Abstract: Systems and methods for automatic correction of drift between inspection and design for massive pattern searching are disclosed herein. Defects are identified in a scan of a wafer. The defects are associated with tool coordinates. An SEM review tool captures centered images of the defects. The SEM review tool is aligned with the wafer using design polygons in an imported design file. Design coordinates are exported and used to define patterns of interest and identifying locations of those patterns of interest.

Abstract: Systems and methods of instant-messaging bot for robotic process automation (RPA) and robotic textual-content extraction from digital images include a chatbot application, a software RPA manager, and an instant-messaging (IM) platform, all built for an enterprise. The enterprise IM platform is connected to one or more public IM platforms over the Internet. The RPA manager contains multiple modules of enterprise workflows and receives instructions from the enterprise chatbot for executing individual workflows. The system allows enterprise users connected to the enterprise IM platform, and external users connected to the public IM platforms, to use instant messaging to initiate enterprise workflows that are automated with the help of the enterprise chatbot and delivered via instant messaging. Furthermore, textual-content extraction from digital images is incorporated in the RPA manager as an enterprise workflow, and provides improved convolutional neural network (CNN) methods for textual-content extraction.

Abstract: A method of concurrently programming a memory. Various methods include: applying a non-negative voltage on a first bit line coupled to a first memory cell; applying a negative voltage on a second bit line coupled to a second memory cell, where the negative voltage is generated using triple-well technology; then applying a programming pulse to the first and second memory cells concurrently; and in response, programming the first and second memory cells to different states. The methods also include applying a quick pass write operation to the first and second memory cells, by: applying a quick pass write voltage to the first bit line coupled to the first memory cell, where the quick pass write voltage is higher than the non-negative voltage; applying a negative quick pass write voltage to the second bit line coupled to the first memory cell, where the negative quick pass write voltage is generated using triple-well technology.

Abstract: A method reading memory using bi-directional sensing, including programming first memory cells coupled to a first word-line using a normal programming order; programming second memory cells coupled to a second word-line using a normal programming order; reading data from the first memory cells by applying a normal sensing operation to the first word-line; and reading data from the second memory cells by applying a reverse sensing operation to the second word-line. Methods also include receiving an error associated with reading data from the first memory cells; and then reading the data from the first memory cells by applying a reverse sensing operation to the first word-line. Method also include receiving an error associated with reading the data from the second memory cells; and then reading the data from the second memory cells by applying a normal sensing operation to the second word-line.

Abstract: A method of concurrently programming a memory. Various methods include: applying a non-negative voltage on a first bit line coupled to a first memory cell; applying a negative voltage on a second bit line coupled to a second memory cell, where the negative voltage is generated using triple-well technology; then applying a programming pulse to the first and second memory cells concurrently; and in response, programming the first and second memory cells to different states. The methods also include applying a quick pass write operation to the first and second memory cells, by: applying a quick pass write voltage to the first bit line coupled to the fist memory cell, where the quick pass write voltage is higher than the non-negative voltage; applying a negative quick pass write voltage to the second bit line coupled to the first memory cell, where the negative quick pass write voltage is generated using triple-well technology.

Abstract: A memory apparatus and method of operation are provided. The apparatus includes first memory cells coupled to control circuit and a particular word line and storing a first cell data. The apparatus also includes second memory cells coupled to a source side neighbor word line disposed on a source side of the particular word line and storing second cell threshold voltages programmed after the first cell data. The control circuit senses the second cell threshold voltages at a first time while applying a predetermined initial read voltage to the source side neighbor word line. The control circuit senses the first cell data at a second time while iteratively applying one of a plurality of particular read voltages to the particular word line and simultaneously and iteratively applying one of a plurality of neighbor pass voltages to the source side neighbor word line based on the second cell threshold voltages.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a substrate. The first layer has a trench. The method includes forming first spacers over inner walls of the trench. The method includes removing a portion of the first spacers. The method includes forming a filling layer into the trench to cover the first spacers. The filling layer and the first spacers together form a strip structure. The method includes removing the first layer. The method includes forming second spacers over two opposite first sidewalls of the strip structure.

Abstract: This invention relates to a surface coating for capture circulating rare cells, comprising a nonfouling composition to prevent the binding of non-specific cells and adsorption of serum components; a bioactive composition for binding the biological substance, such as circulating tumor cells; with or without a linker composition that binds the nonfouling and bioactive compositions. The invention also provide a surface coating for capture and purification of a biological substance, comprising a releasable composition to release the non-specific cells and other serum components; a bioactive composition for binding the biological substance, such as circulating tumor cells; with or without a linker composition that binds the releasable and bioactive compositions. The present invention also discloses a novel microfluidic chip, with specific patterned microstructures to create a flow disturbance and increase the capture rate of the biological substance.

Abstract: Methods are disclosed herein for patterning integrated circuit devices, such as fin-like field effect transistor devices. An exemplary method includes forming a material layer that includes an array of fin features, and performing a fin cut process to remove a subset of the fin features. The fin cut process includes exposing the subset of fin features using a cut pattern and removing the exposed subset of the fin features. The cut pattern partially exposes at least one fin feature of the subset of fin features. In implementations where the fin cut process is a fin cut first process, the material layer is a mandrel layer and the fin features are mandrels. In implementations where the fin cut process is a fin cut last process, the material layer is a substrate (or material layer thereof), and the fin features are fins defined in the substrate (or material layer thereof).

Abstract: A method of manufacturing a semiconductor device includes depositing a first material on a substrate, depositing on the substrate a second material that has an etch selectivity different from an etch selectively of the first material, depositing a spacer material on the first and second material, and etching the substrate using the spacer material as an etch mask to form a fin under the first material and a fin under the second material.

Abstract: A methodology and structure for accounting for fabrication difference in memory holes is described. Increasing the distance of the memory holes from the sources of etchant or other fabrication material results in different characteristics of the memory from the outer memory holes to the inner memory holes. These difference can be accounted for by grouping the memory holes and altering the parameters of the program or verify operations based on the groupings. The bitline voltage for the inner grouping can be less than the bitline voltage for the outer groupings. The sense timing can be greater for the outer groupings relative to the inner groupings. This can result in voltage threshold for the inner groupings and outer groupings overlying each other to improve memory performance.

Abstract: An apparatus includes a first processor that generates first control signals to control a first circuit to perform memory operations on memory cells. A first number of first physical signal lines delivers the first control signals to a conversion circuit. A second number of second physical signal lines delivers converted control signals to the first circuit. The conversion circuit is coupled by the first number of first physical signal lines to the first processor and by the second number of second physical signal lines to the first circuit. The conversion circuit converts the first control signals to the converted control signals, and outputs the converted control signals to the first circuit. The first number of first physical signal lines is less than the second number of second physical signal lines to reduce the first number of first physical signal lines coupled between the first processor and the first circuit.

Abstract: Techniques are provided to adaptively determine when to begin verify tests for memory cells during a program operation. The memory cells are programmed using a normal programming speed until their threshold voltage exceeds an initial verify voltage. The memory cells are then programmed further using a reduced programming speed until their threshold voltage exceeds a final verify voltage. In one aspect, a count of memory cells which exceeds the initial verify voltage is used to determine when to begin verify tests for a higher data state. In another aspect, a count of the higher state memory cells which exceeds the initial or final verify voltage is used to determine when to begin verify tests for the higher data state. The counted memory cells are not subject to the reduced programming speed.

Abstract: A memory apparatus and method of operation is provided. The apparatus includes a block of memory cells arranged in strings and connected to word lines overlying one another in a stack. The apparatus includes a control circuit configured to determine whether the memory cells of the block are all programmed. The control circuit determines a boundary word line splitting the word lines into first and second word line sets connected to the memory cells that are respectively programmed and not programmed in response to determining the memory cells of the block are not all programmed. The control circuit applies a delta adjusted read voltage being a default read pass voltage minus a delta voltage to a subset of the second word line set separated from the boundary word line in the stack by at least an offset number of the word lines while reading a first group of memory cells.

Abstract: A circuit includes a program controller configured to perform a program operation with interleaved program-verify loops to program memory cells in a same block. During each program-verify loop, a control gate line voltage supply circuit first supplies a program pulse to a first cell of the block and then, before verifying the first cell, supplies a program pulse to a second cell of the block. After the program pulses are sent, the control gate line supply circuit consecutively supplies verify pulses to the first cell and the second cell such that a delay is introduced between the respective program and verify stages of the first and second cells. Additionally, a constant voltage bias on common control gate lines of the first and second memory cells is applied during the consecutive verify stages. Further, an order of verify pulses may be applied in a reverse order during a verify stage.

Abstract: A methodology and structure for accounting for fabrication difference in memory holes is described. Increasing the distance of the memory holes from the sources of etchant or other fabrication material results in different characteristics of the memory from the outer memory holes to the inner memory holes. These difference can be accounted for by grouping the memory holes and altering the parameters of the program or verify operations based on the groupings. The bitline voltage for the inner grouping can be less than the bitline voltage for the outer groupings. The sense timing can be greater for the outer groupings relative to the inner groupings. This can result in voltage threshold for the inner groupings and outer groupings overlying each other to improve memory performance.

Abstract: A method and system for executing a dynamic 1-tier scan on a memory array are provided. The memory array includes a plurality of memory cells organized into a plurality of sub-groups. The dynamic 1-tier scan includes executing an program loop in which cells of a first sub-group are counted to determine whether a numeric threshold is met, and, if the numeric threshold is met with respect to the first sub group, at least one additional program loop is executed in which cells of a second sub-group are counted to determine whether the numeric threshold is met with respect to the second sub-group.

Abstract: Techniques are provided for operating non-volatile storage. Peak current consumption may be reduced in connection with sensing non-volatile memory cells. Peak current consumption may be reduced when a first read condition is present. In one aspect, the value of a parameter of a voltage that is applied to a word line during a pre-read phase of a sense operation is controlled in order to reduce peak current consumption when the first read condition is present. Examples of the parameter include a ramp rate, a number of intermediate voltage levels, and a start time.

Abstract: An apparatus includes an array of memory cells comprising a first sub-block and a second sub-block electrically coupled by a channel. The apparatus also includes a measurement circuit configured to take a first measurement of a first sub-block of memory cells at a first offset threshold and a second measurement of the first sub-block of memory cells at a second offset threshold. The apparatus further includes a detection circuit configured to detect a disturb condition of the first sub-block based on at least one of the first measurement and the second measurement, and to initiate data maintenance in response to the disturb condition of the first sub-block.

Abstract: A non-volatile memory system comprises a memory structure and a control circuit connected to the memory structure. The control circuit includes a programmable and reprogrammable microcontroller. The microcontroller has a first processor that executes instructions to coordinate sequences of voltages applied to the memory structure by a first circuit in order to perform memory operations. The microcontroller has a second processor that executes second instructions to control a second circuit to test conditions of the non-volatile memory cells in response to the voltages applied to the memory structure. The microcontroller may have a third processor that controls the flow of the memory operation and directs the first and second processors to execute the instructions. The instructions of the various processors may be updated, which provides for flexible flow, core operation control, and condition testing.