Patents by Inventor Yu-Ting Tseng

Yu-Ting Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10211313
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming an interlayer dielectric (ILD) layer around the gate structure; removing the gate structure to form a first recess; forming ferroelectric (FE) layer in the first recess; forming a compressive layer on the FE layer; performing a thermal treatment process; removing the compressive layer; and forming a work function metal layer in the recess.
    Type: Grant
    Filed: August 16, 2017
    Date of Patent: February 19, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shih-Hung Tsai, Po-Kuang Hsieh, Yu-Ting Tseng, Cheng-Ping Kuo, Kuan-Hao Tseng
  • Publication number: 20190019875
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming an interlayer dielectric (ILD) layer around the gate structure; removing the gate structure to form a first recess; forming ferroelectric (FE) layer in the first recess; forming a compressive layer on the FE layer; performing a thermal treatment process; removing the compressive layer; and forming a work function metal layer in the recess.
    Type: Application
    Filed: August 16, 2017
    Publication date: January 17, 2019
    Inventors: Shih-Hung Tsai, Po-Kuang Hsieh, Yu-Ting Tseng, Cheng-Ping Kuo, Kuan-Hao Tseng
  • Publication number: 20180367529
    Abstract: A method receives, by a processing device of a streaming server, a first request to view the media item from the client device via a connection between the client device and the streaming server. Prior to a verification that the client device is authorized to play the media item, the method provides an encrypted portion of the media item to the client device via the connection between the client device and the streaming server. Responsive to the verification that the client device is authorized to play the media item, the method sends, by the processing device via the connection between the client device and the streaming server, a cryptography key for decrypting the encrypted portion of the media item by the client device to facilitate the playback of the decrypted portion of the media item.
    Type: Application
    Filed: August 22, 2018
    Publication date: December 20, 2018
    Inventors: Yu-Ting Tseng, Pawel Jurczyk, Sean Watson, Matthew Dalcin
  • Patent number: 10091192
    Abstract: Implementations disclose merged video streaming, authorization, and metadata request. A method includes receiving, by a streaming server, a first request to view a media item from a client device via a connection between the client device and the streaming server, and sending a second request to an authorization server to verify that the client device is authorized to play the media item. The method further includes: prior to receiving a response from the authorization server, providing an encrypted portion of the media item to the client device via the connection, receiving, from the authorization server, a verification that the client device is authorized to play the media item, and sending, via the connection between the client device and the streaming server, a cryptography key for decrypting the encrypted portion of the media item to the client device.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: October 2, 2018
    Assignee: GOOGLE LLC
    Inventors: Yu-Ting Tseng, Pawel Jurczyk, Sean Watson, Matthew Dalcin
  • Publication number: 20180208616
    Abstract: Disclosed herein are novel compounds of formula (I) and (II), each of which may serve as a reagent to deliver nitric oxide (NO) and a therapeutic agent to treat NO-associated diseases. Also disclosed are a pharmaceutical composition comprising the compound of formula (I) or (II), a composite material comprising the compound of formula (I) or (II), and the uses thereof.
    Type: Application
    Filed: January 24, 2017
    Publication date: July 26, 2018
    Applicant: Chung Yuan Christian University
    Inventors: Tsai-Te LU, Hsiao-Wen HUANG, Chia-Her LIN, Yu-Ting TSENG, Wen-Feng LIAW, Hsi-Ya HUANG, Show-Jen CHIOU
  • Publication number: 20180063117
    Abstract: Implementations disclose merged video streaming, authorization, and metadata request. A method includes receiving, by a streaming server, a first request to view a media item from a client device via a connection between the client device and the streaming server, and sending a second request to an authorization server to verify that the client device is authorized to play the media item. The method further includes: prior to receiving a response from the authorization server, providing an encrypted portion of the media item to the client device via the connection, receiving, from the authorization server, a verification that the client device is authorized to play the media item, and sending, via the connection between the client device and the streaming server, a cryptography key for decrypting the encrypted portion of the media item to the client device.
    Type: Application
    Filed: August 23, 2016
    Publication date: March 1, 2018
    Inventors: Yu-Ting Tseng, Pawel Jurczyk, Sean Watson, Matthew Dalcin
  • Patent number: 9753973
    Abstract: A method and a system of searching note items by mobile terminals. The method includes the following steps: when marking a note item, detecting a gesture input from a touchscreen or choosing a gesture which has been input, and saving the gesture and the corresponding relation between the gesture and the note item into a memory; when a note item needs to be searched, detecting a gesture input from the touchscreen, and according to the input gesture, searching a matching gesture from the gestures saved in said memory, if the matching gesture is found, then displaying each note item corresponding to the matching gesture according to said corresponding relation. A custom gesture is created as a marker for a note item and the matching note item is displayed according to the input gesture when searching the note item.
    Type: Grant
    Filed: November 13, 2014
    Date of Patent: September 5, 2017
    Assignee: Spreadtrum Communications (Shanghai) Co., Ltd.
    Inventors: Hsiao Yu Chen, Sung Hui Kao, Chau Yan Wang, Ming Shou Chen, Yu Ting Tseng
  • Patent number: 9721840
    Abstract: The present invention provides a complementary metal oxide semiconductor device, comprising a PMOS and an NMOS. The PMOS has a P type metal gate, which comprises a bottom barrier layer, a P work function metal (PWFM) layer, an N work function tuning (NWFT) layer, an N work function metal (NWFM) layer and a metal layer. The NMOS has an N type metal gate, which comprises the NWFT layer, the NWFM layer and the low-resistance layer. The present invention further provides a method of forming the same.
    Type: Grant
    Filed: June 28, 2016
    Date of Patent: August 1, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chien-Ming Lai, Chien-Chung Huang, Yu-Ting Tseng, Ya-Huei Tsai, Yu-Ping Wang
  • Patent number: 9685383
    Abstract: A method of forming a semiconductor device includes following steps. First of all, a first work function layer is formed on a substrate. Next, a first patterned photoresist layer is formed on the first work function layer. Then, the first work function layer is partially removed by using the first patterned photoresist layer as a mask to form a patterned first work function layer. Subsequently, the first patterned photoresist layer is removed by providing radical oxygen.
    Type: Grant
    Filed: May 13, 2015
    Date of Patent: June 20, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chiu-Hsien Yeh, Zhen Wu, Yen-Cheng Chang, Yu-Ting Tseng
  • Publication number: 20160336194
    Abstract: A method of forming a semiconductor device includes following steps. First of all, a first work function layer is formed on a substrate. Next, a first patterned photoresist layer is formed on the first work function layer. Then, the first work function layer is partially removed by using the first patterned photoresist layer as a mask to form a patterned first work function layer. Subsequently, the first patterned photoresist layer is removed by providing radical oxygen.
    Type: Application
    Filed: May 13, 2015
    Publication date: November 17, 2016
    Inventors: Chiu-Hsien Yeh, Zhen Wu, Yen-Cheng Chang, Yu-Ting Tseng
  • Publication number: 20160307805
    Abstract: The present invention provides a complementary metal oxide semiconductor device, comprising a PMOS and an NMOS. The PMOS has a P type metal gate, which comprises a bottom barrier layer, a P work function metal (PWFM) layer, an N work function tuning (NWFT) layer, an N work function metal (NWFM) layer and a metal layer. The NMOS has an N type metal gate, which comprises the NWFT layer, the NWFM layer and the low-resistance layer. The present invention further provides a method of forming the same.
    Type: Application
    Filed: June 28, 2016
    Publication date: October 20, 2016
    Inventors: Chien-Ming Lai, Chien-Chung Huang, Yu-Ting Tseng, Ya-Huei Tsai, Yu-Ping Wang
  • Patent number: 9412743
    Abstract: The present invention provides a complementary metal oxide semiconductor device, comprising a PMOS and an NMOS. The PMOS has a P type metal gate, which comprises a bottom barrier layer, a P work function metal (PWFM) layer, an N work function tuning (NWFT) layer, an N work function metal (NWFM) layer and a metal layer. The NMOS has an N type metal gate, which comprises the NWFT layer, the NWFM layer and the low-resistance layer. The present invention further provides a method of forming the same.
    Type: Grant
    Filed: October 29, 2014
    Date of Patent: August 9, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chien-Ming Lai, Chien-Chung Huang, Yu-Ting Tseng, Ya-Huei Tsai, Yu-Ping Wang
  • Patent number: 9379242
    Abstract: A method of fabricating a fin field effect transistor including providing a substrate having at least one fin structure, a dummy gate, and an internal dielectric layer thereon, removing the dummy gate to form a gate trench on the fin structure, blanketly forming a stress film on the substrate to cover a surface of the gate trench, performing a thermal annealing process, removing the stress film, and forming a metal gate is in the gate trench.
    Type: Grant
    Filed: May 28, 2015
    Date of Patent: June 28, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Mon-Sen Lin, Yu-Ping Wang, Yu-Ting Tseng, Hao-Yeh Liu, Chun-tsen Lu
  • Patent number: 9349822
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having an interlayer dielectric (ILD) layer thereon; forming a first recess, a second recess, and a third recess in the ILD layer; forming a material layer on the ILD layer and in the first recess, the second recess, and the third recess; performing a first treatment on the material layer in the first recess; and performing a second treatment on the material layer in the first recess and second recess.
    Type: Grant
    Filed: November 18, 2014
    Date of Patent: May 24, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Wei Yang, Yu-Feng Liu, Jian-Cun Ke, Chia-Fu Hsu, En-Chiuan Liou, Ssu-I Fu, Chi-Mao Hsu, Nien-Ting Ho, Yu-Ru Yang, Yu-Ping Wang, Chien-Ming Lai, Yi-Wen Chen, Yu-Ting Tseng, Ya-Huei Tsai, Chien-Chung Huang, Tsung-Yin Hsieh, Hung-Yi Wu
  • Publication number: 20160104786
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having an interlayer dielectric (ILD) layer thereon; forming a first recess, a second recess, and a third recess in the ILD layer; forming a material layer on the ILD layer and in the first recess, the second recess, and the third recess; performing a first treatment on the material layer in the first recess; and performing a second treatment on the material layer in the first recess and second recess.
    Type: Application
    Filed: November 18, 2014
    Publication date: April 14, 2016
    Inventors: Chih-Wei Yang, Yu-Feng Liu, Jian-Cun Ke, Chia-Fu Hsu, En-Chiuan Liou, Ssu-I Fu, Chi-Mao Hsu, Nien-Ting Ho, Yu-Ru Yang, Yu-Ping Wang, Chien-Ming Lai, Yi-Wen Chen, Yu-Ting Tseng, Ya-Huei Tsai, Chien-Chung Huang, Tsung-Yin Hsieh, Hung-Yi Wu
  • Publication number: 20160093616
    Abstract: The present invention provides a complementary metal oxide semiconductor device, comprising a PMOS and an NMOS. The PMOS has a P type metal gate, which comprises a bottom barrier layer, a P work function metal (PWFM) layer, an N work function tuning (NWFT) layer, an N work function metal (NWFM) layer and a metal layer. The NMOS has an N type metal gate, which comprises the NWFT layer, the NWFM layer and the low-resistance layer. The present invention further provides a method of forming the same.
    Type: Application
    Filed: October 29, 2014
    Publication date: March 31, 2016
    Inventors: Chien-Ming Lai, Chien-Chung Huang, Yu-Ting Tseng, Ya-Huei Tsai, Yu-Ping Wang
  • Patent number: 9192063
    Abstract: A flash drive including a storage element, a housing, and an integrating member is provided. The storage element has a first connector and a second connector. The integrating member is pivoted to the storage member and coupled to the housing, wherein the integrating member and the housing move relatively in a first path or a second path. The integrating member and the housing move relatively along the first path, such that the first connector is extended outside or hidden inside the housing. The integrating member and the housing move relatively along the second path and drive the storage element to move relative to the integrating member, such that the second connector is extended outside or hidden in the integrating member. An operating method of flash drive is also provided.
    Type: Grant
    Filed: December 2, 2013
    Date of Patent: November 17, 2015
    Assignee: PHISON ELECTRONICS CORP.
    Inventors: Wei-Hung Lin, Yu-Ting Tseng
  • Publication number: 20150134644
    Abstract: The present invention relates to mobile terminals. Disclosed are a method and system of searching note items. In the present invention, the method includes the following steps: when marking a note item, detecting a gesture input from a touchscreen or choosing a gesture which has been input, and saving the gesture and the corresponding relation between the gesture and the note item into a memory; when a note item needs to be searched, detecting a gesture input from the touchscreen, and according to the input gesture, searching a matching gesture from the gestures saved in said memory, if the matching gesture is found, then displaying each note item corresponding to the matching gesture according to said corresponding relation. In the present invention, a custom gesture is created as a marker for a note item and the matching note item is displayed according to the input gesture when searching the note item, so that each relative note item can be found quickly.
    Type: Application
    Filed: November 13, 2014
    Publication date: May 14, 2015
    Inventors: Hsiao Yu CHEN, Sung Hui KAO, Chau Yan WANG, Ming Shou CHEN, Yu Ting TSENG
  • Publication number: 20150109725
    Abstract: A flash drive including a storage element, a housing, and an integrating member is provided. The storage element has a first connector and a second connector. The integrating member is pivoted to the storage member and coupled to the housing, wherein the integrating member and the housing move relatively in a first path or a second path. The integrating member and the housing move relatively along the first path, such that the first connector is extended outside or hidden inside the housing. The integrating member and the housing move relatively along the second path and drive the storage element to move relative to the integrating member, such that the second connector is extended outside or hidden in the integrating member. An operating method of flash drive is also provided.
    Type: Application
    Filed: December 2, 2013
    Publication date: April 23, 2015
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Wei-Hung Lin, Yu-Ting Tseng
  • Publication number: 20140135657
    Abstract: According to one embodiment of a management system for damage risk of tissue pressure, at least one pressure sensor is deployed on at least one pressure-withstanding location on a body surface of a user, and detects a plurality of extremity pressure signals from the at least a pressure-withstanding location. An information processing device uses the plurality of extremity pressure signals to compute and store at least one risk assessment index, uses a plurality of features of the plurality of extremity pressure signals to compute at least one risk adjustment factor, and then uses the at least one risk adjustment factor to calibrate the at least one risk assessment index.
    Type: Application
    Filed: August 13, 2013
    Publication date: May 15, 2014
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chi-Kang Wu, Tsai-Ya Lai, Hsiao-Wei Yeh, Yu-Ting Tseng