Abstract: A slot device has a slot, a determining circuit, and a warning device. The slot is used to install an expansion card. The determining circuit is coupled to the slot and is used to determine whether the expansion card is completely installed to the slot. The warning device is coupled to the determining circuit, and when the determining circuit determines that the expansion card is not completely installed to the slot, the determining circuit controls the warning device to send out a warning signal.

Abstract: A thin film transistor (TFT) and the manufacturing method thereof are disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first CuSix layer, a gate-insulting layer, a semiconductor layer, a second CuSix layer, and a source electrode and a drain electrode. The gate electrode is disposed on the substrate, wherein the gate electrode includes the material of copper (Cu). The first CuSix layer is disposed between the gate electrode and the substrate. The gate insulating layer is disposed on the gate electrode. The semiconductor layer is disposed on the gate insulating layer. The second CuSix layer is disposed between the source electrode and the semiconductor layer and is disposed between the drain electrode and the semiconductor layer, wherein the source electrode and the drain electrode include the material of copper (Cu). The source electrode and the drain electrode are disposed on the second CuSix layer.

Abstract: The invention discloses a switching device for a pixel electrode of display device. The switching device comprises a gate formed on a substrate; a gate-insulating layer formed on the gate; a first buffer layer formed between the substrate and the gate and/or between the gate and the gate-insulating layer, wherein the first buffer layer comprises TaSix, TaSixNy, TiSix, TiSixNy, WSix, WSixNy, or WCxNy; a semiconductor layer formed on a portion of the gate-insulating layer; and a source and a drain formed on a portion of the semiconductor layer.

Abstract: The invention discloses a switching device for a pixel electrode of display device and methods for fabricating the same. A gate is formed on a substrate. A gate insulating layer is formed on the gate. A buffer layer is formed between the gate and the substrate, and/or formed between the gate and the gate insulating layer. The buffer layer comprises TaSix, TaSixNy, TiSix, TiSixNy, WSix, WSixNy, or WCxNy. A semiconductor layer is formed on the gate insulating layer. A source and a drain are formed on a portion of the semiconductor layer. The gate is covered by the buffer layer.

Abstract: The stick container includes a cup, a sleeve and a base. The cup includes a placement portion for disposing thereon a lipstick, and a spiral shell pillar extended downward from the cup. The sleeve made of a hollow tube includes a locking portion formed on the bottom portion thereof. The base includes a threaded cylinder formed in the central portion thereof. The threaded cylinder includes a threaded portion corresponding to the spiral shell pillar. A locking portion is formed in the base corresponding to the locking portion of the sleeve. The stick container is structurally simple and easy to assemble, which will largely reduce its fabrication cost.

Abstract: A display panel structure having a circuit element disposed thereon and method of manufacture are provided. The display panel includes a substrate and the circuit element disposed on the substrate. The circuit element has a first interface layer and a first conductive layer. Both the first interface layer and the first conductive layer have copper materials. The material which makes the first interface layer includes a reactant or a compound of the material which makes the first conductive layer. The method for manufacturing includes the following steps: forming a first interface layer on the substrate; forming a first conductive layer on the first interface layer; and etching the first conductive and interface layers to form a pattern. The existence of the first interface reduces the penetration of the first conductive layer on the substrate and improves the adhesive force between the first conductive layer and the substrate.

Abstract: A thin film transistor (TFT) and the manufacturing method thereof are disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first CuSix layer, a gate-insulting layer, a semiconductor layer, a second CuSix layer, and a source electrode and a drain electrode. The gate electrode is disposed on the substrate, wherein the gate electrode includes the material of copper (Cu). The first CuSix layer is disposed between the gate electrode and the substrate. The gate insulating layer is disposed on the gate electrode. The semiconductor layer is disposed on the gate insulating layer. The second CuSix layer is disposed between the source electrode and the semiconductor layer and is disposed between the drain electrode and the semiconductor layer, wherein the source electrode and the drain electrode include the material of copper (Cu). The source electrode and the drain electrode are disposed on the second CuSix layer.

Abstract: A copper conducting wire structure is for use in the thin-film-transistor liquid crystal display (LCD) device. The copper conducting wire structure includes at least a buffer layer and a copper layer. A fabricating method of the copper conducting wire structure includes the following steps. At first, a glass substrate is provided. Next, the buffer layer is formed on the glass substrate. The buffer layer is comprised of a copper nitride. At last, the copper layer is formed on the buffer layer.

Abstract: A copper conducting wire structure is for use in the thin-film-transistor liquid crystal display (LCD) device. The copper conducting wire structure includes at least a buffer layer and a copper layer. A fabricating method of the copper conducting wire structure includes the following steps. At first, a glass substrate is provided. Next, the buffer layer is formed on the glass substrate. The buffer layer is comprised of a copper nitride. At last, the copper layer is formed on the buffer layer.

Abstract: A stick container is provided. The stick container includes a cup, a sleeve and a base. The cup includes a placement portion for disposing thereon a lipstick, and a spiral shell pillar extended downward from the cup. The sleeve made of a hollow tube includes a locking portion formed on the bottom portion thereof. The base includes a threaded cylinder formed in the central portion thereof. The threaded cylinder includes a threaded portion corresponding to the spiral shell pillar. In addition, a locking portion is formed in the base corresponding to the locking portion of the sleeve. The stick container of the present invention is structurally simple and easy to assemble, which will largely reduce its fabrication cost.

Abstract: A thin film transistor (TFT) and the manufacturing method thereof are disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first CuSix layer, a gate insulting layer, a semiconductor layer, a second CuSix layer, and a source electrode and a drain electrode. The gate electrode is disposed on the substrate, wherein the gate electrode includes the material of copper (Cu). The first CuSix layer is disposed between the gate electrode and the substrate. The gate insulating layer is disposed on the gate electrode. The semiconductor layer is disposed on the gate insulating layer. The second CuSix layer is disposed between the source electrode and the semiconductor layer and is disposed between the drain electrode and the semiconductor layer, wherein the source electrode and the drain electrode include the material of copper (Cu). The source electrode and the drain electrode are disposed on the second CuSix layer.

Abstract: The present invention discloses a method for modificating a fluoropolymer. First, a fluoropolymer is provided, and then a hydrogen plasma treatment is performed on the fluoropolymer, so that C—H group is introduced to the surface of the fluoropolymer to form an intermediate. Next, an ozone treatment is performed on the intermediate, wherein the C—H group serves as ozone accessible site to form peroxide, and a first modified fluoropolymer is then formed. Finally, a grafting polymerization is initiated from the peroxide of the first modified fluoropolymer in the presence of a composition comprising at least one functional monomer, so as to form a second modified fluoropolymer. Furthermore, this invention also discloses methods for fabricating metal-clad laminates.

Abstract: A hair clip includes two clip members, two press blocks, and a resilient member. Each clip member includes a bend, a clipping section on a bottom of the bend, and a pivotal section on a top of the bend. The bends of the clip members together define a hair-clipping space. The pivotal sections of the clip members are pivotally connected together. Each press block is securely engaged with an associated clip member. The resilient member includes a bend mounted between upper portions of inner faces of the bends of the clip members. The resilient member is covered by the pivotal sections of the clip members. The resilient member includes two lateral sides respectively, securely connected to the clip members. The bend of the resilient member is located in an upper portion of the hair-clipping space. The resilient member biases the clipping sections of the clip members toward each other.

Abstract: The invention discloses a switching element for a pixel electrode of display device and methods for fabricating the same. A gate is formed on a substrate. A high-k dielectric layer is formed on the gate. The high-k dielectric layer comprises HfO2, HfNO, HfSiO, HfSiNO, or HfAlO. A semiconductor layer is formed on the high-k dielectric layer. A source and a drain are formed on a portion of the semiconductor layer.

Abstract: The invention discloses a switching device for a pixel electrode of display device and methods for fabricating the same. A gate is formed on a substrate. A gate insulating layer is formed on the gate. A buffer layer is formed between the gate and the substrate, and/or formed between the gate and the gate insulating layer. The buffer layer comprises TaSix, TaSixNy, TiSix, TiSixNy, WSix, WSixNy, or WCxNy. A semiconductor layer is formed on the gate insulating layer. A source and a drain are formed on a portion of the semiconductor layer. The gate is covered by the buffer layer.

Abstract: A copper conducting wire structure is for use in the thin-film-transistor liquid crystal display (LCD) device. The copper conducting wire structure includes at least a buffer layer and a copper layer. A fabricating method of the copper conducting wire structure includes the following steps. At first, a glass substrate is provided. Next, the buffer layer is formed on the glass substrate. The buffer layer is comprised of a copper nitride. At last, the copper layer is formed on the buffer layer.

Abstract: A thin film transistor (TFT) and the manufacturing method thereof are disclosed, and the thin film transistor comprises: a substrate, a gate electrode, a first CuSix layer, a gate insulting layer, a semiconductor layer, a second CuSix layer, and a source electrode and a drain electrode. The gate electrode is disposed on the substrate, wherein the gate electrode includes the material of copper (Cu). The first CuSix layer is disposed between the gate electrode and the substrate. The gate insulating layer is disposed on the gate electrode. The semiconductor layer is disposed on the gate insulating layer. The second CuSix layer is disposed between the source electrode and the semiconductor layer and is disposed between the drain electrode and the semiconductor layer, wherein the source electrode and the drain electrode include the material of copper (Cu). The source electrode and the drain electrode are disposed on the second CuSix layer.

Abstract: The global positioning system (GPS) compass is consisted of three main units. These units are the pointer, the sensor, and the controller. The pointer unit is comprised of an iron frame, an aluminum bar, and two aluminum plates. The sensor unit is comprised of global positioning system (GPS) receivers and global positioning system (GPS) antennas. The controller unit includes a personal computer, a stepping motor, several data interface circuit boards, and some motor control circuit boards. The baseline of the pointer is an aluminum bar of about one meter long. The sensor unit can measure the baseline's azimuth angle relative to the local coordinate. When command is received, the controller unit is capable of turning the aluminum bar to the desired direction by the aid of the stepping motor. There are two modes for operation available. One is the initial mode, the other is the normal mode. It takes about one or two minutes to complete the initial mode operation.