Abstract: A display includes a polygonal display region and a plurality of non-display portions. The non-display portions are coupled to side edges of the display region in a one-to-one correspondence. At least two of the non-display portions are bent to a back side of the display region. When the non-display portions bent to the back side include adjacent non-display portions, there is an opening between two adjacent non-display portions.

Abstract: Disclosed are a method and system for evaluating sonar self-noise at a ship design stage. The method includes: building a ship structure full-scale geometric simulation model; acquiring loss factors and sonar transducer space outfitting acoustic absorption coefficient material parameters; acquiring mechanical excitation, hydrodynamic excitation, and propeller excitation; inputting the loss factors and the sonar transducer space outfitting acoustic absorption coefficient material parameters into an established statistical energy evaluation model, and applying a mechanical excitation to a face plate of foundation of the built ship structure full-scale geometric simulation model, applying a hydrodynamic excitation to the surface of a ship hull, and applying a propeller excitation to a stern shaft to perform calculation of sonar self-noise of a ship to obtain total spectral density level of the sonar self-noise; and evaluating spectral density level calculation results by index requirements.

Abstract: Disclosed are a method and system for evaluating sonar self-noise at a ship design stage. The method includes: building a ship structure full-scale geometric simulation model; acquiring loss factors and sonar transducer space outfitting acoustic absorption coefficient material parameters; acquiring mechanical excitation, hydrodynamic excitation, and propeller excitation; inputting the loss factors and the sonar transducer space outfitting acoustic absorption coefficient material parameters into an established statistical energy evaluation model, and applying a mechanical excitation to a face plate of foundation of the built ship structure full-scale geometric simulation model, applying a hydrodynamic excitation to the surface of a ship hull, and applying a propeller excitation to a stern shaft to perform calculation of sonar self-noise of a ship to obtain total spectral density level of the sonar self-noise; and evaluating spectral density level calculation results by index requirements.

Abstract: Composite particles comprising a hydrophobic dye and an amphiphilic block copolymer encapsulating the dye are disclosed. The dye exhibits absorbance peaks at one or more points in the ultraviolet, visible, or infrared regions of the electromagnetic spectrum. The particles are thus useful in optical applications, such as the preparation of contact lenses that screen out harmful radiation. In select embodiments, the dye is Zinc (II) 5, 10, 15, 20-(tetraphenyl) porphyrin and the copolymer is an acrylate or PEO copolymer that has been crosslinked.

Abstract: A zero-valent metal polymeric complex supporter (ZVM-PCS) is disclosed. PCS possesses porous surface and internal coralloid-like channel structure that can accommodate high amount of iron-containing materials and derivatives thereof. The surface pore size, porosity, hydrophilicity and internal coralloid-like channel structure of PCS can be tailored through the manufacturing process, with which PCS can be functioned as a regulator for the releasing of produced hydrogen, and also control the adsorption and reactions toward heavy metals and chlorinated volatile organic compounds in water. The released hydrogen from the ZVM-PCS can be applied to anaerobic bioremediation. Moreover, the ZVM-PCS can be developed as the filter materials that can be installed in a column or any storage for water and wastewater treatment, or even in a groundwater cut-off barrier for the cleanup of contamination.

Abstract: A complex fuel cell stack with hydrogen storage unit is introduced. Through the new configuration of the PEM fuel cell stack, no cooling system and cooling fluid is needed for the fuel cell stack, since hydrogen storage vessel can act as a heat sink to protect the expensive catalyst layer of the MEA of the fuel cell away from over-heated and damaged. In addition, the waste heat generated from the operation of the fuel cells can aid in release of hydrogen from hydrogen storage alloys inside the hydrogen storage vessel.

Abstract: A complex fuel cell stack with hydrogen storage unit is introduced. Through the new configuration of the PEM fuel cell stack, no cooling system and cooling fluid is needed for the fuel cell stack, since hydrogen storage vessel can act as a heat sink to protect the expensive catalyst layer of the MEA of the fuel cell away from over-heated and damaged. In addition, the waste heat generated from the operation of the fuel cells can aid in release of hydrogen from hydrogen storage alloys inside the hydrogen storage vessel.

Abstract: An epitaxy structure of a light emitting element includes a gallium nitride substrate, an N-type gallium nitride layer, a quantum well unit, and a P-type gallium nitride layer. The gallium nitride substrate includes a gallium nitride buffer layer, a gallium nitride hexagonal prism, and a gallium nitride hexagonal pyramid. The gallium nitride hexagonal prism extends from the gallium nitride buffer layer along an axis. The gallium nitride hexagonal pyramid extends from the gallium nitride hexagonal prism along the axis and gradually expands to form a hexagonal frustum. The N-type gallium nitride layer is located on the gallium nitride hexagonal pyramid. The quantum well unit includes an indium gallium nitride layer located on the N-type gallium nitride layer and a gallium nitride layer located on the indium gallium nitride layer. The P-type gallium nitride layer is located on the gallium nitride layer.

Abstract: A zero-valent metal polymeric complex supporter (ZVM-PCS) is disclosed. PCS possesses porous surface and internal coralloid-like channel structure that can accommodate high amount of iron-containing materials and derivatives thereof. The surface pore size, porosity, hydrophilicity and internal coralloid-like channel structure of PCS can be tailored through the manufacturing process, with which PCS can be functioned as a regulator for the releasing of produced hydrogen, and also control the adsorption and reactions toward heavy metals and chlorinated volatile organic compounds in water. The released hydrogen from the ZVM-PCS can be applied to anaerobic bioremediation. Moreover, the ZVM-PCS can be developed as the filter materials that can be installed in a column or any storage for water and wastewater treatment, or even in a groundwater cut-off barrier for the cleanup of contamination.

Abstract: An epitaxy structure of a light emitting element includes a gallium nitride substrate, an N-type gallium nitride layer, a quantum well unit, and a P-type gallium nitride layer. The gallium nitride substrate includes a gallium nitride buffer layer, a gallium nitride hexagonal prism, and a gallium nitride hexagonal pyramid. The gallium nitride hexagonal prism extends from the gallium nitride buffer layer along an axis. The gallium nitride hexagonal pyramid extends from the gallium nitride hexagonal prism along the axis and gradually expands to form a hexagonal frustum. The N-type gallium nitride layer is located on the gallium nitride hexagonal pyramid. The quantum well unit includes an indium gallium nitride layer located on the N-type gallium nitride layer and a gallium nitride layer located on the indium gallium nitride layer. The P-type gallium nitride layer is located on the gallium nitride layer.

Abstract: A method for preparing a scandium-doped hafnium oxide film, includes preparing a hafnium target having scandium granules distributed on a peripheral surface thereof; and proceeding a sputtering process to form a scandium-doped hafnium oxide film on a substrate, wherein the scandium doping of the scandium-doped hafnium oxide film is in the range of 3-13%. Such scandium-doped hafnium oxide film is able to be used as an oxide layer in semiconductor element which effectively suppresses the current leakage and reduces the dimension of the semiconductor element.

Abstract: An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer.

Abstract: An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer.

Abstract: A method for preparing scandium-doped hafnium oxide film includes preparing a hafnium target having scandium granules distributed on a peripheral surface thereof; and proceeding a sputtering process to form a scandium-doped hafnium oxide film on a substrate, wherein the scandium doping of the scandium-doped hafnium oxide film is in the range of 3-13%. Such scandium-doped hafnium oxide film is able to be used as an oxide layer in semiconductor element which effectively suppresses the current leakage and reduces the dimension of the semiconductor element.

Abstract: An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer. A method for manufacturing the III-nitride quantum well structure and a light-emitting unit having a plurality of III-nitride quantum well structures are also proposed.

Abstract: A homo-material heterophased quantum well includes a first structural layer, a second structural layer and a third structural layer. The second structural layer is sandwiched between the first and third structural layers. The first structural layer, second structural layer and third structural layer are formed by growing atoms of a single material in a single growth direction. The energy gap of the second structural layer is smaller than that of the first and third structural layers.

Abstract: A manufacturing method for three-dimensional GaN epitaxial structure comprises a disposing step, in which a substrate of LiAlO2 and a source metal of Ga are disposed inside an vacuum chamber. An exposing step is importing N ions in plasma state and generated by a nitrogen source into the chamber. A heating step is heating up the source metal to generate Ga vapor. A growing step is forming a three-dimensional GaN epitaxial structure with hexagonal micropyramid or hexagonal rod having a broadened disk-like surface on the substrate by reaction between the Ga vapor and the plasma state of N ions.

Abstract: An III-nitride quantum well structure includes a GaN base, an InGaN layer and an InGaN covering layer. The GaN base includes a GaN buffering layer, a GaN post extending from the GaN buffering layer, and a GaN pyramid gradually expanding from the GaN post to form a mounting surface. The InGaN layer includes first and second coupling faces. The first coupling face is coupled with the mounting surface. The GaN covering layer includes first and second coupling faces. The first coupling face of the GaN covering layer is coupled with the second coupling face of the InGaN layer. A method for manufacturing the III-nitride quantum well structure and a light-emitting unit having a plurality of III-nitride quantum well structures are also proposed.

Abstract: A polymeric complex supporter for controlling oxygen-released compounds (PCS-ORCs) and a method for manufacturing the same is disclosed. PCS possesses a porous surface and internal coralloid-like channel structure that can accommodate ORCs with a high ratio (up to 92 wt %) to polymers. In applications, the PCS-ORCs can be shaped as various types and be coupled with other solids that could be used as delivery tools. As PCS-ORCs is delivered into a water-containing environment, water molecules can diffuse into the internal channels through the surface pores and then react with ORCs. Due to the tunable structure properties of PCS, the produced oxygen can be release out through the surface pores for one to six months long. In comparison with powder-type ORCs, PCS-ORCs can exhibit better application potentials in terms of time-release technology, oxygen delivery and environmental responsibility.

Abstract: A zero-valent metal polymeric complex supporter (ZVM-PCS) is disclosed. The PCS possesses porous surface and internal coralloid-like channel structure that can accommodate high amount of iron-containing materials and derivatives thereof. The surface pore size, porosity, hydrophilicitv, and internal coralloid-like channel structure of PCS can be tailored through the manufacturing process, with which PCS can be functioned as a regulator for the releasing of produced hydrogen, and also control the adsorption and reactions toward heavy metals and chlorinated volatile organic compounds in water. The hydrogen released from the ZVM-PCS can be applied to anaerobic bioremediation. Moreover, the ZVM-PCS can be filter materials that can be installed in a column or any storage for water and wastewater treatment, or even in a groundwater cut-off barrier for the cleanup of contamination.