Patents by Inventor Yueh-Chin Lin
Yueh-Chin Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230261083Abstract: A method of manufacturing a semiconductor device includes providing a substrate. A channel layer is formed on the substrate. A barrier layer is formed on the channel layer. A source and a drain are formed on the barrier layer. A recess is formed in the barrier layer, in which the recess has a bottom surface, and a portion of the barrier underneath the recess has a thickness. A first dielectric layer is formed to cover the bottom surface of the recess. A charge trapping layer is formed on the first dielectric layer. A first ferroelectric material layer is formed on the charge trapping layer. A second dielectric layer is formed on the first ferroelectric material layer. A second ferroelectric material layer is formed on the second dielectric layer. A gate is formed over the second ferroelectric material layer.Type: ApplicationFiled: April 20, 2023Publication date: August 17, 2023Inventors: Edward Yi CHANG, Shih-Chien LIU, Chung-Kai HUANG, Chia-Hsun WU, Ping-Cheng HAN, Yueh-Chin LIN, Ting-En HSIEH
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Patent number: 11670699Abstract: A semiconductor device includes a substrate, a channel layer, a barrier layer, a ferroelectric composite material layer, a gate, a source and a drain. The channel layer and the barrier layer having a recess are disposed on the substrate in sequence. The ferroelectric composite material layer including a first dielectric layer, a charge trapping layer, a first ferroelectric material layer, a second dielectric layer and a second ferroelectric material layer is disposed in the recess. The gate is disposed on the ferroelectric composite material layer. The source and the drain are disposed on the barrier layer.Type: GrantFiled: March 4, 2020Date of Patent: June 6, 2023Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITYInventors: Edward Yi Chang, Shih-Chien Liu, Chung-Kai Huang, Chia-Hsun Wu, Ping-Cheng Han, Yueh-Chin Lin, Ting-En Hsieh
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Patent number: 11367615Abstract: A method of fabricating transistors with short gate length by two-step photolithography is provided. This method utilizes the two-step photolithography by a stepper as well as controlling a first exposed position and a second exposed position to change the gate length.Type: GrantFiled: May 1, 2020Date of Patent: June 21, 2022Assignee: National Chiao Tung UniversityInventors: Yi Chang, Yueh-Chin Lin, Po-Sheng Chang
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Patent number: 11322398Abstract: A process for making an interconnect of a group III-V semiconductor device includes the steps of applying a positive photoresist layer and an image-reversible photoresist layer, subjecting the image-reversible photoresist and positive photoresist layers to patternwise exposure, subjecting the image-reversible photoresist layer to image reversal bake, subjecting the image-reversible photoresist and positive photoresist layers to flood exposure, subjecting the image-reversible photoresist and positive photoresist layers to development, depositing a diffusion barrier layer, depositing a copper layer, and removing the image-reversible photoresist and positive photoresist layers.Type: GrantFiled: December 3, 2019Date of Patent: May 3, 2022Assignee: NATIONAL CHIAO TUNG UNIVERSITYInventors: Edward-Yi Chang, Yueh-Chin Lin, Ming-Yen Tsai, Po-Sheng Chang
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Publication number: 20210151316Abstract: A method of fabricating transistors with short gate length by two-step photolithography is provided. This method utilizes the two-step photolithography by a stepper as well as controlling a first exposed position and a second exposed position to change the gate length.Type: ApplicationFiled: May 1, 2020Publication date: May 20, 2021Inventors: Yi Chang, Yueh-Chin Lin, Po-Sheng Chang
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Publication number: 20210074582Abstract: A process for making an interconnect of a group III-V semiconductor device includes the steps of applying a positive photoresist layer and an image-reversible photoresist layer, subjecting the image-reversible photoresist and positive photoresist layers to patternwise exposure, subjecting the image-reversible photoresist layer to image reversal bake, subjecting the image-reversible photoresist and positive photoresist layers to flood exposure, subjecting the image-reversible photoresist and positive photoresist layers to development, depositing a diffusion barrier layer, depositing a copper layer, and removing the image-reversible photoresist and positive photoresist layers.Type: ApplicationFiled: December 3, 2019Publication date: March 11, 2021Inventors: Edward-Yi CHANG, Yueh-Chin LIN, Ming-Yen TSAI, Po-Sheng CHANG
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Publication number: 20200203499Abstract: A semiconductor device includes a substrate, a channel layer, a barrier layer, a ferroelectric composite material layer, a gate, a source and a drain. The channel layer and the barrier layer having a recess are disposed on the substrate in sequence. The ferroelectric composite material layer including a first dielectric layer, a charge trapping layer, a first ferroelectric material layer, a second dielectric layer and a second ferroelectric material layer is disposed in the recess. The gate is disposed on the ferroelectric composite material layer. The source and the drain are disposed on the barrier layer.Type: ApplicationFiled: March 4, 2020Publication date: June 25, 2020Inventors: Edward Yi CHANG, Shih-Chien LIU, Chung-Kai HUANG, Chia-Hsun WU, Ping-Cheng HAN, Yueh-Chin LIN, Ting-En HSIEH
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Publication number: 20180175185Abstract: A semiconductor device includes a substrate, a channel layer, a barrier layer, a recess, a charge trapping layer, a ferroelectric material layer, a gate, a source and a drain. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The barrier layer has a recess, and a portion of the barrier layer under the recess has a thickness. The source and the drain are disposed on the barrier layer. The charge trapping layer covers the bottom of the recess. The ferroelectric material is disposed on the charge trapping layer. The gate is disposed on the ferroelectric material.Type: ApplicationFiled: July 10, 2017Publication date: June 21, 2018Inventors: Edward Yi CHANG, Shih-Chien LIU, Chung-Kai HUANG, Chia-Hsun WU, Ping-Cheng HAN, Yueh-Chin LIN, Ting-En HSIEH
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Publication number: 20160133738Abstract: A high electron mobility transistor is realized in the present invention by a gate recessed structure, a high permittivity oxide layer and a nitride-based interfacial passivation layer, featuring high threshold voltage, high transconductance, highly stable drain output current, and high reliability.Type: ApplicationFiled: January 14, 2015Publication date: May 12, 2016Inventors: Edward Yi CHANG, Yueh-Chin LIN, Ting-En HSIEH
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Patent number: 9240474Abstract: An enhanced GaN transistor is provided. The structure comprises a substrate, a heterostructure, a p-element epitaxy growth layer, a drain ohmic contact and a source ohmic contact disposed on the heterostructure and on two sides of the p-element epitaxy growth layer, a gate structure disposed on the p-element epitaxy growth layer, and is separated from the drain ohmic contact and the source ohmic contact, a surface passivation layer covered the drain ohmic contact, source ohmic contact, and p-element epitaxy growth layer, and covered portion of the gate structure.Type: GrantFiled: October 10, 2013Date of Patent: January 19, 2016Assignee: National Chiao Tung UniversityInventors: Yi Chang, Yueh-Chin Lin, Huan-Chung Wang
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Publication number: 20140346523Abstract: An enhanced GaN transistor is provided. The structure comprises a substrate, a heterostructure, a p-element epitaxy growth layer, a drain ohmic contact and a source ohmic contact disposed on the heterostructure and on two sides of the p-element epitaxy growth layer, a gate structure disposed on the p-element epitaxy growth layer, and is separated from the drain ohmic contact and the source ohmic contact, a surface passivation layer covered the drain ohmic contact, source ohmic contact, and p-element epitaxy growth layer, and covered portion of the gate structure.Type: ApplicationFiled: October 10, 2013Publication date: November 27, 2014Applicant: National Chiao Tung UniversityInventors: Yi CHANG, Yueh-Chin LIN, Huan-Chung WANG
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Patent number: 8796117Abstract: A structure of high electron mobility transistor growth on Si substrate and the method thereof, in particular used for the semiconductor device manufacturing in the semiconductor industry. The UHVCVD system was used in the related invention to grow a Ge film on Si substrate then grow the high electron mobility transistor on the Ge film for the reduction of buffer layer thickness and cost. The function of the Ge film is preventing the formation of silicon oxide when growing III-V MHEMT structure in MOCVD system on Si substrate. The reason of using MHEMT in the invention is that the metamorphic buffer layer in MHEMT structure could block the penetration of dislocation which is formed because of the very large lattice mismatch (4.2%) between Ge and Si substrate.Type: GrantFiled: July 30, 2012Date of Patent: August 5, 2014Assignee: National Chiao Tung UniversityInventors: Edward Yi Chang, Shih-Hsuan Tang, Yueh-Chin Lin
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Publication number: 20140151710Abstract: The invention provides a stacked gate structure and metal-oxide-semiconductor including the same, and method for manufacturing the stacked gate structure. The stacked gate structure comprises a substrate, a semiconductor layer positioned on the substrate, a gate dielectric positioned on the semiconductor layer, and a gate electrode layer positioned on the gate dielectric, which the gate dielectric comprises a composite oxide layer composed of lanthanum oxide (La2O3) and hafnium oxide (HfO2).Type: ApplicationFiled: March 8, 2013Publication date: June 5, 2014Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: Yueh-Chin LIN, Edward Yi CHANG, Ting-Wei CHUANG
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Patent number: 8735904Abstract: A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.Type: GrantFiled: February 8, 2012Date of Patent: May 27, 2014Assignee: National Chiao Tung UniversityInventors: Yi Chang, Chia-Hua Chang, Yueh-Chin Lin, Yu-Kong Chen, Ting-En Shie
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Patent number: 8519488Abstract: A hafnium oxide layer, between a III-V semiconductor layer and a metal oxide layer is used to prevent interaction between the III-V semiconductor layer and the metal oxide layer.Type: GrantFiled: February 4, 2013Date of Patent: August 27, 2013Assignee: National Chiao Tung UniversityInventors: Edward Yi Chang, Yueh-Chin Lin
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Publication number: 20130175537Abstract: A high electron mobility GaN-based transistor structure comprises a substrate, an epitaxial GaN layer formed on the substrate, at least one ohmic contact layer formed on the epitaxial GaN layer, a metallic gate layer formed on the epitaxial GaN layer, and a diffusion barrier layer interposed between the metallic gate layer and the epitaxial GaN layer. The diffusion barrier layer hinders metallic atoms of the metallic gate layer from diffusing into the epitaxial GaN layer, whereby are improved the electric characteristics and reliability of the GaN-based transistor.Type: ApplicationFiled: April 25, 2012Publication date: July 11, 2013Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: EDWARD YI CHANG, CHIA-HUA CHANG, YUEH-CHIN LIN, YU KONG CHEN, SHIH-CHIEN LIU
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Publication number: 20130153886Abstract: The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a III-V semiconductor layer; an aluminum oxide layer formed on the III-V semiconductor layer; and a lanthanide oxide layer formed on the aluminum oxide layer. The method of manufacturing a semiconductor device includes: forming an aluminum oxide layer between a III-V semiconductor layer and a lanthanide oxide layer so as to prevent an inter-reaction of atoms between the III-V semiconductor layer and the lanthanide oxide layer.Type: ApplicationFiled: May 22, 2012Publication date: June 20, 2013Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: Edward Yi. Chang, Yueh-Chin Lin, Chia-Hua Chang, Hai-Dang Trinh
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Patent number: 8435875Abstract: A method for forming a T-shaped gate is provided. The method includes providing a substrate. Then, a photoresist structure is formed over the substrate. The photoresist structure includes two development rates. Next, a mask with an opening is formed over the photoresist structure to pattern the photoresist structure. An angle exposure is applied to the photoresist structure, and the exposed photoresist structure is developed to form a T-shaped notch. A width of the T-shaped notch is gradually reduced from a top portion thereof to a bottom portion to expose a surface of the substrate. Then, a gate metal is deposited in the T-shaped notch. Thereafter, the patterned photoresist structure is removed to form the T-shaped gate.Type: GrantFiled: June 6, 2012Date of Patent: May 7, 2013Assignee: National Chiao Tung UniversityInventors: Edward Yi Chang, Lu-Che Huang, Chia-Hua Chang, Yueh-Chin Lin, Wei-Hua Chieng, Shih-Chien Liu
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Patent number: 8420421Abstract: A method for fabricating a GaN-based thin film transistor includes: forming a semiconductor epitaxial layer on a substrate, the semiconductor epitaxial layer having a n-type GaN-based semiconductor material; forming an insulating layer on the semiconductor epitaxial layer; forming an ion implanting mask on the insulating layer, the ion implanting mask having an opening to partially expose the insulating layer; ion-implanting a p-type impurity through the opening and the insulating layer to form a p-doped region in the n-type GaN-based semiconductor material, followed by removing the insulating layer and the ion implanting mask; forming a dielectric layer on the semiconductor epitaxial layer; partially removing the dielectric layer; forming source and drain electrodes; and forming a gate electrode.Type: GrantFiled: May 27, 2011Date of Patent: April 16, 2013Assignee: National Chiao Tung UniversityInventors: Yi Chang, Chia-Hua Chang, Yueh-Chin Lin
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Publication number: 20130049070Abstract: A structure of high electron mobility transistor growth on Si substrate and the method thereof, in particular used for the semiconductor device manufacturing in the semiconductor industry. The UHVCVD system was used in the related invention to grow a Ge film on Si substrate then grow the high electron mobility transistor on the Ge film for the reduction of buffer layer thickness and cost. The function of the Ge film is preventing the formation of silicon oxide when growing III-V MHEMT structure in MOCVD system on Si substrate. The reason of using MHEMT in the invention is that the metamorphic buffer layer in MHEMT structure could block the penetration of dislocation which is formed because of the very large lattice mismatch (4.2%) between Ge and Si substrate.Type: ApplicationFiled: July 30, 2012Publication date: February 28, 2013Inventors: Edward YI CHANG, Shih-Hsuan Tang, Yueh-Chin Lin