the buried strap out-diffusion region is located near the lower portion of the second insulating layer.

Abstract: A method for forming a bottle trench. First, a substrate covered by a photoresist layer is rotated to a specific angle prior to performance of lithography, thereby forming a rectangular opening in the photoresist layer and exposing the substrate, in which edges of the rectangular opening are substantially parallel to the {110} plane of the substrate due to the rotation of the substrate. Next, the exposed substrate is etched to form a trench therein, in which the sidewall surface of the trench is the {110} plane of the substrate. Finally, isotropic etching is performed on the substrate of the lower portion of the trench using an etching shield layer formed on the sidewall of the upper portion of the trench as an etching mask, to form the bottle trench. The invention also discloses a method of fabricating a bottle trench capacitor.

Abstract: A method for forming a bottle trench. First, a substrate covered by a photoresist layer is rotated to a specific angle prior to performance of lithography, thereby forming a rectangular opening in the photoresist layer and exposing the substrate, in which edges of the rectangular opening are substantially parallel to the {110} plane of the substrate due to the rotation of the substrate. Next, the exposed substrate is etched to form a trench therein, in which the sidewall surface of the trench is the {110} plane of the substrate. Finally, isotropic etching is performed on the substrate of the lower portion of the trench using an etching shield layer formed on the sidewall of the upper portion of the trench as an etching mask, to form the bottle trench. The invention also discloses a method of fabricating a bottle trench capacitor.

Abstract: A memory cell with a vertical transistor has a semiconductor silicon substrate with a deep trench, in which the deep trench has a first sidewall region and a second sidewall region. A first insulating layer is formed overlying the first sidewall region. A second insulating layer is formed overlying the second sidewall region, in which the thickness of the first insulating layer is larger than the thickness of the second insulating layer. A gate electrode layer is sandwiched between the first insulating layer and the second insulating layer. A buried strap out-diffusion region is formed in the substrate adjacent to the second sidewall region, in which the buried strap out-diffusion region is located near the lower portion of the second insulating layer.

Abstract: A method for fabricating a memory device with a vertical transistor and a trench capacitor. First, a capacitor is formed in a lower portion of a trench formed in a substrate. Next, a wiring structure and a first trench top isolation layer are successively formed overlying the capacitor. Next, a dielectric spacer is formed over the sidewall of the trench and overlying the first trench top isolation layer. Thereafter, the first trench top isolation layer is removed to expose the sidewall of the trench between the dielectric spacer and the wiring structure. Next, a buried strap is formed in the substrate around the exposed sidewall of the trench. Thereafter, the dielectric spacer is removed. Next, a second trench top isolation layer is formed overlying the wiring structure. Finally, a control gate is formed overlying the second trench top isolation layer.