Abstract: A semiconductor device includes a gate structure extending along a first lateral direction. The semiconductor device includes a source/drain structure disposed on one side of the gate structure along a second lateral direction, the second lateral direction perpendicular to the first lateral direction. The semiconductor device includes an air gap disposed between the gate structure and the source/drain structure along the second lateral direction, wherein the air gap is disposed over the source/drain structure.

Abstract: Methods for fabricating semiconductor structures are provided. An exemplary method includes forming a first transistor structure and a second transistor structure over a substrate, wherein each transistor structure includes at least one nanosheet. The method further includes depositing a metal over each transistor structure and around each nanosheet; depositing a coating over the metal; depositing a mask over the coating; and patterning the mask to define a patterned mask, wherein the patterned mask lies over a masked portion of the coating and the second transistor structure, and wherein the patterned mask does not lie over an unmasked portion of the coating and the first transistor structure. The method further includes etching the unmasked portion of the coating and the metal over the first transistor structure using a dry etching process with a process pressure of from 30 to 60 (mTorr).

Abstract: A portable electronic device, including a first body and a second body, is provided. The second body includes a support structure and a display panel. The support structure is pivotally connected to the first body and is connected to the display panel. The support structure has a first bendable portion. An included angle between the first bendable portion and an edge of the support structure is 45 degrees. The support structure is adapted to be bent along the first bendable portion, so that the second body switches between a first mode and a second mode relative to the first body.

Abstract: Provided is a nanoparticle or a pharmaceutical composition including the same for treating or remitting a neovascularization or an angiogenesis in eye segments, and the nanoparticle includes a hyaluronic acid and a therapeutic peptide.

Abstract: A portable electronic device, including a first body and a second body, is provided. The second body includes a support structure and a display panel. The support structure is pivotally connected to the first body and is connected to the display panel. The support structure has a first bendable portion. An included angle between the first bendable portion and an edge of the support structure is 45 degrees. The support structure is adapted to be bent along the first bendable portion, so that the second body switches between a first mode and a second mode relative to the first body.

Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.

Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.

Abstract: An electronic device including a first body, a supporting member, a second body, and an input assembly is provided. The first body is provided with a front end and a rear end opposite to each other. One terminal end of the supporting member is pivotally connected to the rear end of the first body. The second body is pivotally connected to the other terminal end of the supporting member. The input assembly is rotatably connected to the second body and is suitable for being carried by the first body. When a lower edge of the second body is located at the front end of the first body, the input assembly protrudes out from the front end of the first body.

Abstract: A flexible display, including a stand, a supporting mechanism, a flexible screen, a driving component, a driven component, and a link, is provided. The supporting mechanism is connected to the stand. The flexible screen is attached to the supporting mechanism. The driving component is disposed on the stand. The driven component is disposed on a side of the supporting mechanism distant from the stand. The link has a first end and a second end opposite to the first end. The first end is connected to the driving component, and the second end is connected to the driven component. The driving component drives the driven component through the link to move on a first horizontal plane to drive the supporting mechanism and the flexible screen to transform when the driving component moves between the first horizontal plane and a second horizontal plane that is parallel to the first horizontal plane.

Abstract: A portable electronic device includes a host, a sliding base, a base plate, a display and a sliding rotating element. The sliding base is disposed on the host and has at least one guiding portion and at least one sliding slot connected to the guiding portion. The base plate is disposed on the sliding base. The display is pivoted on the base plate. The sliding rotating element is fixed to the base plate and is rotatably and slidably connected to the sliding base, and the display and the base plate are configured to rotate or slide on the sliding base along with the sliding rotating element.

Abstract: A method for forming a semiconductor contact structure is provided. The method includes depositing a dielectric layer over a substrate. The method also includes etching the dielectric layer to expose a sidewall of the dielectric layer and a top surface of the substrate. In addition, the method includes forming a silicide region in the substrate. The method also includes applying a plasma treatment to the sidewall of the dielectric layer and the top surface of the substrate to form a nitridation region adjacent to a periphery of the silicide region. The method further includes depositing an adhesion layer on the dielectric layer and the silicide region.

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

Abstract: A portable electronic device includes a host, a sliding base, a base plate, a display and a sliding rotating element. The sliding base is disposed on the host and has at least one guiding portion and at least one sliding slot connected to the guiding portion. The base plate is disposed on the sliding base. The display is pivoted on the base plate. The sliding rotating element is fixed to the base plate and is rotatably and slidably connected to the sliding base, and the display and the base plate are configured to rotate or slide on the sliding base along with the sliding rotating element.

Abstract: An electronic device including a first body, a supporting member, a second body, and an input assembly is provided. The first body is provided with a front end and a rear end opposite to each other. One terminal end of the supporting member is pivotally connected to the rear end of the first body. The second body is pivotally connected to the other terminal end of the supporting member. The input assembly is rotatably connected to the second body and is suitable for being carried by the first body. When a lower edge of the second body is located at the front end of the first body, the input assembly protrudes out from the front end of the first body.

Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.