Abstract: A method of performing a power on sequence for a flash memory includes applying device voltage to the flash memory and loading nonvolatile memory data and nonvolatile memory complementary data to a read data register and a read complementary data register, respectively. The nonvolatile memory data and the nonvolatile memory complementary data are compared with the read data register and the read complementary data register during the power on sequence, e.g., after initial power up or power on reset (POR). When the comparison determines a mismatch, the loading of the nonvolatile memory data and the nonvolatile memory complementary data to the read data register and the read complementary data register, respectively, is repeated.

Abstract: A nitride trapping memory device includes a comparator, a bias unit, a memory cell, a cycling cell, a compensation cell and a control unit. The comparator has a reference voltage. The bias unit is for outputting a bias voltage to the comparator, and the comparator outputs a bit value according to comparison of the bias voltage and the reference voltage. The memory cell is connected to the bias unit via a first switch. The cycling cell is connected to the bias unit via a second switch. The compensation cell is connected to the bias unit via a third switch. The control unit is for controlling the cycling cell and the compensation cell according to the bit value.

Abstract: A method of performing a power on sequence for a flash memory includes applying device voltage to the flash memory and performing an error bit check on at least one memory cell in the flash memory during initial power up. The at least one memory cell in the flash memory is read only after the error bit check determines that the device voltage is stable. The data read from the at least one memory cell is loaded to an information register.

Abstract: A method of performing a power on sequence for a flash memory includes applying device voltage to the flash memory and performing an error bit check on at least one memory cell in the flash memory during initial power up. The at least one memory cell in the flash memory is read only after the error bit check determines that the device voltage is stable. The data read from the at least one memory cell is loaded to an information register.

Abstract: A method of fabricating a vertical thin film transistor (vertical TFT) is disclosed, wherein a shadow mask is used to fabricate the TFT device in vertical structure. First, a metal layer is formed, which serves as ribs and a gate layer. Next, a shadow mask is disposed on the gate layer. Afterwards, the shadow mask is used as a mask to form a source layer, an organic semiconductor layer and a drain layer. Thus, the process is simplified. Since no photolithography process is required, and therefore damage of the organic semiconductor layer is avoided and a vertical TFT with desired electrical characteristics may be obtained.

Abstract: A nitride read-only memory (NROM) device includes a comparator, a bias unit, a memory cell, a cycling cell, a compensation cell and a control unit. The comparator has a reference voltage. The bias unit is for outputting a bias voltage to the comparator, and the comparator outputs a bit value according to comparison of the bias voltage and the reference voltage. The memory cell is connected to the bias unit via a first switch. The cycling cell is connected to the bias unit via a second switch. The compensation cell is connected to the bias unit via a third switch. The control unit is for controlling the cycling cell and the compensation cell according to the bit value.

Abstract: An ultra cycling nitride read only memory (NROM) device is coupled to a NROM array such that both bits of the ultra cycling NROM device will be erased when all NROM devices of the NROM array are erased. The ultra cycling NROM device is then programmed at its right bit. A threshold voltage difference will be obtained for the ultra cycling NROM device for the un-programmed left bit. Next, a cycling number is obtained based on the threshold voltage difference for the ultra cycling NROM device. A threshold voltage shift can be found based on the cycling number for the NROM array. Finally, an erase voltage will be calculated according to the threshold voltage shift for the NROM array. If the NROM array is programmed again, the erase voltage will be applied to un-programmed NROM devices of the NROM array to further reduce the threshold voltages.

Abstract: An improved structure of a container for making tea or coffee is essentially comprised of a body, a bottom lid and a separation container; the body containing an accommodation space with an opening at one end or two opening respectively on both ends, and the opening being covered by the bottom lid; the bottom lid being having a locking unit; an inner thread being provided on the inner wall of the bottom lid, a sealing member being disposed between the locking unit and the inner wall of the bottom lid; and the separation container containing a space having one end disposed with a connection part incorporated to the locking unit from the bottom lid to secure the separation container.

Abstract: A projector apparatus has an electrically conductive housing that includes a lower housing part and an upper housing part coupled to the lower housing part for covering the lower housing part, an internal projector module mounted in the housing, a first grounding component provided between the internal projector module and the upper housing part so as to establish a first grounding path between the internal projector module and the housing, and a second grounding component provided between the internal projector module and the lower housing part so as to establish a second grounding path between the internal projector module and the housing.

Abstract: A nitride read-only memory (NROM) device includes a comparator, a bias unit, a memory cell, a cycling cell, a compensation cell and a control unit. The comparator has a reference voltage. The bias unit is for outputting a bias voltage to the comparator, and the comparator outputs a bit value according to comparison of the bias voltage and the reference voltage. The memory cell is connected to the bias unit via a first switch. The cycling cell is connected to the bias unit via a second switch. The compensation cell is connected to the bias unit via a third switch. The control unit is for controlling the cycling cell and the compensation cell according to the bit value.

Abstract: An ultra cycling nitride read only memory (NROM) device is coupled to a NROM array such that both bits of the ultra cycling NROM device will be erased when all NROM devices of the NROM array are erased. The ultra cycling NROM device is then programmed at its right bit. A threshold voltage difference will be obtained for the ultra cycling NROM device for the un-programmed left bit. Next, a cycling number is obtained based on the threshold voltage difference for the ultra cycling NROM device. A threshold voltage shift can be found based on the cycling number for the NROM array. Finally, an erase voltage will be calculated according to the threshold voltage shift for the NROM array. If the NROM array is programmed again, the erase voltage will be applied to un-programmed NROM devices of the NROM array to further reduce the threshold voltages.

Abstract: A cup for a user to directly drink the beverage in the cup. The cup includes a main body and an isolating member disposed in the main body for dividing the interior of the cup into two isolated spaces. The isolating member serves to stop the beverage material, while permitting the beverage to flow through the isolating member from one isolated space to the other.

Abstract: This invention provides a laser trimming method for tuning the frequency of a spiral resonator, and for improving the characteristics of a high temperature superconductor filter comprised of high temperature superconductor spiral resonators, by tuning the individual high temperature superconductor spiral resonators. This invention also provides a method for tuning the resonance frequency of a high temperature superconductor planar coil. This invention also provides a laser ablation process for creating high temperature superconductor circuit elements.

Abstract: A method and apparatus for generating search results including searching by subdomain and providing sponsored results by subdomain is provided. A search system according to embodiments of the present invention analyzes search queries to determine if they are to be routed to subdomains and presents results include sponsored hits sponsored on a subdomain by subdomain basis.

Abstract: A container has a body having a receiving space therein and a first opening and a second opening at opposite sides of the receiving space. The first opening has a diameter smaller than that of the second opening. A first cap is detachably secured to the body to close the first opening. On an interior side of the first cap has a first inner threaded section, a pad, which is made of a soft material for waterproof, a disk having a post and an aperture and a second inner threaded section. A filter cup is detachably mounted in the received space of the body adjacent to the second opening. The filter cup has an opening facing the second opening of the body and a protrusion on an exterior surface thereof to position the filter cup at the second opening of the body.

Abstract: A container for making tea includes a body having a receiving space defined therein, and extending therethrough to define a first opening in a top and a second opening in a bottom. A resilient pad is attached to the top of the body for closing the first opening. A seam is centrally defined in the resilient pad for exhausting expanding hot air in the body. A cap is detachably mounted to the top of the body to hold the resilient pad in place. The cap has a through hole centrally defined therein and aligning with the seam in the resilient pad. A filter cup is inversely received in the receiving space corresponding to the second opening for containing tea leaves. A cover is detachably mounted to the bottom of the body for closing the second opening and holding the filter cup in place.

Abstract: High temperature superconductor mini-filters and mini-multiplexers utilize self-resonant spiral resonators and have very small size and very low cross-talk between adjacent channels.

Abstract: This invention relates generally to cryogenic devices and, more particularly, to cryogenic devices of very small size based on superconducting elements, low thermal transmission interconnects and low dissipated power semiconductor.

Abstract: This invention relates generally to cryogenic devices and, more particularly, to cryogenic devices of very small size based on superconducting elements, low thermal transmission interconnects and low dissipated power semiconductor