Abstract: An apparatus for relaying microwave field intensity in a microwave cavity. In some embodiments, the apparatus comprises a microwave transparent substrate with at least one Radio Frequency (RF) detector that is capable of detecting a microwave field and generating a signal associated with a field intensity of the detected microwave field and a transmitter that receives the signal associated with the detected microwave field from the RF detector and transmits or stores information about the detected microwave field intensity. In some embodiments, the apparatus relays the microwave intensity via a wired, wireless, or optical transmitter located in proximity of the RF detector.

Abstract: Methods and apparatus for uniform thermal distribution across semiconductor batches are provided herein. According to one embodiment, a microwave oven for semiconductor processing, comprising a thermal housing having a cavity and a plurality of input ports, a power source configured to provide a microwave signal to the cavity of the thermal housing via the plurality of input ports, a phase shifter disposed between the power source and the input ports, wherein the phase shifter is configured to vary a phase difference between two or more signals provided to it; and a controller communicatively coupled to the phase shifter and configured to control the phase difference between the two or more signals.

Abstract: Apparatus for extending process kit components lifetimes are disclosed. In some embodiments, a process kit includes: a first ring having an inner wall defining an inner diameter, an outer wall defining an outer diameter, an upper surface between the inner wall and the outer wall, and an opposing lower surface between the inner wall and the outer wall, wherein a first portion of the upper surface proximate the inner wall is concave, and wherein a second portion of the upper surface extends horizontally away from the first portion; and a second ring having an upper surface and an opposing lower surface, wherein a first portion of the lower surface is configured to rest upon the second portion of the first ring, wherein a second portion of the lower surface is convex and extends into but does not touch the concave first portion of the upper surface of the first ring.

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Abstract: In some embodiments, an apparatus for processing substrates includes: a substrate support within a processing chamber; a light source directly coupled to a light isolator and configured to deliver incident light to and through a first surface of the substrate when disposed on the substrate support; an optical fiber having a first end spaced apart a first distance from the first surface and a second end directly coupled to the light source via a coupling element; a photodetector directly coupled to the second end of the optical fiber via the coupling element and configured to receive a first reflected light beam reflected off the first surface and a second reflected light beam reflected off an inner boundary of a second surface of the substrate, opposite the first surface; and a signal processor to determine a temperature of the substrate based on the first and second reflected light beams.

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Abstract: Embodiments of the present disclosure include methods and apparatus for controlling titanium-tungsten (TiW) target nodule formation. In some embodiments, a target includes: a source material comprising predominantly titanium (Ti) and tungsten (W), formed from a mixture of titanium powder and tungsten powder, wherein a grain size of a predominant quantity of the titanium powder is less than or equal to a grain size of a predominant quantity of the tungsten powder.

Abstract: Methods of curing polyimide to tune the coefficient of thermal expansion are provided herein. In some embodiments, a method of curing a polymer layer on a substrate, includes: (a) applying a variable frequency microwave energy to the substrate to heat the polymer layer and the substrate to a first temperature; and (b) adjusting the variable frequency microwave energy to increase a temperature of the polymer layer and the substrate to a second temperature to cure the polymer layer.

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Abstract: Embodiments of the present disclosure include methods and apparatus for controlling titanium-tungsten (TiW) target nodule formation. In some embodiments, a target includes: a source material comprising predominantly titanium (Ti) and tungsten (W), formed from a mixture of titanium powder and tungsten powder, wherein a grain size of a predominant quantity of the titanium powder is less than or equal to a grain size of a predominant quantity of the tungsten powder.

Abstract: Apparatus for extending process kit components lifetimes are disclosed. In some embodiments, a process kit includes: a first ring having an inner wall defining an inner diameter, an outer wall defining an outer diameter, an upper surface between the inner wall and the outer wall, and an opposing lower surface between the inner wall and the outer wall, wherein a first portion of the upper surface proximate the inner wall is concave, and wherein a second portion of the upper surface extends horizontally away from the first portion; and a second ring having an upper surface and an opposing lower surface, wherein a first portion of the lower surface is configured to rest upon the second portion of the first ring, wherein a second portion of the lower surface is convex and extends into but does not touch the concave first portion of the upper surface of the first ring.

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. A method for degassing a substrate can include positioning a substrate comprising a polymer or an epoxy within a processing chamber maintained between a degas temperature and a glass transition temperature, exposing the substrate to variable frequency microwave radiation, exposing the substrate to a plasma comprising an inert gas, removing oxygen containing compounds from the chamber, raising the pressure of inert gas in the chamber, and maintaining the pressure of inert gas while cooling the substrate to a temperature lower than the degas temperature.

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. The methods described herein use variable frequency microwave radiation to increased quality and speed of the degas process without damaging the various components.

Abstract: Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating mechanism and a variable frequency microwave source. A method for degassing a substrate can include positioning a substrate comprising a polymer or an epoxy within a processing chamber maintained between a degas temperature and a glass transition temperature, exposing the substrate to variable frequency microwave radiation, exposing the substrate to a plasma comprising an inert gas, removing oxygen containing compounds from the chamber, raising the pressure of inert gas in the chamber, and maintaining the pressure of inert gas while cooling the substrate to a temperature lower than the degas temperature.