Patents by Inventor Yuan Cheng Zheng

Yuan Cheng Zheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SPLIT GATE STRUCTURE, POWER MOS DEVICE, AND MANUFACTURING METHOD
    Publication number: 20210296453
    Abstract: A split gate structure is disclosed. The split gate structure includes a first polysilicon, a characteristic oxide, and a second polysilicon sequentially disposed in a trench in a vertical direction upward from a bottom of the trench. An upper surface of the characteristic oxide has a height difference less than 1500 ? between a higher center portion and a lower periphery portion. The split gate structure effectively improves the breakdown performance and the IGSS performance. A power MOS device having the split gate structure and a manufacturing method of the split gate structure are also provided.
    Type: Application
    Filed: May 14, 2020
    Publication date: September 23, 2021
    Inventors: Yuan Cheng ZHENG, Xin Huan SHI
  • Split gate structure, power MOS device, and manufacturing method
    Patent number: 11127823
    Abstract: A split gate structure is disclosed. The split gate structure includes a first polysilicon, a characteristic oxide, and a second polysilicon sequentially disposed in a trench in a vertical direction upward from a bottom of the trench. An upper surface of the characteristic oxide has a height difference less than 1500 ? between a higher center portion and a lower periphery portion. The split gate structure effectively improves the breakdown performance and the IGSS performance. A power MOS device having the split gate structure and a manufacturing method of the split gate structure are also provided.
    Type: Grant
    Filed: May 14, 2020
    Date of Patent: September 21, 2021
    Assignee: HeJian Technology (Suzhou) Co., Ltd.
    Inventors: Yuan Cheng Zheng, Xin Huan Shi