Abstract: A method includes: forming a mask layer on a semiconductor wafer; forming a tin droplet, including: supplying tin to a high-pressure reservoir from a low-pressure reservoir; monitoring a level of tin in the high-pressure reservoir by at least two electrodes attached to the high-pressure reservoir; in response to the level of the tin exceeding a threshold value, supplying the tin to a droplet generator from the high-pressure reservoir; forming the tin droplet by the droplet generator using the tin supplied from the high-pressure reservoir; generating light by the tin droplet; and patterning the mask layer by the light.

Abstract: The disclosed method includes acquiring sample models and marking sample feature points; selecting target feature points and regional points on bones; transforming the target feature points and the regional points, and registering the target feature points with the sample feature points; formulating a strategy for assigning impact factors to the sample models, linearly combining all sample models to construct an initial model, and determining initial feature points corresponding to the target feature points in the initial model; adjusting the strategy according to the distance between initial feature points and the target feature points, selecting the strategy corresponding to the minimum distance as an optimal strategy, and determining an optimal initial model; determining a matching point corresponding to each regional point in the optimal initial model, and calculating a transformation relationship; and transmitting all points of the optimal initial model according to the transformation relationship to obt

Abstract: Provided are a package structure and a method of forming the same. The package structure includes a bottom package having a first sidewall and a second sidewall opposite to each other; a hybrid path layer disposed on the bottom package, wherein the hybrid path layer comprises an optical path layer and an electrical path layer, and at least one optical path of the optical path layer extends from the first sidewall of the bottom package beyond a center of the bottom package; and a plurality of dies bonded onto the hybrid path layer.

Abstract: The present invention provides a double-crosslinked fibrin gel, which is a solid hydrogel composed of a network structure with a blocking function and a network structure with an adhesion function, where the network structure with the blocking function is a three-dimensional fibrin network, and the network structure with the adhesion function is a three-dimensional photosensitive gel network; each channel of the photosensitive gel network has a group of the fibrin network inside, and each group of the fibrin network has overall continuity; on the whole, the three-dimensional fibrin network disperses disorderly throughout a surface and an interior of the solid hydrogel. The present invention further provides a raw material composition, a kit for preparing the double-crosslinked fibrin gel, and an application of the kit to prepare an in-situ rapid clotting and hemostatic material.

Abstract: The present invention relates to a flow control method for a high-accuracy and high-stiffness hydrostatic device, comprising: a main body and an auxiliary body; the upper surface of the main body forms a first flow channel, and a lug boss is formed on the first flow channel; the upper surface of the main body forms a second flow channel; the middle of the main body is concave down to form a pressure stabilizing cavity; the end of the first flow channel is provided with first throttling holes; the second flow channel is provided with a main oil hole; the first flow channel is provided with an oil distribution channel; the lug boss is provided with a second throttling hole; a bump matched with a bearing platform is formed on the bottom of the auxiliary body; a film sheet is arranged between the bump and the bearing platform; and the surface of the bump is provided with a groove.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a stack of semiconductor nanostructures over a base structure and a first epitaxial structure and a second epitaxial structure sandwiching the semiconductor nanostructures. The semiconductor device structure also includes a gate stack wrapped around each of the semiconductor nanostructures and a backside conductive contact connected to the second epitaxial structure. A first portion of the backside conductive contact is directly below the base structure, and a second portion of the backside conductive contact extends upwards to approach a bottom surface of the second epitaxial structure. The semiconductor device structure further includes an insulating spacer between a sidewall of the base structure and the backside conductive contact.

Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through substrate via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through substrate via.

Abstract: A laser beam shaping device includes a multi-zone structure lens and a focusing lens. The multi-zone structure lens includes a lens body and a refractive structure. The lens body has an incident plane and an emission plane, and one of the incident plane and the emission plane is furnished with the refractive structure. The light source passing through the refractive structure deviates and leaves the lens body via the emission plane. The light source passing through the lens body is divided into N sets of light beams. After the N sets of light beams penetrate through the focusing lens, N set of incident beams are formed to project the interface of the first material and the second material in an oblique inward manner with respect to the optical axis of the focusing lens. In additional, a laser processing system and a laser interlocking welding structure respectively are also provided.

Abstract: A semiconductor device includes a source/drain feature over a semiconductor substrate, channel layers connected to the source/drain feature, a gate structure between adjacent channel layers and wrapping the channel layers, and an inner spacer between the source/drain feature and the gate structure and between adjacent channel layers. The source/drain feature has a first interface with a first channel layer of the channel layer. The first interface has a convex profile protruding towards the first channel layer.

Abstract: A display panel and a display device are provided. The display panel includes: a photosensitive layer including a photosensitive element; a first collimation layer including a first opening; an encapsulation layer; and a second collimation layer including a second opening. The first opening, the second opening, and the photosensitive element overlap with each other in a thickness direction of the photosensitive layer. The display panel also includes a first organic layer, and the encapsulation layer further includes a second organic layer. The first organic layer and the second organic layer are overlapped with the first opening, the second opening, and the photosensitive element in the thickness direction of the photosensitive layer.

Abstract: A stylus and a touch device are provided. The stylus includes a tip portion and a transmission electrode. The transmission electrode is disposed on the tip portion. The transmission electrode transmits a downlink signal to the touch device. The touch device includes a touch panel and a touch processing circuit. The touch processing circuit is coupled to the touch panel. The touch processing circuit receives the downlink signal from the stylus through the touch panel. The downlink signal includes a plurality of different frequencies.

Abstract: A static voltage stability margin evaluation method and system, and a terminal device are related to the field of integrated energy system operation. The method includes the following steps: establishing a thermal dynamic model of a heating system; establishing a thermoelectric coupling device model; establishing a static voltage stability margin model of an electric power system that considers thermal dynamics of the heating system; and solving the model to obtain a voltage stability margin. In the present invention, a static voltage stability margin that considers thermal dynamics of a heating system can be obtained, and a Pareto boundary of the static voltage stability margin that considers the thermal dynamics can be obtained through a dual-objective nonlinear optimization method, so that an impact of thermoelectric coupling on voltage stability and an impact of thermal inertia of the heating system on a voltage stability margin can be revealed.

Abstract: A semiconductor device, a circuit board structure and a manufacturing forming thereof are provided. A circuit board structure includes a core layer, a first build-up layer and a second build-up layer. The first build-up layer and the second build-up layer are disposed on opposite sides of the core layer. The circuit board structure has a plurality of stress releasing trenches extending into the first build-up layer and the second build-up layer.

Abstract: A method of power control can include receiving at a UE a first downlink reference signal from a repeater and a second downlink reference signal from a base station, the first downlink reference signal corresponding to a first path that is between the UE and the base station and passes the repeater, the second downlink reference signal corresponding to a second path that is between the UE and the base station. The UE estimates a first uplink path loss of the first path and a second uplink path loss of the second path and determine a first uplink transmit power corresponding to the first path and a second uplink transmit power corresponding to the second path. The UE performs an uplink transmission on the first path based on the first uplink transmit power and on the second path based on the second uplink transmit power.

Abstract: Circuit, method for audio signal processing with excursion estimation compensation, and non-transitory storage medium are provided. The circuit comprises a delay circuit, compensation filter, excursion estimator, peak detector, gain determination circuit, and gain adjustment circuit. The delay circuit is for delaying a digital audio signal to output a delayed digital audio signal. The compensation filter is for generating a compensated digital audio signal according to the digital audio signal for excursion estimation compensation for a speaker type. The excursion estimator is for determining an estimated excursion signal for the speaker type according to the compensated digital audio signal. The gain determination circuit is for generating a gain setting signal according to the estimated excursion signal and a threshold value. The gain adjustment circuit is for generating an adjusted digital audio signal according to the gain setting signal and delayed digital audio signal.

Abstract: A display panel, including: a base plate; a plurality of first electrodes being distributed in an array on a side of the base plate and having first edge areas; an isolation structure, provided on a side of the base plate, located on a same side of the base plate as the first electrodes, enclosing a plurality of isolation openings and insulated from the first electrodes, at least part of which are exposed from the isolation openings, the isolation structure includes isolation walls with first surfaces away from the base plate and second surfaces facing the base plate, as well as first side surfaces connecting the first surfaces and the second side surfaces, and at least part of orthographic projections of the first edge areas on the base plate are staggered with orthographic projections of the first side surface on the base plate.

Abstract: A display panel, a display apparatus, and a method for manufacturing a display panel. The display panel includes a substrate, an isolation structure, a light-emitting functional layer, and a first encapsulation layer, and the isolation structure is provided on a side of the substrate, and encloses and forms an opening structure. The light-emitting functional layer is provided on a side of the substrate and includes a plurality of light-emitting units provided within opening structures. The first encapsulation layer is provided on a side of the light-emitting functional layer away from the substrate and includes a plurality of encapsulation portions corresponding to the light-emitting units. Thicknesses of the encapsulation portions corresponding to at least a part of the light-emitting units having different light-emitting colors are different. In the embodiments of the present application, usage reliability of the display panel may be improved.

Abstract: Low-flow tungsten chemical vapor deposition (CVD) techniques described herein provide substantially uniform deposition of tungsten on a semiconductor substrate. In some implementations, a flow of a processing vapor is provided to a CVD processing chamber such that a flow rate of tungsten hexafluoride in the processing vapor results in the tungsten layer being grown at a slower rate than a higher flow rate of the tungsten hexafluoride to promote substantially uniform growth of the tungsten layer. In this way, the low-flow tungsten CVD techniques may be used to achieve similar surface uniformity performance to an atomic layer deposition (ALD) while being a faster deposition process relative to ALD (e.g., due to the lower deposition rate and large quantity of alternating processing cycles of ALD). This reduces the likelihood of defect formation in the tungsten layer while increasing the throughput of semiconductor device processing for the semiconductor substrate (and other semiconductor substrates).

Abstract: A dummy gate electrode and a dummy gate dielectric are removed to form a recess between adjacent gate spacers. A gate dielectric is deposited in the recess, and a barrier layer is deposited over the gate dielectric. A first work function layer is deposited over the barrier layer. A first anti-reaction layer is formed over the first work function layer, the first anti-reaction layer reducing oxidation of the first work function layer. A fill material is deposited over the first anti-reaction layer.

Abstract: Embodiments of the present disclosure disclose a Cupriavidus metallidurans CML2, wherein the Cupriavidus metallidurans CML2 is deposited in the China Center for Type Culture Collection with a depository number CCTCC NO: M20231365, and a 16s rDNA of the Cupriavidus metallidurans CML2 has a nucleotide sequence of SEQ ID No. 1.