Abstract: A semiconductor package includes a package substrate; semiconductor devices disposed on the package substrate; a package ring disposed on a perimeter of the package substrate surrounding the semiconductor devices; a cover including silicon bonded to the package ring and covering the semiconductor devices; and a thermal interface structure (TIS) thermally connecting the semiconductor devices to the cover.

Abstract: In an example embodiment, a solution is used to provide container volume replication via a container storage replication log and volume buffer synchronization, which is built on top of a container cloud platform whose container metadata and replication runtime configuration are all managed by a storage manager (a service orchestrated by its job scheduler and service orchestrator). This container volume replication ensures the data security for a long-running service in the container. In the case of any disaster, the in-memory database and application data inside of the container can be recovered via volume replication. This provides container volume replication for long-running containerized applications whose states keep changing.

Abstract: A surgical instrument and a battery pack for use with the surgical instrument are disclosed. The surgical instrument includes a handle assembly, having a protruding portion; and a battery pack, detachably assembled on the handle assembly, operated by the protruding portion, and having a battery unit, where the battery pack includes a discharging system comprising a discharge element, and a switching member, operated to electrically connect the discharge element to the battery unit of the battery pack to form a discharge circuit, and having an initial open state, in which the discharge circuit is non-conductive, an intermediate open state, in which the switching member cooperates with the protruding portion to make the discharge circuit non-conductive, and a closed state, in which the switching member is separated from the protruding portion to make the discharge circuit conducting.

Abstract: A calibration apparatus includes a processor, an alignment device, and an arm. The alignment device captures images in a three-dimensional space, and a tool is arranged on a flange of the arm. The processor records a first matrix of transformation between an end-effector coordinate-system and a robot coordinate-system, and performs a tool calibration procedure according to the images captured by the alignment device for obtaining a second matrix of transformation between a tool coordinate-system and the end-effector coordinate-system. The processor calculates relative position of a tool center point of the tool in the robot coordinate-system based on the first and second matrixes, and controls the TCP to move in the three-dimensional space for performing a positioning procedure so as to regard points in an alignment device coordinate-system as points of the TCP, and calculates the relative positions of points in the alignment device coordinate-system and in the robot coordinate-system.

Abstract: A battery, a powered device, and a method and device for preparing a battery are provided. In some embodiments, the battery includes: a first battery cell and a second battery cell, wherein a pressure relief mechanism of the first battery cell and a pressure relief mechanism of the second battery cell are arranged opposite to 5 each other in a first direction; a box body accommodating the first battery cell and the second battery cell; and a partition component configured to partition the first battery cell and the second battery cell in the first direction, wherein the partition component includes a first wall and a second wall arranged opposite to each other, the first wall is provided with a first through hole, the second wall is provided with a second through hole.

Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.

Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.

Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to one embodiment includes an active region including a channel region and a source/drain region adjacent the channel region, a gate structure over the channel region of the active region, a source/drain contact over the source/drain region, a dielectric feature over the gate structure and including a lower portion adjacent the gate structure and an upper portion away from the gate structure, and an air gap disposed between the gate structure and the source/drain contact. A first width of the upper portion of the dielectric feature along a first direction is greater than a second width of the lower portion of the dielectric feature along the first direction. The air gap is disposed below the upper portion of the dielectric feature.

Abstract: In one embodiment, a method includes determining, by a first network component, a sender shaper drop value based on the following: a maximum sequence number; a minimum sequence number; and a sender sequence counter number associated with the first network component. The method also includes determining, by the first network component, a wide area network (WAN) link drop value based on the sender sequence counter number associated with the first network component and a receiver sequence counter number associated with a second network component. The method further includes determining, by the first network component, whether to adjust a sender shaper rate based on the sender shaper drop value and the WAN link drop value.

Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts top surfaces of the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.

Abstract: A method of processing a substrate that includes: flowing dioxygen (O2) and an adsorbate precursor into a plasma processing chamber that is configured to hold the substrate including an organic layer and a patterned etch mask; sustaining an oxygen-rich plasma while flowing the O2 and the adsorbate precursor, oxygen species from the O2 and the adsorbate precursor reacting under the oxygen-rich plasma to form an adsorbate; and exposing the substrate to the oxygen-rich plasma to form a recess in the organic layer, where the adsorbate forms a sidewall passivation layer in the recess.

Abstract: A method of processing a substrate that includes: flowing an etch gas, O2, and an adsorbate precursor into a plasma processing chamber that is configured to hold the substrate including a silicon-containing dielectric layer and a patterned mask layer, the etch gas including hydrogen and fluorine; generating a plasma in the plasma processing chamber while flowing the etch gas, O2, and the adsorbate precursor, the adsorbate precursor being oxidized to form an adsorbate; and patterning, with the plasma, the silicon-containing dielectric layer on the substrate, where the adsorbate forms a sidewall passivation layer.

Abstract: A manifold system includes a supply manifold and a return manifold. The supply manifold delivers fluid to cold plates to cool processing units of a computing system. The return manifold receives the fluid from the cold plates. The supply manifold has supply fluid ports equidistantly spaced about the side surface of the supply manifold, and the return manifold has return fluid ports equidistantly spaced about the side surface of the return manifold.

Abstract: The present invention disclosure also relates to a pharmaceutical composition that ccomprises the compound as an active ingredient.

Abstract: A display substrate and a display device are provided. The display substrate includes a base substrate, a pixel circuit layer and an anode layer; the pixel circuit layer includes a plurality of pixel driving circuits, the anode layer includes a plurality of anode groups, each of the plurality of anode groups includes a first anode and a second anode which are oppositely arranged, the first anode includes a first main body portion and a first connection portion, the first anode further includes an extension portion and an anode compensation portion, an orthographic projection of the anode compensation portion on the base substrate covers one thin film transistor in the pixel driving circuit connected to the first connection portion.

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for speech synthesis. The methods, systems, and apparatus include actions of obtaining an audio representation of speech of a target speaker, obtaining input text for which speech is to be synthesized in a voice of the target speaker, generating a speaker vector by providing the audio representation to a speaker encoder engine that is trained to distinguish speakers from one another, generating an audio representation of the input text spoken in the voice of the target speaker by providing the input text and the speaker vector to a spectrogram generation engine that is trained using voices of reference speakers to generate audio representations, and providing the audio representation of the input text spoken in the voice of the target speaker for output.

Abstract: The invention relates to antiviral compounds, compositions comprising antiviral compounds, and methods of use. In particular, the antiviral compounds are cytidine triphosphate synthetase 1 (CTPS1) inhibitors that are effective in treating and/or preventing viral infection and in particular, SARS-CoV-2 infection and/or COVID-19 disease.

Abstract: Methods and structures for modulating an inner spacer profile include providing a fin having an epitaxial layer stack including a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes removing the plurality of dummy layers to form a first gap between adjacent semiconductor channel layers of the plurality of semiconductor channel layers. Thereafter, in some examples, the method includes conformally depositing a dielectric layer to substantially fill the first gap between the adjacent semiconductor channel layers. In some cases, the method further includes etching exposed lateral surfaces of the dielectric layer to form an etched-back dielectric layer that defines substantially V-shaped recesses. In some embodiments, the method further includes forming a substantially V-shaped inner spacer within the substantially V-shaped recesses.

Abstract: The present disclosure provides a method for producing a composite crystal, the method is performed in a multi-chamber growth device, and the multi-chamber growth device includes a plurality of chambers. The method includes conveying and processing at least one substrate between a plurality of chambers and obtaining at least one composite crystal by growing a target crystal through vapor deposition in one of the plurality of chambers, the at least one composite crystal including the at least one substrate and the target crystal.

Abstract: An electronic device including a body and a receptacle connector is provided. The body has a side wall surface, a receptacle slot located at the side wall surface, a waterproof protrusion protruding from the side wall surface, and two gutters located at the side wall surface, where the waterproof protrusion is located above the receptacle slot, and the two gutters are respectively located at two opposite sides of the receptacle slot. The receptacle connector is disposed in the receptacle slot.