Patents by Inventor Yuan-Hsun Wu

Yuan-Hsun Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040029394
    Abstract: A method and a structure for preventing wafer edge defocus. The method comprises the following steps. First, a wafer is provided. Next, an anti-reflect layer is formed on the wafer. Parts of the anti-reflect layer are removed to expose the rim of the wafer surface. Finally, a photoresist layer is blanketed on the anti-reflect layer and the rim of the wafer.
    Type: Application
    Filed: December 5, 2002
    Publication date: February 12, 2004
    Applicant: NANYA TECHNOLOGY CORPORATION
    Inventor: Yuan-Hsun Wu
  • Publication number: 20040013955
    Abstract: A best focus determining method. First, a test mask is provided, wherein the test mask comprises a transparent substrate and an opaque layer covering parts of the transparent substrate to define a first transparent area with 0° phase and a second transparent area with 90° phase. The sizes of the two transparent areas are the same. Next, a light source is provided and transmits the test mask to perform an exposure. Then, a first image corresponding to the first transparent area and a second image corresponding to the second transparent area are formed. The sizes of the first and second images are measured to ensure the best focus possible.
    Type: Application
    Filed: December 5, 2002
    Publication date: January 22, 2004
    Applicant: NANYA TECHNOLOGY CORPORATION
    Inventor: Yuan-Hsun Wu
  • Patent number: 6654703
    Abstract: A method for estimating repair accuracy of a mask shop. The method includes the steps of providing a mask having a light-shielding layer with a pattern of a plurality of lines, each of which has a defect, using the mask shop to repair the defects, measuring first widths of the lines where the defects are repaired and second and third widths of the lines aside where the defects are repaired, and calculating ratios of mean values of the second and third widths to the first widths for estimating the repair accuracy.
    Type: Grant
    Filed: November 8, 2001
    Date of Patent: November 25, 2003
    Assignee: Nanya Technology Corporation
    Inventor: Yuan-Hsun Wu
  • Publication number: 20030180629
    Abstract: A mask and method for contact hole exposure. First, a mask including a transparent substrate, a 180° phase shift layer installed on the transparent substrate to define a series of patterns having contact hole transparent areas with 0° phase, and at least one 0° phase opening installed in the phase shift layer between the adjacent contact hole transparent areas is provided. Then, an exposure is performed by transmitting a light source, such as deep ultraviolet (UV), extreme ultraviolet, or X-ray, through the mask, so as to eliminate high degree diffraction waves by the 0° phase opening.
    Type: Application
    Filed: December 3, 2002
    Publication date: September 25, 2003
    Applicant: Nanya Technology Corporation
    Inventor: Yuan-Hsun Wu
  • Publication number: 20030181033
    Abstract: A mask and method for contact hole exposure. First, a mask including a transparent substrate, a phase shift layer installed on the transparent substrate to define a series of patterns having contact hole areas set in array, an a plurality of metal lines installed on the phase shift layer between the adjacent contact hole areas is provided. Then, an exposure is performed by transmitting a light source, such as deep ultraviolet (UV), extreme ultraviolet, or X-ray, through the mask after the metal lines absorb high degree diffraction waves.
    Type: Application
    Filed: July 18, 2002
    Publication date: September 25, 2003
    Applicant: NANYA TECHNOLOGY CORPORATION
    Inventor: Yuan-Hsun Wu
  • Publication number: 20030180666
    Abstract: A method of forming a patterned photoresist layer. First, an anti-reflection coating layer is formed on a substrate. Next, a first bake is performed. A photoresist layer is then formed on the anti-reflection coating layer. Exposure is performed. A second bake is performed, wherein the temperature difference between the first bake and the second bake is about 35° C.˜55 ° C. Finally, development is performed. The patterned photoresist layer features have perfect profiles in accordance with this invention.
    Type: Application
    Filed: July 10, 2002
    Publication date: September 25, 2003
    Applicant: NANYA TECHNOLOGY CORPORATION
    Inventors: Yuan-Hsun Wu, Wen-Bin Wu, Yung Long Hung, Ya Chih Wang
  • Publication number: 20030117605
    Abstract: Apparatus and method for contact hole exposure. First, an exposure apparatus including a light source and a lens comprising a central transparent area and at least one dummy transparent area is provided. Next, a mask having a plurality of contact hole patterns is provided. Finally, exposure is performed to transmit light from the light source through the mask. Additionally, the exposure apparatus comprises a light source producing light and a lens having a central transparent area and at least one dummy transparent area transmitting the light for exposure.
    Type: Application
    Filed: June 20, 2002
    Publication date: June 26, 2003
    Applicant: NANYA TECHNOLOGY CORPORATION
    Inventor: Yuan-Hsun Wu
  • Publication number: 20030065475
    Abstract: The present invention provides a method for estimating repair accuracy of a mask shop. The method has the steps of providing a mask having a light-shielding layer with a pattern of a plurality of lines, each of which has a defect, using the mask shop to repair the defects, measuring first widths of the lines where the defects are repaired and second and third widths of the lines aside where the defects are repaired, and calculating ratios of means of the second and third widths to the first widths for estimating the repair accuracy.
    Type: Application
    Filed: November 8, 2001
    Publication date: April 3, 2003
    Applicant: NANYA TECHNOLOGY CORPORATION
    Inventor: Yuan-Hsun Wu
  • Publication number: 20030063273
    Abstract: The present invention provides a method for estimating repair accuracy of a mask shop. The method comprises the steps of providing a mask having a light-shielding layer with a pattern of a plurality of lines, each of which has a defect, using the mask shop to repair the defects. Contaminated areas are formed in the vicinity of areas where the defects are repaired, measuring first light intensities of the contaminated areas, and second and third light intensities of two sides of the contaminated areas, and calculating ratios of means of the second and third light intensities to the first light intensities to estimate the repair accuracy.
    Type: Application
    Filed: November 6, 2001
    Publication date: April 3, 2003
    Applicant: NANYA TECHNOLOGY CORPORATION
    Inventor: Yuan-Hsun Wu
  • Publication number: 20030049946
    Abstract: An assist pattern design method for lithography C/H process that includes the following steps: determining the exposure wavelength of a lithography machine light source; determining a minimum resolution line width by the sigma, process integration parameter and numerical aperture of the lithography machine; recovering the minimum line width on a mask according to the miniature scale of the determined minimum resolution line width; and using a line pattern smaller than the recovered minimum line width to connect multiply C/H patterns on the mask.
    Type: Application
    Filed: March 28, 2002
    Publication date: March 13, 2003
    Applicant: NANYA TECHNOLOGY CORPORATION
    Inventor: Yuan-Hsun Wu