Abstract: A wireless communication includes a control circuit and a receiver (RX) circuit. The control circuit obtains indicator information from another wireless communication system, identifies a transmitter (TX) and receiver (RX) packet delivery scenario as one of a packet overlapping scenario and a packet non-overlapping scenario according to the indicator information, and generates RX gain control information in response to the TX and RX packet delivery scenario. The RX circuit refers to the RX gain control information to set an RX gain used for receiving data.

Abstract: Semiconductor devices and methods of forming the same are provided. In an embodiment, a semiconductor device includes a first fin extending along a first direction, a second fin extending parallel to the first fin, and a gate structure over and wrapping around the first fin and the second fin, the gate structure extending along a second direction perpendicular to the first direction. The first fin bents away from the second fin along the second direction and the second fin bents away from the first fin along the second direction.

Abstract: A frame pool is disclosed including a frame assembly and a pool liner, the frame assembly including horizontal frame members and a vertical frame member coupled together via a T-shaped joint. The T-shaped joint may be constructed of plastic to facilitate attachment and detachment to the adjacent frame members and to resist galling and corrosion. The T-shaped joint may also be relatively small to improve the appearance and water containment of the frame pool.

Abstract: Sensing pixels each store a sensing voltage level. A method for driving the plurality of sensing pixels includes providing a plurality of readout scan signals to the plurality of sensing pixels, and providing a plurality of reset scan signals to the plurality of sensing pixels. One of the plurality of readout scan signals enables one of the plurality of sensing pixels to output the sensing voltage level stored in the one of the plurality of sensing pixels. One of plurality of reset scan signals resets the sensing voltage level stored in one of the plurality of sensing pixels. An nth reset scan signal of the plurality of reset scan signals is started behind an nth readout scan signal of the plurality of readout scan signals in time domain.

Abstract: A semiconductor device includes a substrate. The semiconductor device further includes a circuit layer over the substrate. The semiconductor device further includes a test line electrically connected to the circuit layer. The semiconductor device further includes a capacitor on the substrate. The capacitor includes a first conductor, wherein the first conductor is on a portion of the substrate exposed by the circuit layer. The capacitor further includes an insulator surrounding the first conductor.

Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer including molybdenum layers and silicon layers over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and performing a treatment to form a border region including molybdenum silicide in the reflective layer.

Abstract: A semiconductor structure includes a SiGe fin protruding from a substrate, where the SiGe fin includes a top portion having a first sidewall and a second sidewall and a bottom portion having a third sidewall and a fourth sidewall, and where a first transition region connecting the first sidewall to the third sidewall and a second transition region connecting the second sidewall to the fourth sidewall each have a tapered profile extending away from the first sidewall and the second sidewall, respectively, and a Si-containing layer disposed on the top portion of the SiGe fin, where a portion of the Si-containing layer on the first transition region extends away from the first sidewall by a first lateral distance and a portion of the Si-containing layer on the second transition region extends away from the second sidewall by a second lateral distance that is different from the first lateral distance.

Abstract: A semiconductor device includes a semiconductor substrate, at least one semiconductor fin and a gate stack. The semiconductor fin is disposed on the semiconductor substrate. The semiconductor fin includes a first portion, a second portion and a first neck portion between the first portion and the second portion. A width of the first portion decreases as the first portion becomes closer to the first neck portion, and a width of the second portion increases as the second portion becomes closer to a bottom surface of the semiconductor substrate. The gate stack partially covers the semiconductor fin.

Abstract: A water treatment system includes an ozone generator combined with an electrolytic chlorine generator in a compact, efficient and serviceable assembly. The system may include a modular and replaceable ozone generator, which allows a damaged or non-functional ozone generator to be quickly and efficiently replaced. In order to protect the ozone generator from damage, a fail-safe drain valve assembly may also be provided which will expel backflowing pool water before it is allowed to backflow into the ozone generator. The water treatment system may further include an insulated electrolytic chlorine generator that mitigates or eliminates current leakage for efficient operation.

Abstract: A water treatment system includes an ozone generator combined with an electrolytic chlorine generator in a compact, efficient and serviceable assembly. The system may include a modular and replaceable ozone generator, which allows a damaged or non-functional ozone generator to be quickly and efficiently replaced. In order to protect the ozone generator from damage, a fail-safe drain valve assembly may also be provided which will expel backflowing pool water before it is allowed to backflow into the ozone generator. The water treatment system may further include an insulated electrolytic chlorine generator that mitigates or eliminates current leakage for efficient operation.

Abstract: A method for labeling an image object and a circuit system are provided. In the method, an object classification method is used to segment an image into one or more regions. Each of the regions can be classified into one classification assigned with a classification label. A depth estimation method is used to estimate a depth of each pixel of the image. Whether or not the depth of the pixel matches the classification of the region to which the pixel belongs is determined. When the depth of the pixel matches the classification of the region, a post-processing process is performed on the image based on weights assigned to the regions according to the classification label of the region. Conversely, when the depth of the pixel does not match the classification of the region, the pixel is regarded as noise that does not require the post-processing process.

Abstract: A joint assembly (100) between multiple air chambers of an inflatable product (P). The joint assembly (100) may include a male component (102) coupled to a first air chamber and a female component (104) coupled to a second air chamber. When assembled, the multiple air chambers of the inflatable product may be in fluid communication with each other or with a multichannel air assembly configured to selectively inflate and/or deflate each chamber.

Abstract: The present invention provides a wireless communication method of an access point, wherein the wireless communication method comprises: generating a PPDU according to a traffic of the access point, wherein the PPDU includes a preamble and SIG field, a first data field, a midamble and SIG field and a second data field in sequence, the preamble and SIG field includes information of a first station and a first resource unit allocated to the first station, and the midamble and signal SIG field includes information of a second station and the first resource unit that is reallocated to the second station; transmitting the preamble and SIG field; using the first resource unit to transmit data corresponding to the first data field to the first station; transmitting the midamble and SIG field; and using the first resource unit to transmit data corresponding to the second data field to the second station.

Abstract: A video transmitting circuit and a signal delay compensation method thereof are provided. The video transmitting circuit transmits a specific signal through a first transmission path and a second transmission path to a video receiver during a calibration mode. In the calibration mode, a return detection circuit of the video transmitting circuit detects whether or not a first return signal transmitted through the first transmission path and a second return signal transmitted through the second transmission path have been received by the video transmitting circuit. The video transmitting circuit sets delay circuits serially connected in the first or second transmission path according to a detection result of the return detection circuit, such that the first return signal transmitted through the first transmission path and the second return signal transmitted through the second transmission path can synchronously arrive at the video receiver.

Abstract: Semiconductor devices and methods of forming the same are provided. In an embodiment, a semiconductor device includes a first fin extending along a first direction, a second fin extending parallel to the first fin, and a gate structure over and wrapping around the first fin and the second fin, the gate structure extending along a second direction perpendicular to the first direction. The first fin bents away from the second fin along the second direction and the second fin bents away from the first fin along the second direction.

Abstract: An ultra-reliable and low latency communications local breakout (URLLC-LBO) method and a URLLC-LBO method for a next generation radio access network (NG-RAN) are provided. The method includes: configuring a core network to establish a packet data unit (PDU) session between first user equipment (UE) and the core network; configuring the first UE to establish a URLLC service; configuring a near real-time RAN intelligent controller (near-RT RIC) to establish an F1-LBO routing process to set an LBO dedicated radio bearer (DRB) for the local URLLC service; configuring an F1-LBO virtual network function (VNF) module according to a traffic rule by the F1-LBO routing process, to establish a routing table through the F1-LBO VNF module, in which the routing table defines a relationship between a first location and a second location of the LBO DRB.

Abstract: A photomask and a method of manufacturing a photomask are provided. According to an embodiment, a method includes: providing a substrate; depositing a reflective layer over the substrate; depositing a capping layer over the reflective layer; depositing an absorption layer over the capping layer; and treating the reflective layer by a laser beam to form a border region. The borderer region has a reflectivity less than about 0.1%.

Abstract: A device includes: a first vertical stack of nanostructures over a substrate; a second vertical stack of nanostructures over the substrate; a first source/drain region abutting the first vertical stack of nanostructures; a second source/drain region abutting the second vertical stack of nanostructures; a first gate structure wrapping around the nanostructures of the first vertical stack; a second gate structure wrapping around the nanostructures of the second vertical stack; a dielectric layer over the first and second source/drain regions; and an isolation structure that extends from an upper surface of the dielectric layer to a level below upper surfaces of the first and second source/drain regions, the isolation structure being between the first source/drain region and the second source/drain region.

Abstract: A micro light-emitting diode includes a first stacked layer, a second stacked layer, a third stacked layer, a bonding layer, at least one etch stop layer, and a plurality of electrodes. The second stacked layer is disposed between the first stacked layer and the third stacked layer. The first stacked layer includes a first active layer. The second stacked layer includes a second active layer. The third stacked layer includes a third active layer. The bonding layer is disposed between the second stacked layer and the third stacked layer. The at least one etch stop layer is at least disposed between the first active layer and the second active layer. The plurality of electrodes are respectively electrically connected with the first stacked layer, the second stacked layer, and the third stacked layer. At least one electrode of the plurality of electrodes contacts the etch stop layer.

Abstract: A rearview mirror with display function includes a display structure layer, a rearview mirror structure layer, a plastic frame and an electrochromic material. The display structure layer includes a first transparent substrate, a display body layer and a transflective layer on opposite sides of the first transparent substrate. The rearview mirror structure layer is disposed on one side of the display structure layer, and includes a second transparent substrate, a ring-shaped shielding layer, a touch sensing layer, an insulating substrate, and a transparent electrode layer. The ring-shaped shielding layer is disposed around a third surface of the second transparent substrate, and the touch sensing layer covers the third surface and the ring-shaped shielding layer. The ring-shaped shielding layer is electrically insulated from the touch sensing layer. The plastic frame, the transflective layer and the transparent electrode layer define an accommodating space.