Patents by Inventor Yu Chen Wang

Yu Chen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240110208
    Abstract: A gene editing system of Candida viswanathii includes a Candida viswanathii, a first gene editing fragment and a second gene editing fragment. The first gene editing fragment successively includes a first homology arm and a screening gene. The second gene editing fragment is connected to a C-terminus of the first gene editing fragment and includes a second homology arm, a Cas9 expression cassette and a sgRNA cassette. The Cas9 expression cassette successively includes a Cas9 promoter, a Cas9 gene and three nuclear localization sequences. The sgRNA cassette successively includes a sgRNA promoter, a first ribozyme, a targeting sequence, a scaffold and a second ribozyme. The first gene editing fragment and the second gene editing fragment are constructed as a linear fragment for gene editing of a chromosome of the Candida viswanathii.
    Type: Application
    Filed: March 24, 2023
    Publication date: April 4, 2024
    Inventors: Yu-Chen HU, Nam Ngoc PHAM, June-Yen CHOU, Hsing-Yun WANG, Vincent Jianan LIU
  • Patent number: 11950431
    Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.
    Type: Grant
    Filed: December 2, 2022
    Date of Patent: April 2, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Wei Chen, Hui-Lin Wang, Yu-Ru Yang, Chin-Fu Lin, Yi-Syun Chou, Chun-Yao Yang
  • Patent number: 11950428
    Abstract: A memory device includes a first stacking structure, a second stacking structure, a plurality of first isolation structures, gate dielectric layers, channel layers and conductive pillars. The first stacking structure includes a plurality of first gate layers, and a second stacking structure includes a plurality of second gate layers, where the first stacking structure and the second stacking structure are located on a substrate and separated from each other through a trench. The first isolation structures are located in the trench, where a plurality of cell regions are respectively confined between two adjacent first isolation structures of the first isolation structures in the trench, where the first isolation structures each includes a first main layer and a first liner surrounding the first main layer, where the first liner separates the first main layer from the first stacking structure and the second stacking structure.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Chen Wang, Meng-Han Lin, Sai-Hooi Yeong, Yu-Ming Lin, Han-Jong Chia
  • Patent number: 11950513
    Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection and a second metal interconnection in the first IMD layer; forming a channel layer on the first metal interconnection and the second metal interconnection; forming a magnetic tunneling junction (MTJ) stack on the channel layer; and removing the MTJ stack to form a MTJ.
    Type: Grant
    Filed: July 5, 2022
    Date of Patent: April 2, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Wei Chen, Po-Kai Hsu, Yu-Ping Wang, Hung-Yueh Chen
  • Publication number: 20240094902
    Abstract: A method for selecting an application and associated operational guidance to utilize on a mobile device is disclosed. In one embodiment, such a method identifies a selected environment of interest. Within the selected environment, the method identifies one or more applications that are commonly utilized by users within the selected environment and documents the one or more applications. The method detects physical entry of a particular user into the selected environment and, in response to detecting the entry, automatically notifies the particular user of the one or more applications that are commonly utilized within the selected environment. In certain embodiments, the method enables the user to quickly launch the one or more applications and/or provides operational guidance to the user with regard to using the one or more applications. A corresponding system and computer program product are also disclosed.
    Type: Application
    Filed: September 20, 2022
    Publication date: March 21, 2024
    Applicant: International Business Machines Corporation
    Inventors: Xiang Wei Li, Dong Chen, Ye Chuan Wang, Ting Ting Zhan, Ju Ling Liu, Yu An, Wei Yan
  • Publication number: 20240094675
    Abstract: A method for inspecting authenticity of a hologram is provided. A computer device that stores a color image of the hologram transforms the color image into a hyperspectral image, converts the hyperspectral image into a grayscale image, and determines authenticity of the hologram based on multiple grayscale values in a region of interest in the grayscale image and multiple grayscale thresholds that respectively correspond to different wavelengths.
    Type: Application
    Filed: March 1, 2023
    Publication date: March 21, 2024
    Inventors: Hsiang-Chen Wang, Yu-Ming Tsao, Arvind Mukundan
  • Publication number: 20240096830
    Abstract: A method includes forming a first sealing layer at a first edge region of a first wafer; and bonding the first wafer to a second wafer to form a wafer stack. At a time after the bonding, the first sealing layer is between the first edge region of the first wafer and a second edge region of the second wafer, with the first edge region and the second edge region comprising bevels. An edge trimming process is then performed on the wafer stack. After the edge trimming process, the second edge region of the second wafer is at least partially removed, and a portion of the first sealing layer is left as a part of the wafer stack. An interconnect structure is formed as a part of the second wafer. The interconnect structure includes redistribution lines electrically connected to integrated circuit devices in the second wafer.
    Type: Application
    Filed: January 9, 2023
    Publication date: March 21, 2024
    Inventors: Yu-Yi Huang, Yu-Hung Lin, Wei-Ming Wang, Chen Chen, Shih-Peng Tai, Kuo-Chung Yee
  • Publication number: 20240088095
    Abstract: A method for forming a chip package structure. The method includes bonding first connectors over a front surface of a semiconductor wafer. The method also includes dicing the semiconductor wafer from a rear surface of the semiconductor wafer to form semiconductor dies and mounting first and second semiconductor dies in the semiconductor dies over a top surface of the interposer substrate. The method further forming an encapsulating layer over the top surface of the interposer substrate to cover the first semiconductor die and the second semiconductor die. A first sidewall of the first semiconductor die faces a second sidewall of the second semiconductor die, and upper portions of the first sidewall and the second sidewall have a tapered contour, to define a top die-to-die distance and a bottom die-to-die distance that is less than the top die-to-die distance.
    Type: Application
    Filed: November 24, 2023
    Publication date: March 14, 2024
    Inventors: Chin-Hua WANG, Shin-Puu JENG, Po-Yao LIN, Po-Chen LAI, Shu-Shen YEH, Ming-Chih YEW, Yu-Sheng LIN
  • Patent number: 11928842
    Abstract: A method of measuring chromaticity of a target object is implemented using a computer device that stores a plurality of light source spectrum datasets each associated with a specific object. The method includes: obtaining a captured color image of the target object; generating a spectral image based on the captured color image using a spectral transformation matrix; obtaining one of the plurality of light source spectrum datasets that is associated with the target object; and calculating a chromaticity dataset of the target object based on the spectral image and the one of the plurality of light source spectrum datasets.
    Type: Grant
    Filed: April 26, 2022
    Date of Patent: March 12, 2024
    Assignee: National Chung Cheng University
    Inventors: Hsiang-Chen Wang, Yu-Ming Tsao, Yu-Lin Liu
  • Publication number: 20240074041
    Abstract: A circuit board includes a substrate and a metallic layer. A first area and at least one second area are defined on a portion of the substrate, the second area is located outside the first area. The metallic layer includes first test lines disposed on the first area and second test lines disposed on the second area. A first test pad of each of the first test lines has a first width, and a second test pad of each of the second test lines has a second width. The second width is greater than the first width such that probes of an electrical testing tool can contact the first and second test pads on the circuit board correctly during electrical testing.
    Type: Application
    Filed: August 16, 2023
    Publication date: February 29, 2024
    Inventors: Gwo-Shyan Sheu, Kuo-Liang Huang, Hsin-Hao Huang, Pei-Wen Wang, Yu-Chen Ma
  • Patent number: 11916471
    Abstract: An example electronic device includes a controller to determine a user touch detection by a power adaptor coupled to the electronic device to operate the electronic device in an AC power mode. The power adaptor may comprise a proximity sensor to detect a user touch for detachment of the power adaptor from the electronic device, and a control circuit to operate a configuration pin in a low output mode to signal user touch detection. The controller may initiate central processing unit (CPU) throttling to reduce power consumption by the electronic device. The controller may further stop CPU throttling in response to detecting that the power adaptor has been detached from the electronic device. Further, the controller may switch the electronic device to a DC power mode to operate using DC power supplied by a battery of the electronic device in response to power adaptor detachment.
    Type: Grant
    Filed: October 18, 2019
    Date of Patent: February 27, 2024
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Ting-Yang Tsai, Yi-Chen Chen, Ching-Lung Wang, Yu-Min Shen
  • Patent number: 11069419
    Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method includes forming a test line letter structure having one or more sidewalls continuously extending along a path that defines a shape of an alpha-numeric character from a top-view. The test line letter structure is formed by forming a first polysilicon structure over a substrate and forming a second polysilicon structure over the substrate at a location laterally separated from first polysilicon structure by a dielectric layer.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: July 20, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jui-Tsung Lien, Fang-Lan Chu, Hong-Da Lin, Wei Cheng Wu, Ku-Ning Chang, Yu-Chen Wang
  • Patent number: 10809925
    Abstract: A memory device comprises a memory array with I/O path and security circuitry coupled to the I/O path of the memory array. The memory device comprises control circuitry, responsive to configuration data, to invoke the security circuitry. The memory device comprises a configuration store, storing the configuration data accessible by the control circuitry to specify location and size of a security memory region in the memory array. Responsive to an external command and the configuration data, the control circuitry can be configured to invoke the security circuitry on an operation specified in the external command in response to accesses into the security memory region, or to not invoke the security circuitry in response to accesses to outside the security memory region.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: October 20, 2020
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Ken-Hui Chen, Kuen-Long Chang, Chin-Hung Chang, Yu-Chen Wang
  • Patent number: 10732166
    Abstract: A method for in-line measurement of the quality of a microarray are disclosed and the method includes the following steps. A solid substrate is provided, and the solid substrate includes a plurality of areas in an array. At least one biomarker is in-situ synthesized on at least one of the plurality of areas by a plurality of synthesis steps. After performing at least one of the plurality of synthesis step, a check step is immediately performed on a semi-product of the at least one biomarker by an atomic force microscope to obtain an in-line measurement result. The quality of the semi-product of the at least one biomarker is determined based on the in-line measurement result.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: August 4, 2020
    Assignee: Centrillion Technologies Taiwan Co. LTD.
    Inventors: Tzu-Kun Ku, Yao-Kuang Chung, Yu-Chen Wang, Po-Yen Liu
  • Publication number: 20200241768
    Abstract: A memory device comprises a memory array with I/O path and security circuitry coupled to the I/O path of the memory array. The memory device comprises control circuitry, responsive to configuration data, to invoke the security circuitry. The memory device comprises a configuration store, storing the configuration data accessible by the control circuitry to specify location and size of a security memory region in the memory array. Responsive to an external command and the configuration data, the control circuitry can be configured to invoke the security circuitry on an operation specified in the external command in response to accesses into the security memory region, or to not invoke the security circuitry in response to accesses to outside the security memory region.
    Type: Application
    Filed: January 28, 2019
    Publication date: July 30, 2020
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Ken-Hui CHEN, Kuen-Long CHANG, Chin-Hung CHANG, Yu-Chen WANG
  • Publication number: 20200192824
    Abstract: A security memory device coupled to a host includes: a normal region for storing normal data; a security region for storing security data; and a memory controller, coupled to the normal region and to the security region. In response to a first command which is issued from the host and indicates the security memory device to enter a security field, the memory controller allows the host to access the security region. In the security field, the memory controller performs at least one security command set on the security region. In response to a second command which is issued from the host and indicates the security memory device to exit the security field, the memory controller prohibits the host from accessing the security region.
    Type: Application
    Filed: December 12, 2018
    Publication date: June 18, 2020
    Inventors: Yu-Chen WANG, Chia-Jung CHEN, Chin-Hung CHANG, Ken-Hui CHEN
  • Patent number: 10409735
    Abstract: An electronic device includes a processor coupled to a memory device, through a data bus to receive and transmit bits on the data bus. The processor is configured to transmit a message including a first bit indicative of controlling the data bus, address bits indicative of an address identifying the memory device, and a second bit indicative of whether the processor intends to read data from or write data to the memory device; and transmit a third bit indicative of a mode of operation of the memory device.
    Type: Grant
    Filed: April 20, 2016
    Date of Patent: September 10, 2019
    Assignee: Macronix International Co., Ltd.
    Inventors: Kuen Long Chang, Yu Chen Wang, Ken Hui Chen
  • Publication number: 20190019567
    Abstract: The present disclosure, in some embodiments, relates to a method of forming an integrated chip. The method includes forming a test line letter structure having one or more sidewalls continuously extending along a path that defines a shape of an alpha-numeric character from a top-view. The test line letter structure is formed by forming a first polysilicon structure over a substrate and forming a second polysilicon structure over the substrate at a location laterally separated from first polysilicon structure by a dielectric layer.
    Type: Application
    Filed: September 5, 2018
    Publication date: January 17, 2019
    Inventors: Jui-Tsung Lien, Fang-Lan Chu, Hong-Da Lin, Wei Cheng Wu, Ku-Ning Chang, Yu-Chen Wang
  • Patent number: 10163522
    Abstract: The present disclosure relates to a substrate having test line letters that are used to identify a test line on an integrated chip, while avoiding contamination of high-k metal gate processes, and a method of formation. In some embodiments, the substrate has a semiconductor substrate. A test line letter structure is arranged over the semiconductor substrate and has one or more trenches vertically extending between an upper surface of the test letter structure and a lower surface of the test line letter structure. The one or more trenches are arranged within the test line letter structure to form an opening in the upper surface of the test line structure that has a shape of an alpha-numeric character.
    Type: Grant
    Filed: October 15, 2015
    Date of Patent: December 25, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jui-Tsung Lien, Fang-Lan Chu, Hong-Da Lin, Wei Cheng Wu, Ku-Ning Chang, Yu-Chen Wang
  • Publication number: 20180238855
    Abstract: A method for in-line measurement of the quality of a microarray are disclosed and the method includes the following steps. A solid substrate is provided, and the solid substrate includes a plurality of areas in an array. At least one biomarker is in-situ synthesized on at least one of the plurality of areas by a plurality of synthesis steps. After performing at least one of the plurality of synthesis step, a check step is immediately performed on a semi-product of the at least one biomarker by an atomic force microscope to obtain an in-line measurement result. The quality of the semi-product of the at least one biomarker is determined based on the in-line measurement result.
    Type: Application
    Filed: February 14, 2018
    Publication date: August 23, 2018
    Applicant: Centrillion Technologies Taiwan Co. LTD.
    Inventors: Tzu-Kun Ku, Yao-Kuang Chung, Yu-Chen Wang, Po-Yen Liu