Abstract: A method for forming a semiconductor contact structure is provided. The method includes depositing a dielectric layer over a substrate. The method also includes etching the dielectric layer to expose a sidewall of the dielectric layer and a top surface of the substrate. In addition, the method includes forming a silicide region in the substrate. The method also includes applying a plasma treatment to the sidewall of the dielectric layer and the top surface of the substrate to form a nitridation region adjacent to a periphery of the silicide region. The method further includes depositing an adhesion layer on the dielectric layer and the silicide region.

Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.

Abstract: A semiconductor device and method of forming the same that includes forming a dielectric layer over a substrate and patterning a contact region in the dielectric layer, the contact region having side portions and a bottom portion that exposes the substrate. The method can also include forming a dielectric barrier layer in the contact region to cover the side portions and the bottom portion, and etching the dielectric barrier layer to expose the substrate. Subsequently, a conductive layer can be formed to cover the side portions and the bottom portion of the contact region and the conductive layer can be annealed to form a silicide region in the substrate beneath the bottom portion of the contact region, and the conductive layer can then be selectively removed on the side portions of the contact region.

Abstract: Provided is a protection cover, applicable to an electronic device. The protection cover includes a cover body and at least one sensing module. The cover body has a view window, wherein the cover body is suitable for covering a display surface of the electronic device and exposing a part of the display surface via the view window. The at least one sensing module is provided on the cover body and aligns with the view window, wherein the at least one sensing module is suitable for sensing at least one object in the view window to generate a touch signal, and transmitting the touch signal to the electronic device.

Abstract: A semiconductor device and method of forming the same that includes forming a dielectric layer over a substrate and patterning a contact region in the dielectric layer, the contact region having side portions and a bottom portion that exposes the substrate. The method can also include forming a dielectric barrier layer in the contact region to cover the side portions and the bottom portion, and etching the dielectric barrier layer to expose the substrate. Subsequently, a conductive layer can be formed to cover the side portions and the bottom portion of the contact region and the conductive layer can be annealed to form a silicide region in the substrate beneath the bottom portion of the contact region, and the conductive layer can then be selectively removed on the side portions of the contact region.

Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

Abstract: The present disclosure relates generally to techniques for forming a continuous adhesion layer for a contact plug. A method includes forming an opening through a dielectric layer to an active area on a substrate. The method includes performing a first plasma treatment along a sidewall of the opening. The method includes performing an atomic layer deposition (ALD) process to form a metal nitride layer along the sidewall of the opening. The ALD process includes a plurality of cycles. Each cycle includes flowing a precursor to form a metal monolayer along the sidewall and performing a second plasma treatment to treat the metal monolayer with nitrogen. The method includes depositing a conductive material on the metal nitride layer in the opening to form a conductive feature.

Abstract: A notebook computer including a foldable body, a display unit, a touch pad, a keyboard, a first control unit, a wake-up unit, and a voice-assistant system, a second control unit electrically connected to the first control unit, the wake-up unit, and the voice-assistant system is provided. The first control unit is electrically connected to the display unit, the touch pad, and the keyboard. When the foldable body is in a folded and closed state, the display unit, the touch pad, and the keyboard are inactivated, the notebook computer is in a first mode. In the first mode, a user drives the wake-up unit to generate a wake-up signal being transmitted to the second control unit to activate the first control unit and the voice-assistant system. The notebook computer is transformed to a second mode, wherein the display unit, the touch pad, and the keyboard are still inactivated or sleeping.

Abstract: The present disclosure relates generally to techniques for forming a continuous adhesion layer for a contact plug. A method includes forming an opening through a dielectric layer to an active area on a substrate. The method includes performing a first plasma treatment along a sidewall of the opening. The method includes performing an atomic layer deposition (ALD) process to form a metal nitride layer along the sidewall of the opening. The ALD process includes a plurality of cycles. Each cycle includes flowing a precursor to form a metal monolayer along the sidewall and performing a second plasma treatment to treat the metal monolayer with nitrogen. The method includes depositing a conductive material on the metal nitride layer in the opening to form a conductive feature.

Abstract: A portable electronic device includes a first body and a second body. The second body includes a processing unit, and a first touch panel, a second touch panel, a keyboard and at least one detecting module electrically connected to the processing unit, respectively. The keyboard is slidably disposed above the second touch panel, and the detecting module is adapted to detect a position of the keyboard. When the keyboard is located at a first position, the keyboard module covers the second touch panel, and the detecting module transmits a first signal to the processing unit so that the first touch panel is turned on. When the keyboard is located at a second position, the keyboard exposes the second touch panel, and the detecting module transmits a second signal to the processing unit so that the first touch panel is turned off. A touch panel controlling method of the portable electronic device is further provided.

Abstract: Provided is a protection cover, applicable to an electronic device. The protection cover includes a cover body and at least one sensing module. The cover body has a view window, wherein the cover body is suitable for covering a display surface of the electronic device and exposing a part of the display surface via the view window. The at least one sensing module is provided on the cover body and aligns with the view window, wherein the at least one sensing module is suitable for sensing at least one object in the view window to generate a touch signal, and transmitting the touch signal to the electronic device.

Abstract: A portable electronic device includes first body and second body pivoted to the first body. The first body includes casing, supporter, first magnetic component and torsion component. The casing includes accommodating trench and first trench. First lateral of the supporter is pivoted to the casing via the torsion component, and second lateral of the supporter includes notch. When the supporter is located in the accommodating trench and the first magnetic component extends into the notch, the supporter is positioned inside the accommodating trench by the first magnetic component, and the torsion component stores elastic potential energy. When the second body rotates close to the first body, the first magnetic component exits the notch due to magnetic repulsive force of second magnetic component of the second body, and the torsion component releases the elastic potential energy so that the second lateral of the supporter rotates out to support the second body.

Abstract: A portable electronic device includes a first body and a second body. The first body includes a casing, a supporter, a first magnetic component and a torsion component. The casing includes an accommodating trench and a first trench communicated with the accommodating trench. A first lateral of the supporter is pivoted to the casing via the torsion component, and a second lateral of the supporter includes a notch. The magnetic component is slidably disposed in the first trench. The second body is pivoted to the first body and includes a second magnetic component. When the supporter is located in the accommodating trench and the first magnetic component extends into the notch, the supporter is positioned inside the accommodating trench by the first magnetic component, and the torsion component stores elastic potential energy.