Abstract: A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.

Abstract: This application provides a packet transmission method that includes: receiving from a first session management network element, a first message including an address of a first terminal device and an identifier of a first user plane network element servicing the first terminal device; receiving from a second session management network element, a second message including an address of a second terminal device and an identifier of a second user plane network element servicing the second terminal device; determining, that the first terminal device and the second terminal device belong to a same local area network group; sending to the first session management network element the identifier of the second user plane network element and the address of the second terminal device; and sending to the second session management network element the identifier of the first user plane network element and the address of the first terminal device.

Abstract: A wind speed detection system and a wind speed detection method are provided. The wind speed detection system includes a pipe body and a controller. The pipe body comprises a pressure sensing module and a suction pump. The pressure sensing module is connected to a first opening through a first pipe and connected to a second opening through a second pipe. The first pipe has a main pipe. Two ends of a first alternative pipe are connected to two ends of the main pipe. When the controller performs a self-checking operation, the main pipe is closed and the first alternative pipe is opened. The controller starts the suction pump to perform forward suction. The controller measures a first air pressure through the first pipe and measures a second air pressure through the second pipe by the pressure sensing module. The controller calculates a reference wind speed value according to the first and second air pressures.

Abstract: The present invention relates to a derivative of 13-oxidized ingenol, use thereof in the prevention and/or treatment of a disease associated with proliferation or tumor in a subject, or a cosmetic indication, and use thereof in the prevention and/or treatment of a disease responsive to neutrophil oxidative burst, a disease responsive to a release of IL-8 by keratinocyte, or a disease responsive to induction of necrosis.

Abstract: The present invention provides compositions and methods of inducing an immune response in a subject in need thereof, comprising administering to the subject an immunologically-effective amount of a live Salmonella Typhi vector comprising a heterologous antigen from a pathogen, wherein the heterologous antigen comprises an outer membrane protein, an antigenic fragment thereof or a variant thereof, wherein the antigen is delivered to a mucosal tissue of the subject by an outer membrane vesicle.

Abstract: In a communication method, when a terminal device initiates establishment of a session of an Ethernet type, a virtual local area network management function entity in a communications system may determine a virtual local area network identifier of a user group to which the terminal device belongs. In this way, a user plane function entity in the session of the terminal device may allocate a plurality of virtual ports to a virtual local area network whose identifier is the virtual local area network identifier and may broadcast the Ethernet broadcast frame on the plurality of virtual ports.

Abstract: A session establishment method includes receiving, by a control device, first request information, where the first request information is used to indicate that a first terminal device requests to access a group communication service, determining a first terminal device group to which the first terminal device belongs, determining a target forwarding device that serves the first terminal device group, where the target forwarding device is a forwarding device capable of supporting a group communication service, and controlling the first terminal device to establish a session with the target forwarding device, to enable terminal devices in a same group to establish sessions with a same forwarding device such that group service access between the terminal devices in the group can be completed by using the same forwarding device.

Abstract: An electrical connector includes: an insulative housing having a recess at an outer surface thereof; plural contacts secured to the insulative housing and each including a securing portion, a front contacting portion, and a rear tail; an internal printed circuit board (PCB) having plural conductive pads connected to the rear tails of the contacts and an auxiliary ground pad; a metallic cover enclosing the insulative housing; and a coupling piece received in the recess of the insulative housing, the coupling piece either connecting the metallic cover to the auxiliary ground pad of the PCB or connecting the metallic cover to a corresponding ground contact of the plurality of contacts or both.

Abstract: A semiconductor device includes a semiconductor fin. The semiconductor device includes a metal gate disposed over the semiconductor fin. The semiconductor device includes a gate dielectric layer disposed between the semiconductor fin and the metal gate. The semiconductor device includes first spacers sandwiching the metal gate. The first spacers have a first top surface and the gate dielectric layer has a second top surface, and the first top surface and a first portion of the second top surface are coplanar with each other. The semiconductor device includes second spacers further sandwiching the first spacers. The second spacers have a third top surface above the first top surface and the second top surface. The semiconductor device includes a gate electrode disposed over the metal gate.

Abstract: The present application discloses a method for delineating exploration reserved areas of deep-sea polymetallic sulfide resources, which is suitable for delineating the exploration reserved area for further exploration by delineation and evaluation of the prospect area after prospecting and investigation of seabed sulfide. The method comprises the following: a stage of extracting prospecting indicators; a stage of evaluating metallogenic prospect areas; and, a stage of delineation of the exploration reserved areas. The present application can be applied to the evaluation and prediction of deep-sea polymetallic sulfide resources, in particular to the delineation of exploration reserved areas for deep-sea polymetallic sulfide resources.

Abstract: An electronic package is provided, in which a circuit structure is disposed on the uppermost side of a plurality of stacked organic material substrates for connecting an electronic element, so that a line width/line spacing of a redistribution layer of the circuit structure conforms with a line width/line spacing of the electronic element. Therefore, when the size specification of the electronic element is designed to be miniaturized, the redistribution layer configured in the circuit structure can effectively match the line spacing/line width of the electronic element, so as to meet the requirements of miniaturized packaging.

Abstract: A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.

Abstract: A data transmission method includes: starting transferring chunks in a first data block of an image file to a device via a Bluetooth network; when a number of at least one first trunk in the chunks that has been transferred to the device equals to a transfer window, determining whether the device receives all of the at least one first trunk to update the chunk missing data; if the device receives all of the at least one first trunk, dynamically adjusting the transfer window according to the chunk missing data to continue transferring remaining chunks in the chunks or a second data block of the image file to the device; and if the device fails to receive all of the at least one first trunk, retransferring at least one chunk that is not previously received by the first device to the device.

Abstract: The present invention relates to a sweetener liquid for preventing and relieving intestinal sugar alcohol intolerance. The sweetener liquid per 100ml includes 0.01 to 0.04 g of low-esterification pectin, 0.01 g to 0.1 g of ?-carrageenan, 0.01 g to 0.3 g of locust bean gum, 30 g to 60 g of xylitol, 5 g to 15 g of maltitol and 1 g to 10 g of sorbitol and remaining water; the low-esterification pectin is a pectin concentrate including, based on parts by weight, 15 parts of calcium citrate, 60 parts of low-molecular-weight pectin, 85 parts of ethylene glycol, 5 parts of carboxymethyl cellulose sodium and 30 parts of sodium citrate; the low-molecular-weight pectin includes a low-sugar fruit juice and a lemon juice; the sweetener liquid has a pH of 5-6.5 and a viscosity of 0.1 to 25 mPa•S. The present invention further provides a method of preparing a sweetener liquid and an application thereof.

Abstract: A method for fabricating a semiconductor device is provided. The method includes depositing a gate dielectric layer over a semiconductor substrate; depositing a work function layer over the gate dielectric layer by an atomic layer deposition (ALD) process, wherein the work function layer comprises a metal element and a nonmetal element, and the ALD process comprises a plurality of cycles. Each of the cycles comprises: introducing a precursor gas comprising the metal element to a chamber to form a precursor surface layer on the semiconductor substrate in the chamber; purging a remaining portion of the precursor gas away from the chamber; performing a reactive-gas plasma treatment using a reactive-gas plasma comprising the nonmetal element to convert the precursor surface layer into a monolayer of the work function layer; purging a remaining portion of the reactive-gas plasma away from the chamber, and performing an inert-gas plasma treatment in the chamber.

Abstract: A memory device, for executing an anneal computation with first state and a second state. The memory device includes a first memory array, a second memory array, a control circuit, a sensing circuit and a processing circuit. the control circuit selects a first horizontal row of memory units from the first memory array, and selects a second horizontal row of memory units from the second memory array. The sensing circuit computes a local energy value of the first state according to the current generated by the memory units of the first horizontal row, and computes a local energy value of the second state according to the current generated by the memory units of the second horizontal row. The processing circuit updates the first state and/or the second state according to the local energy value of the first state and the local energy value of the second state.

Abstract: An antenna structure includes a first radiation element, a second radiation element, a third radiation element, a fourth radiation element, a fifth radiation element, and a dielectric substrate. The first radiation element has a feeding point. The second radiation element is coupled to the first radiation element. The third radiation element is coupled to a first grounding point. The third radiation element is further coupled through the fourth radiation element to a second grounding point. The fifth radiation element is coupled to the third radiation element and the fourth radiation element. The fifth radiation element is adjacent to the second radiation element. The first radiation element and the second radiation element are at least partially surrounded by the third radiation element, the fourth radiation element, and the fifth radiation element.

Abstract: An incretin analogue, a preparation method therefor, and the use thereof. The incretin analogue has a GLP-1R/GIPR/GCGR agonist activity, is a triple agonist, and can be used for lowering blood glucose, reducing fat and reducing weight.

Abstract: A sensor package structure is provided. The sensor package structure includes a substrate, a sensor chip, a ring-shaped wall, and a light-permeable layer. The substrate has a first surface and a second surface that is opposite to the first surface. The first surface of the substrate has a chip-bonding region and a connection region that surrounds the chip-bonding region, and the substrate has a plurality of protrusions arranged in the connection region. The sensor chip is disposed on the chip-bonding region of the substrate and is electrically coupled to the substrate. The ring-shaped wall is formed on the connection region of the substrate, and the protrusions of the substrate are embedded in and gaplessly connected to the ring-shaped wall. The light-permeable layer is disposed on the ring-shaped wall, and the light-permeable layer, the ring-shaped wall, and the substrate jointly define an enclosed space therein.

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.