Abstract: A light-emitting diode and a manufacturing method thereof are provided. The manufacturing method includes following steps. First, an LED wafer is provided. The LED wafer includes a substrate and a light-emitting semiconductor stacking structure positioned on the surface of the substrate. The light-emitting semiconductor stacking structure includes a first type semiconductor layer, an active layer, and a second type semiconductor layer from a side of the substrate. Second, dicing lanes are defined on the upper surface of the LED wafer. Third, dicing is performed along the dicing lanes of the substrate using a laser. The laser is focused on the lower surface of the substrate to form a surface hole and focused inside the substrate to form an internal hole. The diameter of the surface hole is greater than the diameter of the internal hole. Fourth, the LED wafer is separated into LED chips along the dicing lanes.

Abstract: A method of manufacturing a memory structure is provided. The method includes forming a first gate structure, a second gate structure, and a plurality of source/drain regions in a substrate, in which the plurality of source/drain regions are disposed on opposite sides of the first gate structure and the second gate structures; performing a dry etching process to form a trench between the first gate structure and the second gate structure; performing a wet etching process to expand the trench, in which the expanded trench has a hexagonal shaped cross section profile; and forming a bit line contact in the expanded trench.

Abstract: A method of manufacturing a semiconductor structure includes: forming a first oxide layer over a landing pad layer; forming a middle patterned dielectric layer over the first oxide layer; sequentially forming a second oxide layer and a top dielectric layer over the middle patterned dielectric layer; forming a trench through the top dielectric layer, the second oxide layer and the first oxide layer; conformally forming a bottom conductive layer in the trench; removing a portion of the top dielectric layer adjacent to the trench to expose a portion of the second oxide layer beneath the portion of the top dielectric layer; and performing an etching process to remove the second oxide layer and the first oxide layer. A semiconductor structure is also provided.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first stacked nanostructure and a second stacked nanostructure formed over a substrate. The semiconductor device structure includes a first gate structure formed over the first stacked nanostructure, and the first gate structure includes a first portion of a gate dielectric layer and a first portion of a filling layer. The semiconductor device structure includes a second gate structure formed over the second stacked nanostructure, and the second gate structure includes a second portion of the gate dielectric layer and a second portion of the filling layer. The semiconductor device structure includes a first isolation layer between the first gate structure and the second gate structure, wherein the first isolation layer has an extending portion which is formed in a recess between the gate dielectric layer and the filling layer.

Abstract: Provided herein are tetravalent antibodies that specifically bind to human PSGL-1. Unlike bivalent antibodies, these tetravalent antibodies contain a dimer of two monomers, with each monomer comprising two light chain variable (VL) domains and two heavy chain variable (VH) domains. This format allows for cross-linker/FcR-expressing cell-independent tetravalent antibodies against PSGL-1 that show enhanced efficacy as compared to bivalent PSGL-1 antibodies. These tetravalent antibodies can be used in a variety of diagnostic and therapeutic methods, including without limitation treating T-cell mediated inflammatory diseases, transplantations, and transfusions.

Abstract: Provided are a memory cell and a method of forming the same. The memory cell includes a bottom electrode, a top electrode, and a storage element layer. The storage element layer is disposed between the bottom and top electrodes. An extending direction of a sidewall of the storage element layer is different from an extending direction of a sidewall of the top electrode. A semiconductor device having the memory cell is also provided.

Abstract: A memory device and a method for manufacturing the memory device are provided. The memory device includes a stack and a plurality of memory strings. The stack is disposed on the substrate, and the stack includes a plurality of conductive layers and a plurality of insulating layers alternately stacked. The memory strings pass through the stack along a first direction, wherein a first memory string in the memory strings includes a first conductive pillar and a second conductive pillar, a channel layer, and a memory structure. The first conductive pillar and the second conductive pillar respectively extend along the first direction and are separated from each other. The channel layer is disposed between the first conductive pillar and the second conductive pillar. The memory structure surrounds the second conductive pillar, and the memory structure includes a resistive memory material.

Abstract: A method includes forming a dielectric layer over a substrate, the dielectric layer having a top surface; etching an opening in the dielectric layer; forming a bottom electrode within the opening, the bottom electrode including a barrier layer; forming a phase-change material (PCM) layer within the opening and on the bottom electrode, wherein a top surface of the PCM layer is level with or below the top surface of the dielectric layer; and forming a top electrode on the PCM layer.

Abstract: Disclosed herein are humanized antibodies, antigen-binding fragments thereof, and antibody conjugates, that are capable of specifically binding to certain biantennary Lewis antigens, which antigens are expressed in a variety of cancers. The presently disclosed antibodies are useful to target antigen-expressing cells for treatment or detection of disease, including various cancers. Also provided are polynucleotides, vectors, and host cells for producing the disclosed antibodies and antigen-binding fragments thereof. Pharmaceutical compositions, methods of treatment and detection, and uses of the antibodies, antigen-binding fragments, antibody conjugates, and compositions are also provided.

Abstract: A semiconductor structure includes a semiconductor substrate; a spacer located in a trench of the semiconductor substrate, wherein the spacer includes two trench nitride layers and an empty gap sandwiched between the two trench nitride layers; a first nitride layer disposed to seal an exposed opening of the empty gap between the two trench nitride layers; a second nitride layer over the first nitride layer, wherein the second nitride layer has a higher density than the first nitride layer; and a third nitride layer having a first portion over the second nitride layer and a second portion disposed on sidewalls of the two trench nitride layers.

Abstract: A semiconductor device includes a substrate, a bitline, a bitline contact and a land pad. The bitline is over the substrate. The bitline contact is in contact with a bottom of the bitline and in the substrate. The bitline contact includes a first portion and a second portion below the first portion, and the first portion is wider than the second portion from a cross-section view. A word line is adjacent to the bitline contact. A land pad is on the substrate, and the land pad is adjacent to the word line, such that the word line is between the bitline contact and the land pad.

Abstract: An electronic seal system includes an electronic seal and a RFID reader. A passive RFID chip in the electronic seal has a configuration word and a seal state identification code inside. The value of the configuration word changes according to the state of the state configuration pins of the passive RFID chip. The state of the configuration pins is determined by the state of a bolt of the electronic seal. The RFID reader rewrites the seal state identification code according to the configuration word and the seal state identification code read by the RFID reader.

Abstract: A semiconductor structure includes a semiconductor substrate; a spacer located in a trench of the semiconductor substrate, wherein the spacer includes two trench nitride layers and an empty gap sandwiched between the two trench nitride layers; a first nitride layer disposed to seal an exposed opening of the empty gap between the two trench nitride layers; a second nitride layer over the first nitride layer, wherein the second nitride layer has a higher density than the first nitride layer; and a third nitride layer having a first portion over the second nitride layer and a second portion disposed on sidewalls of the two trench nitride layers.

Abstract: A method of manufacturing a memory structure is provided. The method includes forming a first gate structure, a second gate structure, and a plurality of source/drain regions in a substrate, in which the plurality of source/drain regions are disposed on opposite sides of the first gate structure and the second gate structures; performing a dry etching process to form a trench between the first gate structure and the second gate structure; performing a wet etching process to expand the trench, in which the expanded trench has a hexagonal shaped cross section profile; and forming a bit line contact in the expanded trench.

Abstract: The present disclosure provides a method for treating arthritis by using a stem cell preparation. The stem cell preparation of the present disclosure can effectively delay cartilage degeneration caused by arthritis, and it is confirmed by whole blood analysis and blood biochemical analysis that the stem cell preparation in the form of three-dimensional stem cell spheres provides a safe treatment for arthritis. The present disclosure also provides a method for preparing the stem cell preparation.

Abstract: A semiconductor device includes a substrate, a bitline, a bitline contact and a land pad. The bitline is over the substrate. The bitline contact is in contact with a bottom of the bitline and in the substrate. The bitline contact includes a first portion and a second portion below the first portion, and the first portion is wider than the second portion from a cross-section view. A word line is adjacent to the bitline contact. A land pad is on the substrate, and the land pad is adjacent to the word line, such that the word line is between the bitline contact and the land pad.

Abstract: A method of manufacturing a memory structure is provided. The method includes forming a first gate structure, a second gate structure, and a plurality of source/drain regions in a substrate, in which the plurality of source/drain regions are disposed on opposite sides of the first gate structure and the second gate structures; performing a dry etching process to form a trench between the first gate structure and the second gate structure; performing a wet etching process to expand the trench, in which the expanded trench has a hexagonal shaped cross section profile; and forming a bit line contact in the expanded trench.

Abstract: A method of manufacturing a memory structure is provided. The method includes forming a first gate structure, a second gate structure, and a plurality of source/drain regions in a substrate, in which the plurality of source/drain regions are disposed on opposite sides of the first gate structure and the second gate structures; performing a dry etching process to form a trench between the first gate structure and the second gate structure; performing a wet etching process to expand the trench, in which the expanded trench has a hexagonal shaped cross section profile; and forming a bit line contact in the expanded trench.

Abstract: A gas sensing device is adapted to detect a concentration of a target gas. The gas sensing device comprises a dielectric layer, a reference sensing portion, a target sensing portion, and a controller. The dielectric layer is disposed on a surface. The reference sensing portion and the target sensing portion are respectively disposed on a supporting side of the dielectric layer, with said supporting side facing away from the surface. The reference sensing portion includes a first conductive layer and a first sensing layer with low sensitivity to the target gas. The target sensing portion includes a second conductive layer and a second sensing layer with high sensitivity to the target gas. The controller obtains the immittance values of the first conductive layer and the second conductive layer, and calculates a concentration value of the target gas according to the immittance values and a correlation function.

Abstract: A gas sensing device is adapted to detect a concentration of a target gas. The gas sensing device comprises a dielectric layer, a reference sensing portion, a target sensing portion, and a controller. The dielectric layer is disposed on a surface. The reference sensing portion and the target sensing portion are respectively disposed on a supporting side of the dielectric layer, with said supporting side facing away from the surface. The reference sensing portion includes a first conductive layer and a first sensing layer with low sensitivity to the target gas. The target sensing portion includes a second conductive layer and a second sensing layer with high sensitivity to the target gas. The controller obtains the immittance values of the first conductive layer and the second conductive layer, and calculates a concentration value of the target gas according to the immittance values and a correlation function.