Abstract: Disclosed in the present disclosure is a double-deck multi-span bridge construction method. According to the double-deck bridge construction method of the present disclosure, construction is carried out by using a method of disassembling a support jig frame in a graded and span-separated mode, an upper chord jig frame and a lower chord jig frame can be used in a recycle manner, and construction costs are reduced. In addition, a construction period of building the support jig frame is shortened, and other construction operations can be synchronously carried out on a span in which the jig frame is disassembled, for example, fire retardant coating construction can be carried out on a mounted bridge deck after the jig frame is disassembled, and the construction period of a double-deck multi-span bridge is effectively shortened.

Abstract: The present disclosure relates to a spike event decision-making device, method, chip, and electronic device to eliminate inherent delays of an output spike event of the neuromorphic chip when reading decisions. The spike event decision-making device includes a first counting module configured to count a number of input spike events of the spiking neural network, a second counting module configured to count some or all of the output spike events of the spiking neural network; and a decision-making module configured to generate a decision-making result according to numbers of spike events fired by neurons in an output layer of the spiking neural network when the number counted by the first counting module reaches a first predetermined value, or when the total count counted by the second counting module reaches a second predetermined value.

Abstract: A flexible laminated solar cell comprising a CIGS photovoltaic layer having two opposing generally flat first and second parallel surfaces; a first encapsulation layer placed on each of said first and second parallel surfaces; an encapsulation vapor barrier film placed on each of said first encaption layers; a second encapsulation layer placed on said encapsulation vapor barrier films; and a third encapsulation layer placed on at least one of said second encapsulation layers. The laminated structure with encapsulation layers protects the CIGS photovoltaic layer against moisture and atmospheric pollutants. The CIGS laminated structure is used in a versatile portable solar charger provided with user interfaces to monitor and control the charger and devices or features contained therein.

Abstract: A flexible laminated solar cell comprising a CIGS photovoltaic layer having two opposing generally flat first and second parallel surfaces; a first encapsulation layer placed on each of said first and second parallel surfaces; an encapsulation vapor barrier film placed on each of said first encaption layers; a second encapsulation layer placed on said encapsulation vapor barrier films; and a third encapsulation layer placed on at least one of said second encapsulation layers. The laminated structure with encapsulation layers protects the CIGS photovoltaic layer against moisture and atmospheric pollutants. The CIGS laminated structure is used in a versatile portable solar charger provided with user interfaces to monitor and control the charger and devices or features contained therein.

Abstract: A method for degrading artificial sweeteners from sewage, the method including: 1) introducing sewage to a secondary sedimentation tank and precipitating sediments; 2) collecting a supernatant from the secondary sedimentation tank, adding a NaOH solution or a perchloric acid solution to regulate the pH; adding an H2O2 solution to the supernatant to adjust a ratio of a molar concentration of H2O2 to a molar concentration of the sweetener in the resulting mixed solution to be between 1:1 and 30:1; transferring the resulting mixed solution to a photoreactor, irradiating the mixed solution by ultraviolet light, and stirring the mixed solution for between 5 and 30 min; and adding a 1.5% w/w aqueous NaNO2 solution to the mixed solution; and 3) collecting and analyzing an effluent obtained from 2), contacting the effluent with ClO2 for reaction in a disinfecting tank, and discharging the product.

Abstract: A method for degrading artificial sweeteners from sewage, the method including: 1) introducing sewage to a secondary sedimentation tank and precipitating sediments; 2) collecting a supernatant from the secondary sedimentation tank, adding a NaOH solution or a perchloric acid solution to regulate the pH; adding an H2O2 solution to the supernatant to adjust a ratio of a molar concentration of H2O2 to a molar concentration of the sweetener in the resulting mixed solution to be between 1:1 and 30:1; transferring the resulting mixed solution to a photoreactor, irradiating the mixed solution by ultraviolet light, and stirring the mixed solution for between 5 and 30 min; and adding a 1.5% w/w aqueous NaNO2 solution to the mixed solution; and 3) collecting and analyzing an effluent obtained from 2), contacting the effluent with ClO2 for reaction in a disinfecting tank, and discharging the product.

Abstract: This invention discloses a solution based synthesis of cesium tin tri-iodide (CsSnI3). More specifically, the CsSnI3 is fabricated in an organic Perovskite precursor solvent. CsSnI3 are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

Abstract: This invention discloses a solution based synthesis of cesium tin tri-iodide (CsSnI3). More specifically, the CsSnI3 is fabricated in an organic Perovskite precursor solvent. CsSnI3 are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

Abstract: This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI3) film. More specifically, the invention is directed to a solution-based drop-coating synthesis of cesium tin tri-iodide (CsSnI3) films. CsSnI3 films are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

Abstract: A method of preparing Cu(In,Ga)SSe2 Cu(In,Ga) (S,Se)2 (CIGSS) absorber layers uses coated semiconductor nanoparticle and nanowire networks. The nanoparticles and nanowires containing one or more elements from group IB and/or IIIA and/or VIA are prepared from metal salts such as metal chloride and acetate at room temperature without inert gas protection. A uniform and non-aggregation CIGS precursor layer is fabricated with the formation of nanoparticle and nanowire networks utilizing ultrasonic spaying technique. High quality CIGSS film is obtained by cleaning the residue salts and carbon agents at an increased temperature and selenizing the pretreated precursor layer.

Abstract: We disclose a method of preparing CIGS absorber layers using coated semiconductor nanoparticle and nanowire networks. The nanoparticles and nanowires containing one or more elements from group IB and/or IIIA and/or VIA are prepared from metal salts such as metal chloride and acetate at room temperature without inert gas protection. A uniform and non-aggregation CIGS precursor layer is fabricated with the formation of nanoparticle and nanowire networks utilizing ultrasonic spaying technique. High quality CIGS film is obtained by cleaning the residue salts and carbon agents at an increased temperature and selenizing the pretreated precursor layer.

Abstract: We disclose a method of preparing CIGS absorber layers using coated semiconductor nanoparticle and nanowire networks. The nanoparticles and nanowires containing one or more elements from group IB and/or IIIA and/or VIA are prepared from metal salts such as metal chloride and acetate at room temperature without inert gas protection. A uniform and non-aggregation CIGS precursor layer is fabricated with the formation of nanoparticle and nanowire networks utilizing ultrasonic spraying technique. High quality CIGS film is obtained by cleaning the residue salts and carbon agents at an increased temperature and selenizing the pretreated precursor layer.

Abstract: This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI3) film. More specifically, the invention is directed to a solution-based spray-coating synthesis of cesium tin tri-iodide (CsSnI3) thin films. This invention is also directed to effective and inexpensive methods to synthesize the thin CsSnI3 films on large-area substrates such as glass, ceramics, glass, ceramic, silicon, and metal foils. CsSnI3 films are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

Abstract: This invention discloses a solid-based synthesis of cesium tin tri-iodide (CsSnI3). More specifically, the CsSnI3 is fabricated in a 3 zone high temperature resisting tube by the solid-phase sintering method. CsSnI3 are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

Abstract: A method of forming an compound semiconductor thin film of chalcopyrite structure includes the steps of heating up elemental VI powder in a first chamber to produce VI vapor flux. The VI vapor flow is introduced into a second chamber and an Argon plasma is utilized to crack large molecular VI fractions to generate small VI species. The small molecule VI species are homogeneously deposited on the metallic I-III precursor layers and the precursor film is sealed into a graphite box and transferred to an annealing chamber to create an absorber layer with a large grain size and good crystalline structure.

Abstract: This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI3) film. More specifically, the invention is directed to a solution-based spray-coating synthesis of cesium tin tri-iodide (CsSnI3) thin films. This invention is also directed to effective and inexpensive methods to synthesize the thin CsSnI3 films on large-area substrates such as glass, ceramics, glass, ceramic, silicon, and metal foils. CsSnI3 films are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

Abstract: This invention discloses a solution-based synthesis of cesium tin tri-iodide (CsSnI3) film. More specifically, the invention is directed to a solution-based drop-coating synthesis of cesium tin tri-iodide (CsSnI3) films. CsSnI3 films are ideally suited for a wide range of applications such as light emitting and photovoltaic devices.

Abstract: Ternary and quaternary Chalcopyrite CuInxGa1-xSySe2-y (CIGS, where 0?x and y?1) nanoparticles were synthesized from molecular single source precursors (SSPs) by a one-pot reaction in a high boiling solvent using salt(s) (i.e. NaCl as by-product) as heat transfer agent via conventional convective heating method. The nanoparticles sizes were 1.8 nm to 5.2 nm as reaction temperatures were varied from 150° C. to 190° C. with very high-yield. Tunable nanoparticle size is achieved through manipulation of reaction temperature, reaction time, and precursor concentrations. In addition, the method developed in this study was scalable to achieve ultra-large quantities production of tetragonal and quaternary Chalcopyrite CIGS nanoparticles.