Abstract: The present invention provides a negative type colored photosensitive resin composition that serves to produce a cured film having a forward tapered shape. This negative type colored photosensitive resin composition includes an alkali-soluble resin (A), a photo initiator (B), a photo polymerizable compound (C), and a coloring agent (D), the alkali-soluble resin (A) containing a polyimide precursor, polybenzoxazole precursor, and/or a copolymer thereof (A-1), each resin (A-1) having a trifluoromethyl group in the backbone chain.

Abstract: To provide an alkaline developable negative-type photosensitive resin composition from which a cured film that has a high-resolution and low-taper pattern shape and that are excellent in heat resistance and light blocking property can be obtained. A negative-type photosensitive resin composition is characterized by containing an (A1) first resin, a (A2) second resin, a (C) photopolymerization initiator, and a (D) coloring agent, wherein the (A1) first resin is an (A1-1) polyimide and/or an (A1-2) polybenzo-oxazole, and wherein the (A2) second resin is one or more species selected from a (A2-1) polyimide precursor, a (A2-2) polybenzo-oxazole precursor, a (A2-3) polysiloxane, a (A2-4) cardo based resin, and an (A2-5) acrylic resin, and wherein a content ratio of the (A1) first resin in a total of 100 mass % of the (A1) first resin and the (A2) second resin is within the range of 25 to 90 mass %.

Abstract: Provided is a resin composition including: (A1) an alkali-soluble resin having a specific structural unit; (A2) at least one resin selected from the group consisting of polyimides, polybenzoxazoles, polyamideimides, precursors thereof, and copolymers thereof, the resin having a substituent that reacts with a reactive group of the alkali-soluble resin; and (B) a photosensitizer, in which the amount of the resin (A2) is 310 to 2,000 parts by weight with respect to 100 parts by weight of the resin (A1).

Abstract: To provide a photosensitive resin composition which is capable of forming a pattern with high resolution and obtaining a cured film having excellent heat resistance and cracking resistance, and is also alkali developable; and a method capable of shortening the step required to remove a cured film of the composition after formation of an impurity region on a semiconductor substrate; and a method for manufacturing a semiconductor device using the same. Disclosed is a photosensitive resin composition including a polysiloxane (A), wherein the polysiloxane (A) is a polysiloxane represented by the general formula (1), and wherein (X) and (Y) are represented by the general formulas (4) to (6). 7.5?(X)?75??(4) 2.5?(Y)?40??(5) 1.

Abstract: Disclosed is a method for manufacturing a semiconductor device, including a step of yielding a pattern 2a of a polysiloxane-containing composition over a substrate 1, and a step of forming an ion impurity region 6 in the substrate, wherein, after the step of forming an ion impurity region, the method further includes a step of firing the pattern at a temperature of 300 to 1,500° C. This method makes it possible that after the formation of the ion impurity region in the semiconductor substrate, the pattern 2a of the polysiloxane-containing composition is easily removed without leaving any residual. Thus, the yield in the production of a semiconductor device can be improved and the tact time can be shortened.

Abstract: Disclosed is a photosensitive resin composition which exhibits positive or negative photosensitivity and is used as a mask in an ion implantation step, the photosensitive resin composition including, as a resin, (A) a polysiloxane. The photosensitive resin composition of the present invention has high heat resistance and is capable of controlling a pattern shape, and also has excellent ion implantation mask performance, thus enabling application to a low-cost high-temperature ion implantation process.

Abstract: The present invention provides a photosensitive resin composition comprising an unsaturated group-containing resin (D), a (meth)acrylic compound (E) having a specific structure, a silane compound (G) having a substituent selected from the group consisting of an amino group, an amide group, a ureido group, a ketimine group, and an isocyanate group, and a photo-polymerization initiator (F), the unsaturated group-containing resin (D) being obtained by adding an epoxy group-containing unsaturated compound (C) to some acid radicals of a copolymer obtained by copolymerizing a (meth)acrylic ester (A) with an unsaturated group- and acid-containing compound (B).

Abstract: The present invention provides a photosensitive resin composition comprising an unsaturated group-containing resin (D), a (meth)acrylic compound (E) having a specific structure, a silane compound (G) having a substituent selected from the group consisting of an amino group, an amide group, a ureido group, a ketimine group, and an isocyanate group, and a photo-polymerization initiator (F), the unsaturated group-containing resin (D) being obtained by adding an epoxy group-containing unsaturated compound (C) to some acid radicals of a copolymer obtained by copolymerizing a (meth)acrylic ester (A) with an unsaturated group- and acid-containing compound (B).

Abstract: Disclosed is a photosensitive resin composition which exhibits positive or negative photosensitivity and is used as a mask in an ion implantation step, the photosensitive resin composition including, as a resin, (A) a polysiloxane. The photosensitive resin composition of the present invention has high heat resistance and is capable of controlling a pattern shape, and also has excellent ion implantation mask performance, thus enabling application to a low-cost high-temperature ion implantation process.

Abstract: Disclosed is a positive photosensitive resin composition which contains a polisiloxane, a naphthoquinone diazide compound, and a solvent. The positive photosensitive resin composition is characterized in that the polysiloxane has: an organosilane-derived structure represented by the general formula (1): at a content ration of 20-80% inclusive of Si relative to the overall number of moles of Si atoms in the polysiloxane; and an organosilane-derived structure represented by general formula (2): The positive photosensitive resin composition exhibits high heat resistance, high transparency, and enables high sensitivity, high resolution patterning. The positive photosensitive resin composition can be used to form cured films such as planarization films used in TFT substrates, interlayer insulating films, core materials and cladding materials, and can be used in elements having cured films such as display elements, semiconductor elements, solid-state imaging elements, and optical waveguide elements.