Abstract: A light source assembly is provided, including a substrate; a light-emitting element disposed on the substrate; and an optical film at least partially overlapped with the substrate. A diffuser film is at least partially overlapped with the optical film, wherein a haze of the diffuser film is greater than 85%, and a thickness of the diffuser film ranges from 0.04 mm to 0.35 mm. The optical film and the diffuser film are capable of transmitting at least a part of light emitted from the light-emitting element.

Abstract: A radar system transmits pulses towards a target and receives pulses reflected back therefrom. Based on samples (of the received pulses) corresponding to a CPI, a first 2D matrix having a slow-time index and a fast-time index is generated. A slow-time FFT is performed to convert the slow-time index to a Doppler bin index to produce a second 2D matrix having the Doppler bin index and the fast-time index. Thereafter, a 1D interpolation is performed along the Doppler bin index to produce a third 2D matrix having a Velocity bin index and the fast-time index. Thereafter, a fast-time FFT is performed to convert the fast-time index to a Range bin index to produce a fourth 2D matrix having the Velocity bin index and a Range bin index. A distance to and a velocity of a target is determined based on the fourth 2D matrix.

Abstract: Various embodiments include methods and systems having detection apparatus operable to cancel or reduce leakage signal originating from a source signal being generated and transmitted from a transmitter. A leakage cancellation signal can be generated digitally, converted to an analog signal, and then subtracted in the analog domain from a received signal to provide a leakage-reduced signal for use in detection and analysis of objects. A digital cancellation signal may be generated by generating a cancellation signal in the frequency domain and converting it to the time domain. Optionally, an estimate of a residual leakage signal can be generated and applied to reduce residual leakage remaining in the leakage-reduced signal. Additional apparatus, systems, and methods can be implemented in a variety of applications.

Abstract: A method of patterning a semiconductor layer includes the following steps. The semiconductor layer is formed on a substrate. A photoresist layer is formed on the semiconductor layer. The photoresist layer is patterned to form an opening exposing an exposed region of the semiconductor layer. The exposed region of the semiconductor layer is dissolved with a solution to pattern the semiconductor layer, in which the solution includes a first organic solvent and a second organic solvent. The solubility of the semiconductor layer in the first organic solvent is greater than 1 mg/mL, and the solubility of the semiconductor layer in the second organic solvent is less than or equal to 1 mg/mL.

Abstract: In one aspect, the disclosure relates to cooling films comprising a substrate and one or more cooling materials deposited on the substrate. The disclosed cooling films can be used to prepare the disclosed cooling masterbatch materials. The disclosed cooling masterbatch materials can be used to prepare disclosed cooling yarns. The one or more cooling materials deposited on the substrate of a disclosed cooling film, dispersed in a disclosed cooling masterbatch material, or in disclosed cooling yarn are nano-sized particles. In still further aspects, the present disclosure pertains to a fabric comprising a disclosed cooling yarn. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.

Abstract: In a method of pattern formation information including a pattern size on a reticle is received. A width of an EUV radiation beam is adjusted in accordance with the information. The EUV radiation beam is scanned on the reticle. A photo resist layer is exposed with a reflected EUV radiation beam from the reticle. An increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width is greater when the width before adjustment is W1 compared to an increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width when the width before adjustment is W2 when W1>W2.

Abstract: Methods, systems, and apparatus for gradient-based quantum assisted Hamiltonian learning. In one aspect, a method includes obtaining, by a classical processor, multiple experimental data points, wherein each experimental data point is generated according to a Hamiltonian comprising parameters with unknown values; learning, by the classical processor, values of the parameters, comprising iteratively adjusting, by the classical processor and until predetermined completion criteria are met, estimated values of the parameters to minimize a cost function, wherein the cost function is dependent on the multiple experimental data points and at each iteration derivatives of the cost function with respect to respective estimated values of the parameters for the previous iteration are computed using a quantum computer.

Abstract: In a method of pattern formation information including a pattern size on a reticle is received. A width of an EUV radiation beam is adjusted in accordance with the information. The EUV radiation beam is scanned on the reticle. A photo resist layer is exposed with a reflected EUV radiation beam from the reticle. An increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width is greater when the width before adjustment is W1 compared to an increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width when the width before adjustment is W2 when W1>W2.

Abstract: A method of visible-light photocatalysis combined with ClO2 oxidation for high efficient removal of organic pollutants in the wastewater, includes that i) the pH of the organic wastewater is adjusted to a constant value; the visible light photocatalysts are added to wastewater with full stirring to reach the adsorption equilibrium; (ii) turning on the Xenon lamp and adjust the distance between the light source and the liquid surface; chlorite is added to the system to reach a concentration and the reaction remained at a constant temperature with adequate stirring to achieve the degradation of organic pollutants.

Abstract: Embodiments of this disclosure provide a system and method for wireless communication and wireless sensing in a low-cost common transceiver structure. In particular, the common transceiver structure may have a common digital-to-analog converter (DAC) configured to convert a digital wireless communication signal and a digital wireless sensing signal into an analog wireless communication signal and an analog wireless sensing signal, respectively. The common transceiver may also have a common transmitting antenna configured to transmit the analog wireless communication signal and the analog wireless sensing signal.

Abstract: The present invention relates to an ethylene-vinyl alcohol copolymer composition, a single-layer film and a multilayer structure containing the same. Said ethylene-vinyl alcohol copolymer composition includes an ethylene-vinyl alcohol copolymer, an antioxidant, and a fluorine-containing compound; and the ratio of the antioxidant content to the fluorine content is 0.5 to 65. Thereby, the film containing said ethylene-vinyl alcohol copolymer composition not only has good heat resistance, but also can avoid the situation that a large number of gels are generated during the preparation process.

Abstract: A tool holder having force sensors includes a first connection portion, a second connection portion, a first sensing portion, a second sensing portion, at least one first force sensor and at least one second force sensor. The first connection portion connects a cutting tool along an axis. The second connection portion connects a spindle along the axis. The first sensing portion having at least one first hole connects the first connection portion along the axis. The second sensing portion having at least one second hole connects the second connection portion and the first sensing portion. The first force sensor disposed in the first hole is to sense a torsional force. The second force sensor disposed in the second hole is to sense a bending force. The first sensing portion has a bending stiffness greater than that of the second sensing portion.

Abstract: A microelectromechanical apparatus includes a base and a thin film including a stationary part disposed on the base, a peripheral part, a central part surrounded by the peripheral part, and a first and second elastic part. The first elastic part is connected to the stationary part and the peripheral part. The second elastic part is connected to the peripheral part and the central part. When low frequency signal is input to a first electrode of the first elastic part, the peripheral part and the and the central part respectively vibrate with a first and second low-frequency amplitudes. When high-frequency signal is input to a second electrode of the second elastic part, the peripheral part and the central part respectively vibrate with a first and second high-frequency amplitudes. A difference between the first and second low-frequency amplitudes is smaller than a difference between the first and second high-frequency amplitudes.

Abstract: A method for measuring steam pressure is provided, in which a steam pressure graph plotted according to temperature and strain is provided, so that the user can look up the steam pressure graph to know the steam pressure value inside a target object and determine whether there is a steam leakage in the target object.

Abstract: An electronic package is provided in which an electronic module and a heat dissipation structure combined with the electronic module are disposed on a carrier structure, and at least one adjustment structure is coupled with the heat dissipation structure and located around the electronic module. Therefore, the adjustment structure disperses thermal stress to avoid warpage of the electronic module.

Abstract: Embodiments of the present disclosure provide a detection circuit for a laser fault injection attack on a chip and a security chip. The detection circuit includes a first capacitor, a second capacitor, a first switch, a second switch, a photosensitive element, a first NMOS transistor, and a second NMOS transistor. A drain of the first NMOS transistor is configured to output a first voltage signal, and a drain of the second NMOS transistor is configured to output a second voltage signal. The first voltage signal and the second voltage signal are configured to indicate that the chip is attacked by laser fault injection, thereby realizing detection of the laser fault injection attack, and ensuring the robustness and security of the chips.

Abstract: A two-dimensional electronic component includes a substrate; an artificial two-dimensional (2D) material disposed on the substrate; and a first metallic electrode disposed on the artificial 2D material. The artificial 2D material includes a layered atomic structure including a middle atomic layer, a lower atomic layer disposed on a lower surface of the middle atomic layer, and an upper atomic layer disposed on an upper surface of the middle atomic layer respectively. The upper atomic layer and the first metallic electrode are attracted together at a junction therebetween by metallic bonding.

Abstract: A method for atomically manipulating an artificial two-dimensional material includes providing a first artificial two-dimensional (2D) material having a layered atomic structure; placing the first artificial 2D material in a vacuumed reactive chamber; using plasma to remove an atomic layer on one surface of the first artificial 2D material to expose unsaturated compounds; introducing heterogeneous atoms into the vacuumed reactive chamber, the heterogeneous atoms being different from atoms on the other surface of the first artificial 2D material; and binding the heterogeneous atoms with the unsaturated compounds to form a second artificial 2D material having two heterogeneous junctions.

Abstract: An artificial two-dimensional (2D) material includes a layered atomic structure including a middle atomic layer, a lower atomic layer, and an upper atomic layer. The lower and upper atomic layers are disposed on lower and upper surfaces of the middle atomic layer respectively. The middle atomic layer is a 2D planar atomic structure formed of a transition metal. The lower and upper atomic layers are a 2D planar atomic structure formed of heterogeneous atoms. Atoms of the layered atomic structure are bound by chemical bonding.

Abstract: The disclosure describes the implementation of automated techniques for optimizing quantum circuits of the size and type expected in quantum computations that outperform classical computers. The disclosure shows how to handle continuous gate parameters and report a collection of fast algorithms capable of optimizing large-scale-scale quantum circuits. For the suite of benchmarks considered, the techniques described obtain substantial reductions in gate counts. In particular, the techniques in this disclosure provide better optimization in significantly less time than previous approaches, while making minimal structural changes so as to preserve the basic layout of the underlying quantum algorithms.