Abstract: Various embodiments of the present invention are directed to methods of forming nanostructures on non-single crystal substrates, and resulting nanostructures and nanoscale functional devices. In one embodiment of the present invention, a method of forming nanostructures includes forming a multi-layer structure comprising a metallic layer and a silicon layer. The multi-layer structure is subjected to a thermal process to form metal-silicide crystallites. The nanostructures are grown on the metal-silicide crystallites. In another embodiment of the present invention, a structure includes a non-single-crystal substrate and a layer formed over the non-single-crystal substrate. The layer includes metal-silicide crystallites. A number of nanostructures may be formed on the metal-silicide crystallites. The disclosed structures may be used to form a number of different types of functional devices for use in electronics and/or optoelectronics devices.

Abstract: A method for manufacturing a pressure-laminated stator ring includes forming a plurality of stator ring elements, and electrically insulating each of the stator ring elements. The electrically-insulated stator ring elements are pressure-laminated together to form a multi-layered stator ring.

Abstract: A light-emitting semiconductor apparatus includes a light-emitting structure, a reflective structure, and a carrier. The light-emitting structure includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer positioned between the first type semiconductor layer and the second type semiconductor layer. The reflective structure has a first transparent conductive layer, a first patterned reflective layer, a second transparent conductive layer, and a second patterned reflective layer. The first patterned reflective layer is disposed between the first transparent conductive layer and the second transparent conductive layer, and has an opening for physically connecting the first transparent conductive layer and the second transparent conductive layer. The second transparent conductive layer is disposed between the first patterned reflective layer and the second patterned reflective layer.

Abstract: Provided are novel salts of 2-(1-azabicyclo-[2.2.

Abstract: A liquid crystal display having a backlight module, liquid crystal layer and a color filter layer is disclosed in the invention. An ultraviolet unit for emitting ultraviolet is disposed in the backlight module. The color filter layer is composed of a purity of pixels, and at least one of the purity of pixels is filled with a wavelength-converting material. The wavelength-converting material can convert ultraviolet into green light.

Abstract: Various embodiments of the present invention relate to dynamically reconfigurable hologram comprising a phase-modulation layer and an intensity-control layer. The phase modulation layer comprises an electronically programmable erasable negative index material crossbar. The crossbar includes a first layer of approximately parallel nanowires (502) and a second layer of approximately parallel nanowires (504) that overlay the nanowires in the first layer. The nanowires in the first and second layers have substantially regularly spaced fingers. The crossbar also includes resonant elements (812) comprising two fingers of a nanowire in the first layer, two fingers of a nanowire in the second layer, and an intermediate layer (1006,1302) sandwiched between the nanowire in the first layer and the nanowire in the second layer. The refractive index of each resonant element is controlled by changing the charge density within the intermediate layer.

Abstract: A semiconductor light-emitting element assembly, comprising a composite substrate, a circuit layout carrier, a connecting structure, a recess, and a semiconductor light-emitting element, is disclosed. The connecting structure is used for bonding the composite substrate with the circuit layout carrier. The recess is formed by the circuit layout carrier and extends toward the composite substrate. The semiconductor light-emitting element is deposited in the recess and electrically connected to the circuit layout carrier.

Abstract: A defect detecting method for an optical disc accessed by an optical pickup head, including: (a) detecting if any defect exists in a detected region of the optical disc after data is written to the detected region; (b) while writing data to the optical disc, detecting if any defect exists on the optical disc according to reflection from the optical pickup head to thereby generate a first defect detecting result; and (c) switching from one of the steps (a) and (b) to the other of the steps (a) and (b).

Abstract: One embodiment in accordance with the invention is an apparatus that can include a non-single crystal substrate and a nanowire grown from a surface of the non-single crystal substrate. Furthermore, the apparatus can also include an electrode coupled to the nanowire. It is noted that the nanowire can be electrically conductive and/or optically active.

Abstract: Searching for a subset of the keywords in a search-engine query is described herein. The search-engine query is parsed into keywords. The keywords are checked against an inverted index to determine whether any web documents include the subset of keywords. Documents containing the subset of keywords are listed in a search-results list and transmitted back to the user.

Abstract: A stapler includes a main body, a light-emitting module, and an optical module. The main body has a stapling portion. The light-emitting module is disposed in the main body. The optical module faces the light-emitting module. Light emitted from the light-emitting module is converted into a light spot with a linear shape by the optical module to mark a stapling position of the stapling portion.

Abstract: A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer.

Abstract: An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer.

Abstract: A liquid crystal display having a backlight module, liquid crystal layer and a color filter layer is disclosed in the invention. An ultraviolet unit for emitting ultraviolet is disposed in the backlight module. The color filter layer is composed of a purity of pixels, and at least one of the purity of pixels is filled with a wavelength-converting material. The wavelength-converting material can convert ultraviolet into green light.

Abstract: A method for forming isolation structure for MOS transistor is disclosed, which includes forming a first photoresist layer over a sacrificed oxide layer of a semiconductor substrate, patterning the first photoresist layer to define a PMOS active region and a PMOS isolation region; implanting nitrogen ions into the PMOS isolation region through the sacrificed oxide layer by using the first photoresist layer as a mask; removing the first photoresist layer; forming a second photoresist layer over the sacrificed oxide layer, patterning the second photoresist layer to define a NMOS active region and a NMOS isolation region; implanting oxygen ions into the NMOS isolation region through the sacrificed oxide layer by using the second photoresist layer as a mask; removing the second photoresist layer and the sacrificed oxide layer; and annealing the semiconductor substrate to form isolation structures of PMOS and NMOS, respectively.

Abstract: Various embodiments of the present invention are directed to nanowire-based photodetectors that can be used to convert information encoded in a channel of electromagnetic radiation into a photocurrent encoding the same information. In one embodiment of the present invention, a photodetector comprises a waveguide configured to transmit one or more channels of electromagnetic radiation. The photodetector includes a first terminal and a second terminal. The first terminal and the second terminal are positioned on opposite sides of the waveguide. The photodetector also includes a number of nanowires. Each nanowire interconnects the first terminal to the second terminal and a portion of each nanowire is embedded in the waveguide.

Abstract: A deformable optical element includes an elastically deformable lens. Electrical contacts are directly attached to the elastically deformable lens and configured to receive an applied voltage. The electrical contacts have opposing surfaces configured to develop electrostatic forces in response to the applied voltage. The electrostatic forces deform the elastically deformable lens to create a predetermined optical effect.

Abstract: A pixel structure driven by a scan line and a data line arranged on a substrate is provided. The pixel structure includes a control unit, an OEL unit and a semi-transparent reflector structure. The control unit driven by the scan line and the data line is arranged on the substrate. The OEL unit is arranged on the substrate and includes a transparent electrode, a light-emitting layer and a metal electrode. The transparent electrode is electrically connected with the control unit. The light-emitting layer is disposed on the transparent electrode. The metal electrode is disposed on the light-emitting layer. The semi-transparent reflector structure is sandwiched between the substrate and the OEL unit, and includes at least a plurality of first and second dielectric layers. The first and second dielectric layers are alternately stacked, and the refractive index of the first dielectric layers is different from that of the second dielectric layers.

Abstract: An adaptive multi-channel controller and its method for a storage device are provided for data transmission between a host and the storage device. The storage device is configured to have multiple channels. A channel use amount is determined based on a data access amount of the host. Then, activated channels are selected among the channels according to the channel use amount. The data transmission is then carried out through the selected channels.

Abstract: Various embodiments of the present invention are directed to nanowire-based modulators that can be used to encode information in a carrier channel of electromagnetic radiation. In one embodiment of the present invention, the modulator includes a waveguide configured to transmit one or more channels of electromagnetic radiation. The modulator includes a first terminal and a second terminal. The first terminal and the second terminal are positioned on opposite sides of the waveguide. The modulator also includes a number of nanowires, wherein each nanowire interconnects the first terminal to the second terminal and a portion of each nanowire is operatively coupled to the waveguide. The nanowires modulate the one or more channels when an electrical signal of appreciable magnitude is applied to the first terminal and the second terminal.