Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.

Abstract: A connection-pipe sediment prevention device and method. In said connection-pipe sediment prevention device, at least a pressuring element is disposed at an opening of a pipe body of said connection-pipe, and a controller controls reciprocal movements of said pressuring elements, to make suspension liquid to flow in said connection-pipe and not to produce sediment. A nozzle is provided at bottom of said connection-pipe, to spray out said suspension liquid. Said connection-pipe sediment prevention method utilizes same means to make powder distribute evenly in said suspension liquid, so that said suspension liquid is sprayed out evenly from said nozzle. A connection-pipe principle is used, such that said suspension liquid having insoluble powder will not produce sediment, in achieving uniform spray. In addition, it is not required to put in large amount of powder and liquid at one time, thus saving production cost.

Abstract: A fluorescence powder spraying device capable of detecting instantly color temperature of white light in a manufacturing process, comprising: a spraying region, provided with a movable nozzle and an LED component-to-be-sprayed; a measuring region, provided with a light source and a light detector; and a monitor plate, which can be moved in said spraying region and said measuring region. Said monitor plate undergoes at least a fluorescence powder spraying process with said LED components-to-be-sprayed in said spraying region, to form at least a fluorescence powder layer, and in said measuring region, use said light source to agitate said fluorescence powder layer on said monitor plate, and use said light detector to measure color temperature of white light, to detect speedily color temperature of said fluorescence powder layer, hereby raising. yield of LED component reaching the target color temperature.

Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.

Abstract: A light emitting diode (LED) package includes a substrate, a light emitting diode (LED) die mounted to the substrate, a frame on the substrate, a wire bonded to the light emitting diode (LED) die and to the substrate, and a transparent dome configured as a lens encapsulating the light emitting diode (LED) die. A method for fabricating a light emitting diode (LED) package includes the steps of: providing a substrate; forming a frame on the substrate; attaching a light emitting diode (LED) die to the substrate; wire bonding a wire to the light emitting diode (LED) die and to the substrate; and dispensing a transparent encapsulation material on the frame configured to form a transparent dome and lens for encapsulating the light emitting diode (LED) die.

Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

Abstract: The invention relates to a wafer-type light emitting device having a substrate, one or more light emitting semiconductors formed on the substrate, one or more frames provided over the one or more light emitting semiconductors, and one or more wavelength-converting layers applied on the one or more light emitting semiconductors and confined by the one or more frames, wherein the wafer-type light emitting device is diced into a plurality of separate light emitting units.

Abstract: The invention relates to a chip-type light emitting device including one or more light emitting semiconductors and one or more frames provided over a top of the one or more light emitting semiconductors.

Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

Abstract: LED structure can be packaged by using flip-chip package. An LED structure is covered by a conduction enhancing layer. A bumping area definition layer is then formed on the conduction enhancing layer to expose bumping area portions with p-pad and n-pad underneath, and a bumping pad is then formed over the bumping area portions. The bumping area definition layer and then exposed conduction enhancing layer is removed subsequently.

Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.

Abstract: A vertical light-emitting diode (VLED) structure with an omni-directional reflector (ODR) that may offer increased light extraction and greater luminous efficiency when compared to conventional VLEDs is provided.

Abstract: A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprises a gas source including a VI Group compound element. The performance of the semiconductor device activated by plasma according to this invention is similar to the performance of the semiconductor device activated by heat in the prior art. Therefore, this invention can provide a method, other then heat, for activating the P-type semiconductor layer of a semiconductor device. Moreover, in this invention, during the activating process by plasma, the layers other than P-type semiconductor layer will not be affected by plasma. That is, the activating process according to this invention will not cause any side-reactions in the layers other than the P-type semiconductor layer of a semiconductor device.

Abstract: LED structure can be packaged by using flip-chip package. An LED structure is covered by a conduction enhancing layer. A bumping area definition layer is then formed on the conduction enhancing layer to expose bumping area portions with p-pad and n-pad underneath, and a bumping pad is then formed over the bumping area portions. The bumping area definition layer and then exposed conduction enhancing layer is removed subsequently.

Abstract: A high etching selective layer and a light emitting structure are formed subsequently on a semiconductor substrate. Then, a p-type Ohmic contact layer and a metal substrate are formed subsequently on the light emitting structure. The semiconductor substrate and the high etching selective layer are removed. Next, an n-type electrode and a transparent conductive layer are formed adjacent to surface of the light emitting structure opposite to the metal layer.

Abstract: An electrode structure for a light-emitting element includes a first electrode and a second electrode. The first electrode has a plurality of first fingers paralleling with each other, a first connective part, and at least a first contact part. Each first finger has a first end and a second end. Pluralities of first ends connect to the first connective part. The first contact part interposes between any first end and the first connective part. The second electrode has a plurality of second fingers paralleling with each other, a second connective part, and at least a second contact part. Each second finger has a third end and a fourth end, and any second finger is between and parallels to any two first fingers. Pluralities of third ends connect to the second connective part. The second contact part interposes between any third end and the second connective part. The second electrode defines a plurality of hexagonal units among a plurality of second ends.

Abstract: A light-emitting device with improved optical efficiency is disclosed. A semiconductor substrate underlies active p-n junction layers, and has an internal scattering/reflecting surface near the bottom surface of the semiconductor substrate. Accordingly, the light originated at the active p-n junction layers is internally reflected from the internally curved reflecting surface, and substantially passes though the top surface of the semiconductor substrate.