Abstract: A photoresist and a method of manufacturing photoresist patterns are disclosed. The photoresist includes a plurality of photosensitive units, and each photosensitive unit has magnetism.

Abstract: The present disclosure provides a flexible display device and a manufacturing method. The manufacturing method includes: forming a layer of flexible display devices on a support plate; etching the layer of flexible display devices on the support plate to expose a portion of the support plate at a cutting region, the cutting region being a predetermined region between two adjacent flexible display devices; and removing the layer of flexible display devices from the support plate after the etching process so as to obtain a plurality of flexible display devices separated from each other.

Abstract: Disclosed is a substrate for a display panel, a manufacturing method thereof, and a display panel and encapsulation method. The substrate includes a carrier substrate and at least one auxiliary encapsulation component disposed on the carrier substrate. A protrusion is formed at a side of the auxiliary encapsulation component away from the carrier substrate and protrudes in a direction parallel to the surface of the carrier substrate.

Abstract: A flexible display panel, a manufacturing method thereof and a display device are provided. The flexible display panel comprises: a flexible substrate, a first metal layer formed on the substrate, an insulation layer overlying the first metal layer, and a second metal layer disposed on the insulation layer, wherein a plurality of via holes are provided in the insulation layer, the inner wall of each via hole is covered by a stress buffer layer and the second metal layer is formed on the stress buffer layer and connected to the first metal layer through the via holes.

Abstract: The present disclosure provides a display substrate, a method for manufacturing the same, and a display device. The display substrate comprises a display region, and a peripheral circuit located on a periphery of the display region and provided with a signal line. The display substrate further comprises at least one conductive pattern located on a thin film encapsulation layer of the display substrate and connected in substantially parallel to the signal line.

Abstract: A display element, a method for fabricating the same, and a display device are provided. The display element includes: a blocking layer; a fingerprint sensor on one side of the blocking layer; a light-shielding layer on the side of the blocking layer away from the fingerprint sensor, wherein the light-shielding layer includes a first via-hole; a middle layer on the the light-shielding layer; a pixel definition layer on the middle layer, wherein the pixel definition layer includes a second via-hole in which a cathode layer and a light-emitting layer are arranged; an antireflection coating on the pixel definition layer; and an anode layer on the light-emitting layer.

Abstract: A dry etching method includes performing at least two etching steps, and further includes injecting protective gas into an etch chamber for processing between any two successive etching steps, wherein the protective gas generates plasma to neutralize electrons accumulated on a side wall of an etching trench. According to the present disclosure, hydrogen plasma is added in an etching process to remove the electrons accumulated on the side wall of the etching trench so as to reduce the microetching effect in multiple etching. In this way, process stability and reliability of a display substrate are improved.

Abstract: Embodiment of the present disclosure provides a motherboard of flexible display panel, a cutting method thereof, a flexible display panel and a display device. The motherboard of flexible display panel includes: a plurality of display units; a space region, disposed to at least separate adjacent ones of the display unis; and a barrier strip, disposed in the space region and configured to stop a crack from extending towards the display units across the barrier strip.

Abstract: A wiring structure, a display substrate and a display device. The wiring structure comprises a plurality of hollow patterns, and edges of the wiring structure along a length direction of the wiring structure extend in a straight line. The wiring structure can release stress through the hollow patterns so as to avoid breakage of the wiring structure, the display substrate, and the display device.

Abstract: A substrate and a manufacturing method thereof and a display device are provided. The substrate includes: a base including a bendable region; an interlayer on the base and in the bendable region; and a signal line at a side, facing away from the base, of the interlayer. In the bendable region, an orthographic projection of the signal line on the base is within an orthographic projection of the interlayer on the base; and in the bendable region, the interlayer is provided with a groove on at least one side of a portion, corresponding to the signal line, of the interlayer.

Abstract: Embodiment of the present disclosure provides a motherboard of flexible display panel, a cutting method thereof, a flexible display panel and a display device. The motherboard of flexible display panel includes: a plurality of display units; a space region, disposed to at least separate adjacent ones of the display unis; and a barrier strip, disposed in the space region and configured to stop a crack from extending towards the display units across the barrier strip.

Abstract: A semiconductor device, an array substrate, and a display device, and their fabrication methods are provided. An exemplary semiconductor device includes a first electrode, an insulating layer, and a second electrode, over a substrate. A conductive layer is on the insulating layer. A semiconductor layer is on the first electrode, on a first sidewall of the insulating layer, on the conductive layer, on the second sidewall of the insulating layer, and on the second electrode. A first gate electrode is over a portion of the semiconductor layer that is on the first sidewall of the insulating layer. A second gate electrode is over a portion of the semiconductor layer that is on the second sidewall of the insulating layer.

Abstract: The present disclosure provides a substrate for a display panel, manufacturing method thereof, a display panel and encapsulation method. The substrate includes a carrier substrate and at least one auxiliary encapsulation component disposed on the carrier substrate. A protrusion is formed at aside of the auxiliary encapsulation component away from the carrier substrate and protrudes in the direction parallel to the surface of the carrier substrate. The substrate for a display panel, manufacturing method thereof, the display panel and the encapsulation method provided by the present disclosure improve the adhesion of the encapsulation, thus prolonging the lifetime of product.

Abstract: A dry etching method includes performing at least two etching steps, and further includes injecting protective gas into an etch chamber for processing between any two successive etching steps, wherein the protective gas generates plasma to neutralize electrons accumulated on a side wall of an etching trench. According to the present disclosure, hydrogen plasma is added in an etching process to remove the electrons accumulated on the side wall of the etching trench so as to reduce the microetching effect in multiple etching. In this way, process stability and reliability of a display substrate are improved.

Abstract: A semiconductor device, an array substrate, and a display device, and their fabrication methods are provided. An exemplary semiconductor device includes a first electrode, an insulating layer, and a second electrode, over a substrate. A conductive layer is on the insulating layer. A semiconductor layer is on the first electrode, on a first sidewall of the insulating layer, on the conductive layer, on the second sidewall of the insulating layer, and on the second electrode. A first gate electrode is over a portion of the semiconductor layer that is on the first sidewall of the insulating layer. A second gate electrode is over a portion of the semiconductor layer that is on the second sidewall of the insulating layer.

Abstract: The present disclosure relates to the field of TFT manufacturing process, and provides an LTPS TFT array substrate, its manufacturing method and a display device. The LTPS TFT array substrate includes contact holes through which a source electrode and a drain electrode of the array substrate are connected to an active layer, respectively, wherein a conductive pattern connected to the active layer is provided at a base portion of the contact hole. According to the present disclosure, it is able to form an excellent ohmic contact between the source/drain electrodes and the active layer after the contact holes have been etched, thereby to ensure the display quality of the display device.

Abstract: The present application discloses a method of fabricating a display apparatus, comprising providing a carrier substrate comprising a base substrate and an adhesive layer over the base substrate, wherein the base substrate comprises a plurality of fluid passages between the base substrate and the adhesive layer, and a plurality of fluid inlets connected with the plurality of fluid passages; forming a product substrate on a side of the adhesive layer distal to the base substrate; dispensing a detaching agent through the plurality of fluid inlets to the plurality of fluid passages, and contacting the detaching agent with the adhesive layer through the plurality of fluid passages; and detaching the product substrate from the carrier substrate.

Abstract: Embodiments of the present invention provide a thin film transistor and a manufacturing method thereof, an array substrate including the thin film transistor, and a manufacturing method of the array substrate. The thin film transistor comprises an active layer, a gate insulation layer, a gate, an interlayer insulation layer, a source and a drain formed on a base substrate, the interlayer insulation layer and the gate insulation layer are provided therein with through holes corresponding to the source and the drain; the active layer comprises a source ohmic contact region connected with the source, a drain ohmic contact region connected with the drain, a channel region serving as a channel located below the gate, and a lightly doped region between the drain ohmic contact region and the channel region.

Abstract: A dry etching method includes performing at least two etching steps, and further includes injecting protective gas into an etch chamber for processing between any two successive etching steps, wherein the protective gas generates plasma to neutralize electrons accumulated on a side wall of an etching trench. According to the present disclosure, hydrogen plasma is added in an etching process to remove the electrons accumulated on the side wall of the etching trench so as to reduce the microetching effect in multiple etching. In this way, process stability and reliability of a display substrate are improved.

Abstract: A manufacturing method of an array substrate comprises: forming a source and a drain of a thin film transistor on a base; forming a first insulation layer; forming an active layer of the thin film transistor; forming a second insulation layer; forming a first via hole and a second via hole in the first insulation layer and the second insulation layer above the source and the drain, by etching, and forming a third via hole and a fourth via hole in the second insulation layer above the active layer, by etching; forming a first connection line connecting the source with the active layer through the first via hole and the third via hole, a second connection line connecting the drain with the active layer and the pixel electrode through the second via hole and the fourth via hole and a pixel electrode.