Abstract: A manufacturing method is applied to set a stackable chip package. The manufacturing method includes encapsulating a plurality of chips stacked with each other, disposing a lateral surface of the stacked chips having conductive elements onto a substrate, disassembling the substrate from the conductive elements when the stacked chips are encapsulated, and disposing a dielectric layer with openings on the stacked chips to align the openings with the conductive elements for ball mounting process.

Abstract: A stacked package structure has a metal casing, a stacked chipset, an encapsulation and a redistribution layer. The stacked chipset is adhered in the metal casing. The encapsulation is formed in the metal casing to encapsulate the stacked chip set, but a plurality of surfaces of the metal pads are exposed through the encapsulation. The redistribution layer is further formed on the encapsulation and electrically connects to the metal pads of the stacked chipset. Therefore, the stacked package structure includes the metal casing, so an efficiency of heat dissipation and structural strength are increased.

Abstract: A stacked package structure has a metal casing, a stacked chipset, an encapsulation and a redistribution layer. The stacked chipset is adhered in the metal casing. The encapsulation is formed in the metal casing to encapsulate the stacked chip set, but a plurality of surfaces of the metal pads are exposed through the encapsulation. The redistribution layer is further formed on the encapsulation and electrically connects to the metal pads of the stacked chipset. Therefore, the stacked package structure includes the metal casing, so an efficiency of heat dissipation and structural strength are increased.

Abstract: A chip package structure including a first circuit structure, a chip, an electronic device, a first encapsulant, a second encapsulant, a plurality of through pillars, and an electromagnetic interference (EMI) shielding layer is provided. The chip has an active surface facing the first circuit structure. The electronic device has a connection surface facing the first circuit structure. The chip and the electronic device are disposed on opposite sides of the first circuit structure respectively. The first encapsulant encapsulates the chip. The second encapsulant encapsulates the electronic device. The through pillars penetrate the first encapsulant and are electrically connected to the first circuit structure. The EMI shielding layer covers the first encapsulant and the second encapsulant. The chip or the electronic device is grounded by the EMI shielding layer.

Abstract: A manufacturing method is applied to set a stackable chip package. The manufacturing method includes encapsulating a plurality of chips stacked with each other, disposing a lateral surface of the stacked chips having conductive elements onto a substrate, disassembling the substrate from the conductive elements when the stacked chips are encapsulated, and disposing a dielectric layer with openings on the stacked chips to align the openings with the conductive elements for ball mounting process.

Abstract: A stacked package has plurality of chip packages stacked on active surfaces of each other, a dielectric layer, a redistribution layer and a plurality of external terminals. Each chip package has an exterior conductive element formed on the active surface. Each exterior conductive element has a cut edge exposed on at least one of the lateral side of the chip package. The dielectric layer, the redistribution layer and the external terminals are formed in sequence on the lateral side with the exposed cut edges to form the electrical connection between the cut edges, the redistribution layer and the external terminals. Therefore, the process for forming the electrical connections is simplified to enhance the reliability and the UPH for manufacturing the stacked package.

Abstract: A stacked package has plurality of chip packages stacked on a base. Each chip package has an exterior conductive element formed on the active surface. Each exterior conductive element has a cut edge exposed on a lateral side of the chip package. The lateral trace is formed through the encapsulant and electrically connects to the cut edges of the chip packages. The base has an interconnect structure to form the electrical connection between the lateral trace and the external terminals. Therefore, the process for forming the electrical connections is simplified to enhance the reliability and the UPH for manufacturing the stacked package.

Abstract: A stacked package has plurality of chip packages stacked on active surfaces of each other, a dielectric layer, a redistribution layer and a plurality of external terminals. Each chip package has an exterior conductive element formed on the active surface. Each exterior conductive element has a cut edge exposed on at least one of the lateral side of the chip package. The dielectric layer, the redistribution layer and the external terminals are formed in sequence on the lateral side with the exposed cut edges to form the electrical connection between the cut edges, the redistribution layer and the external terminals. Therefore, the process for forming the electrical connections is simplified to enhance the reliability and the UPH for manufacturing the stacked package.

Abstract: A package structure may include a one-piece metal carrier, a die, a mold layer and a redistribution layer. The one-piece metal carrier may include a bottom portion and a first supporting structure, and the one-piece metal carrier may have a recess defined by the bottom portion and the first supporting structure. The die may be disposed in the recess of the one-piece metal carrier, and the die may have a plurality of conductive bumps. The mold layer may be formed to encapsulate the die. The mold layer may expose a portion of each of the plurality of conductive bumps and a portion of the first supporting structure. The redistribution layer may be disposed on the mold layer and electrically connected to the plurality of conductive bumps.

Abstract: A package structure may include a one-piece metal carrier, a die, a mold layer and a redistribution layer. The one-piece metal carrier may include a bottom portion and a first supporting structure, and the one-piece metal carrier may have a recess defined by the bottom portion and the first supporting structure. The die may be disposed in the recess of the one-piece metal carrier, and the die may have a plurality of conductive bumps. The mold layer may be formed to encapsulate the die. The mold layer may expose a portion of each of the plurality of conductive bumps and a portion of the first supporting structure. The redistribution layer may be disposed on the mold layer and electrically connected to the plurality of conductive bumps.

Abstract: A manufacturing method of a package-on package structure including at least the following steps is provided. A die is bonded on a first circuit carrier. A spacer is disposed on the die. The spacer and the first circuit carrier are connected through a plurality of conductive wires. An encapsulant is formed to encapsulate the die, the spacer and the conductive wires. A thickness of the encapsulant is reduced until at least a portion of each of the conductive wires is removed to form a first package structure. A second package structure is stacked on the first package structure. The second package structure is electrically connected to the conductive wires.

Abstract: A carrier substrate includes an insulation encapsulation, first conductive patterns, second conductive patterns, at least one first dummy pattern, and at least one second dummy pattern. The carrier substrate has a first layout region and a second layout region. The first conductive patterns and the first dummy pattern are located in the first layout region. The second conductive patterns and the second dummy pattern are located in the second layout region. The first and second conductive patterns and the first and second dummy patterns are embedded in the insulation encapsulation. The insulation encapsulation exposes top surfaces of the first and second conductive patterns and the first and second dummy patterns. The first dummy pattern and the second dummy pattern are insulated from the first conductive patterns and the second conductive patterns. An edge profile of the first dummy pattern facing the second dummy pattern is non-linear.

Abstract: Provided is a semiconductor structure including a first die and a second die. The first die has a first conductive structure embedded in a dielectric layer. The second die has a second conductive structure embedded in the dielectric layer. A first interface is provided between the first conductive structure and the dielectric layer. A second interface is provided between the second conductive structure and the dielectric layer. A shape of the dielectric layer between the first interface and the second interface is a non-linear shape.

Abstract: A carrier substrate includes an insulation encapsulation, first conductive patterns, second conductive patterns, at least one first dummy pattern, and at least one second dummy pattern. The carrier substrate has a first layout region and a second layout region. The first conductive patterns and the first dummy pattern are located in the first layout region. The second conductive patterns and the second dummy pattern are located in the second layout region. The first and second conductive patterns and the first and second dummy patterns are embedded in the insulation encapsulation. The insulation encapsulation exposes top surfaces of the first and second conductive patterns and the first and second dummy patterns. The first dummy pattern and the second dummy pattern are insulated from the first conductive patterns and the second conductive patterns. An edge profile of the first dummy pattern facing the second dummy pattern is non-linear.