Abstract: Solid forms of N-[2,4-bis(1,1-dimethylethyl)-5-hydroxyphenyl]-1,4-dihydro-4-oxoquinoline-3-carboxamide are described herein, including crystalline forms thereof.

Abstract: Apparatus and system, as well as fabrication methods therefor, may include a thermal intermediate structure comprised of a plurality of carbon nanotubes some of which have organic moieties attached thereto to tether the nanotubes to at least one of a die and a heat sink. The organic moieties include thiol linkers and amide linkers.

Abstract: Carbon nanotubes may be selectively opened and their exposed ends functionalized. Opposite ends of carbon nanotubes may be functionalized in different fashions to facilitate self-assembly and other applications.

Abstract: Apparatus and system, as well as fabrication methods therefor, may include a thermal intermediate structure comprised of a plurality of carbon nanotubes some of which have organic moieties attached thereto to tether the nanotubes to at least one of a die and a heat sink. The organic moieties include thiol linkers and amide linkers.

Abstract: Disclosed herein are methods, apparatuses, and systems for performing nucleic acid sequencing reactions and molecular binding reactions in a microfluidic channel. The methods, apparatuses, and systems can include a restriction barrier to restrict movement of a particle to which a nucleic acid is attached. Furthermore, the methods, apparatuses, and systems can include hydrodynamic focusing of a delivery flow. In addition, the methods, apparatuses, and systems can reduce non-specific interaction with a surface of the microfluidic channel by providing a protective flow between the surface and a delivery flow.

Abstract: According to one aspect of the invention, a semiconducting transistor is described. The channel portion of the transistor includes carbon nanotubes formed on top of an insulating layer which covers a local bottom gate. Source and drain conductors are located at ends of the carbon nanotubes. A gate dielectric surrounds a portion of the carbon nanotubes with a substantially uniform thickness. A local top gate is located between the source and drain conductors over the carbon nanotubes. Lower portions of the local top gate are positioned between the carbon nanotubes as the local top gate forms pi-gates or “wraparound” gates around each carbon nanotube.

Abstract: Carbon nanotube orientation may be detected by exposing the carbon nanotube to a pair of laser beams oriented transversely to one another. By observing the effect on the intensity of transmitted light from a first laser beam when the polarization of the second laser beam is changed, the carbon nanotube orientation can be derived.

Abstract: A method is described that comprises sorting carbon nanotubes (CNTs) within a fluidic flow for a targeted subset of the CNTs. The sorting comprises attracting at least a portion of the CNTs within the fluidic flow in a direction of increasing intensity of an electric field component of a substantially stationary beam of light. The electric field component has a frequency that is less than one or more resonant frequencies of the CNTs within the portion.

Abstract: Carbon nanotube orientation may be detected by exposing the carbon nanotube to a pair of laser beams oriented transversely to one another. By observing the effect on the intensity of transmitted light from a first laser beam when the polarization of the second laser beam is changed, the carbon nanotube orientation can be derived.

Abstract: Methods of forming a microelectronic structure are described. Embodiments of those methods include attaching at least one functional group to a chondroitin sulfate molecule, and then attaching the at least one functional group to a carbon nanotube, wherein the carbon nanotube is made soluble in a solution.

Abstract: An embodiment of the present invention is a technique to control carbon nanotubes (CNTs). A laser beam is focused to a carbon nanotube (CNT) in a fluid. The CNT is responsive to a trapping frequency. The CNT is manipulated by controlling the focused laser beam.

Abstract: An embodiment of the present invention is a technique to control carbon nanotubes (CNTs). A laser beam is focused to a carbon nanotube (CNT) in a fluid. The CNT is responsive to a trapping frequency. The CNT is manipulated by controlling the focused laser beam.

Abstract: An embodiment of the present invention is a technique to monitor carbon nanotubes (CNTs). A carbon nanotube (CNT) is manipulated in a fluid by a laser beam. An illuminating light from a light source is aligned along axis of the CNT to produce an optical response from the CNT. The CNT is monitored using an optical sensor according to the optical response.

Abstract: Phase change memories may be formed with nanofiber bottom electrodes or heaters. Because of the use of the relatively well controlled, small diameter nanofibers, better current density, and lower current utilization may be achieved, in some cases, because less phase change material may need to change phase. In some embodiments, the nanofibers may be carbon nanotubes having diameters less than 50 nanometers and heights of greater than 50 nanometers.

Abstract: According to one aspect of the invention, a semiconducting transistor is described. The channel portion of the transistor includes carbon nanotubes formed on top of an insulating layer which covers a local bottom gate. Source and drain conductors are located at ends of the carbon nanotubes. A gate dielectric surrounds a portion of the carbon nanotubes with a substantially uniform thickness. A local top gate is located between the source and drain conductors over the carbon nanotubes. Lower portions of the local top gate are positioned between the carbon nanotubes as the local top gate forms pi-gates or “wraparound” gates around each carbon nanotube.

Abstract: An embodiment of the present invention is a technique to monitor carbon nanotubes (CNTs). A carbon nanotube (CNT) is manipulated in a fluid by a laser beam. An illuminating light from a light source is aligned along axis of the CNT to produce an optical response from the CNT. The CNT is monitored using an optical sensor according to the optical response.

Abstract: In embodiments of the present invention, the electric field of a focused laser beam induces a dipole in a single-walled carbon nanotube. The single-walled carbon nanotube has one or more resonant frequencies. When the frequency of the laser beam is less than a resonance frequency of the single-walled carbon nanotube, the single-walled carbon nanotube may be trapped and the laser beam may move the single-walled carbon nanotube from a first microfluidic laminar flow to a second microfluidic laminar flow. When the frequency of the laser beam is higher than a resonant frequency of the single-walled carbon nanotube, the single-walled carbon nanotube may be repelled and the laser beam may not move the single-walled carbon nanotube.

Abstract: An embodiment is a transistor for non-volatile memory that combines nanocrystal and nanotube paradigm shifts. In particular an embodiment is a transistor-based non-volatile memory element that utilizes a carbon nanotube channel region and nanocrystal charge storage regions. Such a combination enables a combination of low power, low read and write voltages, high charge retention, and high bit density. An embodiment further exhibits a large memory window and a single-electron drain current.

Abstract: A method is described that comprises sorting carbon nanotubes (CNTs) within a fluidic flow for a targeted subset of the CNTs. The sorting comprises attracting at least a portion of the CNTs within the fluidic flow in a direction of increasing intensity of an electric field component of a substantially stationary beam of light. The electric field component has a frequency that is less than one or more resonant frequencies of the CNTs within the portion.

Abstract: A carbon nanotube is contacted with a reactive substance which is a metal or a semiconductor. The reactive substance is heated to diffuse atoms of the reactive substance into the carbon nanotube so that the carbon nanotube is partially transformed or converted into carbide as a reaction product. Thus, a heterojunction of the reaction product and the carbon nanotube is formed. For example, the carbon nanotube (2) is contacted with a silicon substrate (1). The silicon substrate (1) is heated to cause solid-solid diffusion of Si. As a result, SiC (3) is formed as the heterojunction. At least a part of a filament material of a carbon nanotube is irradiated with electromagnetic wave to deform the filament material.