Patents by Inventor Yueh Sheng Ow
Yueh Sheng Ow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240087913Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.Type: ApplicationFiled: November 21, 2023Publication date: March 14, 2024Applicant: Applied Materials, Inc.Inventors: Kang Zhang, Junqi Wei, Yueh Sheng Ow, Kelvin Boh, Yuichi Wada, Ananthkrishna Jupudi, Sarath Babu
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Patent number: 11913107Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate can includes selectively etching from a substrate disposed in the PVD chamber an exposed first layer of material, covering an underlying second layer of material, and adjacent to an exposed third layer of material, using both process gas ions and metal ions formed from a target of the PVD chamber, in an amount sufficient to expose the second layer of material while simultaneously depositing a layer of metal onto the third layer of material; and subsequently depositing metal from the target onto the second layer of material.Type: GrantFiled: November 8, 2019Date of Patent: February 27, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Yueh Sheng Ow, Yuichi Wada, Junqi Wei, Kang Zhang, Kelvin Boh
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Patent number: 11881385Abstract: Apparatus and methods use a unique process kit to protect a processing volume of a process chamber. The process kit includes a shield with a frame configured to be insertable into a shield and a foil liner composed of a metallic material that is attachable to the frame at specific points. The specific attachment points are spaced apart to produce an amount of flexibility based on a malleability of the metallic material. The amount of flexibility ranges from approximately 2.5 to approximately 4.5.Type: GrantFiled: April 24, 2020Date of Patent: January 23, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Yueh Sheng Ow, Yuichi Wada, Junqi Wei, Kang Zhang, Ananthkrishna Jupudi, Sarath Babu, Kok Seong Teo, Kok Wei Tan
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Patent number: 11862480Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.Type: GrantFiled: October 11, 2021Date of Patent: January 2, 2024Assignee: Applied Materials, Inc.Inventors: Kang Zhang, Junqi Wei, Yueh Sheng Ow, Kelvin Boh, Yuichi Wada, Ananthkrishna Jupudi, Sarath Babu
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Patent number: 11670513Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.Type: GrantFiled: April 11, 2021Date of Patent: June 6, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Yueh Sheng Ow, Junqi Wei, Wen Long Favier Shoo, Ananthkrishna Jupudi, Takashi Shimizu, Kelvin Boh, Tuck Foong Koh
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Patent number: 11629409Abstract: Methods and apparatus for a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes a chamber body having sidewalls defining an interior volume having a polygon shape; a selectively sealable elongated opening disposed in an upper portion of the chamber body for transferring one or more substrates into or out of the chamber body; a funnel disposed at a first end of the chamber body, wherein the funnel increases in size along a direction from an outer surface of the chamber body to the interior volume; and a pump port disposed at a second end of the chamber body opposite the funnel.Type: GrantFiled: May 28, 2019Date of Patent: April 18, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Ribhu Gautam, Ananthkrishna Jupudi, Tuck Foong Koh, Preetham P. Rao, Vinodh Ramachandran, Yueh Sheng Ow, Yuichi Wada, Cheng-Hsiung Tsai, Kai Liang Liew
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Patent number: 11610807Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.Type: GrantFiled: April 11, 2021Date of Patent: March 21, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Felix Deng, Yueh Sheng Ow, Tuck Foong Koh, Nuno Yen-Chu Chen, Yuichi Wada, Sree Rangasai V. Kesapragada, Clinton Goh
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Patent number: 11569122Abstract: Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.Type: GrantFiled: March 30, 2021Date of Patent: January 31, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Felix Deng, Yueh Sheng Ow, Tuck Foong Koh, Nuno Yen-Chu Chen, Yuichi Wada, Sree Rangasai V. Kesapragada, Clinton Goh
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Patent number: 11375584Abstract: Methods and apparatus for processing a substrate are provided herein. The apparatus can include, for example, a microwave energy source configured to provide microwave energy from beneath a substrate support provided in an inner volume of the process chamber; a first microwave reflector positioned on the substrate support above a substrate supporting position of the substrate support; and a second microwave reflector positioned on the substrate support beneath the substrate supporting position, wherein the first microwave reflector and the second microwave reflector are positioned and configured such that microwave energy passes through the second microwave reflector and some of the microwave energy is reflected from a bottom surface of the first microwave reflector back to the substrate during operation.Type: GrantFiled: August 20, 2019Date of Patent: June 28, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Tuck Foong Koh, Yueh Sheng Ow, Nuno Yen-Chu Chen, Ananthkrishna Jupudi, Preetham P. Rao
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Patent number: 11328929Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.Type: GrantFiled: April 30, 2019Date of Patent: May 10, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Yueh Sheng Ow, Junqi Wei, Wen Long Favier Shoo, Ananthkrishna Jupudi, Takashi Shimizu, Kelvin Boh, Tuck Foong Koh
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Patent number: 11289357Abstract: Methods and apparatus for increasing voltage breakdown levels of an electrostatic chuck in a process chamber. A soft anodization layer with a thickness of greater than zero and less than approximately 10 microns is formed on an aluminum base of the electrostatic chuck. The soft anodization layer remains thermally elastic in a temperature range of approximately ?50 degrees Celsius to approximately 100 degrees Celsius. An alumina spray coating is then applied on the soft anodization layer. The soft anodization layer provides thermal stress relief between the aluminum base and the alumina spray coating to reduce/eliminate cracking caused by the thermal expansion rate differences between the aluminum base and the alumina spray coating.Type: GrantFiled: August 26, 2019Date of Patent: March 29, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Yuichi Wada, Yueh Sheng Ow, Ananthkrishna Jupudi, Clinton Goh, Kai Liang Liew, Sarath Babu
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Publication number: 20220028702Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.Type: ApplicationFiled: October 11, 2021Publication date: January 27, 2022Applicant: Applied Materials, Inc.Inventors: Zhang Kang, Junqi Wei, Yueh Sheng Ow, Kelvin Boh, Yuichi Wada, Ananthkrishna Jupudi, Sarath Babu
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Patent number: 11171017Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.Type: GrantFiled: September 3, 2020Date of Patent: November 9, 2021Assignee: Applied Materials, Inc.Inventors: Zhang Kang, Junqi Wei, Yueh Sheng Ow, Kelvin Boh, Yuichi Wada, Ananthkrishna Jupudi, Sarath Babu
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Publication number: 20210335581Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber, includes: a top plate having a central recess disposed in an upper surface thereof; a channel extending from an outer portion of the top plate to the central recess; a plurality of holes disposed through the top plate from a bottom surface of the recess to a lower surface of the top plate; a cover plate configured to be coupled to the top plate and to form a seal along a periphery of the central recess such that the covered recess forms a plenum within the top plate; and a tubular body extending down from the lower surface of the top plate and surrounding the plurality of holes, the tubular body further configured to surround a substrate support.Type: ApplicationFiled: April 22, 2020Publication date: October 28, 2021Inventors: Sarath BABU, Ananthkrishna JUPUDI, Yueh Sheng OW, Junqi WEI, Kelvin Tai Ming BOH, Kang ZHANG, Yuichi WADA
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Publication number: 20210335582Abstract: Apparatus and methods use a unique process kit to protect a processing volume of a process chamber. The process kit includes a shield with a frame configured to be insertable into a shield and a foil liner composed of a metallic material that is attachable to the frame at specific points. The specific attachment points are spaced apart to produce an amount of flexibility based on a malleability of the metallic material. The amount of flexibility ranges from approximately 2.5 to approximately 4.5.Type: ApplicationFiled: April 24, 2020Publication date: October 28, 2021Inventors: Yueh Sheng OW, Yuichi WADA, Junqi WEI, Kang ZHANG, Ananthkrishna JUPUDI, Sarath BABU, Kok Seong TEO, Kok Wei TAN
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Patent number: 11114288Abstract: Methods and apparatus for physical vapor deposition are provided. The apparatus, for example, includes A PVD apparatus that includes a chamber including a chamber wall; a magnetron including a plurality of magnets configured to produce a magnetic field within the chamber; a pedestal configured to support a substrate; and a target assembly comprising a target made of gold and supported on the chamber wall via a backing plate coupled to a back surface of the target so that a front surface of the target faces the substrate, wherein a distance between a back surface formed in a recess of the backing plate and a bottom surface of the plurality of magnets is about 3.95 mm to about 4.45 mm, and wherein a distance between the front surface of the target and a front surface of the substrate is about 60.25 mm to about 60.75 mm.Type: GrantFiled: February 8, 2019Date of Patent: September 7, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Kirankumar Neelasandra Savandaiah, Junqi Wei, Yueh Sheng Ow, Wen Long Favier Shoo
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Publication number: 20210233773Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.Type: ApplicationFiled: April 11, 2021Publication date: July 29, 2021Inventors: YUEH SHENG OW, JUNQI WEI, WEN LONG FAVIER SHOO, ANANTHKRISHNA JUPUDI, TAKASHI SHIMIZU, KELVIN BOH, TUCK FOONG KOH
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Patent number: D931241Type: GrantFiled: August 28, 2019Date of Patent: September 21, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Sarath Babu, Ananthkrishna Jupudi, Yueh Sheng Ow, Junqi Wei, Kelvin Boh, Yuichi Wada, Kang Zhang
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Patent number: D971167Type: GrantFiled: April 10, 2021Date of Patent: November 29, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Sarath Babu, Ananthkrishna Jupudi, Yueh Sheng Ow, Junqi Wei, Kelvin Boh, Yuichi Wada, Kang Zhang
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Patent number: D973609Type: GrantFiled: April 22, 2020Date of Patent: December 27, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Sarath Babu, Ananthkrishna Jupudi, Yueh Sheng Ow, Junqi Wei, Kelvin Tai Ming Boh, Kang Zhang, Yuichi Wada