Patents by Inventor Yufei HU
Yufei HU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240139900Abstract: A chemical mechanical polishing apparatus has a platen to support a polishing pad, a carrier head comprising a rigid housing and configured to hold a surface of a substrate against the polishing pad, a motor to generate relative motion between the platen and the carrier head so as to polish the substrate, an in-situ carrier head monitoring system including a sensor positioned to interact with the housing and to detect vibrational motion of the housing and generate signals based on the detected vibrational motion, and a controller. The controller is configured to generate a value for a carrier head status parameter based on received signals from the in-situ carrier head monitoring system, and change a polishing parameter or generate an alert based on the carrier head status parameter.Type: ApplicationFiled: January 24, 2023Publication date: May 2, 2024Inventors: Jeonghoon Oh, Jianshe Tang, Steven M. Zuniga, Brian J. Brown, Andrew J. Nagengast, Derek R. Witty, Rushabhkumar Desai, Shih-Haur Shen, Haosheng Wu, Yufei Hu
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Patent number: 11967525Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.Type: GrantFiled: August 1, 2022Date of Patent: April 23, 2024Assignee: Applied Materials, Inc.Inventors: Yi Xu, Yufei Hu, Yu Lei, Kazuya Daito, Da He, Jiajie Cen
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Patent number: 11955381Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.Type: GrantFiled: June 22, 2020Date of Patent: April 9, 2024Assignee: Applied Materials, Inc.Inventors: Yi Xu, Yufei Hu, Kazuya Daito, Geraldine M. Vasquez, Da He, Jallepally Ravi, Yu Lei, Dien-Yeh Wu
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Patent number: 11749543Abstract: A method includes receiving a plurality of sets of sensor data associated with a processing chamber of a substrate processing system. Each of the plurality of sets of sensor data comprises a corresponding sensor value of the processing chamber mapped to a corresponding spacing value of the processing chamber. The method further includes providing the plurality of sets of sensor data as input to a trained machine learning model. The method further includes obtaining, from the trained machine learning model, one or more outputs indicative of a health of the processing chamber. The method further includes causing, based on the one or more outputs, performance of one or more corrective actions associated with the processing chamber.Type: GrantFiled: July 6, 2020Date of Patent: September 5, 2023Assignee: Applied Materials, Inc.Inventors: Xuesong Lu, Yu Lei, Anup Phatak, Hyman W. H. Lam, Chong Jiang, Malcolm Emil Delaney, Yufei Hu
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Patent number: 11721542Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A substrate comprising a surface structure with a metal bottom, dielectric sidewalls, and a field of dielectric is exposed to a dual plasma treatment in a processing chamber to remove chemical residual and/or impurities from the metal bottom, the dielectric sidewalls, and/or the field of the dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The dual plasma treatment comprises a direct plasma and a remote plasma.Type: GrantFiled: November 23, 2020Date of Patent: August 8, 2023Assignee: Applied Materials, Inc.Inventors: Yi Xu, Yufei Hu, Kazuya Daito, Yu Lei, Dien-Yeh Wu, Jallepally Ravi
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Patent number: 11562909Abstract: Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CHxFy gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH3—NF3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.Type: GrantFiled: May 22, 2020Date of Patent: January 24, 2023Assignee: Applied Materials, Inc.Inventors: Yu Lei, Xuesong Lu, Tae Hong Ha, Xianmin Tang, Andrew Nguyen, Tza-Jing Gung, Philip A. Kraus, Chung Nang Liu, Hui Sun, Yufei Hu
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Patent number: 11515200Abstract: Embodiments of the disclosure provide methods which reduce or eliminate lateral growth of a selective tungsten layer. Further embodiments provide an integrated clean and deposition method which improves the selectivity of selectively deposited tungsten on trench structures. Additional embodiments provide methods for forming a more uniform and selective bottom-up gap fill for trench structures with improved film properties.Type: GrantFiled: December 3, 2020Date of Patent: November 29, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Yi Xu, Yufei Hu, He Ren, Yu Lei, Shi You, Kazuya Daito
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Publication number: 20220367264Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.Type: ApplicationFiled: August 1, 2022Publication date: November 17, 2022Applicant: Applied Materials, Inc.Inventors: Yi Xu, Yufei Hu, Yu Lei, Kazuya Daito, Da He, Jiajie Cen
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Publication number: 20220336223Abstract: Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CHxFy gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH3—NF3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.Type: ApplicationFiled: June 22, 2022Publication date: October 20, 2022Applicant: Applied Materials, Inc.Inventors: Yu Lei, Xuesong Lu, Tae Hong Ha, Xianmin Tang, Andrew Nguyen, Tza-Jing Gung, Philip A. Kraus, Chung Nang Liu, Hui Sun, Yufei Hu
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Publication number: 20220319837Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A substrate comprising a surface structure with a metal bottom, dielectric sidewalls, and a field of dielectric is exposed to a dual plasma treatment in a processing chamber to remove chemical residual and/or impurities from the metal bottom, the dielectric sidewalls, and/or the field of the dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The dual plasma treatment comprises a direct plasma and a remote plasma.Type: ApplicationFiled: June 20, 2022Publication date: October 6, 2022Applicant: Applied Materials, Inc.Inventors: Yi Xu, Yufei Hu, Kazuya Daito, Yu Lei, Dien-Yeh Wu, Jallepally Ravi
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Patent number: 11404313Abstract: Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.Type: GrantFiled: June 30, 2020Date of Patent: August 2, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Yi Xu, Yufei Hu, Yu Lei, Kazuya Daito, Da He, Jiajie Cen
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Publication number: 20220181201Abstract: Embodiments of the disclosure provide methods which reduce or eliminate lateral growth of a selective tungsten layer. Further embodiments provide an integrated clean and deposition method which improves the selectivity of selectively deposited tungsten on trench structures. Additional embodiments provide methods for forming a more uniform and selective bottom-up gap fill for trench structures with improved film properties.Type: ApplicationFiled: December 3, 2020Publication date: June 9, 2022Applicant: Applied Materials, Inc.Inventors: Yi XU, Yufei HU, He REN, Yu LEI, Shi YOU, Kazuya DAITO
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Publication number: 20220064784Abstract: Methods for selective deposition are described herein. Further, methods for improving selectivity comprising an ammonia plasma pre-clean process are also described. In some embodiments, a silyl amine is used to selectively form a surfactant layer on a dielectric surface. A ruthenium film may then be selectively deposited on a conductive surface. In some embodiments, the ammonia plasma removes oxide contaminations from conductive surfaces without adversely affecting the dielectric surface.Type: ApplicationFiled: September 3, 2020Publication date: March 3, 2022Applicant: Applied Materials, Inc.Inventors: Wenjing Xu, Gang Shen, Yufei Hu, Feng Chen, Tae Hong Ha
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Patent number: 11256368Abstract: A touch compensation method includes: for at least one line, estimating coordinates of a point to be compensated at a current moment according to coordinates of n touch recognition points at n previous moments, and n being an integer greater than or equal to 2; calculating compensation data of a touch model corresponding to the point to be compensated according to first touch data of a touch model corresponding to a touch recognition point of a previous 1st moment T1; obtaining all touch data of a touch screen at the current moment, and obtaining second touch data at the current moment at a place where the touch model corresponding to the point to be compensated is located from the all touch data according to the coordinates of the point to be compensated; and compensating the second touch data according to the compensation data.Type: GrantFiled: November 26, 2019Date of Patent: February 22, 2022Assignees: HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Yufei Hu, Yifei Zhan, Youshan Hou, Feng Yang, Cheng Chen
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Publication number: 20220005713Abstract: A method includes receiving a plurality of sets of sensor data associated with a processing chamber of a substrate processing system. Each of the plurality of sets of sensor data comprises a corresponding sensor value of the processing chamber mapped to a corresponding spacing value of the processing chamber. The method further includes providing the plurality of sets of sensor data as input to a trained machine learning model. The method further includes obtaining, from the trained machine learning model, one or more outputs indicative of a health of the processing chamber. The method further includes causing, based on the one or more outputs, performance of one or more corrective actions associated with the processing chamber.Type: ApplicationFiled: July 6, 2020Publication date: January 6, 2022Inventors: Xuesong Lu, Yu Lei, Anup Phatak, Hyman Lam, Chong Jiang, Malcolm Emil Delaney, Yufei Hu
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Publication number: 20210398850Abstract: Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A temperature of a pedestal comprising a cooling feature on which a substrate is located is set to less than or equal to 100° C. The substrate is exposed to a plasma treatment to remove chemical residual and/or impurities from features of the substrate including a metal bottom, dielectric sidewalls, and/or a field of dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The plasma treatment may be an oxygen plasma, for example, a direct oxygen plasma. Processing tools and computer readable media for practicing the method are also described.Type: ApplicationFiled: June 22, 2020Publication date: December 23, 2021Applicant: Applied Materials, Inc.Inventors: Yi Xu, Yufei Hu, Kazuya Daito, Geraldine M. Vasquez, Da He, Jallepally Ravi, Yu Lei, Dien-Yeh Wu
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Publication number: 20210366722Abstract: Described is a process to clean up junction interfaces for fabricating semiconductor devices involving forming low-resistance electrical connections between vertically separated regions. An etch can be performed to remove silicon oxide on silicon surface at the bottom of a recessed feature. Described are methods and apparatus for etching up the bottom oxide of a hole or trench while minimizing the effects to the underlying epitaxial layer and to the dielectric layers on the field and the corners of metal gate structures. The method for etching features involves a reaction chamber equipped with a combination of capacitively coupled plasma and inductive coupled plasma. CHxFy gases and plasma are used to form protection layer, which enables the selectively etching of bottom silicon dioxide by NH3—NF3 plasma. Ideally, silicon oxide on EPI is removed to ensure low-resistance electric contact while the epitaxial layer and field/corner dielectric layers are—etched only minimally or not at all.Type: ApplicationFiled: May 22, 2020Publication date: November 25, 2021Applicant: Applied Materials, Inc.Inventors: Yu Lei, Xuesong Lu, Tae Hong Ha, Xianmin Tang, Andrew Nguyen, Tza-Jing Gung, Philip A. Kraus, Chung Nang Liu, Hui Sun, Yufei Hu
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Patent number: 11171046Abstract: Methods and apparatus for forming an interconnect structure, the method including selectively depositing two or more capping layers atop a top surface of a via within a low-k dielectric layer, wherein the two or more capping layers include a first layer of ruthenium and a second layer of cobalt.Type: GrantFiled: April 1, 2020Date of Patent: November 9, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Feng Chen, Yufei Hu, Wenjing Xu, Gang Shen, Zhiyuan Wu, Tae Hong Ha
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Publication number: 20210326025Abstract: A touch compensation method includes: for at least one line, estimating coordinates of a point to be compensated at a current moment according to coordinates of n touch recognition points at n previous moments, and n being an integer greater than or equal to 2; calculating compensation data of a touch model corresponding to the point to be compensated according to first touch data of a touch model corresponding to a touch recognition point of a previous 1st moment T1; obtaining all touch data of a touch screen at the current moment, and obtaining second touch data at the current moment at a place where the touch model corresponding to the point to be compensated is located from the all touch data according to the coordinates of the point to be compensated; and compensating the second touch data according to the compensation data.Type: ApplicationFiled: November 26, 2019Publication date: October 21, 2021Applicants: HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Yufei HU, Yifei ZHAN, Youshan HOU, Feng YANG, Cheng CHEN
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Patent number: 11112908Abstract: The present disclosure provides a touch data processing method, a device and a storage medium.Type: GrantFiled: June 19, 2020Date of Patent: September 7, 2021Assignees: HEFEI BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., BOE TECHNOLOGY GROUP CO., LTD.Inventors: Cheng Chen, Yufei Hu, Yifei Zhan, Feng Yang, Youshan Hou