Abstract: Described herein are semiconductor devices and structures with improved power handling and heat dissipation. Embodiments are suitable for implementation in gallium nitride. Devices may be provided as individual square or diamond-shaped dies having electrode terminals at the die corners, tapered electrode bases, and interdigitated electrode fingers. Device matrix structures include a plurality of device dies arranged on a substrate in a matrix configuration with interdigitated conductors. Device lattice structures are based on a unit cell comprising a plurality of individual devices, the unit cells disposed on a chip with geometric periodicity. Also described herein are methods for implementing the semiconductor devices and structures.

Abstract: Voltage stabilizing and voltage regulating circuits implemented in GaN HEMT technology provide stable output voltages suitable for use in applications such as GaN power transistor gate drivers and low voltage auxiliary power supplies for GaN integrated circuits. Gate driver and voltage regulator modules include at least one GaN D-mode HEMT (DHEMT) and at least two GaN E-mode HEMTs (EHEMTs) connected together in series, so that the at least one DHEMT operates as a variable resistor and the at least two EHEMTs operate as a Zener diode that limits the output voltage. The gate driver and voltage regulator modules may be implemented as a GaN integrated circuits, and may be monolithically integrated together with other components such as amplifiers and power HEMTs on a single die to provide a GaN HEMT power module IC.

Abstract: Voltage stabilizing and voltage regulating circuits implemented in GaN HEMT technology provide stable output voltages suitable for use in applications such as GaN power transistor gate drivers and low voltage auxiliary power supplies for GaN integrated circuits. Gate driver and voltage regulator modules include at least one GaN D-mode HEMT (DHEMT) and at least two GaN E-mode HEMTs (EHEMTs) connected together in series, so that the at least one DHEMT operates as a variable resistor and the at least two EHEMTs operate as a Zener diode that limits the output voltage. The gate driver and voltage regulator modules may be implemented as a GaN integrated circuits, and may be monolithically integrated together with other components such as amplifiers and power HEMTs on a single die to provide a GaN HEMT power module IC.

Abstract: A gate driver circuit for a gallium nitride (GaN) power transistor includes a RS-flipflop that receives a first pulse train at an S input terminal and a second pulse train at an R input terminal, and produces an output pulse train, and an amplifier that amplifies the output pulse train and produces a gate driver signal for the GaN power transistor. The RS-flipflop and the amplifier may be implemented together on a GaN monolithic integrated circuit, optionally together with the GaN power transistor. The GaN power transistor may be a high-side switch of a half-bridge circuit. The RS-flipflop may be implemented with enhancement mode and depletion mode GaN high electron mobility transistors (HEMTs). Embodiments avoid drawbacks of prior hybrid (e.g., silicon-GaN) approaches, such as parasitic inductances from bonding wires and on-board metal traces, especially at high operating frequencies, as well as reduce implementation cost and improve performance.

Abstract: Use of gallium nitride (GaN) semiconductor material for power devices is challenging due to low yield caused by high defect density on the wafer. Device layout on the wafer, chip probing, and device packaging increase the yield of large area power devices. Device dies containing a plurality of lower-power sub-devices are used to achieve high power ratings, by connecting only functional sub-devices together in the package, while being tolerant of defective sub-devices by selectively excluding the defective sub-devices. The packages and methods are particularly relevant to GaN power switching devices such as high electron mobility transistors (GaN HEMT).

Abstract: This invention relates to interdigitated electrodes for power electronic and optoelectronic devices where field and current distribution determine the device performance. Described are geometries based on rounded asymmetrical fingers and electrode bases of varying width. Simulations demonstrate benefits for reducing self-heating and thermal power loss, which reduces overall on-state resistance and increases reverse break down voltages.

Abstract: A packaged GaN semiconductor device with improved heat dissipation is provided. A GaN device is packaged on a printed circuit board (PCB) with a vertical side of the device, and optionally the back side of the device, in thermal contact with the PCB. The packaging is compatible with surface mount technologies such as land grid array (LGA), ball grid array (BGA), and other formats. Thermal contact between the PCB and a vertical side of the device, and optionally the back side of the device, is made through solder. The solder used for the thermal contact may also connect a source terminal of the device, which also improves electrical stability of the device. The packaging is particularly suitable for GaN HEMT devices.

Abstract: The invention provided Mucorales CotH antibodies, polypeptides, encoding nucleic acid molecules, and uses thereof. The Mucorales CotH antibodies, polypeptides and encoding nucleic acids disclosed herein can be advantageously used to diagnose, treat or prevent fungal conditions, in particular mucormycosis.

Abstract: The invention provides a vaccine including an isolated Als protein family member having cell adhesion activity, or an immunogenic fragment thereof, with an adjuvant in a pharmaceutically acceptable medium. The invention also provides a method of treating or preventing hematogenously disseminated or mucocutaneous candidiasis. The method includes administering an immunogenic amount of a vaccine an isolated Als protein family member having cell adhesion activity, or an immunogenic fragment thereof, in a pharmaceutically acceptable medium. A method of treating or preventing disseminated candidiasis also is provided that includes administering an effective amount of an isolated Als protein family member having cell adhesion activity, or an functional fragment thereof, to inhibit the binding or invasion of Candida to a host cell or tissue.

Abstract: The disclosure features isolated polypeptides of Hyr1. The disclosure further features vaccines and antibodies useful in treating or preventing candidiasis or Acinetobacter infections or both. Further disclosed are isolated polypeptides consisting of between 14 and 20 amino acids for vaccine preparation. The specific amino acid sequences of isolated polypeptides of Hyr1 are also disclosed.

Abstract: A hybrid rectifier that works as either a hybrid full bridge or a voltage doubler. Under 220 V AC input condition, the hybrid rectifier operates in full bridge mode, while at 110 V AC input, it operates as voltage doubler rectifier. The hybrid rectifier may be used with a DC-DC converter, such as an LLC resonant converter, in a power supply. With this mode switching, the LLC converter resonant tank design only takes consideration of 220 V AC input case, such that the required operational input voltage range is reduced, and the efficiency of the LLC converter is optimized. Both the size and power loss are reduced by using a single stage structure instead of the conventional two-stage configuration.

Abstract: A hybrid rectifier that works as either a hybrid full bridge or a voltage doubler. Under 220 V AC input condition, the hybrid rectifier operates in full bridge mode, while at 110 V AC input, it operates as voltage doubler rectifier. The hybrid rectifier may be used with a DC-DC converter, such as an LLC resonant converter, in a power supply. With this mode switching, the LLC converter resonant tank design only takes consideration of 220 V AC input case, such that the required operational input voltage range is reduced, and the efficiency of the LLC converter is optimized. Both the size and power loss are reduced by using a single stage structure instead of the conventional two-stage configuration.

Abstract: Described herein are semiconductor devices and structures with improved power handling and heat dissipation. Embodiments are suitable for implementation in gallium nitride. Devices may be provided as individual square or diamond-shaped dies having electrode terminals at the die corners, tapered electrode bases, and interdigitated electrode fingers. Device matrix structures include a plurality of device dies arranged on a substrate in a matrix configuration with interdigitated conductors. Device lattice structures are based on a unit cell comprising a plurality of individual devices, the unit cells disposed on a chip with geometric periodicity. Also described herein are methods for implementing the semiconductor devices and structures.

Abstract: A hybrid rectifier that works as either a hybrid full bridge or a voltage doubler. Under 220 V AC input condition, the hybrid rectifier operates in full bridge mode, while at 110 V AC input, it operates as voltage doubler rectifier. The hybrid rectifier may be used with a DC-DC converter, such as an LLC resonant converter, in a power supply. With this mode switching, the LLC converter resonant tank design only takes consideration of 220 V AC input case, such that the required operational input voltage range is reduced, and the efficiency of the LLC converter is optimized. Both the size and power loss are reduced by using a single stage structure instead of the conventional two-stage configuration.

Abstract: A hybrid rectifier that works as either a hybrid full bridge or a voltage doubler. Under 220 V AC input condition, the hybrid rectifier operates in full bridge mode, while at 110 V AC input, it operates as voltage doubler rectifier. The hybrid rectifier may be used with a DC-DC converter, such as an LLC resonant converter, in a power supply. With this mode switching, the LLC converter resonant tank design only takes consideration of 220 V AC input case, such that the required operational input voltage range is reduced, and the efficiency of the LLC converter is optimized. Both the size and power loss are reduced by using a single stage structure instead of the conventional two-stage configuration.

Abstract: Described herein are semiconductor devices and structures with improved power handling and heat dissipation. Embodiments are suitable for implementation in gallium nitride. Devices may be provided as individual square or diamond-shaped dies having electrode terminals at the die corners, tapered electrode bases, and interdigitated electrode fingers. Device matrix structures include a plurality of device dies arranged on a substrate in a matrix configuration with interdigitated conductors. Device lattice structures are based on a unit cell comprising a plurality of individual devices, the unit cells disposed on a chip with geometric periodicity. Also described herein are methods for implementing the semiconductor devices and structures.

Abstract: A peristaltic pump includes a driver, a pump body, a hose, a rotor and a connecting member. The driver includes a supporting shaft. The pump body includes a chamber housing the rotor. The hose is assembled to an internal side of a wall of the chamber. The connecting member connects the driver with the rotor, and is received in the chamber. The rotor is configured to sequentially squeeze the hose to cause medium in the hose to flow. The connecting member and the rotor rotate about and are supported by the supporting shaft. The medical peristaltic pump has a simple structure and is easy to operate.

Abstract: This invention relates to interdigitated electrodes for power electronic and optoelectronic devices where field and current distribution determine the device performance. Described are geometries based on rounded asymmetrical fingers and electrode bases of varying width. Simulations demonstrate benefits for reducing self-heating and thermal power loss, which reduces overall on-state resistance and increases reverse break down voltages.

Abstract: A Candida albicans bloodstream infections cause significant morbidity and mortality in hospitalized patients. Filament formation and adherence to host cells are critical virulence factors of C. albicans. Multiple filamentation regulatory pathways have been discovered, however the downstream effectors of these regulatory pathways remain unknown. The cell surface proteins in the ALS group are downstream effectors of the filamentation regulatory pathway. Particularly, Als1p mediates adherence to endothelial cells in vitro and is required for virulence. The blocking of adherence by the organism is described resulting from the use of a composition and method disclosed herein. Specifically, a pharmaceutical composition comprised of a gene, gene product, or specific antibody to the ALS gene family is administered as a vaccine to generate an immune response capable of blocking adherence of the organism.

Abstract: The subject technology relates to a method including steps for disposing a first electrically conductive material on a substrate to form a first layer of electrodes on the substrate, wherein the first layer includes a source electrode and a drain electrode, and printing a film including carbon nanotubes between the source electrode and the drain electrode, thereby defining at least a first interface between the carbon nanotube film and the source electrode and a second interface between the carbon nanotube film and drain electrode. In certain aspects, the method can further include steps for disposing a second electrically conductive material over the first interface between the carbon nanotube film and the source electrode and the second interface between the carbon nanotube film and the drain electrode. In certain aspects, a transistor device is also provided.