Abstract: A device including a p-type semiconductor device and an n-type semiconductor device on a semiconductor substrate. The n-type semiconductor device includes a gate structure having a high-k gate dielectric. A carbon dopant in a concentration ranging from 1×1016 atoms/cm3 to 1×1021 atoms/cm3 is present at an interface between the high-k gate dielectric of the gate structure for the n-type semiconductor device and the semiconductor substrate. Methods of forming the aforementioned device are also disclosed.

Abstract: In one embodiment, a semiconductor device is provided that includes a semiconductor substrate including an active region and at least one trench isolation region at a perimeter of the active region, and a functional gate structure present on a portion of the active region of the semiconductor substrate. Embedded semiconductor regions are present in the active region of the semiconductor substrate on opposing sides of the portion of the active region that the functional gate structure is present on. A portion of the active region of the semiconductor substrate separates the outermost edge of the embedded semiconductor regions from the at least one isolation region. Methods of forming the aforementioned device are also provided.

Abstract: The invention relates to bifunctional stapled or stitched peptides comprising a targeting domain, a linker moiety, and an effector domain, that can be used to tether, or to bring into close proximity, at least two cellular entities (e.g., proteins). Certain aspects relate to bifunctional stapled or stitched peptides that bind to an effector biomolecule through the effector domain and bind to a target biomolecule through the targeting domain. Polypeptides and/or polypeptide complexes that are tethered by the bifunctional stapled or stitched peptides of the invention, where the effector polypeptide bound to the effector domain of the bifunctional stapled or stitched peptide modifies or alters the target polypeptide bound to the targeting domain of the bifunctional peptide. Uses of the inventive bifunctional stapled or stitched peptides including methods for treatment of disease (e.g., cancer, inflammatory diseases) are also provided.

Abstract: A method of coupling optical fibers containing cores or other structures that twist about the axis of one or both fibers. The fiber end faces are aligned axially to confront one another, and side view images of end regions of the fibers including the contained cores or structures are produced. For each fiber, a brightness profile of a side view image is obtained at an axially offset position from the fiber end face. One or both fibers are rotated about their axes until the brightness profiles for each fiber indicate certain cores or structures in the fibers are aligned. For each fiber, an additional amount of twist from the offset position to the fiber end face is determined. One or both fibers are rotated again to compensate for the additional twist in each fiber, so that the fibers are aligned optimally when coupled.

Abstract: A method including forming a structure including a plurality of semiconductor devices surrounded by a dielectric layer such that a top surface of the dielectric layer is substantially flush with a top surface of the plurality of semiconductor devices, depositing a thermal optimization layer above the structure, patterning the thermal optimization layer such that a portion of the thermal optimization layer is removed from a above first region of the structure and another portion of the thermal optimization layer remains above a second region of the structure, the first region having a different thermal conductivity than the second region, and heating the structure, the patterned thermal optimization layer causing substantially uniform thermal absorption of the structure.

Abstract: A light hood for a fiber identifier tool that includes a head portion having interior photo detectors, a slot for receiving an optical fiber to be tested, and a clamp mechanism for urging the fiber to bend in the vicinity of the photo detectors when the mechanism is operated. The hood has a generally T-shaped body that defines a lower hood portion arranged to engage the clamp mechanism and operate the mechanism when the lower hood portion is pulled downward by a user. An upper hood portion of the body is configured so that when the lower hood portion is engaged with the clamp mechanism and pulled downward, the upper hood portion descends to cover the head portion of the tool including the slot. Outside light is then blocked from entering the slot and reaching the photo detectors whenever a fiber is tested by the tool, thus preventing false indications.

Abstract: Provided herein are stapled or stitched polypeptides comprising an alpha-helical segment, wherein the polypeptide binds to the insulin receptor, and wherein the polypeptide comprises at least two cross-linked amino acids as shown in Formula (iii), or at least three cross-linked amino acids as shown in Formula (iv). Further provided are pharmaceutical compositions comprising the stapled or stitched polypeptides, methods of use, e.g., methods of treating a diabetic condition or complications thereof. Precursor “unstapled” polypeptides useful in the preparation of stapled and stitched polypeptides are also described.

Abstract: In one embodiment, a semiconductor device is provided that includes a semiconductor substrate including an active region and at least one trench isolation region at a perimeter of the active region, and a functional gate structure present on a portion of the active region of the semiconductor substrate. Embedded semiconductor regions are present in the active region of the semiconductor substrate on opposing sides of the portion of the active region that the functional gate structure is present on. A portion of the active region of the semiconductor substrate separates the outermost edge of the embedded semiconductor regions from the at least one isolation region. Methods of forming the aforementioned device are also provided.

Abstract: A complementary metal oxide semiconductor (CMOS) device including a substrate including a first active region and a second active region, wherein each of the first active region and second active region of the substrate are separated by from one another by an isolation region. A n-type semiconductor device is present on the first active region of the substrate, in which the n-type semiconductor device includes a first portion of a gate structure. A p-type semiconductor device is present on the second active region of the substrate, in which the p-type semiconductor device includes a second portion of the gate structure. A connecting gate portion provides electrical connectivity between the first portion of the gate structure and the second portion of the gate structure. Electrical contact to the connecting gate portion is over the isolation region, and is not over the first active region and/or the second active region.

Abstract: A structure includes a substrate; a transistor disposed over the substrate, the transistor comprising a fin comprised of Silicon that is implanted with Carbon; and a gate dielectric layer and gate metal layer overlying a portion of the fin that defines a channel of the transistor. In the structure a concentration of Carbon within the fin is selected to establish a desired voltage threshold of the transistor. Methods to fabricate a FinFET transistor are also disclosed. Also disclosed is a planar transistor having a Carbon-implanted well where the concentration of the Carbon within the well is selected to establish a desired voltage threshold of the transistor.

Abstract: A method of forming a semiconductor device comprising a dummy gate interconnect includes forming a dummy gate on a substrate, the dummy gate comprising a dummy gate metal layer located on the substrate, and a dummy gate polysilicon layer located on the dummy gate metal layer; forming an active gate on the substrate, the active gate comprising an active gate metal layer located on the substrate, and an active gate polysilicon layer located on the active gate metal layer; and etching the dummy gate polysilicon layer to remove at least a portion of the dummy gate polysilicon layer to form the dummy gate interconnect, wherein the active gate polysilicon layer is not etched during the etching of the dummy gate polysilicon layer.

Abstract: A live fiber identifier tool includes a head portion having a slot. A cable containing a pair of optical fibers can be inserted in the slot and forced to bend inside the head portion when a trigger is operated. Any light signal in a given fiber partially leaks from the fiber and exits the cable bend. Two photo detectors are located so that one of the detectors receives more light from the cable bend than the other detector depending on the signal direction in the given fiber. Processing components coupled to the detectors and the indicator define a threshold factor that corresponds to a determined difference between the outputs of the detectors. If the difference between the detector outputs does not exceed the threshold factor, an indicator on the tool reports that light signals are traveling in the pair of optical fibers in opposite directions along the cable.

Abstract: A semiconductor structure including a p-channel field effect transistor (pFET) device located on a surface of a silicon germanium (SiGe) channel is provided in which the junction profile of the source/drain region is abrupt. The abrupt source/drain junctions for pFET devices are provided by forming an N- or C-doped Si layer directly beneath a SiGe channel layer which is located above a Si substrate. A structure is provided in which the N- or C-doped Si layer (sandwiched between the SiGe channel layer and the Si substrate) has approximately the same diffusion rate for a p-type dopant as the overlying SiGe channel layer. Since the N- or C-doped Si layer and the overlying SiGe channel layer have substantially the same diffusivity for a p-type dopant and because the N- or C-doped Si layer retards diffusion of the p-type dopant into the underlying Si substrate, abrupt source/drain junctions can be formed.

Abstract: In one embodiment, a semiconductor device is provided that includes a semiconductor substrate including an active region and at least one trench isolation region at a perimeter of the active region, and a functional gate structure present on a portion of the active region of the semiconductor substrate. Embedded semiconductor regions are present in the active region of the semiconductor substrate on opposing sides of the portion of the active region that the functional gate structure is present on. A portion of the active region of the semiconductor substrate separates the outermost edge of the embedded semiconductor regions from the at least one isolation region. Methods of forming the aforementioned device are also provided.

Abstract: A complementary metal oxide semiconductor (CMOS) device including a substrate including a first active region and a second active region, wherein each of the first active region and second active region of the substrate are separated by from one another by an isolation region. A n-type semiconductor device is present on the first active region of the substrate, in which the n-type semiconductor device includes a first portion of a gate structure. A p-type semiconductor device is present on the second active region of the substrate, in which the p-type semiconductor device includes a second portion of the gate structure. A connecting gate portion provides electrical connectivity between the first portion of the gate structure and the second portion of the gate structure. Electrical contact to the connecting gate portion is over the isolation region, and is not over the first active region and/or the second active region.

Abstract: A live fiber identifier tool includes a head portion having a slot. A cable containing a pair of optical fibers can be inserted in the slot and forced to bend inside the head portion when a trigger is operated. Any light signal in a given fiber partially leaks from the fiber and exits the cable bend. Two photo detectors are located so that one of the detectors receives more light from the cable bend than the other detector depending on the signal direction in the given fiber. Processing components coupled to the detectors and the indicator define a threshold factor that corresponds to a determined difference between the outputs of the detectors. If the difference between the detector outputs does not exceed the threshold factor, an indicator on the tool reports that light signals are traveling in the pair of optical fibers in opposite directions along the cable.

Abstract: A light hood for a fiber identifier tool that includes a head portion having interior photo detectors, a slot for receiving an optical fiber to be tested, and a clamp mechanism for urging the fiber to bend in the vicinity of the photo detectors when the mechanism is operated. The hood has a generally T-shaped body that defines a lower hood portion arranged to engage the clamp mechanism and operate the mechanism when the lower hood portion is pulled downward by a user. An upper hood portion of the body is configured so that when the lower hood portion is engaged with the clamp mechanism and pulled downward, the upper hood portion descends to cover the head portion of the tool including the slot. Outside light is then blocked from entering the slot and reaching the photo detectors whenever a fiber is tested by the tool, thus preventing false indications.

Abstract: In one embodiment, a semiconductor device is provided that includes a semiconductor substrate including an active region and at least one trench isolation region at a perimeter of the active region, and a functional gate structure present on a portion of the active region of the semiconductor substrate. Embedded semiconductor regions are present in the active region of the semiconductor substrate on opposing sides of the portion of the active region that the functional gate structure is present on. A portion of the active region of the semiconductor substrate separates the outermost edge of the embedded semiconductor regions from the at least one isolation region. Methods of forming the aforementioned device are also provided.

Abstract: A multicore fiber alignment apparatus is described, having a chassis into which is mounted ferrule-holding means for holding a multicore fiber ferrule having one or more capillaries extending therethrough. Fiber-holding means for holding one or more multicore fibers in position to be mounted into the ferrule, such that each multicore fiber extends through a respective ferrule capillary. Means are provided for monitoring the rotation angle of each multicore fiber within its respective capillary, relative to a reference rotational orientation. Means are further provided for rotating each of the multicore fibers within its respective capillary. The rotational orientation of each multicore fiber is fixed when its rotation angle is equal to zero.

Abstract: A semiconductor structure including a p-channel field effect transistor (pFET) device located on a surface of a silicon germanium (SiGe) channel is provided in which the junction profile of the source/drain region is abrupt. The abrupt source/drain junctions for pFET devices are provided by forming an N- or C-doped Si layer directly beneath a SiGe channel layer which is located above a Si substrate. A structure is provided in which the N- or C-doped Si layer (sandwiched between the SiGe channel layer and the Si substrate) has approximately the same diffusion rate for a p-type dopant as the overlying SiGe channel layer. Since the N- or C-doped Si layer and the overlying SiGe channel layer have substantially the same diffusivity for a p-type dopant and because the N- or C-doped Si layer retards diffusion of the p-type dopant into the underlying Si substrate, abrupt source/drain junctions can be formed.