Abstract: Corrosion resistant substrate supports and methods of making corrosion resistant substrate supports are provided herein. In some embodiments, a method of making corrosion resistant substrate supports includes exposing the substrate support disposed within a substrate processing chamber to a process gas comprising an aluminum containing precursor; and depositing an aluminum containing layer atop surfaces of the substrate support.

Abstract: Methods for depositing titanium oxide films by atomic layer deposition are disclosed. Titanium oxide films may include a titanium nitride cap, an oxygen rich titanium nitride cap or a mixed oxide nitride layer. Also described are methods for self-aligned double patterning including titanium oxide spacer films.

Abstract: A light-emitting device includes: a light-emitting stack including a first side, a second side opposite to the first side, a third side connecting the first side and the second side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, wherein the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode including a first section extended from the first electrode pad in a direction away from the third side, and a second section connecting to the first section and perpendicular to the first side; wherein a distance between the first electrode pad and the third side is smaller than a distance between the second electrode pad and the third side.

Abstract: A chip package includes a chip, a dam layer, a carrier substrate and a light shielding passivation layer. The chip has a first surface and a second surface opposite to the first surface, and a side surface is disposed between the first surface and the second surface. The dam layer is disposed on the first surface, and the carrier substrate is disposed on the dam layer. The light shielding passivation layer is disposed under the second surface and extended into the carrier substrate to cover the side surface of the chip.

Abstract: A light-emitting device comprises: a light-emitting stack comprising a first side, a second side opposite to the first side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, and the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode comprising a first section extended from the first electrode pad toward the second electrode pad, and a second section extended from the first electrode pad toward the first side.

Abstract: A chip package includes a semiconductor chip, an interposer, a polymer adhesive supporting layer, a redistribution layer and a packaging layer. The semiconductor chip has a sensor device and a conductive pad electrically connected to the sensing device, and the interposer is disposed on the semiconductor chip. The interposer has a trench and a through hole, which the trench exposes a portion of the sensing device, and the through hole exposes the conductive pad. The polymer adhesive supporting layer is interposed between the semiconductor chip and the interposer, and the redistribution layer is disposed on the interposer and in the through hole to be electrically connected to the conductive pad. The packaging layer covers the interposer and the redistribution layer, which the packaging layer has an opening exposing the trench.

Abstract: A chip package includes: a substrate; a signal pad and a ground pad disposed on the substrate; a first and a second conducting layers disposed on the substrate and electrically connected to the signal pad and the ground pad, respectively, wherein the first and the second conducting layers extend from an upper surface of the substrate towards a lower surface of the substrate along a first and a second side surfaces of the substrate, respectively, and the first and the second conducting layers protrude from the lower surface; and a protection layer disposed on the substrate, wherein the protection layer completely covers the entire portion of the first conducting layer located on the first side surface of the substrate, and the entire portion of the second conducting layer located on the second side surface of the substrate is not covered by the protection layer.

Abstract: An embodiment of the invention provides a chip package including: a first semiconductor substrate; a second semiconductor substrate disposed on the first semiconductor substrate, wherein the second semiconductor substrate includes a lower semiconductor layer, an upper semiconductor layer, and an insulating layer located between the lower semiconductor layer and the upper semiconductor layer, and a portion of the lower semiconductor layer electrically contacts with at least a pad on the first semiconductor substrate; a signal conducting structure disposed on a lower surface of the first semiconductor substrate, wherein the signal conducting structure is electrically connected to a signal pad on the first semiconductor substrate; and a conducting layer disposed on the upper semiconductor layer of the second semiconductor substrate and electrically contacted with the portion of the lower semiconductor layer electrically contacting with the at least one pad on the first semiconductor substrate.

Abstract: In a method for switching input modes of an electronic device, the electronic device includes a text input interface, a touch screen, and a voice input device. The method detects a current input mode used by the electronic device when the text input interface is activated. The current input mode is automatically switched to a voice input mode for processing a voice input operation when the voice input operation is performed on a voice input device of the electronic device. The current input mode is automatically switched to a handwriting mode for processing a handwriting operation when the handwriting operation is performed on a touch screen of the electronic device.

Abstract: A method embodiment for forming a semiconductor device includes providing a dielectric layer having a damaged surface and repairing the damaged surface of the dielectric layer. Repairing the damaged surface includes exposing the damaged surface of the dielectric layer to a precursor chemical, activating the precursor chemical using light energy, and filtering out a spectrum of the light energy while activating the precursor chemical.

Abstract: A clock generator circuit of a liquid display panel includes a charge sharing switch unit, a first capacitor, a first switch, a second switch, a third switch and a fourth switch. The charge sharing switch unit is configured to receive control signals and accordingly output a first-polarity voltage to the first capacitor. The clock generator circuit is configured to turn on the first switch, the second switch, the third switch and the fourth switch according to a specific sequence thereby outputting a clock signal. An operation method for the aforementioned clock generator circuit is also provided.

Abstract: A device includes a metal pad, and a passivation layer including portions overlapping edge portions of the metal pad. A Post-Passivation-Interconnect (PPI) includes a trace portion overlying the passivation layer, and a pad portion connected to the trace portion. A polymer layer includes an upper portion over the PPI, and a plug portion extending into, and encircled by, the pad portion of the PPI.

Abstract: A transmission mechanism of a lock assembly includes a base; a core assembly partially received in the base and having therein a core adapted to connect to the rod so as to control movement of the rod; an operating element rotatably connected to the base; a clutch device movably received in the base and selectively engaged with the operating element; a driving device received in the core assembly to drive the clutch device to move toward/away from the operating element; and an activation device connected to the base to control operation of the driving device such that the latch is moved with assistance of the rotation of the operating element when the clutch device is connected to the operating element and the latch is immovable when the clutch device is away from engagement with the operating element.

Abstract: A chip package includes a semiconductor chip, an interposer, a polymer adhesive supporting layer, a redistribution layer and a packaging layer. The semiconductor chip has a sensor device and a conductive pad electrically connected to the sensing device, and the interposer is disposed on the semiconductor chip. The interposer has a trench and a through hole, which the trench exposes a portion of the sensing device, and the through hole exposes the conductive pad. The polymer adhesive supporting layer is interposed between the semiconductor chip and the interposer, and the redistribution layer is disposed on the interposer and in the through hole to be electrically connected to the conductive pad. The packaging layer covers the interposer and the redistribution layer, which the packaging layer has an opening exposing the trench.

Abstract: A device includes a metal pad, and a passivation layer including portions overlapping edge portions of the metal pad. A Post-Passivation-Interconnect (PPI) includes a trace portion overlying the passivation layer, and a pad portion connected to the trace portion. A polymer layer includes an upper portion over the PPI, and a plug portion extending into, and encircled by, the pad portion of the PPI.

Abstract: Corrosion resistant substrate supports and methods of making corrosion resistant substrate supports are provided herein. In some embodiments, a method of making corrosion resistant substrate supports includes exposing the substrate support disposed within a substrate processing chamber to a process gas comprising an aluminum containing precursor; and depositing an aluminum containing layer atop surfaces of the substrate support.

Abstract: A one-pot synthesis of Nb5+-doped TiO2 nanoparticles (NPs) with low cost and high efficiency for dye sensitized solar cells (DSSCs) is disclosed in the present invention. The Nb5+-doped TiO2 NPs with Nb dopants of 0˜5 mol % are prepared by directly mixing TiO2 slurry with Nb2O5 gel obtained by UV treatment of a mixture of NbCl5 powder, ethanol and water in a certain ratio, following by heat treatment without using hydrothermal method. The as-prepared NPs exhibit well-crystallized pure anatase TiO2 phase with uniform particle distribution. The incorporation of Nb5+ leads to a stronger and broader light absorption in visible light range and a decrease of band gap with increasing Nb dopant content, which enhances the efficiencies of light-harvesting and electron injection and suppresses the charge recombination. The present method provides a simple and cost-effective mass-production route to synthesize n-type metallic ion doped TiO2 nanoparticles as excellent photoanode materials.