Patents by Inventor Yu Wen Cheng

Yu Wen Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240234582
    Abstract: A semiconductor device includes a gate electrode, a gate dielectric located over the gate electrode, a channel layer including a semiconductor material and located over the gate dielectric, blocking layers located over the channel layer, covering portions of channel layer, and spaced apart from each other, buffer layers respectively located over the blocking layers, respectively surrounded by the blocking layers, and including a material that receives hydrogen, and source/drain contacts respectively located over the buffer layers and respectively surrounded by the buffer layers.
    Type: Application
    Filed: January 6, 2023
    Publication date: July 11, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wu-Wei TSAI, Hai-Ching CHEN, Kai-Wen CHENG, Yu-Ming LIN, Chung-Te LIN
  • Publication number: 20240236257
    Abstract: A method, a processing device, and a system for information display are proposed. The information display system is installed on a mobile vehicle and includes a light transmitting display, an image capturing device configured to capture a target image of a target object, a positioning device configured to generate position information of the mobile vehicle, and a processing device configured to perform the following operations. First reference position information of the target object is calculated according to the position information of the mobile vehicle. Object recognition processing is performed on the target image. A display position of virtual information of the target object is determined using a recognition result of the object recognition processing or the first reference position information according to the recognition result of the object recognition processing.
    Type: Application
    Filed: March 3, 2023
    Publication date: July 11, 2024
    Applicant: Industrial Technology Research Institute
    Inventors: Yu-Hsuan Su, Hsin-Hung Chen, Ting-Hsun Cheng, Yu-Ju Chao, Chi-Wen Jung, Chia-Hsun Tu
  • Publication number: 20240217868
    Abstract: A method of performing a selective etch on an array substrate including the following is provided, and the array substrate includes a substrate and a component layer disposed on the substrate. Deionized water, hydrogen peroxide, and an acid are mixed to prepare a first solution, and the acid includes sulfuric acid, hydrochloric acid, oxalic acid or a combination thereof. An alkoxy silane compound is added to the first solution to prepare a second solution. The array substrate is placed into the second solution to remove the component layer, and an aging second solution is formed. The substrate is taken out from the aging second solution.
    Type: Application
    Filed: December 29, 2022
    Publication date: July 4, 2024
    Applicant: Industrial Technology Research Institute
    Inventors: Hao-Wen Cheng, Ming-Huei Yen, Wen-Jin Li, Yu-Ting Guan, Ding-Shiang Wang
  • Publication number: 20240175854
    Abstract: An air pollution forecast management system including an air quality management device and an Internet of Things (IOT) cloud platform is disclosed. The air quality management device includes a dust particle sensing module being configured to sense gas exhausted from a smoke exhaust flue. The IoT cloud platform is configured to compute, at a second time after a first time, an exhaust gas set of the gas drifting from the first time to the second time by using current-observed meteorological data at the second time, receive a plurality of air-pollution sets at a plurality of geographic locations at the second time, compute a plurality of influencing results of the plurality of air-pollution sets respectively associated with the exhaust gas set, and generate a feedback instruction according to at least one of the plurality of influencing results to control gas emission of the smoke exhaust flue.
    Type: Application
    Filed: February 10, 2023
    Publication date: May 30, 2024
    Inventors: Chao-Kai CHENG, Szu-Wei HUANG, Yu-Wen CHEN, Chung-Hsiang MU
  • Publication number: 20240162317
    Abstract: A non-volatile memory device includes a memory cell including a substrate, a select gate, a control gate, a planar floating gate, a coupling dielectric layer, an erase gate dielectric layer, and an erase gate. The select gate and the control gate are disposed on the substrate and laterally spaced apart from each other, and the control gate includes a non-vertical surface. The planar floating gate includes a lateral tip laterally spaced apart from the control gate. The coupling dielectric layer includes a first thickness (T1). The erase gate dielectric layer covers the non-vertical surface of the control gate and the lateral tip of the planar floating gate, and includes a second thickness (T2). The erase gate covers the erase gate dielectric layer and the lateral tip of the planar floating gate. The first thickness and the second thickness satisfy the following relation: (T2)<(T1)<2(T2).
    Type: Application
    Filed: October 20, 2023
    Publication date: May 16, 2024
    Inventors: Der-Tsyr Fan, I-Hsin Huang, Tzung-Wen Cheng, Yu-Ming Cheng, Chen-Ming Tsai
  • Publication number: 20240162315
    Abstract: A non-volatile memory device includes at least one memory cell, and the memory cell includes a substrate, an assist gate structure, a tunneling dielectric layer, a floating gate, and an upper gate structure. The assist gate structure is disposed on the substrate. The floating gate includes two opposite first top edges arranged along a first direction, two opposite first sidewalls arranged along the first direction, and two opposite second sidewalls arranged along a second direction different from the first direction. The upper gate structure covers the assist gate structure and the floating gate, where at least one of the first top edges of the floating gate is embedded in the upper gate structure. Portions of the upper gate structure extend beyond the second sidewalls of the floating gate in the second direction, and the portions of the upper gate structure are disposed above the substrate.
    Type: Application
    Filed: December 28, 2022
    Publication date: May 16, 2024
    Applicant: IOTMEMORY TECHNOLOGY INC.
    Inventors: Der-Tsyr Fan, I-Hsin Huang, Tzung-Wen Cheng, Yu-Ming Cheng
  • Publication number: 20240162316
    Abstract: A non-volatile memory device includes at least one memory cell and the memory cell includes a substrate, a select gate, a control gate, a floating gate, and an erase gate. The select gate is disposed on the substrate, and the control gate is disposed on the substrate and laterally spaced apart from the select gate. The control gate comprises a non-vertical surface. The floating gate includes a vertical portion and a horizontal portion. The vertical portion disposed between the select gate and the control gate and includes a first top tip laterally spaced apart from the control gate. The horizontal portion is disposed between the substrate and the control gate, where the horizontal portion includes a lateral tip laterally and vertically spaced apart from the control gate. The erase gate covers the non-vertical surface of the control gate and the lateral tip of the horizontal portion of the floating gate.
    Type: Application
    Filed: October 6, 2023
    Publication date: May 16, 2024
    Inventors: Der-Tsyr Fan, I-Hsin Huang, Tzung-Wen Cheng, Yu-Ming Cheng
  • Patent number: 11983041
    Abstract: A flexible display, including a stand, a supporting mechanism, a flexible screen, a driving component, a driven component, and a link, is provided. The supporting mechanism is connected to the stand. The flexible screen is attached to the supporting mechanism. The driving component is disposed on the stand. The driven component is disposed on a side of the supporting mechanism distant from the stand. The link has a first end and a second end opposite to the first end. The first end is connected to the driving component, and the second end is connected to the driven component. The driving component drives the driven component through the link to move on a first horizontal plane to drive the supporting mechanism and the flexible screen to transform when the driving component moves between the first horizontal plane and a second horizontal plane that is parallel to the first horizontal plane.
    Type: Grant
    Filed: October 21, 2021
    Date of Patent: May 14, 2024
    Assignee: COMPAL ELECTRONICS, INC.
    Inventors: Yu-Wen Cheng, Yan-Yu Chen, Chun-Wen Wang, Chung-Lin Hsieh
  • Patent number: 11961899
    Abstract: A semiconductor device includes a gate structure extending along a first lateral direction. The semiconductor device includes a source/drain structure disposed on one side of the gate structure along a second lateral direction, the second lateral direction perpendicular to the first lateral direction. The semiconductor device includes an air gap disposed between the gate structure and the source/drain structure along the second lateral direction, wherein the air gap is disposed over the source/drain structure.
    Type: Grant
    Filed: January 23, 2023
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Yao Lin, Hsiao Wen Lee, Yu-Shan Cheng, Chao-Cheng Chen
  • Publication number: 20240121935
    Abstract: Methods for fabricating semiconductor structures are provided. An exemplary method includes forming a first transistor structure and a second transistor structure over a substrate, wherein each transistor structure includes at least one nanosheet. The method further includes depositing a metal over each transistor structure and around each nanosheet; depositing a coating over the metal; depositing a mask over the coating; and patterning the mask to define a patterned mask, wherein the patterned mask lies over a masked portion of the coating and the second transistor structure, and wherein the patterned mask does not lie over an unmasked portion of the coating and the first transistor structure. The method further includes etching the unmasked portion of the coating and the metal over the first transistor structure using a dry etching process with a process pressure of from 30 to 60 (mTorr).
    Type: Application
    Filed: January 18, 2023
    Publication date: April 11, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Y.L. Cheng, Tzu-Wen Pan, Yu-Hsien Lin, Ryan Chia-Jen Chen
  • Patent number: 11907028
    Abstract: A portable electronic device, including a first body and a second body, is provided. The second body includes a support structure and a display panel. The support structure is pivotally connected to the first body and is connected to the display panel. The support structure has a first bendable portion. An included angle between the first bendable portion and an edge of the support structure is 45 degrees. The support structure is adapted to be bent along the first bendable portion, so that the second body switches between a first mode and a second mode relative to the first body.
    Type: Grant
    Filed: June 16, 2022
    Date of Patent: February 20, 2024
    Assignee: COMPAL ELECTRONICS, INC.
    Inventors: Yu-Wen Cheng, Wei-Ning Chai, Ting-Wei Liu, Tzu-Yung Huang, Wang-Hung Yeh
  • Publication number: 20240033316
    Abstract: Provided is a nanoparticle or a pharmaceutical composition including the same for treating or remitting a neovascularization or an angiogenesis in eye segments, and the nanoparticle includes a hyaluronic acid and a therapeutic peptide.
    Type: Application
    Filed: July 26, 2022
    Publication date: February 1, 2024
    Inventors: CHING-LI TSENG, YU-WEN CHENG, YU-YI WU, ERH-HSUAN HSIEH, JIA-HUA LIANG, FAN-LI LIN
  • Publication number: 20220413563
    Abstract: A portable electronic device, including a first body and a second body, is provided. The second body includes a support structure and a display panel. The support structure is pivotally connected to the first body and is connected to the display panel. The support structure has a first bendable portion. An included angle between the first bendable portion and an edge of the support structure is 45 degrees. The support structure is adapted to be bent along the first bendable portion, so that the second body switches between a first mode and a second mode relative to the first body.
    Type: Application
    Filed: June 16, 2022
    Publication date: December 29, 2022
    Applicant: COMPAL ELECTRONICS, INC.
    Inventors: Yu-Wen Cheng, Wei-Ning Chai, Ting-Wei Liu, Tzu-Yung Huang, Wang-Hung Yeh
  • Publication number: 20220367667
    Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.
    Type: Application
    Filed: July 20, 2022
    Publication date: November 17, 2022
    Inventors: Yu-Wen Cheng, Cheng-Tung Lin, Chih-Wei Chang, Hong-Mao Lee, Ming-Hsing Tsai, Sheng-Hsuan Lin, Wei-Jung Lin, Yan-Ming Tsai, Yu-Shiuan Wang, Hung-Hsu Chen, Wei-Yip Loh, Ya-Yi Cheng
  • Patent number: 11411094
    Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.
    Type: Grant
    Filed: January 13, 2020
    Date of Patent: August 9, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Wen Cheng, Cheng-Tung Lin, Chih-Wei Chang, Hong-Mao Lee, Ming-Hsing Tsai, Sheng-Hsuan Lin, Wei-Jung Lin, Yan-Ming Tsai, Yu-Shiuan Wang, Hung-Hsu Chen, Wei-Yip Loh, Ya-Yi Cheng
  • Patent number: 11334112
    Abstract: An electronic device including a first body, a supporting member, a second body, and an input assembly is provided. The first body is provided with a front end and a rear end opposite to each other. One terminal end of the supporting member is pivotally connected to the rear end of the first body. The second body is pivotally connected to the other terminal end of the supporting member. The input assembly is rotatably connected to the second body and is suitable for being carried by the first body. When a lower edge of the second body is located at the front end of the first body, the input assembly protrudes out from the front end of the first body.
    Type: Grant
    Filed: May 7, 2020
    Date of Patent: May 17, 2022
    Assignee: COMPAL ELECTRONICS, INC.
    Inventors: Yan-Yu Chen, Wang-Hung Yeh, Yu-Wen Cheng, Chun-Wen Wang
  • Publication number: 20220147103
    Abstract: A flexible display, including a stand, a supporting mechanism, a flexible screen, a driving component, a driven component, and a link, is provided. The supporting mechanism is connected to the stand. The flexible screen is attached to the supporting mechanism. The driving component is disposed on the stand. The driven component is disposed on a side of the supporting mechanism distant from the stand. The link has a first end and a second end opposite to the first end. The first end is connected to the driving component, and the second end is connected to the driven component. The driving component drives the driven component through the link to move on a first horizontal plane to drive the supporting mechanism and the flexible screen to transform when the driving component moves between the first horizontal plane and a second horizontal plane that is parallel to the first horizontal plane.
    Type: Application
    Filed: October 21, 2021
    Publication date: May 12, 2022
    Applicant: COMPAL ELECTRONICS, INC.
    Inventors: Yu-Wen Cheng, Yan-Yu Chen, Chun-Wen Wang, Chung-Lin Hsieh
  • Patent number: 11216030
    Abstract: A portable electronic device includes a host, a sliding base, a base plate, a display and a sliding rotating element. The sliding base is disposed on the host and has at least one guiding portion and at least one sliding slot connected to the guiding portion. The base plate is disposed on the sliding base. The display is pivoted on the base plate. The sliding rotating element is fixed to the base plate and is rotatably and slidably connected to the sliding base, and the display and the base plate are configured to rotate or slide on the sliding base along with the sliding rotating element.
    Type: Grant
    Filed: September 7, 2020
    Date of Patent: January 4, 2022
    Assignee: COMPAL ELECTRONICS, INC.
    Inventors: Yan-Yu Chen, Chien-Feng Chan, Ming-Cheng Tsou, Yu-Wen Cheng, Chun-Wen Wang, Wang-Hung Yeh
  • Patent number: 11195791
    Abstract: A method for forming a semiconductor contact structure is provided. The method includes depositing a dielectric layer over a substrate. The method also includes etching the dielectric layer to expose a sidewall of the dielectric layer and a top surface of the substrate. In addition, the method includes forming a silicide region in the substrate. The method also includes applying a plasma treatment to the sidewall of the dielectric layer and the top surface of the substrate to form a nitridation region adjacent to a periphery of the silicide region. The method further includes depositing an adhesion layer on the dielectric layer and the silicide region.
    Type: Grant
    Filed: December 9, 2019
    Date of Patent: December 7, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Wen Cheng, Wei-Yip Loh, Yu-Hsiang Liao, Sheng-Hsuan Lin, Hong-Mao Lee, Chun-I Tsai, Ken-Yu Chang, Wei-Jung Lin, Chih-Wei Chang, Ming-Hsing Tsai
  • Publication number: 20210296168
    Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.
    Type: Application
    Filed: June 4, 2021
    Publication date: September 23, 2021
    Inventors: Wei-Yip Loh, Chih-Wei Chang, Hong-Mao Lee, Chun-Hsien Huang, Yu-Ming Huang, Yan-Ming Tsai, Yu-Shiuan Wang, Hung-Hsu Chen, Yu-Kai Chen, Yu-Wen Cheng