Abstract: A semiconductor package fabrication method comprises the steps of providing a wafer, applying a seed layer, forming a photo resist layer, plating a copper layer, removing the photo resist layer, removing the seed layer, applying a grinding process, forming metallization, and applying a singulation process. A semiconductor package comprises a silicon layer, an aluminum layer, a passivation layer, a polyimide layer, a copper layer, and metallization. In one example, an area of a contact area of a gate clip is smaller than an area of a gate copper surface. The area of the contact area of the gate clip is larger than a gate aluminum surface. In another example, an area of a contact area of a gate pin is larger than an area of a gate copper surface. The area of the contact area of the gate pin is larger than a gate aluminum surface.

Abstract: A semiconductor package fabrication method comprises the steps of providing a wafer, applying a seed layer, forming a photo resist layer, plating a copper layer, removing the photo resist layer, removing the seed layer, applying a grinding process, forming metallization, and applying a singulation process. A semiconductor package comprises a silicon layer, an aluminum layer, a passivation layer, a polyimide layer, a copper layer, and metallization. In one example, an area of a contact area of a gate clip is smaller than an area of a gate copper surface. The area of the contact area of the gate clip is larger than a gate aluminum surface. In another example, an area of a contact area of a gate pin is larger than an area of a gate copper surface. The area of the contact area of the gate pin is larger than a gate aluminum surface.

Abstract: A process is applied to develop a plurality of reverse conducting insulated gate bipolar transistors (RCIGBTs). The process comprises the steps of providing a wafer, applying a first grinding process, patterning a mask, applying an etching process, removing the mask, implanting N++ type dopant, applying a second grinding process forming a TAIKO ring, implanting P+ type dopant, annealing and depositing TiNiAg or TiNiVAg, removing the TAIKO ring, attaching a tape, and applying a singulation process. The mask can be a soft mask or a hard mask. The etching process can be a wet etching only; a wet etching followed by a dry etching; or a dry etching only.

Abstract: A semiconductor package has a plurality of pillars or portions of a plurality of lead strips, a plurality of semiconductor devices, one or two molding encapsulations and a plurality of electrical interconnections. The semiconductor package excludes a wire. The semiconductor package excludes a clip. A method is applied to fabricate semiconductor packages. The method includes providing a removable carrier; forming a plurality of pillars or a plurality of lead strips; attaching a plurality of semiconductor devices; forming one or two molding encapsulations; forming a plurality of electrical interconnections and removing the removable carrier. The method may further include a singulation process.

Abstract: An interconnected base plate comprises a metal layer, a plurality of metal pads, and a molding encapsulation. The mold compound layer encloses a majority portion of the plurality of metal pads 240. A respective top surface of each of the plurality of metal pads is exposed from a top surface of the molding encapsulation. The respective top surface of said each of the first plurality of metal pads and the top surface of the mold compound layer are co-planar. A power module comprises the interconnected base plate, a plurality of chips, a plurality of bonding wires, a plurality of terminals, a plastic case, and a module-level molding encapsulation. A method, for fabricating an interconnected base plate, comprises the steps of forming a plurality of metal pads; loading a metal layer; forming a molding encapsulation; and applying a singulation process.

Abstract: A semiconductor wafer is singulated to form a plurality of semiconductor packages. The semiconductor wafer has a semiconductor substrate, a metal layer, an adhesive layer, a rigid supporting layer, a passivation layer and a plurality of contact pads. A semiconductor package has a semiconductor substrate, a metal layer, an adhesive layer, a rigid supporting layer, a passivation layer and a plurality of contact pads. A thickness of the rigid supporting layer is larger than a thickness of the semiconductor substrate. A thickness of the metal layer is thinner than the thickness of the semiconductor substrate. An entirety of the rigid supporting layer may be made of a single crystal silicon material or a poly-crystal silicon material. The single crystal silicon material or the poly-crystal silicon material may be fabricated from a reclaimed silicon wafer. An advantage of using a reclaimed silicon wafer is for a cost reduction.

Abstract: A semiconductor package comprises a land grid array substrate, a first VDMOSFET, a second VDMOSFET, and a molding encapsulation. The land grid array substrate comprises a first metal layer, a second metal layer, a third metal layer, a plurality of vias, and a resin. A series of drain pads at a bottom surface of the semiconductor package follow a “drain 1, drain 2, drain 1, and drain 2” pattern. A method for fabricating a semiconductor package. The method comprises the steps of providing a land grid array substrate; mounting a first VDMOSFET and a second VDMOSFET on the land grid array substrate; applying a wire bonding process; forming a molding encapsulation; and applying a singulation process.

Abstract: A semiconductor package comprises a land grid array substrate, a first VDMOSFET, a second VDMOSFET, and a molding encapsulation. The land grid array substrate comprises a first metal layer, a second metal layer, a third metal layer, a plurality of vias, and a resin. A series of drain pads at a bottom surface of the semiconductor package follow a “drain 1, drain 2, drain 1, and drain 2” pattern. A method for fabricating a semiconductor package. The method comprises the steps of providing a land grid array substrate; mounting a first VDMOSFET and a second VDMOSFET on the land grid array substrate; applying a wire bonding process; forming a molding encapsulation; and applying a singulation process.

Abstract: A semiconductor package has a plurality of pillars or portions of a plurality of lead strips, a plurality of semiconductor devices, one or two molding encapsulations and a plurality of electrical interconnections. The semiconductor package excludes a wire. The semiconductor package excludes a clip. A method is applied to fabricate semiconductor packages. The method includes providing a removable carrier; forming a plurality of pillars or a plurality of lead strips; attaching a plurality of semiconductor devices; forming one or two molding encapsulations; forming a plurality of electrical interconnections and removing the removable carrier. The method may further include a singulation process.

Abstract: A semiconductor package has a plurality of pillars or portions of a plurality of lead strips, a plurality of semiconductor devices, one or two molding encapsulations and a plurality of electrical interconnections. The semiconductor package excludes a wire. The semiconductor package excludes a clip. A method is applied to fabricate semiconductor packages. The method includes providing a removable carrier; forming a plurality of pillars or a plurality of lead strips; attaching a plurality of semiconductor devices; forming one or two molding encapsulations; forming a plurality of electrical interconnections and removing the removable carrier. The method may further include a singulation process.

Abstract: A nitride-based Schottky diode includes a nitride-based semiconductor body, a first metal layer forming the anode electrode, a cathode electrode in electrical contact with the nitride-based semiconductor body, and a termination structure including a guard ring and a dielectric field plate. In one embodiment, the cathode electrode is formed on the front side of the nitride-based semiconductor body, in an area away from the anode electrode and the termination structure. In another embodiment, the dielectric field plate includes a first dielectric layer and a recessed second dielectric layer. In another embodiment, the dielectric field plate and the nitride-based epitaxial layer are formed with a slant profile at a side facing the Schottky junction of the Schottky diode. In another embodiment, the dielectric field plate is formed on a top surface of the nitride-based epitaxial layer and recessed from an end of the nitride-based epitaxial layer near the Schottky junction.

Abstract: A method for fabricating an anode-shorted field stop insulated gate bipolar transistor (IGBT) comprises selectively forming first and second semiconductor implant regions of opposite conductivity types. A field stop layer of a second conductivity type can be grown onto or implanted into the substrate. An epitaxial layer can be grown on the substrate or on the field stop layer. One or more insulated gate bipolar transistors (IGBT) component cells are formed within the epitaxial layer.

Abstract: A nitride-based Schottky diode includes a nitride-based semiconductor body, a first metal layer forming the anode electrode, a cathode electrode in electrical contact with the nitride-based semiconductor body, and a termination structure including a guard ring and a dielectric field plate. In one embodiment, the cathode electrode is formed on the front side of the nitride-based semiconductor body, in an area away from the anode electrode and the termination structure. In another embodiment, the dielectric field plate includes a first dielectric layer and a recessed second dielectric layer. In another embodiment, the dielectric field plate and the nitride-based epitaxial layer are formed with a slant profile at a side facing the Schottky junction of the Schottky diode. In another embodiment, the dielectric field plate is formed on a top surface of the nitride-based epitaxial layer and recessed from an end of the nitride-based epitaxial layer near the Schottky junction.

Abstract: A method for forming a nitride-based Schottky diode includes forming a nitride-based epitaxial layer on a front side of a nitride-based semiconductor body; forming a first dielectric layer on the nitride-based epitaxial layer; etching the first dielectric layer and the nitride-based epitaxial layer to the nitride-based semiconductor body to define an opening for an anode electrode of the nitride-based Schottky diode and to form an array of islands of the nitride-based epitaxial layer in the opening, the first dielectric layer having an end that is recessed from an end of the nitride-based epitaxial layer near the opening. In another embodiment, the first dielectric layer and the nitride-based epitaxial layer have a slant profile at a side facing the opening for the anode electrode.

Abstract: A semiconductor wafer is singulated to form a plurality of semiconductor packages. The semiconductor wafer has a semiconductor substrate, a metal layer, an adhesive layer, a rigid supporting layer, a passivation layer and a plurality of contact pads. A semiconductor package has a semiconductor substrate, a metal layer, an adhesive layer, a rigid supporting layer, a passivation layer and a plurality of contact pads. A thickness of the rigid supporting layer is larger than a thickness of the semiconductor substrate. A thickness of the metal layer is thinner than the thickness of the semiconductor substrate. An entirety of the rigid supporting layer may be made of a single crystal silicon material or a poly-crystal silicon material. The single crystal silicon material or the poly-crystal silicon material may be fabricated from a reclaimed silicon wafer. An advantage of using a reclaimed silicon wafer is for a cost reduction.

Abstract: A method for forming a nitride-based Schottky diode includes forming a nitride-based epitaxial layer on a front side of a nitride-based semiconductor body; forming a first dielectric layer on the nitride-based epitaxial layer; etching the first dielectric layer and the nitride-based epitaxial layer to the nitride-based semiconductor body to define an opening for an anode electrode of the nitride-based Schottky diode and to form an array of islands of the nitride-based epitaxial layer in the opening, the first dielectric layer having an end that is recessed from an end of the nitride-based epitaxial layer near the opening. In another embodiment, the first dielectric layer and the nitride-based epitaxial layer have a slant profile at a side facing the opening for the anode electrode.

Abstract: A method for fabricating an anode-shorted field stop insulated gate bipolar transistor (IGBT) comprises selectively forming first and second semiconductor implant regions of opposite conductivity types. A field stop layer of a second conductivity type can be grown onto or implanted into the substrate. An epitaxial layer can be grown on the substrate or on the field stop layer. One or more insulated gate bipolar transistors (IGBT) component cells are formed within the epitaxial layer.

Abstract: A termination structure for a nitride-based Schottky diode includes a guard ring formed by an epitaxially grown P-type nitride-based compound semiconductor layer and dielectric field plates formed on the guard ring. The termination structure is formed at the edge of the anode electrode of the Schottky diode and has the effect of reducing electric field crowding at the anode electrode edge, especially when the Schottky diode is reverse biased. In one embodiment, the P-type epitaxial layer includes a step recess to further enhance the field spreading effect of the termination structure.

Abstract: A method for fabricating an anode-shorted field stop insulated gate bipolar transistor (IGBT) comprises selectively forming first and second semiconductor implant regions of opposite conductivity types. A field stop layer of a second conductivity type can be grown onto or implanted into the substrate. An epitaxial layer can be grown on the substrate or on the field stop layer. One or more insulated gate bipolar transistors (IGBT) component cells are formed within the epitaxial layer.

Abstract: The invention relates to a semiconductor package of a flip chip and a method for making the semiconductor package. The semiconductor chip comprises a metal-oxide-semiconductor field effect transistor. On a die paddle including a first base, a second base and a third base, half-etching or punching is performed on the top surfaces of the first base and the second base to obtain plurality of grooves that divide the top surface of the first base into a plurality of areas comprising multiple first connecting areas, and divide the top surface of the second base into a plurality of areas comprising at least a second connecting area. The semiconductor chip is connected to the die paddle at the first connecting areas and the second connecting area.