Patents by Inventor Yuan Guo

Yuan Guo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050140273
    Abstract: An organic light emitting diode (OLED) display includes a substrate defined with a plurality of pixel areas, a heating circuit structure disposed on the substrate, and a plurality of OLEDs corresponding to each pixel area. The heating circuit structure includes two conductive lines not connected to each other, a plurality of heating lines electrically connected to the two conductive lines and covering portions of each pixel areas, and a ground electrode.
    Type: Application
    Filed: August 18, 2004
    Publication date: June 30, 2005
    Inventors: Wen-Yuan Guo, Wei-Chieh Hsueh, An Shih, Shih-Chang Chang
  • Publication number: 20050077914
    Abstract: A non-destructive contact test method for testing an electric characteristic of a test object is provided. The method includes providing an apparatus having a conductor, wherein the conductor is in a liquid state; and using the conductor to contact a surface of the test object for testing the electric characteristic of the test object. Thus, damage to the test object during the test can be effectively avoided.
    Type: Application
    Filed: May 18, 2004
    Publication date: April 14, 2005
    Inventors: Wen-Yuan Guo, Chao-Yu Meng
  • Publication number: 20040185607
    Abstract: A thin film transistor display includes a driving circuit and an active matrix. The driving circuit comprises a first thin film transistor structure. The first thin film transistor structure includes a first gate, source and drain regions, a first LDD region, a second LDD region and a first channel region between the first and the second LDD regions. The first gate region is disposed over the first channel region, and partially or completely overlies the first and the second LDD regions. The active matrix is controlled by the driving circuit and comprises a second thin film transistor structure. The second thin film transistor structure includes a second gate, source and drain regions, a third LDD region, a fourth LDD region and a second channel region between the third and the fourth LDD regions. The second gate region is disposed over the second channel region and substantially overlaps with neither of the first and the second LDD regions.
    Type: Application
    Filed: February 19, 2004
    Publication date: September 23, 2004
    Inventors: An Shih, Chao-Yu Meng, Wen Yuan Guo